UNISONIC TECHNOLOGIES CO., LTD 4126D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC 4126D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4126D is suitable for commonly power amplifier circuit, electronic ballasts and energy-saving light etc. FEATURES * High switching speed * High reliability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4126DL-T92-B 4126DG-T92-B 4126DL-T92-K 4126DG-T92-K 4126DL-T92-R 4126DG-T92-R 4126DL-T60-K 4126DG-T60-K 4126DL-TM3-T 4126DG-TM3-T Note: Pin Assignment: B: Base C: Collector E: Emitter 4126DL-T60-K Package TO-92 TO-92 TO-92 TO-126 TO-251 Pin Assignment 1 2 3 B C E B C E B C E B C E B C E Packing Tape Box Bulk Tape Reel Bulk Tube (1)Packing Type (1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube (2)Package Type (2) T60: TO-126, TM3: TO-251, T92: TO-92 (3)Lead Free (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R204-030.B 4126D NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage (VBE=0) VCES 350 V Collector-Emitter Voltage (IB=0) VCEO 200 V Emitter-Base Voltage VEBO 7 V 3 A DC IC Collector Current Pulse (Note 2) ICP 6 A 1 A DC IB Base Current Pulse (Note 2) IBP 2 A TO-92 1.5 W Total Dissipation PC TO-126/TO-251 40 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute maximum ratings are those values beyond which the device could be permanently damaged. 2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%. THERMAL CHARACTERISTICS PARAMETER TO-92 Junction to Case TO-126/TO-251 SYMBOL θJC RATINGS 80 3.125 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(SAT)1 VCE(SAT)2 VBE(SAT) hFE1 hFE2 fT tS tF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC=1mA, IB=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=350V, IE=0 VCE=200V, IB=0 VEB=7V, IC=0 IC=1A, IB=0.2A IC=3A, IB=0.6A IC=2A, IB=0.5A IC=0.5A,VCE=5V IC=2A,VCE=5V IC=0.5A, VCE=10V VCC=24V, IC=0.5A, IB1=-IB2=0.1A MIN TYP MAX UNIT 350 V 200 V 7 V 100 µA 50 µA 10 μA 0.8 V 1.6 V 1.5 V 8 50 7 4 MHz 4 μs 0.7 μs 2 of 3 QW-R204-030.B 4126D NPN EPITAXIAL SILICON TRANSISTOR Collector Current, IC (mA) Collector Current, IC (mA) TYPICAL CHARACTERISTICS Collector Current vs. CollectorEmitter Voltage (For TO-251) 3.0 IB=237.53mA 3.0 Collector Current, IC (A) Collector Current, IC (A) 3.6 2.4 1.8 IB=123.92mA 1.2 0.6 0 Collector Current vs. CollectorEmitter Voltage (For TO-126) 2.5 IB=158.35mA 2.0 1.5 1.0 IB=71.43mA 0.5 0 1 2 3 4 5 Collector-Emitter Voltage, VCE (V) 0 0 1 2 3 4 6 5 Collector-Emitter Voltage, VCE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R204-030.B