HiPerFETTM Power MOSFETs IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH/IXFT 13 N90 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) 900 V 900 V 900 V 10 A 12 A 13 A 1.1 Ω 0.9 Ω 0.8 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 900 900 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 10 12 13 40 48 52 10 12 13 A A A A A A A A A EAR TC = 25°C 30 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD Maximum Ratings 10N90 12N90 13N90 10N90 12N90 13N90 10N90 12N90 13N90 TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Symbol Test Conditions VDSS VGS(th) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 TJ = 25°C TJ = 125°C 10N90 12N90 13N90 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved TO-204 AA (IXFM) D 4.5 V V ±100 nA 25 1 µA mA 1.1 0.9 0.8 Ω Ω Ω G TO-268 (IXFT) G E TC = 25°C TL (TAB) G = Gate, S = Source, C (TAB) D = Drain, TAB = Drain Features z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier Applications z DC-DC converters z Synchronous rectification z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Temperature and lighting controls z Low voltage relays Advantages z Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) z Space savings z High power density DS91530I(01/03) IXFH 10N90 IXFM 10N90 Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25, pulse test IXFH 12N90 IXFM 12N90 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 6 12 S 4200 pF IXFH 13N90 IXFT 13N90 TO-247 AD (IXFH) Outline 1 Ciss Coss 315 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 90 pF td(on) 18 50 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 12 50 ns td(off) RG = 2 Ω (External) 51 100 ns 18 50 ns 123 155 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 27 45 nC 49 80 nC 0.42 RthJC RthCK (IXFH/IXFM) Source-Drain Diode Symbol Test Conditions IS VGS = 0 V 0.25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 10N90 12N90 13N90 10 12 13 A A A 10N90 12N90 13N90 40 48 52 A A A 1.5 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr QRM IF = IS -di/dt = 100 A/µs, VR = 100 V IRM K/W K/W TJ = 25°C TJ = 125°C 2 3 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-204 AA (IXFM) Outline 250 n s 400 n s TJ = 25°C TJ = 125°C 1 2 µC µC TJ = 25°C TJ = 125°C 10 15 A A TO-268 (IXFT) Outline Pins 1 - Gate 2 - Source Case - Drain Dim. Millimeter Min. Max. A 6.4 11.4 A1 3.42 ∅b .97 1.09 ∅D 22.22 e 10.67 11.17 e1 5.21 5.71 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 L ∅p ∅p1 q R R1 s .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 7.93 3.84 4.19 3.84 4.19 30.15 BSC 13.33 4.77 16.64 17.14 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFH 10N90 IXFM 10N90 IXFH 12N90 IXFM 12N90 Fig. 1. Output Characteristics 20 Fig. 2. Input Admittance TJ = 25°C 18 20 VGS = 10V 18 7V 16 6V 14 ID - Amperes ID - Amperes 16 12 10 8 6 5V 14 12 TJ = 25°C 10 8 6 4 4 2 2 0 0 0 5 10 15 20 0 1 2 3 VDS - Volts 1.5 2.50 TJ = 25°C 5 6 7 8 9 10 Fig. 4. Temperature Dependence of Drain to Source Resistance 2.25 RDS(on) - Normalized 1.4 RDS(on) - Normalized 4 VGS - Volts Fig. 3. RDS(on) vs. Drain Current 1.3 1.2 VGS = 10V 1.1 VGS = 15V 1.0 2.00 1.75 1.50 ID = 6A 1.25 1.00 0.75 0.9 0 5 10 15 20 0.50 -50 25 -25 0 ID - Amperes 50 75 100 125 150 Fig. 6. Temperature Dependence of Breakdown and Threshold Voltage 1.2 20 VGS(th) 18 BVDSS 1.1 14 BV/VG(th) - Normalized 16 12N90 12 10 10N90 8 6 4 1.0 0.9 0.8 0.7 0.6 2 0 -50 25 TJ - Degrees C Fig. 5. Drain Current vs. Case Temperature ID - Amperes IXFH 13N90 IXFT 13N90 -25 0 25 50 75 TC - Degrees C © 2003 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 TJ - Degrees C 100 125 150 IXFH 10N90 IXFM 10N90 IXFH 12N90 IXFM 12N90 IXFH 13N90 IXFT 13N90 Fig.7. Gate Charge Characteristic Curve 10 VDS = 450V ID = 13A IG = 10mA VGE - Volts 8 6 4 2 0 0 25 50 75 100 125 150 Gate Charge - nCoulombs Fig.8. Capacitance Curves 4500 18 Ciss 16 3500 14 3000 ID - Amperes Capacitance - pF 4000 Fig.9. Source Current vs. Source to Drain Voltage f = 1 MHz VDS = 25V 2500 2000 1500 1000 0 5 10 8 TJ = 125°C 6 TJ = 25°C 2 Crss 0 10 4 Coss 500 12 15 20 0 0.0 25 0.2 VCE - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.10. Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1