UNISONIC TECHNOLOGIES CO., LTD UT108N03

UNISONIC TECHNOLOGIES CO., LTD
UT108N03
Power MOSFET
30V, 108A N-CHANNEL
POWER MOSFET
1
1

DESCRIPTION
TO-220
TO-251
As advanced N-channel level power MOSFET, the UT108N03 is
produced using UTC’s advanced trench technology, which has been
specially tailored to minimize the on-resistance and maintain low
gate charge for superior switching performance.

FEATURES
TO-252D
TO-252
* RDS(ON) < 5.3mΩ @VGS = 10 V, ID = 25 A
* Low Capacitance
* Optimized Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified

1
1
SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT108N03L-TA3-T
UT108N03G-TA3-T
UT108N03L-TM3-T
UT108N03G-TM3-T
UT108N03L-TN3-R
UT108N03G-TN3-R
UT108N03L-TND-R
UT108N03G-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
TO-220
TO-251
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tape Reel
(1) R: Tape Reel, T: Tube
UT108N03L-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package

Package
(2) TA3: TO-220, TM3: TO-251, TN3: TO-252
TND: TO-252D
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-197.I
UT108N03

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
ID
108
A
Pulsed Drain Current (Note 2)
IDM
432
A
Avalanche Energy (Note 3)
EAS
580
mJ
TO-220
107
Power Dissipation
PD
W
TO-251/TO-252
60
TO-252D
Junction Temperature
TJ
+150
°C
Strong Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. tP≤10μs, pulsed, TA=25°C
3. VGS=10V, TJ=25°C, ID=35A, VS≤25V, tP=0.25ms, RGS=50Ω

THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-251/TO-252
TO-252D
TO-220
Junction to Case
TO-251/TO-252
TO-252D
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
62.5
UNIT
°C /W
100
°C /W
1.4
°C /W
2.5
°C/W
2 of 4
QW-R502-197.I
UT108N03

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=30V, VGS=0V
VDS=0V, VGS=±20V
30
VGS(TH)
VDS=VGS, ID=1mA
VGS=10V, ID=25A
VGS=5V, ID=25A
1
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=15V, RG=10Ω, VGS=5V,
RD=0.6Ω, ID =1A
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDD =15V, VGS =5V, ID =40A
Gate Source Charge
QGS
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=108A, VGS=0 V
Maximum Pulsed Drain-Source Diode
ISM
(Note)
Forward Current
Body Diode Reverse Recovery Time
trr
IS=20A, dIS/dt=-100A/μs,
VGS=0V
Body Diode Reverse Recovery Charge
QRR
Note: tP≤10μs, pulsed
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
UNIT
0.05
0.02
1
100
V
µA
nA
4.2
3
5.3
6.6
V
mΩ
mΩ
2900
500
350
pF
pF
pF
60
100
650
300
310
50
90
ns
ns
ns
ns
nC
nC
nC
34
27
1.25
V
432
A
ns
nC
3 of 4
QW-R502-197.I
UT108N03
Power MOSFET
TYPICAL CHARACTERISTICS

300
Drain Current vs. Drain-Source
Breakdown Voltage
1000
Drain Current, ID (µA)
Drain Current, ID (µA)
250
Drain Current vs. Gate Threshold Voltage
1200
200
150
100
50
800
600
400
200
0
0
0
20
30
40
50
10
Drain-Source Breakdown Voltage, BVDSS(V)
1
2
1.5
0.5
Gate Threshold Voltage, VTH (V)
2.5
Drain Current, ID (A)
Drain-Source Diode Forward
Current, IS (A)
0
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R502-197.I