VESD05A1B-HD1 www.vishay.com Vishay Semiconductors ESD-Protection Diode in LLP1006-2L FEATURES • Ultra compact LLP1006-2L package • Low package height < 0.4 mm 1 2 • 1-line ESD-protection • Low leakage current < 0.1 μA 20856 • Low load capacitance CD = 12 pF (VR = 2.5 V; f = 1 MHz) 20855 • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge MARKING (example only) • High surge current acc. IEC61000-4-5 IPP > 3 A • Soldering can be checked by standard vision inspection. No X-ray necessary XY • Pin plating NiPdAu (e4) no whisker growth 21121 • e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) Bar = cathode marking X = date code Y = type code (see table below) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ORDERING INFORMATION ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE on 7" REEL) MINIMUM ORDER QUANTITY VESD05A1B-HD1-GS08 8000 8000 DEVICE NAME VESD05A1B-HD1 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VESD05A1B-HD1 LLP1006-2L D 0.72 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS VESD05A1B-HD1 PARAMETER TEST CONDITIONS SYMBOL Peak pulse current Acc. IEC 61000-4-5; tP = 8/20 μs; single shot IPPM 3 A Peak pulse power Acc. IEC 61000-4-5; tP = 8/20 μs; single shot PPP 33 W ESD immunity Operating temperature Storage temperature Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VALUE UNIT ± 30 kV ± 30 kV TJ -40 to +125 °C Tstg -55 to +150 °C VESD PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and International patents. Rev. 1.7, 04-Feb-16 Document Number: 81796 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD05A1B-HD1 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VESD05A1B-HD1 (Tamb = 25 °C, unless otherwise specified) PARAMETER Protection paths Reverse stand off voltage TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 5 V Reverse voltage at IR = 0.1 μA VR 5 - - V Reverse current at VR = 5 V IR - 0.01 0.1 μA Reverse breakdown voltage at IR = 1 mA VBR 6 6.8 7.5 V - 8 9.5 V at IPP = 1 A Reverse clamping voltage at IPP = IPPM = 3 A VC at IPP = 0.2 A at IPP = 1 A Forward clamping voltage VF at IPP = IPPM = 3 A at VR = 0 V; f = 1 MHz Capacitance at VR = 2.5 V; f = 1 MHz CD - 8.9 11 V - 0.95 1.2 V - 1.3 - V - 1.9 - V - 19 23 pF - 12 - pF BiAs-MODE (bidirectional asymmetrical protection mode) With the VESD05A1B-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD05A1B-HD1 clamping behaviour is bidirectional and asymmetrical (BiAs). 2 L1 1 BiAs Ground Rev. 1.7, 04-Feb-16 20925 Document Number: 81796 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD05A1B-HD1 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 120 % Rise time = 0.7 ns to 1 ns Discharge Current IESD 100 % 10 80 % 1 IF (mA) 60 % 53 % 0.1 40 % 27 % 0.01 20 % 0.001 0.5 0% -10 0 10 20 30 40 50 60 70 80 90 100 0.6 0.7 Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) 0.8 0.9 1 VF (V) 21157 Time (ns) 20557 Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF 8 8 µs to 100 % 100 % 7 6 80 % VR (V) 5 IPPM 60 % 20 µs to 50 % 4 40 % 3 2 20 % 1 0% 0 0 10 20 30 40 Time (µs) 20548 0.01 0.1 Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 1 100 1000 10 000 10 IR (µA) 21158 Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR 10 25 f = 1 MHz 8 20 Reverse VF/VC (V) CD (pF) 6 15 10 4 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 2 0 Forward 5 -2 0 -4 0 21156 1 2 3 4 5 VR (V) Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR Rev. 1.7, 04-Feb-16 0 21159 1 2 3 4 5 IPP (A) Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current IPP Document Number: 81796 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD05A1B-HD1 www.vishay.com Vishay Semiconductors 60 50 Reverse 40 Acc. IEC 61000-4-2 + 8 kV contact discharge VC-ESD (V) 30 20 10 0 - 10 - 20 - 30 - 40 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) 21160 Fig. 7 - Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 50 Forward 40 30 Acc. IEC 61000-4-2 - 8 kV contact discharge VC-ESD (V) 20 10 0 - 10 - 20 - 30 - 40 - 50 - 60 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) 21161 Fig. 8 - Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 150 Reverse VC-ESD (V) 100 50 Acc. IEC 61000-4-2 contact discharge 0 - 50 - 100 Forward - 150 0 21162 5 10 15 20 VESD (kV) Fig. 9 - Typical Clamping Voltage at ± ESD Contact Discharge (acc. IEC 61000-4-2) Rev. 1.7, 04-Feb-16 Document Number: 81796 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD05A1B-HD1 www.vishay.com Vishay Semiconductors 0.25 [0.010] 0.15 [0.006] PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2L 0.65 [0.026] 0.55 [0.022] Orientation identification 0.05 [0.002] 0 [0.000] 0.4 [0.016] 0.33 [0.013] 0.45 [0.018] 0.35 [0.014] 0.125 [0.005] ref. 0.55 [0.022] 0.45[0.018] 0.3 [0.012] 0.2 [0.008] 1.05 [0.041] 0.95 [0.037] 1 [0.039] solder resist mask solder pad 0.05 [0.002] Document no.: S8-V-3906.04-005 (4) Rev. 6 - Date: 15.July 2015 20812 0.2 [0.008] 0.5 [0.020] 0.6 [0.024] Foot print recommendation: 0.25 [0.010] 0.5 [0.020] soldermask opening ± 0.03 measured middle of the package Unreeling direction Bidirectional LLP1006-xx Pin 1 mark Top view Rev. 1.7, 04-Feb-16 Pad layout - view from top seen at bottom side Document Number: 81796 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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