Si1022R Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Low On-Resistance: 1.25 • Low Threshold: 2.5 V • Low Input Capacitance: 30 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • Miniature Package • ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS D Marking Code: E Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free) • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Solid State Relays BENEFITS • • • • • Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Small Board Area ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TA = 25 °C TA = 85 °C Pulsed Drain Currenta Power Dissipationa ID IDM TA = 25 °C TA = 85 °C Thermal Resistance, Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range PD Unit V 330 240 mA 650 250 130 mW RthJA 500 °C/W TJ, Tstg - 55 to 150 °C Notes: a. Surface mounted on FR4 board, power applied for t 10 s. Document Number: 71331 S10-2687-Rev. F, 22-Nov-10 www.vishay.com 1 Si1022R Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 10 µA 60 VGS(th) VDS = VGS, ID = 0.25 mA 1 Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage 2.5 VDS = 0 V, VGS = ± 10 V ± 150 TJ = 85 °C IGSS Gate-Body Leakage ± 500 VDS = 0 V, VGS = ± 5 V ± 20 VDS = 50 V, VGS = 0 V Zero Gate Voltage Drain Current 100 VDS = 60 V, VGS = 0 V On-State Drain Currenta ID(on) 1 VDS = 10 V, VGS = 4.5 V 500 VDS = 7.5 V, VGS = 10 V 800 RDS(on) 3.0 TJ = 125 °C 5.0 VGS = 10 V, ID = 500 mA 1.25 TJ = 125 °C a Forward Transconductance Diode Forward Voltagea gfs VDS = 10 V, ID = 200 mA VSD VGS = 0 V, IS = 200 mA µA mA VGS = 4.5 V, ID = 200 mA Drain-Source On-State Resistancea nA 10 TJ = 85 °C IDSS V 2.25 100 mS 1.3 Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Charge Qg VDS = 10 V, ID = 250 mA, VGS = 4.5 V 0.6 Turn-On Time t(on) t(off) VDD = 30 V, RL = 150 , ID = 200 mA, VGEN = 10 V, Rg = 10 25 Turn-Off Time V 30 VDS = 25 V, VGS = 0 V, f = 1 MHz 6 pF 2.5 nC Switchingb, c 35 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71331 S10-2687-Rev. F, 22-Nov-10 Si1022R Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1200 1.0 6V TJ = - 55 °C VGS = 10 V thru 7 V 5V I D - Drain Current (mA) I D - Drain Current (A) 0.8 0.6 4V 0.4 900 25 °C 125 °C 600 300 0.2 3V 0 0.0 0 1 2 3 4 0 5 2 4 5 VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 50 VGS = 0 V f = 1 MHz 3.5 40 C - Capacitance (pF) 3.0 2.5 VGS = 4.5 V 2.0 1.5 VGS = 10 V 30 Ciss 20 Coss 1.0 10 Crss 0.5 0 0.0 0 200 400 600 800 0 1000 5 ID - Drain Current (mA) 10 20 25 Capacitance 2.0 7 VGS = 10 V at 500 mA VDS = 10 V ID = 250 mA 5 4 3 2 (Normalized) 1.6 RDS(on) - On-Resistance 6 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current V GS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V) 4.0 RDS(on) - On-Resistance (Ω) 1 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 1 0 0.0 0.1 0.2 0.3 0.4 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71331 S10-2687-Rev. F, 22-Nov-10 0.5 0.6 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1022R Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 5 RDS(on) - On-Resistance (Ω) I S - Source Current (A) VGS = 0 V 100 TJ = 125 °C 10 TJ = 25 °C 4 3 2 ID = 500 mA ID = 200 mA 1 TJ = - 55 °C 1 0 0 0.3 0.6 1.2 0.9 0 1.5 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-Source Voltage Source-Drain Diode Forward Voltage 0.4 3 0.2 2.5 2 Power (W) VGS(th) Variance (V) ID = 250 µA 0.0 - 0.2 - 0.4 1.5 1 - 0.6 TA = 25 °C 0.5 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 100 10 600 Time (s) TJ - Junction Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage Variance Over Temperature Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 500 °C/W 3. TJM - T A= PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71331. www.vishay.com 4 Document Number: 71331 S10-2687-Rev. F, 22-Nov-10 Package Information www.vishay.com Vishay Siliconix SC-75A: 3 Leads L2 A 2 D 1 D bbb D e2 2X D 3 L1 L B1(b1) 3 e1 3 E/2 1 2 E E1 1 1 bbb D 1 2 C bbb C D 4 ddd M C B 3 2X e3 B1 b1 2XB1 A– B B B 2X D c1 C With Tin Planting bbb D Section B-B 5 A A2 Base Metal C 4X Seating Plane A1 D DWG: 5868 Notes Dimensions in millimeters will govern. 1.Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2.Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 3.Datums A, B and D to be determined 0.10 mm from the lead tip. 4.Terminal positions are shown for reference only. 5.These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. DIMENSIONS TOLERANCES aaa 0.10 bbb 0.10 ccc 0.10 ddd C15-1445-Rev. F, 23-Nov-15 0.10 DIM. MILLIMETERS MIN. NOM. MAX. A - - 0.80 A1 0.00 - 0.10 NOTE A2 0.65 0.70 0.80 B1 0.19 - 0.24 b1 0.17 - 0.21 c 0.13 - 0.15 c1 0.10 - 0.12 5 D 1.48 1.575 1.68 1, 2 E 1.50 1.60 1.70 E1 0.66 0.76 0.86 e1 0.50 BSC e2 1.00 BSC e3 L 5 5 1, 2 0.50 BSC 0.15 0.205 L1 0.40 ref. L2 0.15 BSC 0.30 q 0° - 8° q1 4° - 10° Document Number: 71348 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 0.031 (0.798) 0.020 (0.503) (1.803) 0.071 (0.356) 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72603 Revision: 21-Jan-08 www.vishay.com 19 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000