KSMT315P/BSP315P KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS RDSON -60V 0.8Ω ID -1.17A 1) Low gate charge. 2) Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOT-223 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -1.17 Continuous Drain Current-T=100℃ -0.94 Pulsed Drain Current2 — EAS Single Pulse Avalanche Energy3 24 PD Power Dissipation4 1.8 TJ, TSTG Operating and Storage Junction Temperature -55 to Range +150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMT315P/BSP315P KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance, Junction to Case1 — RƟJA Thermal Resistance ,Junction to Ambient1 — Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMT315P KSMT315P SOT-223 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -60 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — -0.1 -1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA — — — V VDS=10V,ID=6A — 0.8 1.4 VDS=2.5V,ID=5A — 0.5 0.8 VDS=5V,ID=12A — — — — 130 160 — 40 50 — 17 21 — 24 36 — 9 14 — 32 48 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time — 19 28 Qg Total Gate Charge — 0.7 1.1 Qgs Gate-Source Charge VGS=4.5V, VDS=20V, — 1.8 2.6 Gate-Drain “Miller” Charge ID=6A — 5.2 7.8 ns ns ns ns nC nC nC — — — V — 30. 5 46 ns — 36 54 nC Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMT315P/BSP315P KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted www.kersemi.com 3 KSMT315P/BSP315P KERSMI ELECTRONIC CO.,LTD. -60V www.kersemi.com P-channel MOSFET 4 KSMT315P/BSP315P KERSMI ELECTRONIC CO.,LTD. -60V www.kersemi.com P-channel MOSFET 5