OptiMOS™ and StrongIRFET™ combined portfolio 20 V–300 V N-channel Power MOSFETs www.infineon.com/powermosfet-20V-300V OptiMOS™ and StrongIRFET™ A powerful combination Infineon’s semiconductors are designed to bring more efficiency, power density and cost effectiveness. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. Benefits ››Expanded product portfolio 20 V–300 V ››Able to address a broad range of needs ››Best-in-class technology → OptiMOS™ Power MOSFETs 20 V-300 V - OptiMOS™ and StrongIRFET™ families Infineon’s highly innovative OptiMOS™ and StrongIRFET™ families consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). OptiMOS™ – optimized for high frequency and low RDS(on) applications StrongIRFET™ – optimized for low frequency and high rugged applications OptiMOS™ and StrongIRFET™ Family attributes overview OptiMOS™ Power MOSFETs provide excellent best-in-class performance. Features include ultra low RDS(on) as well as low charge for high switching frequency applications. StrongIRFET™ Power MOSFETs are designed for rugged industrial applications and are ideal for designs with a low switching frequency as well as those that require a high current carrying capability. OptiMOS™ family attributes Designed for high performance applications StrongIRFET™ family attributes Primarily aimed at replacing Trench Power MOSFETs Ideal for high switching frequency Ultra low RDS(on) Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2015 Infineon Technologies AG. All Rights Reserved. Order Number: B111-I0163-V1-7600-EU-EC-P Date: 08 / 2015 20 V–300 V portfolio Provide best-in-class and price/ performance products Designed for industrial applications Industry best figure of merit Ideal for low switching frequency High efficiency and power density Low RDS(on) Please note! THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE. WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED APPLICATION. WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR THE INFORMATION GIVEN HEREIN AT ANY TIME. Primarily aimed at replacing planar Power MOSFETs Provide value in traditional Trench MOSFET space High current carrying capability 3.0 Threshold voltage Logic Level also available Rugged Silicon Additional information For further information on technologies, our products, the application of our products, delivery terms and conditions and/or prices please contact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to technical requirements, our products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by us in a written document signed by authorized representatives of Infineon Technologies, our products may not be used in any life endangering applications, including but not limited to medical, nuclear, military, life critical or any other applications where a failure of the product or any consequences of the use thereof can result in personal injury. OptiMOS™ and StrongIRFET™ Product family positioning These graphs show the recommended technology for best fit standard components, price performance and differentiated products according to switching frequency. For low frequency applications, OptiMOS™ 5 is the best fit when best-in-class performance is required. However, StrongIRFET™ is recommended for 20 V to 75 V applications when best-inclass performance is not essential and cost is a more significant consideration. For best-in-class performance at voltages from 80 V to 150 V, OptiMOS™ 5 is recommended. If best-in-class is not essential and price/performance is more important, then OptiMOS™ 3 is the recommendation. Voltages above 150 V are available in OptiMOS™ 3. In addition, older Trench MOSFETs, shown here as HEXFET™, are an option for highly commoditized markets where cost is the main consideration. For high frequency applications, OptiMOS™ 5 is recommended for best-in-class and price/performance up to 150 V. OptiMOS™ 3 can be considered where high performance is less essential. As with low frequency applications, OptiMOS™ 3 is available for voltages above 150 V. Low frequency applications < 100 kHz Differentiated products Best-in-class OptiMOS™ 5 20 V–150 V OptiMOS™ 5 80 V–150 V Price performance StrongIRFET™ 20 V–75 V „Best fit“ standard components OptiMOS™ 3 200 V–300 V OptiMOS™ 3 80 V–150 V HEXFET™ 80 V–300 V 20 V 80 V Breakdown voltage 300 V High frequency applications > 100 kHz Differentiated products Best-in-class OptiMOS™ 5 20 V–150 V Price performance „Best fit“ standard components OptiMOS™ 5 20 V–150 V OptiMOS™ 3 200 V–300 V OptiMOS™ 3 20 V–150 V 20 V 80 V Breakdown voltage 300 V OptiMOS™ and StrongIRFET™ Combined portfolio Infineon’s OptiMOS™ portfolio, now complemented by StrongIRFET™ Power MOSFETs, creates a truly powerful combination. The joint portfolio, covering 20 V up to 300 V MOSFETs, can address a broad range of needs from low to high switching frequencies. The tables below provide a guidance overview for the recommended OptiMOS™ or StrongIRFET™ products for each major sub-application and voltage class. Drives SMPS Breakdown voltage Breakdown voltage 20–30 40 60 75–80 40 60 75–80 100 20–30 40 60 75–80 40 60 75–80 100 60 75–80 100 40 60 75–80 100 100 75–80 100 150 200 60 75–80 40 60 20–30 40 60 75–80 40 60 20–30 40 60 75–80 40 60 20–30 40 60 75–80 60 75–80 100 20–30 40 60 75–80 60 75–80 100 20–30 40 60 75–80 40 60 75–80 20–30 40 60 75–80 40 60 75–80 Inverters Breakdown voltage 60 75–80 100 75–80 100 75–80 100 20–30 40 60 75–80 100 20–30 40 60 75–80 100 150 150 150 60 75–80 100 20–30 40 60 75–80 100 20–30 40 60 75–80 100 40 60 OptiMOS™ Recommended BVDSS Available 40 60 StrongIRFET™ Recommended BVDSS Available 150 200 250 300 Legend Family Breakdown voltage 200 OptiMOS™ and StrongIRFET™ Packages available by voltage class Packages – Surface Mount Devices Technology 20 V–80 V 100 V–150 V Packages – Through Hole Devices Technology 200 V–300 V 20 V–80 V 100 V–150 V 200 V–300 V D²PAK 7pin D²PAK 7pin D²PAK 7pin TO-247 TO-247 TO-247 D²PAK D²PAK D²PAK TO-220 TO-220 TO-220 TO-Leadless TO-Leadless TO-Leadless TO-220 FullPAK TO-220 FullPAK TO-220 FullPAK DPAK DPAK DPAK I²PAK I²PAK I²PAK DirectFET™ DirectFET™ DirectFET™ SuperSO8 SuperSO8 SuperSO8 SO-8 SO-8 SO-8 PQFN 3.3x3.3 PQFN 3.3x3.3 PQFN 3.3x3.3 PQFN 2x2 The combined portfolio covers a broad range of packages. Shown here are the packages available by voltage class range. Please note, not all packages are available in each voltage class. For new products, there will be a consolidation of package names. CanPAK™, S308 and PQFN 5x6 will be named DirectFET™, PQFN 3.3x3.3 and SuperSO8 respectively in the future.