Data Sheet

HiPerFETTM
Power MOSFETs
IXFH/IXFM 10 N90
IXFH/IXFM 12 N90
IXFH/IXFT 13 N90
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on)
900 V
900 V
900 V
10 A
12 A
13 A
1.1 Ω
0.9 Ω
0.8 Ω
trr ≤ 250 ns
TO-247 AD (IXFH)
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
900
900
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
IDM
TC = 25°C,
pulse width limited by TJM
IAR
TC = 25°C
10
12
13
40
48
52
10
12
13
A
A
A
A
A
A
A
A
A
EAR
TC = 25°C
30
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
Maximum Ratings
10N90
12N90
13N90
10N90
12N90
13N90
10N90
12N90
13N90
TJ
TJM
Tstg
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
VDSS
VGS(th)
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
900
2.0
TJ = 25°C
TJ = 125°C
10N90
12N90
13N90
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2003 IXYS All rights reserved
TO-204 AA (IXFM)
D
4.5
V
V
±100
nA
25
1
µA
mA
1.1
0.9
0.8
Ω
Ω
Ω
G
TO-268 (IXFT)
G
E
TC = 25°C
TL
(TAB)
G = Gate,
S = Source,
C (TAB)
D = Drain,
TAB = Drain
Features
z
International standard packages
z
Low RDS (on) HDMOSTM process
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
Fast intrinsic Rectifier
Applications
z
DC-DC converters
z
Synchronous rectification
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
z
Temperature and lighting controls
z
Low voltage relays
Advantages
z
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
z
Space savings
z
High power density
DS91530I(01/03)
IXFH 10N90
IXFM 10N90
Symbol
Test Conditions
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
IXFH 12N90
IXFM 12N90
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
6
12
S
4200
pF
IXFH 13N90
IXFT 13N90
TO-247 AD (IXFH) Outline
1
Ciss
Coss
315
pF
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
90
pF
td(on)
18
50
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
12
50
ns
td(off)
RG = 2 Ω (External)
51
100
ns
18
50
ns
123 155
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
27
45
nC
49
80
nC
0.42
RthJC
RthCK
(IXFH/IXFM)
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
0.25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
10N90
12N90
13N90
10
12
13
A
A
A
10N90
12N90
13N90
40
48
52
A
A
A
1.5
V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
QRM
IF = IS
-di/dt = 100 A/µs,
VR = 100 V
IRM
K/W
K/W
TJ = 25°C
TJ = 125°C
2
3
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
2.2
2.6
A2
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-204 AA (IXFM) Outline
250 n s
400 n s
TJ = 25°C
TJ = 125°C
1
2
µC
µC
TJ = 25°C
TJ = 125°C
10
15
A
A
TO-268 (IXFT) Outline
Pins
1 - Gate
2 - Source
Case - Drain
Dim.
Millimeter
Min.
Max.
A
6.4
11.4
A1
3.42
∅b
.97
1.09
∅D
22.22
e
10.67 11.17
e1
5.21
5.71
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
L
∅p
∅p1
q
R
R1
s
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675
7.93
3.84
4.19
3.84
4.19
30.15 BSC
13.33
4.77
16.64 17.14
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXFH 10N90
IXFM 10N90
IXFH 12N90
IXFM 12N90
Fig. 1. Output Characteristics
20
Fig. 2. Input Admittance
TJ = 25°C
18
20
VGS = 10V
18
7V
16
6V
14
ID - Amperes
ID - Amperes
16
12
10
8
6
5V
14
12
TJ = 25°C
10
8
6
4
4
2
2
0
0
0
5
10
15
20
0
1
2
3
VDS - Volts
1.5
2.50
TJ = 25°C
5
6
7
8
9
10
Fig. 4. Temperature Dependence
of Drain to Source Resistance
2.25
RDS(on) - Normalized
1.4
RDS(on) - Normalized
4
VGS - Volts
Fig. 3. RDS(on) vs. Drain Current
1.3
1.2
VGS = 10V
1.1
VGS = 15V
1.0
2.00
1.75
1.50
ID = 6A
1.25
1.00
0.75
0.9
0
5
10
15
20
0.50
-50
25
-25
0
ID - Amperes
50
75
100 125 150
Fig. 6. Temperature Dependence of
Breakdown and Threshold Voltage
1.2
20
VGS(th)
18
BVDSS
1.1
14
BV/VG(th) - Normalized
16
12N90
12
10
10N90
8
6
4
1.0
0.9
0.8
0.7
0.6
2
0
-50
25
TJ - Degrees C
Fig. 5. Drain Current vs.
Case Temperature
ID - Amperes
IXFH 13N90
IXFT 13N90
-25
0
25
50
75
TC - Degrees C
© 2003 IXYS All rights reserved
100 125 150
0.5
-50
-25
0
25
50
75
TJ - Degrees C
100 125 150
IXFH 10N90
IXFM 10N90
IXFH 12N90
IXFM 12N90
IXFH 13N90
IXFT 13N90
Fig.7. Gate Charge Characteristic Curve
10
VDS = 450V
ID = 13A
IG = 10mA
VGE - Volts
8
6
4
2
0
0
25
50
75
100
125
150
Gate Charge - nCoulombs
Fig.8. Capacitance Curves
4500
18
Ciss
16
3500
14
3000
ID - Amperes
Capacitance - pF
4000
Fig.9. Source Current vs. Source
to Drain Voltage
f = 1 MHz
VDS = 25V
2500
2000
1500
1000
0
5
10
8
TJ = 125°C
6
TJ = 25°C
2
Crss
0
10
4
Coss
500
12
15
20
0
0.0
25
0.2
VCE - Volts
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Fig.10. Transient Thermal Impedance
Thermal Response - K/W
1
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1