Drives 600V/650V Silicon Power Diodes Selection Guide Highest Efficiency and Price Performance www.infineon.com/rapiddiodes Silicon Power Diodes Selection Guide Rapid 1 and Rapid 2 Diode Families The Rapid Diode family complements Infineon’s existing high power 600V/650V diodes by filling the gap between SiC diodes and previously released emitter-controlled diodes. They represent a perfect cost/performance balance and target high efficiency applications switching between 18kHz and 100kHz. Rapid 1 and Rapid 2 are optimized to have excellent compatibility with CoolMOS™ and high speed IGBT (Insulated Gate Bipolar Transistor) such as the TRENCHSTOP™ 5 and HighSpeed 3. Applications The Rapid 1 diode family 1.35V temperature-stable forward voltage (VF) Lowest peak reverse recovery current (Irrm) Reverse recovery time (trr) < 100ns High Softness factor Designed for applications switching between 18kHz and 40kHz Air Conditioners UPS Welding Machines Server Telecom The Rapid 2 diode family Lowest reverse recovery charge (Qrr): VF ratio for BIC performance Lowest Irrm trr < 50ns High Softness factor Designed for applications switching between 40kHz and 100kHz PC Power (>90W) Lighting Emitter Controlled Diodes Battery charger 0Hz RAPID 1 RAPID 2 18kHz 40kHz SiC 100kHz>100kHz Key Parameters - VF, Irrm, trr, S-factor trr IF IF ta 10% Irrm 0 Irrm t 0 trr Diode forward voltage, VF Reverse Recovery time, trr Defines the diode conduction losses Defined by diode Qrr and Irrm Rapid diode VF is the lowest and temperature stable →Customer value: Up to 0.8% higher efficiency at 60kHz than the best competitor hyperfast Si diode t ta Peak reverse recovery current, Irrm tb Soft recovery diode Irrm tb „Snappy“ recovery diode Boost power switch turn-on peak current losses →Customer value: Rapid diode has the lowest Irrm that provides lower power switch losses (Eon) Rapid Diode technology has the lowest trr temperature dependency →Customer value: Easy design and reliability due to stable device performance over the wide operating temperature range from 25°C to 125°C Softness (S-factor) = tb / ta Defines overvoltage stress on the diode and EMI requirements Rapid diode has a soft recovery, tb > ta →Customer value: Lower system cost because snubber circuit is not required plus lower EMI filtering Silicon Power Diodes Selection Tree Frequency Range* 0-18kHz Emiter Controlled Diode 18kHz - 40kHz Rapid 1 Diode 40kHz -100kHz Rapid 2 Diode 1200V 650V 650V IDpccE120 IDpccE65D1 IDpccC65D1 IDpccE65D2 IDpccC65D2 Aircon UPS Battery Charger PC Power Lighting Server Telecom UPS Aircon Welding PC Power Battery Charger 100kHz* SiC Diode Voltage Range 600V 600V, 650V, 1200V Part Number IDpccE60 Application UPS Welding Drives Home Appliance Battery Charger Drives Rapid Diode Portfolio TO-220-2 Emitter Control Diode Portfolio TO-220-2 FP TO-220-3 TO-247-3 IDP08E65D1 IDP15E65D1 IDP30E65D1 IDP08E65D2 IDP15E65D2 IDP20E65D2 IDP30E65D2 IDP40E65D2 IDV20E65D1 IDV08E65D2 IDV15E65D2 IDV30E65D2 IDW30E65D1 IDW40E65D1 IDP20C65D2 IDP30C65D2 * For switching frequencies > 100kHz please visit: www.infineon.com/sic IDW15E65D2 IDW40E65D2 IDW30C65D1 IDW60C65D1 IDW75D65D1 IDW80C65D1 IDW20C65D2 IDW30C65D2 TO-252 DPAK TO-263 D2PAK TO-247-3 IDB15E60 IDB30E60 IDW30E60 Continuous current IC TC = 100°C [A] 600V 8 9 15 20 30 40 60 75 80 8 15 20 30 40 TO-220-2 1200V Rapid 2 650V Rapid 1 650V Continuous current IC TC = 100°C [A] TO-247-3 Common Cathode 6 9 15 30 45 50 75 100 4 9 12 18 20 30 IDP15E60 IDP30E60 IDP45E60 IDD06E60 IDD09E60 IDD15E60 IDW50E60 IDW75E60 IDW100E60 IDP04E120 IDP09E120 IDP12E120 IDP18E120 IDP30E120 IDB30E120 Silicon PowerSignal Diode Products Selection Guide Small Common Silicon Power Diodes Applications and Topologies VF - Qrr Trade-off, Rapid 1 diF/dt = 1000A/us, Rapid 2 diF/dt = 300A/us 97.4 98.0 Comp I 97.2 97.8 Comp M 97.0 97.6 400 300 96.4 96.2 96.0 Comp F 95.8 IDP08E65D2 2.2 2.3 0 100 VF [V] 200 300 Boost PFC IGBT/CoolMOS™ Rapid 2 is Qrr optimized for lower switching losses 500 full load against competitors 0 200 400 600 800 1000 1200 1400 1600 Output Power [W] 400V SiC diode is the choice for high efficiency Rapid 2 is the choice for cost-performance Rapid 1 is the choice for cost-performance excellence at light load efficiency 3 Level Inverter Rapid Diode Rapid Diode Rapid Diode Rapid Diode Rapid Diode VIN 400V IGBT/CoolMOS™ IGBT/CoolMOS™ 400V IGBT/CoolMOS™ IGBT/CoolMOS™ Rapid Diode 85-285 VAC IGBT/CoolMOS™ AC Rapid Diode IGBT/CoolMOS™ 96.2 Full Bridge Rapid Diode Order Number: B114-I0005-V1-7600-AP-EC-P-DB2014-0018 Common Cathode Date: 09/2014 Rapid Diode Rapid Diode Common Cathode Rapid Diode Rapid Diode Rapid Diode IGBT/CoolMOS™ + VIN IGBT / CoolMOS™ IGBT VDC IGBT VAC + Rapid Diode IGBT/CoolMOS™ Rapid Diode de apid Diode All rights reserved. © 2014 Infineon Technologies AG IGBT Rapid Diode 800 AC Interleaved PFC 400V 700 400V Rapid 2 best-in-class performance from light load up to 90% 85-285 VAC Common Cathode Rapid Diode Rapid Diode 85-285 VAC 600 Output Power [W] Rapid Diode Rapid 1 is VF optimized for lower conduction losses 400 Rapid Diode 2.1 IGBT/CoolMOS™ 2.0 Rapid Diode 1.9 Rapid Diode 1.8 Rapid Diode 1.7 IGBT 1.6 Rapid Diode 1.5 IGBT 1.4 Rapid 2 SiC 96.4 95.6 IGBT/CoolMOS™ 100 97.0 96.6 IGBT/CoolMOS™ Comp S 97.2 96.8 IDP08E65D2 Comp. S Comp. F IGBT/CoolMOS™ 200 0 1.3 96.6 97.4 Rapid Diode 500 96.8 IGBT/CoolMOS™ 600 Rapid Diode Efficiency [%] 700 Efficiency [%] 98.2 IDW30E65D1 800 Qrr [nC] 97.6 Rapid Diode 900 PFC Efficiency @ 70kHz – Vin = 230V PFC Efficiency @ 60kHz – Vin = 230V 1000