UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 12N90 is universally applied in high efficiency switch mode power supply. FEATURES * RDS(on) < 1.1Ω @ VGS=10V, ID=6A * High switching speed * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 12N90L-TC3-T 12N90G-TC3-T TO-230 12N90L-TF1-T 12N90G-TF1-T TO-220F1 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R5020-593. E 12N90 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 V Continuous (TC=25°C) ID 12 A Drain Current Pulsed (Note 2) IDM 48 A Avalanche Current (Note 2) IAR 12 A Single Pulsed Avalanche Energy (Note 3) EAS 800 mJ TO-220F1 51 W Power Dissipation PD TO-230 225 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=12mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient TO-220F1 Junction to Case TO-230 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 2.43 0.56 UNIT °C/W °C/W °C/W 2 of 6 QW-R5020-593. E 12N90 Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA, Referenced to 25°C VDS=900V, VGS=0V Drain-Source Leakage Current IDSS VDS=720V, TC=125°C Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Rise Time tR VGS=10V, VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF Total Gate Charge QG VGS=10V, VDD=50V, Gate to Source Charge QGS ID=1.3A, IG=100μA (Note 1, 2) Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=12A, VGS=0V Body Diode Reverse Recovery Time trr VGS=0V, IS=12A, dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 900 V V/°C 1.0 10 100 100 -100 3.0 µA nA nA 5.0 0.95 1.1 V Ω 1800 190 20 pF pF pF 120 200 335 240 59 14 20 ns ns ns ns nC nC nC 12 48 1.4 1000 17.0 A A V ns µC 3 of 6 QW-R5020-593. E 12N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤1μs Duty Factor≤0.1% Switching Test Circuit 12V tF Switching Waveforms Same Type as D.U.T. 50kΩ 0.2μF tD(OFF) tR QG 10V 0.3μF QGS VDS QGD VGS DUT 3mA VGS Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R5020-593. E 12N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R5020-593. E 12N90 TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Power MOSFET 200 150 100 50 200 150 100 50 0 0 0 0.8 2.4 3.2 1.6 4.0 4.8 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Drain Current, ID (A) 0 200 600 800 1000 400 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R5020-593. E