Si9407BDY Datasheet

New Product
Si9407BDY
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
ID (A)a
RDS(on) (Ω)
- 60
0.120 at VGS = - 10 V
- 4.7
0.150 at VGS = - 4.5 V
- 4.2
Qg (Typ.)
8 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
SO-8
S
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
D
Ordering Information: Si9407BDY-T1-E3 (Lead (Pb)-free)
Si9407BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current (10 µs Width)
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Continuous Source-Drain Diode Current
Limit
- 60
± 20
- 4.7
- 3.8
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
- 3.2b, c
- 2.6b, c
- 20
- 4.2
A
- 2b, c
- 15
11
5
3.2
mJ
2.4b, c
1.5b, c
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
b, d
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Steady State
Symbol
RthJA
RthJF
Typical
42
19
Maximum
53
25
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69902
S09-0704-Rev. B, 27-Apr-09
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1
New Product
Si9407BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 60
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
mV/°C
4
-1
-3
V
± 100
nA
VDS = - 60 V, VGS = 0 V
-1
VDS = - 60 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≥ - 5 V, VGS = - 10 V
RDS(on)
V
- 50
- 20
µA
A
VGS = - 10 V, ID = - 3.2 A
0.100
0.120
VGS = - 4.5 V, ID = - 2.9 A
0.126
0.150
VDS = - 15 V, ID = - 3.2 A
8.5
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
600
VDS = - 30 V, VGS = 0 V, f = 1 MHz
70
VDS = - 30 V, VGS = - 10 V, ID = - 3.2 A
14.5
22
8
12
pF
50
VDS = - 30 V, VGS = - 4.5 V, ID = - 3.9 A
2.2
nC
3.7
f = 1 MHz
td(on)
VDD = - 30 V, RL = 11.5 Ω
ID ≅ - 2.6 A, VGEN = - 4.5 V, Rg = 1 Ω
tr
td(off)
tf
td(on)
VDD = - 30 V, RL = 11.5 Ω
ID ≅ - 2.6 A, VGEN = - 10 V, Rg = 1 Ω
tr
td(off)
tf
Ω
14
30
45
70
105
40
60
30
45
10
15
13
20
35
55
30
45
ns
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 4.2
- 20
IS = - 2 A, VGS = 0 V
IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
30
50
ns
35
60
nC
16
14
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69902
S09-0704-Rev. B, 27-Apr-09
New Product
Si9407BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
5
VGS = 10 V thru 5 V
4
I D - Drain Current (A)
I D - Drain Current (A)
20
15
VGS = 4 V
10
5
3
2
TC = 25 °C
1
TC = 150 °C
VGS = 3 V
0
0
1
2
3
4
TC = - 55 °C
0
0.0
5
0.5
VDS - Drain-to-Source Voltage (V)
1.0
2.5
3.0
3.5
4.0
Transfer Characteristics
0.30
1000
0.25
800
0.20
0.15
VGS = 4.5 V
VGS = 10 V
0.10
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
600
400
200
0.05
Coss
0
Crss
0
0
5
10
15
20
0
10
20
30
40
50
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
60
1.8
10
ID = 3.2 A
ID = 3.2 A
1.6
8
6
VDS = 30 V
4
2
VGS = 10 V
1.4
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.5
1.2
VGS = 4.5 V
1.0
0.8
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 69902
S09-0704-Rev. B, 27-Apr-09
12
15
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si9407BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.30
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 3.2 A
TJ = 150 °C
10
TJ = 25 °C
1
0.0
0.25
TA = 125 °C
0.20
0.15
TA = 25 °C
0.10
0.05
0.2
0.4
0.6
0.8
1.0
1.2
2
4
VSD - Source-to-Drain Voltage (V)
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
0.6
25
0.4
ID = 250 µA
20
0.2
Power (W)
VGS(th) Variance (V)
6
0
15
10
- 0.2
- 0.4
- 50
5
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I D - Drain Current (A)
10
Limited by RDS(on)*
100 µs
1 ms
1
10 ms
100 ms
0.1
1s
10 s
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 69902
S09-0704-Rev. B, 27-Apr-09
New Product
Si9407BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
6
4
Power Dissipation (W)
I D - Drain Current (A)
5
4
3
2
3
2
1
1
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69902
S09-0704-Rev. B, 27-Apr-09
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New Product
Si9407BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 75 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
t1
t2
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69902.
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Document Number: 69902
S09-0704-Rev. B, 27-Apr-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000