650 V R api d Di ode f o r I nd u str ia l Appli cat io ns Application Note About this document Scope and purpose This document introduces the Rapid Diodes, high voltage hyperfast silicon diodes from Infineon. Based on ultra-thin wafer technology, two families of Rapid Diodes are released to cover different target application requirements. This application note is designed to show how the Rapid Diode improves existing system solutions in terms of system efficiency. Intended audience Design engineers who want to improve their system for reliability and efficiency Table of Contents 1 1.1 1.2 Description of Technology and Product Family............................................................... 2 VF - Qrr Rapid Diode Trade-off .............................................................................................................. 2 Relative Variation of Switching Parameters as a Function of Temperature..................................... 3 2 2.1 2.2 2.3 2.3.1 2.3.2 Application of Rapid Diodes ......................................................................................... 4 Rapid 1 Diode Static and Dynamic Performance ............................................................................... 5 Maximum Power Dissipation .............................................................................................................. 6 Rapid 2 Diode PFC Efficiency Tests..................................................................................................... 7 Diode Reverse Recovery and PFC Efficiency Result ..................................................................... 7 Rapid 2 Diodes Electrical Parameter Stability ............................................................................. 8 3 Portfolio .................................................................................................................... 9 4 Summary ................................................................................................................. 10 5 References ............................................................................................................... 11 6 Revision History........................................................................................................ 12 1 Revision 2.0, 2014-07-17 650V Rapid Diode for Industrial Applications Description of Technology and Product Family 1 Description of Technology and Product Family Rapid Diodes are based on ultrathin wafer technology, where wafer thickness and doping profile are optimized to achieve: Very low and temperature stable forward voltage (VF) Low reverse recovery charge (Qrr) Low peak reverse recovery current (Irrm) Soft reverse recovery Two families are available. Rapid 1 Diode is optimized to have the lowest VF while Rapid 2 Diode is designed for low Qrr and Irrm. Both families are rated at a blocking voltage of 650V. 1.1 VF - Qrr Rapid Diode Trade-off Rapid Diodes are P-i-N diodes that are categorized via a trade-off curve of VF versus Qrr. This trade-off is determined by the plasma of excess charge carriers injected into the drift region of the diode. For Rapid 1 Diode, plasma concentration is increased thus the forward voltage VF in conduction mode is reduced. Consequently, more charge carriers are present within the device during forward conduction. Once reverse voltage is applied to the device, this excess charge has to be removed first before a voltage can be blocked. Hence a trade-off exists between VF and Qrr as displayed in Figure 1. Figure 1 VF - Qrr Trade-off for the 8A Rapid 1 Diode with diF/dt = 200A/ s and 8A Rapid 2 Diode with diF/dt = 300A/s at 125°C Tj Application Note 2 Revision 2.0, 2014-07-17 650V Rapid Diode for Industrial Applications Description of Technology and Product Family 1.2 Relative Variation of Switching Parameters as a Function of Temperature Rapid technology has temperature stable electrical parameters due to relatively light life time killing on the float zone starting material. Compared to a diode with epitaxial starting material, Table 1 indicates the low deviation of Rapid 2 Diode’s dynamic parameters at varying temperature conditions. Table 1 Relative Variation of Switching Parameters as a Function of Temperature Device Rapid 2 Diode Compare Product Application Note Relative Value at TC = 125°C trr Qrr Irrm = 0.9 x trr _25°C = 2.2 x Qrr _25°C = 1.5 x Irrm _25°C n.a. = 4.0 x Qrr _ 25°C = 2.5 x Irrm _25°C 3 Revision 2.0, 2014-07-17 650V Rapid Diode for Industrial Applications Application of Rapid Diodes 2 Application of Rapid Diodes The major application Rapid Diodes are used in is their utilization as boost diode in power factor correction circuits (PFC). Depending on its application requirements, PFC can be operated at a low switching frequency of 18kHz up to a high switching frequency of >100kHz. Devices with low conduction losses are essential on applications with 18kHz to 40kHz PFC switching frequency, thus Rapid 1 Diode is preferred. To meet high power density and efficiency requirements typical to server and telecom applications, a PFC operating at a high switching frequency will require smaller magnetic components. 60kHz to 100kHz switching frequency is typical for a silicon diode. To meet high efficiency requirements, a diode with low Q rr and Irrm is preferred to minimize the turn-on losses in the PFC’s switch. The Rapid 2 Diode is a perfect fit in these applications. Table 2 lists the target applications for the Rapid Diodes. Table 2 Device Rapid 1 Diode Rapid 2 Diode Rapid Diode Target Applications Target Application IF [A] Home Appliance UPS Welding 8 - - - 15 - - - - - 20 IDV20E65D1 PC Power/ LED/LCD TV Server Telecom IDP08E65D1 - - IDP15E65D1 - - - - - 30 IDW30E65D1 IDP30E65D1 - - - - 40 - IDW40E65D1 - - - - 8 - IDP08E65D2 IDV08E65D2 IDP08E65D2 IDV08E65D2 15 - IDP15E65D2 IDV15E65D2 IDW15E65D2 IDP15E65D2 IDV15E65D2 IDW15E65D2 20 - IDP20E65D2 IDP20E65D2 IDP30E65D2 IDV30E65D2 IDP30E65D2 IDV30E65D2 IDV30E65D2 30 40 - - - IDP08E65D2 IDV08E65D2 - IDP08E65D2 IDV08E65D2 IDP15E65D2 IDV15E65D2 IDP15E65D2 IDV15E65D2 IDP20C65D2 IDP20E65D2 IDP20C65D2 - - IDP30E65D2 IDV30E65D2 IDP30C65D2 - - IDP40E65D2 IDW40E65D2 In the following sections, Rapid Diode static and dynamic characteristics will be compared to other diode technologies commonly found in the market. Rapid 1 Diode is focused more on static performance while Rapid 2 Diode emphasizes on the enhanced switching characteristics. The final results reveal an efficiency improvement over the existing system solution. Application Note 4 Revision 2.0, 2014-07-17 650V Rapid Diode for Industrial Applications Application of Rapid Diodes 2.1 Rapid 1 Diode Static and Dynamic Performance For a system to run at high efficiency, system power losses have to be minimized. In applications that switch a diode at less than 20kHz, the conduction losses Pcond usually are the major source of diode losses. This contribution can be mathematically expressed to be: [1] 𝑃𝑐𝑜𝑛𝑑 = 𝑉𝐹 ∗ 𝐼𝐹 In this IF is the current conducted by the diode. Therefore, a diode with lower VF will have lower conduction losses. Figure 2 depicts the forward voltage characteristic of a Rapid 1 Diode rated 30A, compared to the same current rated low forward voltage diodes available to the market. At nominal current of 30A, Rapid 1 Diode forward voltage is measured to be 1.39 V at Tj=25 °C. Comparing device A, a measured forward voltage of 1.74V corresponds to a 25% higher value compared to Rapid Diode. At Tj=100°C, the forward voltage of the Rapid 1 Diode increased by 1.4% while the device A compared to changes by 12 %, device B even changes by almost 18%. This demonstrates the lower dependency of the forward voltage with varying temperature. Figure 2 Comparison of forward voltage between Rapid 1 Diode and compare products A and B at 25°C to 100°C Case Temperature Application Note 5 Revision 2.0, 2014-07-17 650V Rapid Diode for Industrial Applications Application of Rapid Diodes To test the switching performance of these three diodes, a double pulse test fixture is used. The diodes peak reverse recovery current, Qrr and the power switches turn-on losses Eon are measured during the second turn-on event. Measurement results of these three diodes are summarized in Table 3, proving that a low peak reverse recovery current diode reduces the IGBT’s turn-on losses even at a high Qrr. Table 3 Measurement of Irrm, Qrr and IGBT’s Eon at ID=30 A, Tj=100°C; VF measured in previous section. Device Rapid 1 Diode Compare Product A Compare Product B 2.2 VF [V] 1.406 1.550 1.542 Irrm [A] 14.99 19.22 22.74 Qrr [nC] 861.2 712.7 772.3 Eon,switch [mJ] 1.019 1.016 1.019 Maximum Power Dissipation The maximum power dissipation of a diode is limited by its thermal situation. As the diode dissipates more power, the junction temperature rises. Due to the diode’s package thickness, the thermal resistance from junction to case Rth(j-c) causes a temperature gradient between the junction and the case of the device. Exceeding the maximum power dissipation at a given case temperature will result in interruption of current flow due to disconnecting bond wires. Figure 3 shows a typical graph of diode forward current as a function of case temperature for IDV20E65D1, a 20 A TO-220 full-pack diode popular in PFC for an inverter air-con. Figure 3 Diode forward current as a function of case temperature (Tj≤175°C) for IDV20E65D1 Application Note 6 Revision 2.0, 2014-07-17 650V Rapid Diode for Industrial Applications Application of Rapid Diodes 2.3 Rapid 2 Diode PFC Efficiency Tests To confirm that Rapid Diodes improve system efficiency compared to existing solutions, tests were conducted on a single channel PFC test board. Figure 4 (a) illustrates the schematic of a single channel PFC. For applications that require lower input/output harmonic current and lower EMI, an interleaved PFC using a boost diode in a common cathode configuration can be used instead, the according schematic is depicted in Figure 4(b). Figure 4 a) Single Channel and Interleaved PFC Circuits b) 2.3.1 Diode Reverse Recovery and PFC Efficiency Result Using a hard switched continuous conduction mode boost PFC as a test platform, the waveforms in Figure 5 show an 8A/650V rated Rapid 2 boost diode reverse recovery event compared to some 8A/600V rated compare products C and D with low Qrr. Initially, the boost diode is conducting 5.6A forward current. After 20ns, the power switch is turned on thus the current flowing to the diode starts to be diverted to the power switch. After 26ns, all boost diode forward current has been commutated to the power switch. Then the boost diode undergoes reverse current conduction at a rate of diF/dt = 2000 A/s and then peaks down to Irrm before the current returns back to zero. Figure 5 Comparison of Boost Diode Reverse Recovery between Rapid 2 Diode and compare products C and D Application Note 7 Revision 2.0, 2014-07-17 650V Rapid Diode for Industrial Applications Application of Rapid Diodes As seen in Figure 5, Rapid 2 Diode has the lowest peak reverse recovery current compared to compare products C and D. Soft recovery of Rapid 2 Diode is also visible where tb is longer than ta. The graphs in Figure 6 compare the PFC efficiency using different boost diode at 115VAC and 230VAC input voltage over the entire load range at 25°C ambient. Having a good compromise between VF and Qrr, Rapid 2 Diode achieves a higher efficiency from light to mid load while maintaining moderate efficiency at full load, compared to compare products C and D. Figure 6 PFC Efficiency vs. Output Power at 115VAC and 230VAC 2.3.2 Rapid 2 Diodes Electrical Parameter Stability As mentioned in section 1.2, Rapid Diode electrical parameters have a low dependency over temperature. The diode tends to have lower switching losses at increased junction temperature. In Table 4, electrical parameters of Rapid 2 Diodes are compared to compare products C and D. Table 4 Relative Variation of Switching Parameters as a Function of Temperature Device trr Rapid 2 Diodes Compare Product C Compare Product D Relative Value at TC = 125°C Qrr = 0.9 x trr _25°C n.a. = 2.1 x trr _25°C Irrm = 2.2 x Qrr _25°C = 1.5 x Irrm _25°C = 4.0 x Qrr _25°C = 2.5 x Irrm _25°C = 3.3 x Qrr _25°C = 1.5 x Irrm _25°C Note: All values are extracted from the datasheet. Conditions differ for different devices Application Note 8 Revision 2.0, 2014-07-17 650V Rapid Diode for Industrial Applications Portfolio 3 Portfolio Rapid Diode product naming includes the package type, the diode’s rated current, single or common cathode configuration, the voltage class divided by 10 and diode type "D1" for Rapid 1 Diode and "D2” for Rapid 2 Diode. Table 5 presents the portfolio of Rapid Diodes. Table 5 Portfolio of Rapid Diodes Device Rapid Diode 1 Rapid Diode 2 Application Note IF [A] 8 15 20 30 40 8 15 20 30 40 TO-220 real 2-leg TO-220 FullPAK real 2-leg IDP08E65D1 IDP15E65D1 IDV20E65D1 IDP30E65D1 IDP08E65D2 IDP15E65D2 IDP20E65D2 IDP30E65D2 IDP40E65D2 TO-220-3 Common Cathode IDW30E65D1 IDW40E65D1 IDV08E65D2 IDV15E65D2 IDV30E65D2 TO-247-3 IDW15E65D2 IDP20C65D2 IDP30C65D2 IDW40E65D2 9 Revision 2.0, 2014-07-17 650V Rapid Diode for Industrial Applications Summary 4 Summary With the Rapid Diodes, Infineon brings thin wafer technology expertise to offer outstanding performance. Rapid Diodes’ low forward voltage and peak reverse recovery current further increases PFC efficiency compared to existing solutions. Moreover, ruggedness of the device is higher by having a DC blocking voltage of 650V and soft recovery characteristics. Application Note 10 Revision 2.0, 2014-07-17 650V Rapid Diode for Industrial Applications References 5 References [1] “Fast IGBT and Diode technologies achieve Platinum Efficiency Standard in commercial SMPS applications”; Davide Chiola, Erich Griebl, APEC 2013 [2] Rapid Diodes datasheets. Available in internet: http://www.infineon.com/rapiddiodes Application Note 11 Revision 2.0, 2014-07-17 650V Rapid Diode for Industrial Applications Revision History 6 Revision History Major changes since the last revision Page or Reference Description of change Document Text content and layout Pages 4,7 and 9 Included common cathode devices Page 6 Included “Maximum Power Dissipation” description Application Note 12 Revision 2.0, 2014-07-17 Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 www.infineon.com Edition 2014-07-17 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? Email: [email protected] Document reference ifx000000000001 Legal Disclaimer THE INFORMATION GIVEN IN THIS APPLICATION NOTE (INCLUDING BUT NOT LIMITED TO CONTENTS OF REFERENCED WEBSITES) IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.