datasheet

SKiM429GD17E4HD
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
1700
V
Ts = 25 °C
595
A
Ts = 70 °C
479
A
420
A
ICnom
ICRM
VGES
SKiM® 93
tpsc
Trench IGBT Modules
SKiM429GD17E4HD
Tj
ICRM = 3xICnom
VCC = 1200 V
VGE ≤ 15 V
VCES ≤ 1700 V
1260
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Ts = 25 °C
413
A
Ts = 70 °C
298
A
450
A
Tj = 150 °C
Inverse diode
IF
Tj = 150 °C
IFnom
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Top = -40 … +125°C for
Inverse Diode, Top = -40 … +150°C for
IGBT
IFRM
IFRM = 2xIFnom
900
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
3699
A
-40 ... 150
°C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50 Hz, t = 1 min
700
A
-40 ... 125
°C
3300
V
Characteristics
Symbol
typ.
max.
Unit
Tj = 25 °C
1.90
2.25
V
Tj = 125 °C
2.1
2.3
V
VGE = 15 V
chiplevel
Tj = 25 °C
1.1
1.2
V
Tj = 125 °C
1
1.1
V
rCE
VGE = 15 V
chip
Tj = 25 °C
1.9
2.5
mΩ
2.6
2.9
mΩ
VGE(th)
VGE=VCE, IC = 16.8 mA
5.8
6.4
V
ICES
VGE = 0 V
VCE = 1700 V
Tj = 25 °C
0.15
0.45
mA
f = 1 MHz
33.00
nF
f = 1 MHz
1.38
nF
IGBT
VCE(sat)
VCE0
Cies
Coes
Cres
Conditions
IC = 420 A
VGE = 15 V
chiplevel
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
VCC = 1200 V
IC = 420 A
RG on = 3.6 Ω
RG off = 3.6 Ω
di/dton = 5200 A/µs
di/dtoff = 2200 A/µs
min.
Tj = 125 °C
5.2
mA
f = 1 MHz
Tj = 125 °C
1.08
nF
6660
nC
2.7
Ω
390
ns
Tj = 125 °C
80
ns
Tj = 125 °C
245
mJ
Tj = 125 °C
1005
ns
Tj = 125 °C
170
ns
Tj = 125 °C
180
per IGBT
mJ
0.079
K/W
GD
© by SEMIKRON
Rev. 9 – 14.01.2015
1
SKiM429GD17E4HD
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 420 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
SKiM® 93
IRRM
Trench IGBT Modules
SKiM429GD17E4HD
Qrr
Err
Rth(j-s)
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
typ.
max.
Unit
Tj = 25 °C
1.7
1.9
V
Tj = 125 °C
1.6
1.8
V
Tj = 25 °C
1.1
1.3
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
1.3
1.3
mΩ
1.8
1.8
mΩ
Tj = 125 °C
IF = 420 A
Tj = 125 °C
di/dtoff = 5990 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 1200 V
per diode
500
A
140
µC
99
mJ
0.169
K/W
Module
LCE
RCC'+EE'
Features
chiplevel
min.
terminal-chip
10
nH
Ts = 25 °C
0.3
mΩ
Ts = 125 °C
0.5
mΩ
1042
g
w
Temperature Sensor
R100
TSensor = 100 °C (R25 = 5 kΩ)
339
Ω
B100/125
R(T) = R100exp[B100/125(1/T-1/373)];
T[K];
4096
K
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Top = -40 … +125°C for
Inverse Diode, Top = -40 … +150°C for
IGBT
GD
2
Rev. 9 – 14.01.2015
© by SEMIKRON
SKiM429GD17E4HD
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 9 – 14.01.2015
3
SKiM429GD17E4HD
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 9 – 14.01.2015
© by SEMIKRON
SKiM429GD17E4HD
SKIM 93
GD
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 9 – 14.01.2015
5