datasheet

SEMiX453GD17E4c
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1700
V
Tc = 25 °C
762
A
Tc = 80 °C
579
A
450
A
ICnom
ICRM
SEMiX® 33c
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 1000 V
VGE ≤ 15 V
VCES ≤ 1700 V
Tj = 150 °C
1350
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Inverse diode
SEMiX453GD17E4c
VRRM
IF
Tj = 25 °C
Tj = 175 °C
1700
V
Tc = 25 °C
482
A
Tc = 80 °C
354
A
450
A
IFnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125 °C
max.
• Product reliability results are valid for
Tj=150 °C
IFRM
IFRM = 2xIFnom
900
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2565
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
rCE
Conditions
IC = 450 A
VGE = 15 V
chiplevel
chiplevel
VGE = 15 V
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.90
2.20
V
Tj = 150 °C
2.26
2.45
V
Tj = 25 °C
1.1
1.2
V
Tj = 150 °C
1
1.1
V
Tj = 25 °C
1.8
2.2
mΩ
Tj = 150 °C
2.8
3
mΩ
5.8
6.4
V
5
mA
VGE(th)
VGE=VCE, IC = 18 mA
ICES
VGE = 0 V
VCE = 1700 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
5.2
Tj = 25 °C
mA
f = 1 MHz
36
nF
f = 1 MHz
1.50
nF
f = 1 MHz
1.14
nF
QG
VGE = - 8 V...+ 15 V
3600
nC
RGint
Tj = 25 °C
VCC = 1200 V
IC = 450 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 2 Ω
di/dton = 7560 A/µs
di/dtoff = 2400 A/µs
du/dt = 5320 V/µs
Ls = 30 nH
1.67
Ω
td(on)
tr
Eon
td(off)
tf
Eoff
Tj = 150 °C
270
ns
Tj = 150 °C
61
ns
Tj = 150 °C
186
mJ
Tj = 150 °C
810
ns
Tj = 150 °C
170
ns
Tj = 150 °C
183
mJ
GD
© by SEMIKRON
Rev. 2 – 20.02.2015
1
SEMiX453GD17E4c
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
SEMiX® 33c
Rth(j-c)
Conditions
VCC = 1200 V
IC = 450 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 2 Ω
di/dton = 4250 A/µs
di/dtoff = 1950 A/µs
du/dt = 4800 V/µs
Ls = 80 nH
per IGBT
min.
typ.
max.
Unit
Tj = 150 °C
310
Tj = 150 °C
110
ns
Tj = 150 °C
84
mJ
Tj = 150 °C
760
ns
Tj = 150 °C
200
ns
Tj = 150 °C
150
mJ
ns
0.056
K/W
typ.
max.
Unit
1.98
2.37
V
Characteristics
Symbol
SEMiX453GD17E4c
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Conditions
Inverse diode
VF = VEC IF = 450 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
IRRM
Qrr
Err
IRRM
Qrr
Err
Remarks
Rth(j-c)
• Case temperature limited to TC=125 °C
max.
• Product reliability results are valid for
Tj=150 °C
LCE
chiplevel
IF = 450 A
di/dtoff = 7400 A/µs
VGE = -15 V
VR = 1200 V
IF = 450 A
di/dtoff = 4300 A/µs
VGE = -15 V
VR = 900 V
per diode
min.
Tj = 25 °C
Tj = 150 °C
2.11
2.52
V
1.32
1.56
V
1.08
1.22
V
1.5
1.8
mΩ
Tj = 150 °C
2.3
2.9
mΩ
Tj = 150 °C
540
Tj = 150 °C
160
µC
Tj = 150 °C
122
mJ
Tj = 25 °C
1.16
Tj = 150 °C
Tj = 25 °C
1.2
A
Tj = 150 °C
470
A
Tj = 150 °C
155
µC
Tj = 150 °C
107
mJ
0.125
K/W
Module
RCC'+EE'
res. terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
20
nH
TC = 25 °C
0.85
mΩ
TC = 125 °C
1.2
mΩ
0.014
K/W
to terminals (M6)
Mt
3
5
2.5
5
Nm
Nm
Nm
w
900
g
Temperature Sensor
R100
B100/125
Tc=100°C (R25=5 kΩ)
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
493 ± 5%
Ω
3550
±2%
K
GD
2
Rev. 2 – 20.02.2015
© by SEMIKRON
SEMiX453GD17E4c
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 20.02.2015
3
SEMiX453GD17E4c
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 2 – 20.02.2015
© by SEMIKRON
SEMiX453GD17E4c
SEMiX 33c
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 2 – 20.02.2015
5