Datasheet

UNISONIC TECHNOLOGIES CO., LTD
12N90
Power MOSFET
12A, 900V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 12N90 is an N-channel enhancement mode power
MOSFET useing UTC’s advanced technology to provide customers with
planar stripe and DMOS technology. This technology is specialized in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the avalanche
and commutation mode.
The UTC 12N90 is universally applied in high efficiency switch mode
power supply.

FEATURES
* RDS(on) < 1.1Ω @ VGS=10V, ID=6A
* High switching speed
* 100% avalanche tested

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
12N90L-TC3-T
12N90G-TC3-T
TO-230
12N90L-TF1-T
12N90G-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
MARKING
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
900
V
Gate-Source Voltage
VGSS
±30
V
Continuous (TC=25°C)
ID
12
A
Drain Current
Pulsed (Note 2)
IDM
48
A
Avalanche Current (Note 2)
IAR
12
A
Single Pulsed Avalanche Energy (Note 3)
EAS
800
mJ
TO-220F1
51
W
Power Dissipation
PD
TO-230
225
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=12mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F1
Junction to Case
TO-230
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
62.5
2.43
0.56
UNIT
°C/W
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA, Referenced to 25°C
VDS=900V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=720V, TC=125°C
Forward
VGS=+30V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=6A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VGS=10V, VDD=30V, ID=0.5A,
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VGS=10V, VDD=50V,
Gate to Source Charge
QGS
ID=1.3A, IG=100μA (Note 1, 2)
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=12A, VGS=0V
Body Diode Reverse Recovery Time
trr
VGS=0V, IS=12A,
dIF/dt=100A/µs (Note 1)
Body Diode Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
900
V
V/°C
1.0
10
100
100
-100
3.0
µA
nA
nA
5.0
0.95 1.1
V
Ω
1800
190
20
pF
pF
pF
120
200
335
240
59
14
20
ns
ns
ns
ns
nC
nC
nC
12
48
1.4
1000
17.0
A
A
V
ns
µC
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TEST CIRCUITS AND WAVEFORMS
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
tD(ON)
Pulse Width≤1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
tF
Switching Waveforms
Same Type
as D.U.T.
50kΩ
0.2μF
tD(OFF)
tR
QG
10V
0.3μF
QGS
VDS
QGD
VGS
DUT
3mA
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)

Power MOSFET
200
150
100
50
200
150
100
50
0
0
0
0.8
2.4 3.2
1.6
4.0 4.8
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Drain Current, ID (A)
0
200
600
800 1000
400
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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