Si1926DL Vishay Siliconix Dual N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • ESD Protected: 1800 V • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 0.47 APPLICATIONS SOT-363 SC-70 (6-LEADS) S1 1 6 • Low Power Load Switch D1 D1 D2 G1 2 5 G2 D2 3 4 S2 PD XX YY Marking Code Lot Traceability and Date Code G1 G2 Part # Code Top View Ordering Information: Si1926DL-T1-E3 (Lead (Pb)-free) Si1926DL-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C 0.30 ID 0.34b, c 0.27b, c IDM Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C 0.43 IS 0.25b, c TC = 25 °C 0.51 0.33 PD W 0.30b, c 0.20b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 0.65 TC = 70 °C TA = 25 °C V 0.37 TA = 70 °C Pulsed Drain Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter b, d Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t≤5s RthJA 360 415 Steady State RthJF 300 350 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 400 °C/W. Document Number: 73684 S10-0792-Rev. D, 05-Apr-10 www.vishay.com 1 Si1926DL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 10 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs V 56.7 mV/°C -3 1 2.5 V ± 150 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 85 °C 10 VDS = ≥ 10 V, VGS = 4.5 V 0.50 VDS = ≥ 7.5 V, VGS = 10 V 0.65 A VGS = 10 V, ID = 0.34 A 1.4 VGS = 4.5 V, ID = 0.23 A 3 VDS = 30 V, ID = 0.2 A µA 159 Ω ms Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 18.5 VDS = 30 V, VGS = 0 V, f = 1 MHz 7.5 VDS = 30 V, VGS = 10 V, ID = 0.34 A 0.9 1.4 0.5 0.75 4.2 VDS = 30 V, VGS = 4.5 V, ID = 0.34 A tr Turn-Off DelayTime td(off) Fall Time 0.2 nC 0.15 f = 1 MHz td(on) Rise Time pF VDD = 30 V, RL = 100 Ω ID ≅ 0.3 A, VGEN = 10 V, Rg = 1 Ω tf 160 240 6.5 10 12 18 13 22 14 21 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 0.43 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 0.65 IS = 0.3 A IF = 0.6 A, dI/dt = 100 A/µs A 0.8 1.2 V 16.5 25 nC 13 20 13.5 ns 3 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73684 S10-0792-Rev. D, 05-Apr-10 Si1926DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.7 VGS = 10 V thru 5 V VGS = 4 V 0.5 I D - Drain Current (A) I D - Drain Current (A) 0.6 0.4 0.3 0.2 0.3 0.2 TC = 25 °C 0.1 VGS = 3 V TC = 125 °C 0.1 0.0 0.0 TC = - 55 °C 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 1 2 3 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics Curves vs. Temperature 3.0 32 24 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.5 2.0 VGS = 4.5 V 1.5 VGS = 10 V 1.0 Ciss 16 Coss 8 0.5 Crss 0.0 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 10 ID - Drain Current (A) 20 50 60 Capacitance 10 1.6 VGS = 10 V, ID = 0.5 A ID = 0.5 A 8 6 VDS = 48 V 4 2 (Normalized) 1.4 VDS = 30 V R DS(on) - On-Resistance VG S - Gate-to-Source Voltage (V) 40 VDS - Drain-Source Voltage (V) On-Resistance vs. Drain Current 0 0.0 30 1.2 VGS = 4.5 V, ID = 0.2 A 1.0 0.8 0.3 0.6 0.9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73684 S10-0792-Rev. D, 05-Apr-10 1.2 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1926DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5.0 1000 TA = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 0.5 A TA = 25 °C 100 10 1 0.0 4.0 3.0 TA = 125 °C 2.0 TA = 25 °C 1.0 0.0 0.3 0.6 0.9 1.2 1.5 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs. Temperature 2.0 5 1.8 4 10 Power (W) VGS(th) (V) ID = 250 µA 1.6 1.4 1.2 1.0 - 50 3 2 1 - 25 0 25 50 75 100 125 0 10-3 150 10 -2 10-1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 1 100 600 Limited by R DS(on)* I D - Drain Current (A) 10 ms 0.1 100 ms 1s 10 s 0.01 TA = 25 °C Single Pulse DC BVDSS Limited 0.001 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 73684 S10-0792-Rev. D, 05-Apr-10 Si1926DL Vishay Siliconix 0.5 0.5 0.4 0.4 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.3 0.2 0.3 0.2 0.1 0.1 0.0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73684 S10-0792-Rev. D, 05-Apr-10 www.vishay.com 5 Si1926DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 400 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73684. www.vishay.com 6 Document Number: 73684 S10-0792-Rev. D, 05-Apr-10 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 AN814 Vishay Siliconix Dual-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION This technical note discusses the pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for dual-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250 mA) need to be switched, either directly or by using a level shift configuration. Vishay provides these devices with a range of on-resistance specifications in 6-pin versions. The new 6-pin SC-70 package enables improved on-resistance values and enhanced thermal performance. PIN-OUT Figure 1 shows the pin-out description and Pin 1 identification for the dual-channel SC-70 device in the 6-pin configuration. SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 applications for which this package is intended. For the 6-pin device, increasing the pad patterns yields a reduction in thermal resistance on the order of 20% when using a 1-inch square with full copper on both sides of the printed circuit board (PCB). EVALUATION BOARDS FOR THE DUAL SC70-6 The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as described in the previous section, Basic Pad Patterns. The board allows interrogation from the outer pins to 6-pin DIP connections permitting test sockets to be used in evaluation testing. The thermal performance of the dual SC-70 has been measured on the EVB with the results shown below. The minimum recommended footprint on the evaluation board was compared with the industry standard 1-inch square FR4 PCB with copper on both sides of the board. THERMAL PERFORMANCE Top View FIGURE 1. For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the dual SC-70 6-pin package measured as junction-to-foot thermal resistance is 300_C/W typical, 350_C/W maximum. The “foot” is the drain lead of the device as it connects with the body. Note that these numbers are somewhat higher than other LITTLE FOOT devices due to the limited thermal performance of the Alloy 42 lead-frame compared with a standard copper lead-frame. Junction-to-Ambient Thermal Resistance (dependent on PCB size) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the 6-pin SC-70. This basic pad pattern is sufficient for the low-power Document Number: 71237 12-Dec-03 The typical RθJA for the dual 6-pin SC-70 is 400_C/W steady state. Maximum ratings are 460_C/W for the dual. All figures based on the 1-inch square FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the dual 6-pin SC-70 package at two different ambient temperatures. www.vishay.com 1 AN814 Vishay Siliconix SC-70 (6-PIN) PD + Dual EVB Elevated Ambient 60 _C TJ(max) * TA Rq JA o o PD + 150 Co* 25 C 400 CńW PD + 312 mW PD + TJ(max) * TA Rq JA o o PD + 150 Co* 60 C 400 CńW PD + 225 mW NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-70 will handle power dissipation in excess of 0.2 W. 400 Thermal Resistance (C/W) Room Ambient 25 _C 500 300 200 100 1” Square FR4 PCB 0 10-5 10-4 Testing LITTLE FOOT SC-70 (6-PIN) 1) Minimum recommended pad pattern (see Figure 2) on the EVB of 0.5 inches x 0.6 inches. 518_C/W 2) Industry standard 1” square PCB with maximum copper both sides. 413_C/W 2 10-2 10-1 1 10 100 1000 Time (Secs) To aid comparison further, Figure 2 illustrates the dual-channel SC-70 thermal performance on two different board sizes and two different pad patterns. The results display the thermal performance out to steady state. The measured steady state values of RθJA for the dual 6-pin SC-70 are as follows: www.vishay.com 10-3 FIGURE 2. Comparison of Dual SC70-6 on EVB and 1” Square FR4 PCB. The results show that if the board area can be increased and maximum copper traces are added, the thermal resistance reduction is limited to 20%. This fact confirms that the power dissipation is restricted with the package size and the Alloy 42 leadframe. ASSOCIATED DOCUMENT Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version, REcommended Pad Pattern and Thermal Performance, AN815, (http://www.vishay.com/doc?71334). Document Number: 71237 12-Dec-03 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1