Infineon-Application Note Rapid 1 and Rapid 2 Diodes-AN-v01_00-EN

650 V R api d Di ode f o r I nd u str ia l
Appli cat io ns
Application Note
About this document
Scope and purpose
This document introduces the Rapid Diodes, high voltage hyperfast silicon diodes from Infineon. Based on
ultra-thin wafer technology, two families of Rapid Diodes are released to cover different target application
requirements. This application note is designed to show how the Rapid Diode improves existing system
solutions in terms of system efficiency.
Intended audience
Design engineers who want to improve their system for reliability and efficiency
Table of Contents
1
1.1
1.2
Description of Technology and Product Family............................................................... 2
VF - Qrr Rapid Diode Trade-off .............................................................................................................. 2
Relative Variation of Switching Parameters as a Function of Temperature..................................... 3
2
2.1
2.2
2.3
2.3.1
2.3.2
Application of Rapid Diodes ......................................................................................... 4
Rapid 1 Diode Static and Dynamic Performance ............................................................................... 5
Maximum Power Dissipation .............................................................................................................. 6
Rapid 2 Diode PFC Efficiency Tests..................................................................................................... 7
Diode Reverse Recovery and PFC Efficiency Result ..................................................................... 7
Rapid 2 Diodes Electrical Parameter Stability ............................................................................. 8
3
Portfolio .................................................................................................................... 9
4
Summary ................................................................................................................. 10
5
References ............................................................................................................... 11
6
Revision History........................................................................................................ 12
1
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650V Rapid Diode for Industrial Applications
Description of Technology and Product Family
1
Description of Technology and Product Family
Rapid Diodes are based on ultrathin wafer technology, where wafer thickness and doping profile are
optimized to achieve:

Very low and temperature stable forward voltage (VF)

Low reverse recovery charge (Qrr)

Low peak reverse recovery current (Irrm)

Soft reverse recovery
Two families are available. Rapid 1 Diode is optimized to have the lowest VF while Rapid 2 Diode is designed
for low Qrr and Irrm. Both families are rated at a blocking voltage of 650V.
1.1
VF - Qrr Rapid Diode Trade-off
Rapid Diodes are P-i-N diodes that are categorized via a trade-off curve of VF versus Qrr. This trade-off is
determined by the plasma of excess charge carriers injected into the drift region of the diode. For Rapid 1
Diode, plasma concentration is increased thus the forward voltage VF in conduction mode is reduced.
Consequently, more charge carriers are present within the device during forward conduction. Once reverse
voltage is applied to the device, this excess charge has to be removed first before a voltage can be blocked.
Hence a trade-off exists between VF and Qrr as displayed in Figure 1.
Figure 1
VF - Qrr Trade-off for the 8A Rapid 1 Diode with diF/dt = 200A/ s and 8A Rapid 2 Diode with
diF/dt = 300A/s at 125°C Tj
Application Note
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650V Rapid Diode for Industrial Applications
Description of Technology and Product Family
1.2
Relative Variation of Switching Parameters as a Function of
Temperature
Rapid technology has temperature stable electrical parameters due to relatively light life time killing on the
float zone starting material. Compared to a diode with epitaxial starting material, Table 1 indicates the low
deviation of Rapid 2 Diode’s dynamic parameters at varying temperature conditions.
Table 1
Relative Variation of Switching Parameters as a Function of Temperature
Device
Rapid 2 Diode
Compare Product
Application Note
Relative Value at TC = 125°C
trr
Qrr
Irrm
= 0.9 x trr _25°C
= 2.2 x Qrr _25°C
= 1.5 x Irrm _25°C
n.a.
= 4.0 x Qrr _ 25°C
= 2.5 x Irrm _25°C
3
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650V Rapid Diode for Industrial Applications
Application of Rapid Diodes
2
Application of Rapid Diodes
The major application Rapid Diodes are used in is their utilization as boost diode in power factor correction
circuits (PFC). Depending on its application requirements, PFC can be operated at a low switching frequency
of 18kHz up to a high switching frequency of >100kHz. Devices with low conduction losses are essential on
applications with 18kHz to 40kHz PFC switching frequency, thus Rapid 1 Diode is preferred.
To meet high power density and efficiency requirements typical to server and telecom applications, a PFC
operating at a high switching frequency will require smaller magnetic components. 60kHz to 100kHz
switching frequency is typical for a silicon diode. To meet high efficiency requirements, a diode with low Q rr
and Irrm is preferred to minimize the turn-on losses in the PFC’s switch. The Rapid 2 Diode is a perfect fit in
these applications. Table 2 lists the target applications for the Rapid Diodes.
Table 2
Device
Rapid 1
Diode
Rapid 2
Diode
Rapid Diode Target Applications
Target Application
IF
[A]
Home
Appliance
UPS
Welding
8
-
-
-
15
-
-
-
-
-
20 IDV20E65D1
PC Power/
LED/LCD TV
Server
Telecom
IDP08E65D1
-
-
IDP15E65D1
-
-
-
-
-
30 IDW30E65D1
IDP30E65D1
-
-
-
-
40
-
IDW40E65D1
-
-
-
-
8
-
IDP08E65D2
IDV08E65D2
IDP08E65D2
IDV08E65D2
15
-
IDP15E65D2
IDV15E65D2
IDW15E65D2
IDP15E65D2
IDV15E65D2
IDW15E65D2
20
-
IDP20E65D2
IDP20E65D2
IDP30E65D2
IDV30E65D2
IDP30E65D2
IDV30E65D2
IDV30E65D2
30
40
-
-
-
IDP08E65D2
IDV08E65D2
-
IDP08E65D2
IDV08E65D2
IDP15E65D2
IDV15E65D2
IDP15E65D2
IDV15E65D2
IDP20C65D2
IDP20E65D2
IDP20C65D2
-
-
IDP30E65D2
IDV30E65D2
IDP30C65D2
-
-
IDP40E65D2
IDW40E65D2
In the following sections, Rapid Diode static and dynamic characteristics will be compared to other diode
technologies commonly found in the market. Rapid 1 Diode is focused more on static performance while
Rapid 2 Diode emphasizes on the enhanced switching characteristics. The final results reveal an efficiency
improvement over the existing system solution.
Application Note
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650V Rapid Diode for Industrial Applications
Application of Rapid Diodes
2.1
Rapid 1 Diode Static and Dynamic Performance
For a system to run at high efficiency, system power losses have to be minimized. In applications that switch
a diode at less than 20kHz, the conduction losses Pcond usually are the major source of diode losses. This
contribution can be mathematically expressed to be:
[1]
𝑃𝑐𝑜𝑛𝑑 = 𝑉𝐹 ∗ 𝐼𝐹
In this IF is the current conducted by the diode. Therefore, a diode with lower VF will have lower conduction
losses.
Figure 2 depicts the forward voltage characteristic of a Rapid 1 Diode rated 30A, compared to the same
current rated low forward voltage diodes available to the market. At nominal current of 30A, Rapid 1 Diode
forward voltage is measured to be 1.39 V at Tj=25 °C. Comparing device A, a measured forward voltage of
1.74V corresponds to a 25% higher value compared to Rapid Diode.
At Tj=100°C, the forward voltage of the Rapid 1 Diode increased by 1.4% while the device A compared to
changes by 12 %, device B even changes by almost 18%. This demonstrates the lower dependency of the
forward voltage with varying temperature.
Figure 2
Comparison of forward voltage between Rapid 1 Diode and compare products A and B at
25°C to 100°C Case Temperature
Application Note
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650V Rapid Diode for Industrial Applications
Application of Rapid Diodes
To test the switching performance of these three diodes, a double pulse test fixture is used. The diodes peak
reverse recovery current, Qrr and the power switches turn-on losses Eon are measured during the second
turn-on event. Measurement results of these three diodes are summarized in Table 3, proving that a low
peak reverse recovery current diode reduces the IGBT’s turn-on losses even at a high Qrr.
Table 3
Measurement of Irrm, Qrr and IGBT’s Eon at ID=30 A, Tj=100°C; VF measured in previous
section.
Device
Rapid 1 Diode
Compare Product A
Compare Product B
2.2
VF
[V]
1.406
1.550
1.542
Irrm
[A]
14.99
19.22
22.74
Qrr
[nC]
861.2
712.7
772.3
Eon,switch
[mJ]
1.019
1.016
1.019
Maximum Power Dissipation
The maximum power dissipation of a diode is limited by its thermal situation. As the diode dissipates more
power, the junction temperature rises. Due to the diode’s package thickness, the thermal resistance from
junction to case Rth(j-c) causes a temperature gradient between the junction and the case of the device.
Exceeding the maximum power dissipation at a given case temperature will result in interruption of current
flow due to disconnecting bond wires. Figure 3 shows a typical graph of diode forward current as a function
of case temperature for IDV20E65D1, a 20 A TO-220 full-pack diode popular in PFC for an inverter air-con.
Figure 3
Diode forward current as a function of case temperature (Tj≤175°C) for IDV20E65D1
Application Note
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650V Rapid Diode for Industrial Applications
Application of Rapid Diodes
2.3
Rapid 2 Diode PFC Efficiency Tests
To confirm that Rapid Diodes improve system efficiency compared to existing solutions, tests were
conducted on a single channel PFC test board. Figure 4 (a) illustrates the schematic of a single channel PFC.
For applications that require lower input/output harmonic current and lower EMI, an interleaved PFC using
a boost diode in a common cathode configuration can be used instead, the according schematic is depicted
in Figure 4(b).
Figure 4
a)
Single Channel and Interleaved PFC Circuits
b)
2.3.1
Diode Reverse Recovery and PFC Efficiency Result
Using a hard switched continuous conduction mode boost PFC as a test platform, the waveforms in Figure 5
show an 8A/650V rated Rapid 2 boost diode reverse recovery event compared to some 8A/600V rated
compare products C and D with low Qrr. Initially, the boost diode is conducting 5.6A forward current. After
20ns, the power switch is turned on thus the current flowing to the diode starts to be diverted to the power
switch. After 26ns, all boost diode forward current has been commutated to the power switch. Then the
boost diode undergoes reverse current conduction at a rate of diF/dt = 2000 A/s and then peaks down to Irrm
before the current returns back to zero.
Figure 5
Comparison of Boost Diode Reverse Recovery between Rapid 2 Diode and compare
products C and D
Application Note
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650V Rapid Diode for Industrial Applications
Application of Rapid Diodes
As seen in Figure 5, Rapid 2 Diode has the lowest peak reverse recovery current compared to compare
products C and D. Soft recovery of Rapid 2 Diode is also visible where tb is longer than ta.
The graphs in Figure 6 compare the PFC efficiency using different boost diode at 115VAC and 230VAC input
voltage over the entire load range at 25°C ambient. Having a good compromise between VF and Qrr, Rapid 2
Diode achieves a higher efficiency from light to mid load while maintaining moderate efficiency at full load,
compared to compare products C and D.
Figure 6
PFC Efficiency vs. Output Power at 115VAC and 230VAC
2.3.2
Rapid 2 Diodes Electrical Parameter Stability
As mentioned in section 1.2, Rapid Diode electrical parameters have a low dependency over temperature.
The diode tends to have lower switching losses at increased junction temperature. In Table 4, electrical
parameters of Rapid 2 Diodes are compared to compare products C and D.
Table 4
Relative Variation of Switching Parameters as a Function of Temperature
Device
trr
Rapid 2 Diodes
Compare Product C
Compare Product D
Relative Value at TC = 125°C
Qrr
= 0.9 x trr _25°C
n.a.
= 2.1 x trr _25°C
Irrm
= 2.2 x Qrr _25°C
= 1.5 x Irrm _25°C
= 4.0 x Qrr _25°C
= 2.5 x Irrm _25°C
= 3.3 x Qrr _25°C
= 1.5 x Irrm _25°C
Note: All values are extracted from the datasheet. Conditions differ for different devices
Application Note
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650V Rapid Diode for Industrial Applications
Portfolio
3
Portfolio
Rapid Diode product naming includes the package type, the diode’s rated current, single or common
cathode configuration, the voltage class divided by 10 and diode type "D1" for Rapid 1 Diode and "D2” for
Rapid 2 Diode. Table 5 presents the portfolio of Rapid Diodes.
Table 5
Portfolio of Rapid Diodes
Device
Rapid Diode 1
Rapid Diode 2
Application Note
IF
[A]
8
15
20
30
40
8
15
20
30
40
TO-220 real 2-leg TO-220 FullPAK
real 2-leg
IDP08E65D1
IDP15E65D1
IDV20E65D1
IDP30E65D1
IDP08E65D2
IDP15E65D2
IDP20E65D2
IDP30E65D2
IDP40E65D2
TO-220-3 Common
Cathode
IDW30E65D1
IDW40E65D1
IDV08E65D2
IDV15E65D2
IDV30E65D2
TO-247-3
IDW15E65D2
IDP20C65D2
IDP30C65D2
IDW40E65D2
9
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650V Rapid Diode for Industrial Applications
Summary
4
Summary
With the Rapid Diodes, Infineon brings thin wafer technology expertise to offer outstanding performance.
Rapid Diodes’ low forward voltage and peak reverse recovery current further increases PFC efficiency
compared to existing solutions. Moreover, ruggedness of the device is higher by having a DC blocking
voltage of 650V and soft recovery characteristics.
Application Note
10
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650V Rapid Diode for Industrial Applications
References
5
References
[1] “Fast IGBT and Diode technologies achieve Platinum Efficiency Standard in commercial SMPS
applications”; Davide Chiola, Erich Griebl, APEC 2013
[2] Rapid Diodes datasheets. Available in internet: http://www.infineon.com/rapiddiodes
Application Note
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650V Rapid Diode for Industrial Applications
Revision History
6
Revision History
Major changes since the last revision
Page or Reference
Description of change
Document
Text content and layout
Pages 4,7 and 9
Included common cathode devices
Page 6
Included “Maximum Power Dissipation” description
Application Note
12
Revision 2.0, 2014-07-17
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