Si4840BDY Datasheet

Si4840BDY
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)d
0.009 at VGS = 10 V
19
0.012 at VGS = 4.5 V
16
VDS (V)
40
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS directive 2002/95/EC
Qg (Typ.)
15 nC
APPLICATIONS
• Synchronous Rectification
• POL, IBC
- Secondary Side
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
G
Top View
S
Ordering Information: Si4840BDY-T1-E3 (Lead (Pb)-free)
Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Limit
40
± 20
19
15
12.4a, b
9.9a, b
50
15
11
5
2.1a, b
6
3.8
2.5a, b
1.6a, b
- 55 to 150
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
37
17
Maximum
50
21
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
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1
Si4840BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
40
mV/°C
-6
1
3
V
± 100
nA
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
5
VDS ≥ 5 V, VGS = 10 V
50
µA
A
VGS = 10 V, ID = 12.4 A
0.0074
0.009
VGS = 4.5 V, ID = 10.8 A
0.0095
0.012
VDS = 15 V, ID = 12.4 A
56
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
2000
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 12.4 A
VDS = 10 V, VGS = 4.5 V, ID = 12.4 A
td(off)
pF
33
50
15
23
6.7
f = 1 MHz
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
1.4
2.1
25
40
12
20
25
40
tf
10
15
td(on)
10
15
tr
td(off)
nC
5.1
td(on)
tr
260
150
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
15
25
30
45
10
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
30
50
IS = 10 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
30
60
ns
26
52
nC
17.5
12.5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
Si4840BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
10
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
3V
10
6
TC = 25 °C
4
TC = 125 °C
2
2V
0
0
0.4
0.8
1.2
1.6
0
0.0
2.0
TC = - 55 °C
0.5
1.0
1.5
2.5
Output Characteristics
3.5
35
40
125
150
Transfer Characteristics
2400
0.012
Ciss
2000
0.010
C - Capacitance (pF)
VGS = 4.5 V
0.008
VGS = 10 V
1600
1200
800
0.006
Coss
400
0.004
Crss
0
0
10
20
30
40
50
0
5
10
15
20
25
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
VDS = 20 V
ID = 12.4 A
8
1.6
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
3.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
RDS(on) - On-Resistance (Ω)
2.0
6
4
2
VGS = 10 V
ID = 12.4 A
1.4
1.2
1.0
0.8
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
30
35
0.6
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4840BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
0.030
ID = 12.4 A
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.025
TJ = 150 °C
10
TJ = 25 °C
1
0.0
0.020
125 °C
0.015
0.010
25 °C
0.005
0.000
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.4
50
ID = 250 µA
2.2
40
30
Power (W)
V GS(th) (V)
2.0
1.8
1.6
20
1.4
10
1.2
1.0
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
600
Limited by RDS(on)*
100 µs
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
1s
10 s
0.1
BVDSS
Limited
TA = 25 °C
Single Pulse
0.01
0.1
1
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
Si4840BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
25
5
Power Dissipation (W)
I D - Drain Current (A)
20
15
10
5
4
3
2
1
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
www.vishay.com
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Si4840BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 68 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69795.
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Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
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Document Number: 91000