datasheet

SKM400GB07E3
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
650
V
Tc = 25 °C
506
A
Tc = 80 °C
381
A
400
A
ICnom
ICRM
SEMITRANS® 3
Trench IGBT Modules
SKM400GB07E3
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 650 V
1200
A
-20 ... 20
V
6
µs
-40 ... 175
°C
Tc = 25 °C
449
A
Tc = 80 °C
326
A
400
A
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
IFnom
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x Icnom
• Fast & soft inverse CAL diodes
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated gate resistor
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
IFRM
IFRM = 2xIFnom
800
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2646
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
A
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
• Use of soft RG necessary
AC sinus 50 Hz, t = 1 min
500
-40 ... 125
VCE0
Conditions
IC = 400 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.45
1.92
V
Tj = 150 °C
1.70
2.10
V
Tj = 25 °C
0.9
1
V
Tj = 150 °C
0.82
0.9
V
Tj = 25 °C
1.38
2.3
mΩ
2.2
3.00
mΩ
5.8
6.4
V
0.75
mA
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 6.4 mA
ICES
VGE = 0 V
VCE = 650 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
VCC = 300 V
IC = 400 A
VGE = +15/-8 V
RG on = 1 Ω
RG off = 4.2 Ω
di/dton = 7000 A/µs
di/dtoff = 5000 A/µs
du/dt = 2200 V/µs
Ls = 18 nH
per IGBT
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Tj = 150 °C
5.1
Tj = 25 °C
Tj = 150 °C
mA
f = 1 MHz
24.7
nF
f = 1 MHz
1.54
nF
f = 1 MHz
0.73
nF
3200
nC
1
Tj = 150 °C
Ω
190
ns
Tj = 150 °C
60
ns
Tj = 150 °C
4
mJ
Tj = 150 °C
850
ns
Tj = 150 °C
50
ns
Tj = 150 °C
17
mJ
0.12
K/W
GB
© by SEMIKRON
Rev. 1.0 – 21.05.2015
1
SKM400GB07E3
Characteristics
Symbol
Conditions
typ.
max.
Unit
Tj = 25 °C
1.39
1.75
V
Tj = 150 °C
1.38
1.76
V
Tj = 25 °C
1.04
1.24
V
Tj = 150 °C
0.85
0.99
V
Tj = 25 °C
0.88
1.30
mΩ
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 7000 A/µs T = 150 °C
j
VGE = -8 V
T
j = 150 °C
VCC = 300 V
per diode
1.32
1.93
mΩ
15
nH
TC = 25 °C
0.55
mΩ
TC = 125 °C
0.85
mΩ
Inverse diode
VF = VEC IF = 400 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
SEMITRANS® 3
Trench IGBT Modules
SKM400GB07E3
IRRM
Qrr
Err
Rth(j-c)
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x Icnom
• Fast & soft inverse CAL diodes
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated gate resistor
459
A
61
µC
12
mJ
0.19
K/W
Module
LCE
RCC'+EE'
Features
chiplevel
min.
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
0.02
to terminals M6
0.038
K/W
3
5
Nm
2.5
5
Nm
Nm
w
325
g
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
• Use of soft RG necessary
GB
2
Rev. 1.0 – 21.05.2015
© by SEMIKRON
SKM400GB07E3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 21.05.2015
3
SKM400GB07E3
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 1.0 – 21.05.2015
© by SEMIKRON
SKM400GB07E3
SEMITRANS 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1.0 – 21.05.2015
5