UNISONIC TECHNOLOGIES CO., LTD 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1 DESCRIPTION The UTC 4128D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4128D is suitable for commonly power amplifier circuit, electronic ballasts and energy-saving light etc. TO-126 FEATURES * High switching speed * High reliability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4128DL-T60-K 4128DG-T60-K Note: Pin Assignment: B: Base C: Collector E: Emitter 4128DL-T60-T Package TO-126 Pin Assignment 1 2 3 B C E (1)Packing Type (1) B: Bulk (2)Package Type (2) T60: TO-126 (3)Lead Free (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Packing Bulk 1 of 3 QW-R204-029.A 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage (VBE=0) VCES 350 V Collector-Emitter Voltage (IB=0) VCEO 200 V Emitter-Base Voltage VEBO 7 V 5 A DC IC Collector Current Pulse (Note 2) ICP 10 A 2 A DC IB Base Current Pulse (Note 2) IBP 4 A Total Dissipation PC 40 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute maximum ratings are those values beyond which the device could be permanently damaged. 2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%. THERMAL CHARACTERISTICS PARAMETER SYMBOL θJC Junction to Case RATINGS 3.125 UNIT °C/W ELECTRICAL CHARACTERISTICS PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(SAT)1 VCE(SAT)2 VBE(SAT) hFE1 hFE2 fT tS tF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC=1mA, IB=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=350V, IE=0 VCE=200V, IB=0 VEB=7V, IC=0 IC=1A, IB=0.2A IC=3A, IB=0.6A IC=3A, IB=0.6A IC=0.8A,VCE=5V IC=3A,VCE=5V IC=0.5A, VCE=10V VCC=24V, IC=0.5A, IB1=-IB2=0.1A MIN TYP MAX UNIT 350 V 200 V 7 V 100 µA 50 µA 10 μA 0.8 V 1.5 V 1.6 V 8 50 8 4 MHz 4 μs 0.7 μs 2 of 3 QW-R204-029.A 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R204-029.A