SS10PH45 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES eSMP ® Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum 1 • Low leakage current • Meets MSL level 1, per LF maximum peak of 260 °C 2 • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 TO-277A (SMPC) K Cathode J-STD-020, Anode 1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 2 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 45 V IFSM 200 A EAS 20 mJ VF at IF = 10 A 0.56 V IR 5.5 μA TJ max. 175 °C Package TO-277A (SMPC) Diode variations Single TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS10PH45 UNIT 10H45 Maximum repetitive peak reverse voltage VRRM 45 V Maximum average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 200 A EAS 20 mJ TJ, TSTG -55 to +175 °C Non-repetitive avalanche energy at IAS = 2 A , TJ = 25 °C Operating junction and storage temperature range Revision: 01-Dec-14 Document Number: 89057 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS10PH45 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A TYP. TA = 25 °C IF = 10 A Instantaneous forward voltage SYMBOL VF (1) IF = 5 A TA = 125 °C IF = 10 A TA = 25 °C Reverse current Rated VR Typical junction capacitance 4.0 V, 1 MHz TA = 125 °C 0.54 - 0.64 0.72 0.45 - 0.56 0.64 UNIT V 5.5 80 μA 3.9 10 mA 400 - pF IR (2) CJ MAX. Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Typical thermal resistance per diode SS10PH45 RJA (1) 60 RJL 3 UNIT °C/W Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY SS10PH45-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel SS10PH45-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel SS10PH45HM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel (1) 0.10 87A 6500 13" diameter plastic tape and reel SS10PH45HM3_A/H (1) 0.10 H 1500 7" diameter plastic tape and reel 0.10 I 6500 13" diameter plastic tape and reel SS10PH45HM3/87A SS10PH45HM3_A/I (1) DELIVERY MODE Note AEC-Q101 qualified (1) Revision: 01-Dec-14 Document Number: 89057 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS10PH45 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) 100 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) 12 Resistive or Inductive Load 10 8 6 4 TL measured at the Cathode Band Terminal 2 0 TA = 175 °C 10 TA = 150 °C 1 TA = 125 °C 0.1 0.01 TA = 25 °C 0.001 0.0001 0 50 25 100 75 125 150 10 175 20 30 40 50 60 70 100 10 000 8.0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 Junction Capacitance (pF) D = 0.5 Average Power Loss (W) 90 Fig. 4 - Typical Reverse Leakage Characteristics Fig. 1 - Maximum Forward Current Derating Curve 6.0 D = 0.3 D = 0.2 4.0 D = 1.0 D = 0.1 T 2.0 D = tp/T 1000 100 tp 10 0 0 2 4 6 8 10 0.1 12 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 80 Percent of Rated Peak Reverse Voltage (%) Lead Temperature (°C) TA = 175 °C TA = 150 °C 10 TA = 125 °C 1 0.1 0.1 TA = 25 °C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Junction to Ambient 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 01-Dec-14 Document Number: 89057 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS10PH45 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 01-Dec-14 Document Number: 89057 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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