VISHAY SI1012X

Si1012R/X
Vishay Siliconix
N-Channel 1.8 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) ()
ID (mA)
0.70 at VGS = 4.5 V
600
0.85 at VGS = 2.5 V
500
1.25 at VGS = 1.8 V
350
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 1.8 V Rated
• Gate-Source ESD Protected: 2000 V
• High-Side Switching
• Low On-Resistance: 0.7 
• Low Threshold: 0.8 V (typ.)
• Fast Switching Speed: 10 ns
• Compliant to RoHS Directive 2002/95/EC
SC-75A or SC-89
G
1
APPLICATIONS
3
S
D
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
2
Top View
BENEFITS
ORDERING INFORMATION
Marking
Code
Part Number
Package
Si1012R-T1-GE3 (Lead (Pb)-free
and Halogen-free)
SC-75A
(SOT-416)
C
Si1012X-T1-GE3 (Lead (Pb)-free
and Halogen-free)
SC-89
(SOT-490)
A
•
•
•
•
•
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±6
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C
TA = 85 °C
Pulsed Drain Currenta
ID
600
Continuous Source Current (Diode Conduction)b
Maximum Power Dissipationb for SC-75
b
Maximum Power Dissipation for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
IS
TA = 25 °C
TA = 85 °C
TA = 25 °C
PD
TA = 85 °C
V
500
400
IDM
Unit
350
1000
275
250
175
150
90
80
275
250
160
140
mA
mW
TJ, Tstg
- 55 to 150
°C
ESD
2000
V
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board.
Document Number: 71166
S10-2432-Rev. D, 25-Oct-10
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1
Si1012R/X
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
0.45
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
0.9
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
± 0.5
± 1.0
µA
IDSS
VDS = 20 V, VGS = 0 V
0.3
100
nA
Zero Gate Voltage Drain Current
Gate Threshold Voltage
a
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductancea
Diode Forward Voltagea
a
VDS = 20 V, VGS = 0 V, TJ = 85 °C
5
ID(on)
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 600 mA
0.41
0.70
RDS(on)
VGS = 2.5 V, ID = 500 mA
0.53
0.85
VGS = 1.8 V, ID = 350 mA
0.70
1.25
gfs
VDS = 10 V, ID = 400 mA
1.0
VSD
IS = 150 mA, VGS = 0 V
0.8
700
µA
mA

S
1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
750
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
75
pC
225
5
VDD = 10 V, RL = 47 
ID  200 mA, VGEN = 4.5 V, Rg = 10 
tf
5
25
ns
11
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71166
S10-2432-Rev. D, 25-Oct-10
Si1012R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.0
1200
TC = - 55 °C
VGS = 5 V thru 1.8 V
1000
ID - Drain Current (mA)
ID - Drain Current (A)
0.8
0.6
0.4
0.2
25 °C
800
125 °C
600
400
200
1V
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
1.0
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4.0
100
3.2
80
2.4
1.6
2.5
Ciss
60
40
VGS = 1.8 V
0.8
Coss
20
VGS = 2.5 V
VGS = 4.5 V
Crss
0
0.0
0
200
400
600
800
0
1000
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (mA)
Capacitance
On-Resistance vs. Drain Current
5
1.60
VDS = 10 V
ID = 250 mA
4
1.40
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
1.5
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.0
0.0
3
2
1
0
0.0
VGS = 4.5 V
ID = 600 mA
1.20
VGS = 1.8 V
ID = 350 mA
1.00
0.80
0.2
0.4
0.6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 71166
S10-2432-Rev. D, 25-Oct-10
0.8
0.60
- 50
- 25
0
25
50
75
100
125
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1012R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
5
1000
100
TJ = 25 °C
TJ = - 55 °C
10
1
0.0
4
RDS(on) - On-Resistance (Ω)
I S - Source Current (mA)
TJ = 125 °C
ID = 350 mA
3
ID = 200 mA
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
1
3
4
5
6
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.3
3.0
0.2
2.5
ID = 0.25 mA
0.1
2.0
IGSS - (µA)
V GS(th) Variance (V)
2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
0
1.5
- 0.1
1.0
- 0.2
0.5
VGS = 4.5 V
- 0.3
- 50
- 25
0
25
50
75
100
0.0
- 50
125
- 25
TJ - Temperature (°C)
25
50
75
100
125
TJ - Temperature (°C)
IGSS vs. Temperature
Threshold Voltage Variance vs. Temperature
BVGSS - Gate-to-Source Breakdown Voltage (V)
0
7
6
5
4
3
2
1
0
- 50
- 25
0
25
50
75
100
125
TJ - Temperature (°C)
BVGSS vs. Temperature
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Document Number: 71166
S10-2432-Rev. D, 25-Oct-10
Si1012R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 833 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71166.
Document Number: 71166
S10-2432-Rev. D, 25-Oct-10
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Package Information
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Vishay Siliconix
SC-75A: 3-LEADS
L2
A
2
D
1
D bbb
D
e2
2X
D
3
L1
L
B1(b1)
3
e1
3
E/2
1
2
E
E1
1
1
bbb
D
1
2
C
bbb C
D
4
ddd M
C
B
3
2X
e3
B1
b1
2XB1
A– B
B
B
2X
D
C
With Tin Planting
c1
bbb
D
Section B-B 5
A
A2
Base Metal
C
4X
Seating Plane
A1
D
Notes
Dimensions in millimeters will govern.
1. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2. Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interelead flash, but including any mismatch between the top
and bottom of the plastic body.
3. Datums A, B and D to be determined 0.10 mm from the lead tip.
4. Terminal positions are shown for reference only.
5. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
MILLIMETERS
DIM.
MIN.
NOM.
MAX.
A
-
-
0.80
0.10
A1
0.00
-
A2
0.65
0.70
0.80
B1
0.19
-
0.24
b1
0.17
-
0.21
NOTE
5
c
0.13
-
0.15
c1
0.10
-
0.12
5
D
1.48
1.575
1.68
1, 2
E
1.50
1.60
1.70
E1
0.66
0.76
0.86
e1
0.50 BSC
e2
1.00 BSC
DIMENSIONS
TOLERANCES
aaa
0.10
e3
bbb
0.10
L
ccc
0.10
L1
ddd
0.10
L2
5
1, 2
0.50 BSC
0.15
0.205
0.30
0.40 REF
0.15 BSC

0°
-
8°
1
4°
-
10°
ECN: E11-2210-Rev. D, 08-Aug-11
DWG: 5868
Revision: 08-Aug-11
1
Document Number: 71348
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SC89Ć3
X
E
D
A
C
H
L
DETAIL X
3
MILLIMETERS
1
2
e1
b
e
INCHES
Dim
A
Min
Max
Min
Max
0.60
0.80
0.024
0.031
b
0.23
0.33
0.009
0.013
C
D
E
e
e1
H
L
0.10
0.20
0.004
0.008
1.50
1.70
0.059
0.067
0.75
0.95
0.030
0.037
1.00 BSC
0.50 BSC
0.040 BSC
0.020 BSC
1.50
1.70
0.059
0.067
0.30
0.50
0.012
0.020
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5869
Document Number: 71377
06-Jul-01
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead
0.014
0.031
(0.798)
0.020
(0.503)
(1.803)
0.071
(0.356)
0.264
(0.660)
0.054
(1.372)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72603
Revision: 21-Jan-08
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19
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 3-Lead
(0.38 )
)
0.0170
0.0260
(0.43 )
)
0.0150
(0.51)
)
(0.66 )
)
0.0200
(1.75 )
)
0.0690
RECOMMENDED MINIMUM PADS FOR SC-89: 3-LEAD
0.0250
0.0150
(0.64)
)
(0.38 )
)
0.0550
(1.40 )
)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72604
Revision: 21-Jan-08
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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