UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance. The UTC 6N10 is generally applied in voltage applications, such as DC motor control, audio amplifier and high efficiency switching DC/DC converters. 1 TO-252D FEATURES * RDS(ON) < 0.2Ω @ VGS=10V, ID=3A * Fast switching * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N10G-AA3-R 6N10L-TN3-R 6N10G-TN3-R 6N10L-TND-R 6N10G-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source 1 Package SOT-223 TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S SOT-223 Packing Tape Reel Tape Reel Tape Reel MARKING SOT-223 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd TO-252 / TO-252D 1 of 4 QW-R502-486.E 6N10 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous ID 6.5 A Continuous Drain Current Pulsed IDM 8.0 A Repetitive Avalanche Energy L=0.1mH EAR 1.25 mJ (Duty Cycle ≤1%) SOT-223 2.2 Power Dissipation PD W TO-252/TO-252D 16 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS SOT-223 55 Junction to Ambient θJA TO-252/TO-252D 100 SOT-223 12 Junction to Case θJC TO-252/TO-252D 7.5 Note: θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case reference is defined as the solder mounting surface of the drain pins. θJC is guaranteed by design while θJA is determined by the user’s board deign. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W thermal 2 of 4 QW-R502-486.E 6N10 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse On-State Drain Current (Note 2) ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 2) IGSS ID(on) VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=100V, VGS=0V VDS=100V, VGS=0V, TJ=125°C VDS=100V, VGS=0V, TJ=150°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V VDS=5V, VGS=10V 100 VDS=VGS, ID=250µA VGS=10V, ID=3A VGS=10V, ID=3A, TJ=125°C VGS=10V, ID=3A, TJ=150°C VGS=4.5V, ID=1.0A VDS=15V, ID=3A 1.0 Forward Transconductance (Note 2) gFS DYNAMIC PARAMETERS (Note1) Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note3) tD(ON) Rise Time (Note 3) tR VDD=30V, RL=7.5Ω, ID=0.5A, VGEN=10V, RG=25 Ω Turn-OFF Delay Time (Note 3) tD(OFF) Fall-Time (Note 3) tF Total Gate Charge (Note 3) QG VDS=50V, VGS=10V, ID=1.3A Gate to Source Charge (Note 3) QGS IG=100µA Gate to Drain Charge (Note 3) QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage (Note 2) VSD IF=6.5A, VGS=0V Reverse Recovery Time tRR IF=6.5A, di/dt=100A/µs Notes: 1. Guaranteed by design, not subject to production testing. 2. Pulse test; pulse width ≤300 ≤μs, duty cycle ≤2%. 3. Independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 50 250 +100 -100 8.0 V µA µA µA nA nA A 3.0 0.150 0.200 0.350 0.450 0.160 0.225 8.5 320 80 17 28 30 148 52 27 2.4 6.8 0.9 35 V Ω S pF pF pF 58 60 178 82 75 ns ns ns ns nC nC nC 8.0 A 1.3 60 V ns 3 of 4 QW-R502-486.E 6N10 TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 200 200 150 150 100 100 50 50 0 0 0 0.5 1 2 1.5 2.5 Gate Threshold Voltage, VTH (V) Coutinuous Drain-Soarce Current, ISD (A) 0 20 80 100 120 40 60 Drain-Source Breakdown Voltage, BVDSS (V) Drain Current, ID (A) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-486.E