SS8P2L, SS8P3L www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP ® Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Low forward voltage drop • Low power loss, high efficiency • Low thermal resistance 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 TO-277A (SMPC) K Cathode J-STD-020, Anode 1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 2 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 20 V, 30 V IFSM 150 A EAS 20 mJ VF at IF = 8.0 A 0.472 V Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) TJ max. 150 °C Package TO-277A (SMPC) Diode variations Single MECHANICAL DATA Case: TO-277A (SMPC) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS8P2L SS8P3L S82 S83 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 8.0 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 150 Non-repetitive avalanche energy at IAS = 2 A, TJ = 25 °C EAS 20 mJ TJ, TSTG -55 to +150 °C Operating junction and storage temperature range 20 30 V A Revision: 20-Jan-15 Document Number: 89001 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS8P2L, SS8P3L www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS IF = 4.0 A TA = 25 °C IF = 8.0 A (1) VF Maximum instantaneous forward voltage IF = 4.0 A TA = 125 °C IF = 8.0 A IR (2) Maximum reverse current Typical junction capacitance TA = 25 °C VR = 30 V CJ TA = 125 °C 4.0 V, 1 MHz TYP. MAX. 0.447 - UNIT 0.533 0.57 0.357 - 0.472 0.49 55 200 μA 24 35 mA 330 - pF V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance SS8P2L SS8P3L RJA (1) 60 RJL 3.5 UNIT °C/W Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS8P3L-M3/86A 0.1 86A 1500 7" diameter plastic tape and reel SS8P3L-M3/87A 0.1 87A 6500 13" diameter plastic tape and reel SS8P3LHM3/86A (1) 0.1 86A 1500 7" diameter plastic tape and reel SS8P3LHM3/87A (1) 0.1 87A 6500 13" diameter plastic tape and reel SS8P3LHM3_A/H (1) 0.1 H 1500 7" diameter plastic tape and reel SS8P3LHM3_A/I (1) 0.1 I 6500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 20-Jan-15 Document Number: 89001 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS8P2L, SS8P3L www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Instantaneous Reverse Current (mA) Average Forward Current (A) 10 Resistive or Inductive Load 8 6 4 2 TL measured at the Cathode Band Terminal 0 0 25 50 75 100 125 150 1000 100 TA = 150 °C 10 TA = 125 °C 1 0.1 TA = 25 °C 0.01 0.001 10 175 D = 0.5 D = 0.8 D = 1.0 3 2 T 1 D = tp/T 3 4 5 6 7 8 90 1 10 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance TA = 150 °C 10 TA = 125 °C 1 TA = 25 °C 0.1 0.01 0.2 0.4 100 100 Average Forward Current (A) 100 0 80 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 0.1 9 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 2 70 tp 0 1 60 1000 D = 0.3 D = 0.1 0 50 Junction Capacitance (pF) Average Power Loss (W) 4 40 Fig. 4 - Typical Reverse Leakage Characteristics Fig. 1 - Maximum Forward Current Derating Curve D = 0.2 30 Percent of Rated Peak Reverse Voltage (%) Lead Temperature (°C) 5 20 0.6 0.8 1.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 100 Junction to Ambient 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 20-Jan-15 Document Number: 89001 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS8P2L, SS8P3L www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 20-Jan-15 Document Number: 89001 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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