UNISONIC TECHNOLOGIES CO., LTD MGBR10S45 DIODE MOS GATED BARRIER RECTIFIER 1 1 DESCRIPTION TO-220-2 TO-252 The UTC MGBR10S45 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc. FEATURES * Super low forward voltage drop * High switching speed TO-252D TO-252/TO-277 ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MGBR10S45L-TA2-T MGBR10S45G-TA2-T TO-220-2 MGBR10S45L-TN3-R MGBR10S45G-TN3-R TO-252 MGBR10S45L-T27-R MGBR10S45G-T27-R TO-277 Note: Pin Assignment: A: Anode K: Common Cathode TO-277 SYMBOL TO-220-2 1 1 Pin Assignment 1 2 3 K A A K A A K A Packing Tube Tape Reel Tape Reel MARKING TO-220-2 / TO-252 / TO-252D www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd TO-277 1 of 3 QW-R601-115.D MGBR10S45 DIODE ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 45 V Working Peak Reverse Voltage VRWM 45 V Peak Repetitive Reverse Voltage VRRM 45 V RMS Reverse Voltage VR(RMS) 32 V Average Rectified Output Current TC=140°C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms IFSM 150 A Single Half Sine-Wave Superimposed on Rated Load Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case TO-220-2 TO-252 TO-252D TO-277 TO-220-2 TO-252 TO-252D TO-277 SYMBOL RATINGS 60 UNIT θJA 110 °C/W 73 (Note 3) 2 θJC °C/W 2.5 13 (Note 3) ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified.) PARAMETER Reverse Breakdown Voltage (Note 1) SYMBOL V(BR)R TEST CONDITIONS IR=0.45mA IF=10A, TJ=25°C Forward Voltage Drop VFM IF=10A, TJ=125°C VR=45V, TJ=25°C Leakage Current (Note 1) IRM VR=45V, TJ=125°C Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. Thermal resistance junction to case mounted on heatsink. 3. Mounted on an FR4 PCB, single-sided copper, with 100cm2 copper pad area. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 45 TYP MAX UNIT V 0.48 V 0.43 V 50 500 μA 12 40 mA 2 of 3 QW-R601-115.D MGBR10S45 DIODE TYPICAL CHARACTERISTICS 100 10 25℃ VF均值 IF (A) 125℃ VF均值 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 VF (V) Typical Reverse Characteristics 16 1E-1 14 1E-2 Instantaneous Reverse Current (A) Average Rectified Current (A) Forward Derating Curve 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 Case Temperature (°C) 1E-3 1E-4 1E-5 1E-6 1E-7 VR=45V 25 50 75 100 125 150 Case Temperature (°C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R601-115.D