UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage:* VCEO=400V * Collector Current up to 300mA ORDERING INFORMATION Ordering Number Lead Free Halogen Free MPSA44HL-AB3-R MPSA44HG-AB3-R MPSA44HL-T92-B MPSA44HG-T92-B MPSA44HL-T92-K MPSA44HG-T92-K MPSA44HL-T92-R MPSA44HG-T92-R www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., LTD Package SOT-89 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 B C E E B C E B C E B C Packing Tape Reel Tape Box Bulk Tape Reel 1 of 4 QW-R201-083.C MPSA44H NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation SYMBOL VCBO VCEO VEBO IC SOT-89 TO-92 PC RATINGS 800 400 6 300 500 625 UNIT V V V mA mW Junction Temperature TJ 125 °C Operating Temperature TOPR -20 ~ +85 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain (Note) Collector-Emitter Saturation Voltage SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) SMALL-SIGNAL CHARACTERISTICS Current Gain Bandwidth Product fT Output Capacitance COB Note: Pulse test: PW<300μs, Duty Cycle<2% TEST CONDITIONS IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 VCB=400V, IE=0 VCE=400V, IB=0 VEB=4V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA 40 82 45 40 VCE=20V,IC=10mA, f=100MHz VCB=20V, IE=0 f=1MHz 50 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 800 400 6 TYP MAX UNIT V V V 0.1 μA 0.5 μA 0.1 μA 240 240 240 240 0.4 0.5 0.75 0.75 V 7 MHz pF V 2 of 4 QW-R201-083.C MPSA44H NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS ON Voltage 1.0 Collector SaturationRegion 0.5 TA=25℃ 0.8 0.4 VBE(SAT), IC/IB=10 IC=10mA 0.6 0.3 VBE(ON), VCE=10V 0 VCE(SAT), IC/IB=10 10-1 100 101 102 Collector Current, IC (mA) 0.1 103 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IC=50mA 0.2 0.4 0.2 IC=1mA TA=25℃ 0 1 102 103 104 10 Base Current, IB (µA) 105 3 of 4 QW-R201-083.C MPSA44H TYPICAL CHARACTERISTICS(Cont.) High Frequency Current Gain 102 Safe Operating Area 101 103 1s 102 101 100 100 0.1ms C 100 101 102 Collector Current, IC (mA) 10 C 10-1 -1 10 1ms 3 5 =2 TC 100 Valid Duty Cycle<10% 5 Collector Current, IC (mA) VCE=10V f=10MHz TA=25 C =2 TA Small Signal Current Gain, hFE NPN SILICON TRANSISTOR 101 102 103 Collector Voltage (V) 104 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-083.C