Si1032R/X Vishay Siliconix N-Channel 1.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • Low-Side Switching • Low On-Resistance: 5 • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 35 ns • TrenchFET® Power MOSFETs: 1.5 V Rated • 2000 V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • • • • • SC-75A or SC-89 G 1 3 D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS S 2 • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers Marking Code: G Top View Ordering Information: Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Si1032R Parameter Symbol 5s Si1032X Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±6 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Currenta 200 110 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa for SC-75 ID TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS PD 5s Steady State Unit V 140 210 100 150 500 200 140 600 250 200 300 240 280 250 340 300 145 130 170 150 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface mounted on FR4 board. Document Number: 71172 S10-2544-Rev. F, 08-Nov-10 www.vishay.com 1 Si1032R/X Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS = VGS, ID = 250 µA 0.40 Typ. Max. Unit V Static VGS(th) Gate Threshold Voltage IGSS Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea 0.7 1.2 VDS = 0 V, VGS = ± 2.8 V ± 0.5 ± 1.0 VDS = 0 V, VGS = ± 4.5 V ± 1.0 ± 3.0 VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS = 5 V, VGS = 4.5 V RDS(on) 10 250 mA VGS = 4.5 V, ID = 200 mA 5 VGS = 2.5 V, ID = 175 mA 7 VGS = 1.8 V, ID = 150 mA 9 VGS = 1.5 V, ID = 40 mA Forward Transconductancea Diode Forward Voltagea µA 1 10 gfs VDS = 10 V, ID = 200 mA VSD IS = 150 mA, VGS = 0 V 0.5 S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 750 tr Rise Time td(off) Turn-Off Delay Time VDS = 10 V, VGS = 4.5 V, ID = 250 mA pC 75 225 50 VDD = 10 V, RL = 47 ID 200 mA, VGEN = 4.5 V, Rg = 10 25 tf Fall Time ns 50 25 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.5 600 TJ = - 55 °C VGS = 5 V thru 1.8 V 500 ID - Drain Current (mA) ID - Drain Current (A) 0.4 0.3 0.2 0.1 25 °C 400 125 °C 300 200 100 1V 0.0 0 www.vishay.com 2 1 2 3 4 5 6 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 Document Number: 71172 S10-2544-Rev. F, 08-Nov-10 Si1032R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 100 40 80 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 0 V f = 1 MHz 30 20 Ciss 60 40 VGS = 1.8 V 10 Coss 20 VGS = 2.5 V Crss VGS = 4.5 V 0 0 50 100 150 200 0 250 0 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (mA) Capacitance On-Resistance vs. Drain Current 5 1.60 VDS = 10 V ID = 150 mA 4 1.40 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 3 2 1 VGS = 4.5 V ID = 200 mA 1.20 VGS = 1.8 V ID = 175 mA 1.00 0.80 0 0.0 0.2 0.4 0.6 0.60 - 50 0.8 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 50 1000 R DS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C 100 TJ = 25 °C TJ = 50 °C 10 1 0.0 40 ID = 200 mA 30 20 ID = 175 mA 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - S ource-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Surge-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71172 S10-2544-Rev. F, 08-Nov-10 6 www.vishay.com 3 Si1032R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.3 3.0 0.2 2.5 0.1 2.0 IGSS - (µA) V GS(th) Variance (V) ID = 0.25 mA 0.0 1.5 - 0.1 1.0 - 0.2 0.5 VGS = 2.8 V - 0.3 - 50 - 25 0 25 50 75 100 0.0 - 50 125 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature IGSS vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) TJ - Temperature (°C) 100 125 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 500 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71172. www.vishay.com 4 Document Number: 71172 S10-2544-Rev. F, 08-Nov-10 Package Information www.vishay.com Vishay Siliconix SC-75A: 3 Leads L2 A 2 D 1 D bbb D e2 2X D 3 L1 L B1(b1) 3 e1 3 E/2 1 2 E E1 1 1 bbb D 1 2 C bbb C D 4 ddd M C B 3 2X e3 B1 b1 2XB1 A– B B B 2X D c1 C With Tin Planting bbb D Section B-B 5 A A2 Base Metal C 4X Seating Plane A1 D DWG: 5868 Notes Dimensions in millimeters will govern. 1.Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2.Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 3.Datums A, B and D to be determined 0.10 mm from the lead tip. 4.Terminal positions are shown for reference only. 5.These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. DIMENSIONS TOLERANCES aaa 0.10 bbb 0.10 ccc 0.10 ddd C15-1445-Rev. F, 23-Nov-15 0.10 DIM. MILLIMETERS MIN. NOM. MAX. A - - 0.80 A1 0.00 - 0.10 NOTE A2 0.65 0.70 0.80 B1 0.19 - 0.24 b1 0.17 - 0.21 c 0.13 - 0.15 c1 0.10 - 0.12 5 D 1.48 1.575 1.68 1, 2 E 1.50 1.60 1.70 E1 0.66 0.76 0.86 e1 0.50 BSC e2 1.00 BSC e3 L 5 5 1, 2 0.50 BSC 0.15 0.205 L1 0.40 ref. L2 0.15 BSC 0.30 q 0° - 8° q1 4° - 10° Document Number: 71348 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 0.031 (0.798) 0.020 (0.503) (1.803) 0.071 (0.356) 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72603 Revision: 21-Jan-08 www.vishay.com 19 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000