22

PV-Module
Table of Contents
Concentrators, Bypass Diode.......................................................................................................................................... 3
Crystalline, Junction Box................................................................................................................................................. 4
Crystalline, Module Integration........................................................................................................................................ 5
Thin Film, Junction Box.................................................................................................................................................... 6
Thin Film, Module Integration.......................................................................................................................................... 7
page 1
PV-Module
Application Overview
Photovoltaic (PV) modules are composed of many individual solar cells that are arranged in such a way as to achieve
desired voltage and current output. The system needs to be protected against reverse current flow in order to avoid
dissipating the harvested energy as heat. To simplify the wiring of the cells, bypass diodes must be placed in proximity to
the panel in the “junction box” that is typically made of plastic and mounted on the rear side of the panel, and thus
exposed to rather high temperatures with limited heat dissipation capabilities. Schottky diodes are well suited and widely
adopted for this application because of low conduction losses. The preferred package is axial, but new designs are going
to SMD parts. Crystalline PV Modules use the junction box to connect the PV solar cells as strings to the inverter system.
The bypass diodes are integrated into the junction box parallel to the strings in order to optimize the generated power of
the PV module, even when part of the module is not working due to shadow effects, and to protect the non-working cells
against overheating and hot spots. Newer trends involve separating the junction box and the bypass diodes and
integrating the diodes into the PV module. Thin Film PV Modules require so-called ""blocking diodes"" between the PV
module connectors that should withstand the maximum ""system voltage"" of the PV equipment, which can reach 1000 V.
For improved efficiency, some designs use Schottky bypass diodes not only for the strings as in the crystalline concept,
but also use several bypass diodes integrated into the module for a group of PV solar cells. Concentrator PV Modules are
built with high concentrating lenses that project solar light onto a small solar cell that is mounted on a ceramic substrate.
The application requires high-current Schottky bypass diodes and sometimes require ""bare dies"" for direct mounting on
the ceramic substrate.
page 2
PV-Module : Concentrators, Bypass Diode
Bypass Diode
Product Name
Status
Description
Features
Package
MURS360
NEW
SMD Ultrafast Rectifier
Glass pass chip juntcion
DO-214AB
SMC
SS15P3S
NEW
Photovoltaic Solar Cell Protection
low profile = 1.1mm
TO-277A
SMPC
SSA33L
NEW
SMD-Schottky Rectifier
Low profile
DO-214AC
SMA
VBT6045CBP
NEW
Solar Cell Protection - TMBS
Ultra Low VF = 0.33 V at IF = 10 A
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 2*30 A;
SMD
TO-263AB
D2PAK
Q-Level
page 3
PV-Module : Crystalline, Junction Box
Bypass Diode
Product Name
Status
Description
Features
Package
MBRB15H45CT
NEW
Cell Protection - Schottky
High Barrier Technology for Improved
High Temperature Performance
Tj = 175 C; VR = 45 V;
Tj=175 CIF = 2 * 7.5 A;
SMD
TO-263AB
D2Pack
MBRB30H45CT
NEW
Cell Protection - Schottky
High Barrier Technology for Improved
High Temperature Performance
Tj = 175 C; VR = 45 V;
Tj=175 CIF = 2 * 15 A;
VF = 0.56 V;
SMD
TO-263AB
D2Pack
SS10PH45
NEW
Cell Protection - Schottky
Low VF = 0.45 V at IF = 5.0 A
Vf at If=10A --> 0.56V
Tj = 175 C; VR = 45 V;
Tj=175 C; IF = 10 A;
VF = 0.56 V;
SMD
TO-277A
SMPC
SS15P3S
NEW
Cell Protection - Schottky
Low VF = 0.32 V at IF = 7.5 A
Vf at If=15A --> 0.42V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 15 A;
VF = 0.42 V;
SMD
TO-277A
SMPC
V10P45S
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.34 V at IF = 5.0 A
Vf at If=10A --> 0.41V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 10 A;
VF = 0.41 V;
SMD
TO-277A
SMPC
V15P45S
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.31 V at IF = 5.0 A
Vf at If=15A --> 0.42V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 15 A;
VF = 0.42 V;
SMD
TO-277A
SMPC
VBT2045BP
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.33 V at IF = 5.0 A
Vf at If=20A --> 0.51V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 20 A;
VF = 0.51 V;
SMD
TO-263AB
D2Pack
VBT2045CBP
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.33 V at IF = 5.0 A
Vf at If=10A --> 0.41V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 2*10 A;
VF = 0.41 V;
SMD
TO-263AB
D2Pack
VBT3045CBP
NEW
Cell Protection - Trench-Schottky
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 2*15 A;
VF = 0.39 V;
SMD
TO-263AB
D2Pack
VBT4045BP
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.28 V at IF = 5.0 A
Vf at If=40A --> 0.51V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 40 A;
VF = 0.51 V;
SMD
TO-263AB
D2Pack
VBT6045CBP
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.33 V at IF = 10 A
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 2*30 A;
SMD
TO-263AB
D2Pack
VSB1545
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.33 V at IF = 5.0 A
Vf at If=15A --> 0.44V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 15 A;
VF = 0.33 V;
TH / Axial
P600
leaded
VSB2045
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.30 V at IF = 5.0 A
Vf at If=20A --> 0.42V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 20 A;
VF = 0.30 V;
Leaded Axial
P600
VT2045BP
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.33 V at IF = 5.0 A
Vf at If=20A --> 0.51V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 20 A;
VF = 0.51 V;
Through Hole
TO-220AB
PowerPack
VT2045CBP
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.33 V at IF = 5.0 A
Vf at If=10A --> 0.41V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 2*10 A;
VF = 0.41 V;
Through Hole
TO-220AC
PowerPack
VT3045BP
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.30 V at IF = 5.0 A
Vf at If=30A --> 0.45V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 30 A;
VF = 0.51 V;
Through Hole
TO-220AC
PowerPack
VT3045CBP
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.30 V at IF = 5.0 A
Vf at If=15A --> 0.39V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 2*15 A;
VF = 0.30 V;
Through Hole
TO-220AB
PowerPack
VT4045BP
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.28 V at IF = 5.0 A
Vf at If=40A --> 0.51V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 40 A;
VF = 0.51 V;
Through Hole
TO-220AC
PowerPack
VT6045CBP
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.33 V at IF = 10 A
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 2*30 A;
Through Hole
TO-220AB
PowerPack
Q-Level
page 4
PV-Module : Crystalline, Module Integration
Bypass Diode
Product Name
Status
SS15P3S
Description
Features
Package
Cell Protection - Schottky
Low VF = 0.32 V at IF = 7.5
Vf at If=15A --> 0.42V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 15 A;
VF = 0.42 V;
SMD
TO-277A
SMPC
SS15P3S
NEW
Cell Protection - Schottky
Low VF = 0.32 V at IF = 7.5 A
Vf at If=15A --> 0.42V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 15 A;
VF = 0.42 V;
SMD
TO-277A
SMPC
V15P45S
NEW
Cell Protection - Trench-Schottky
Ultra Low VF = 0.31 V at IF = 5.0 A
Vf at If=15A --> 0.42V
Tj = 150 C; VR = 45 V;
Tj=200 C; IF = 15 A;
VF = 0.42 V;
SMD
TO-277A
SMPC
Q-Level
page 5
PV-Module : Thin Film, Junction Box
Blocking Diode
Product Name
Status
Description
Features
Package
1N5408
Plastic Rectifier
Low laekage current
Tj=150 C; IF = 3.0 A;
DO-201AD
GP30M
Glass Passivated Junction
Plastic Rectifier
Cavity-free
glass passivated junctio
DO-201AD
P600M
General Purpose Plastic Rectifier
Low leakage current
High forward current capability
Tjmax=150°C
Vrrm=1000V
TH / Axial
P600
Q-Level
page 6
PV-Module : Thin Film, Module Integration
Bypass Diode
Product Name
Status
SS5P3
SS8P3L
NEW
Description
Features
Package
Cell Protection - Schottky Rectifier
Low forward voltage drop
Vf@5A=0.403V
SMD
eSMP
TO-277A
SMD-Schottky Rectifier
Low profile =1.1mm
SMD
TO-277A
SMPC
Q-Level
AEC-Q
page 7
page 8