Product Selection Guide OptiMOS™ StrongIRFET™ Combined Portfolio 01_00 | Aug 17, 2015 | PDF | 1.2 mb

OptiMOS™ and StrongIRFET™ combined portfolio
20 V–300 V N-channel Power MOSFETs
www.infineon.com/powermosfet-20V-300V
OptiMOS™ and StrongIRFET™
A powerful combination
Infineon’s semiconductors are designed to bring more efficiency, power density and cost effectiveness.
The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and
performance in applications such as switch mode power supplies (SMPS), motor control and drives,
inverters and computing.
Benefits
››Expanded product portfolio 20 V–300 V
››Able to address a broad range of needs
››Best-in-class technology → OptiMOS™
Power MOSFETs 20 V-300 V - OptiMOS™ and StrongIRFET™ families
Infineon’s highly innovative OptiMOS™ and StrongIRFET™ families consistently meet the highest quality
and performance demands in key specifications for power system design such as on-state resistance
and figure of merit characteristics. OptiMOS™ is the market leader in highly efficient solutions for power
generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption
(e.g. electric vehicle).
OptiMOS™ – optimized for high frequency and low RDS(on) applications
StrongIRFET™ – optimized for low frequency and high rugged applications
OptiMOS™ and StrongIRFET™
Family attributes overview
OptiMOS™ Power MOSFETs provide excellent best-in-class performance. Features include ultra low RDS(on)
as well as low charge for high switching frequency applications. StrongIRFET™ Power MOSFETs are
designed for rugged industrial applications and are ideal for designs with a low switching frequency as
well as those that require a high current carrying capability.
OptiMOS™ family attributes
Designed for high performance
applications
StrongIRFET™ family attributes
Primarily aimed at replacing
Trench Power MOSFETs
Ideal for
high switching frequency
Ultra low RDS(on)
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2015 Infineon Technologies AG.
All Rights Reserved.
Order Number: B111-I0163-V1-7600-EU-EC-P
Date: 08 / 2015
20 V–300 V portfolio
Provide best-in-class and price/
performance products
Designed for industrial
applications
Industry best figure of merit
Ideal for
low switching frequency
High efficiency and
power density
Low RDS(on)
Please note!
THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND ANY INFORMATION
GIVEN HEREIN SHALL IN NO EVENT BE REGARDED AS A WARRANTY, GUARANTEE OR
DESCRIPTION OF ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR PRODUCTS
OR ANY SUITABILITY FOR A PARTICULAR PURPOSE. WITH REGARD TO THE TECHNICAL
SPECIFICATIONS OF OUR PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT
PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND THEIR TECHNICAL
DEPARTMENTS ARE REQUIRED TO EVALUATE THE SUITABILITY OF OUR PRODUCTS FOR THE
INTENDED APPLICATION.
WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR THE INFORMATION GIVEN
HEREIN AT ANY TIME.
Primarily aimed at replacing
planar Power MOSFETs
Provide value in traditional
Trench MOSFET space
High current carrying capability
3.0 Threshold voltage
Logic Level also available
Rugged Silicon
Additional information
For further information on technologies, our products, the application of our products, delivery
terms and conditions and/or prices please contact your nearest Infineon Technologies office
(www.infineon.com).
Warnings
Due to technical requirements, our products may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by us in a written document signed by authorized representatives of Infineon Technologies, our products may not be used in any life endangering applications, including but not limited to medical, nuclear, military, life critical or any other applications
where a failure of the product or any consequences of the use thereof can result in personal injury.
OptiMOS™ and StrongIRFET™
Product family positioning
These graphs show the recommended technology for best fit standard components, price
performance and differentiated products according to switching frequency.
For low frequency applications, OptiMOS™ 5 is the best fit when best-in-class performance is
required. However, StrongIRFET™ is recommended for 20 V to 75 V applications when best-inclass performance is not essential and cost is a more significant consideration.
For best-in-class performance at voltages from 80 V to 150 V, OptiMOS™ 5 is recommended.
If best-in-class is not essential and price/performance is more important, then OptiMOS™ 3 is
the recommendation.
Voltages above 150 V are available in OptiMOS™ 3. In addition, older Trench MOSFETs, shown here
as HEXFET™, are an option for highly commoditized markets where cost is the main consideration.
For high frequency applications, OptiMOS™ 5 is recommended for best-in-class and price/performance
up to 150 V. OptiMOS™ 3 can be considered where high performance is less essential. As with low
frequency applications, OptiMOS™ 3 is available for voltages above 150 V.
Low frequency applications < 100 kHz
Differentiated
products
Best-in-class OptiMOS™ 5
20 V–150 V
OptiMOS™ 5
80 V–150 V
Price
performance
StrongIRFET™
20 V–75 V
„Best fit“
standard
components
OptiMOS™ 3
200 V–300 V
OptiMOS™ 3
80 V–150 V
HEXFET™
80 V–300 V
20 V
80 V
Breakdown voltage
300 V
High frequency applications > 100 kHz
Differentiated
products
Best-in-class OptiMOS™ 5
20 V–150 V
Price
performance
„Best fit“
standard
components
OptiMOS™ 5
20 V–150 V
OptiMOS™ 3
200 V–300 V
OptiMOS™ 3
20 V–150 V
20 V
80 V
Breakdown voltage
300 V
OptiMOS™ and StrongIRFET™
Combined portfolio
Infineon’s OptiMOS™ portfolio, now complemented by StrongIRFET™ Power MOSFETs, creates a
truly powerful combination. The joint portfolio, covering 20 V up to 300 V MOSFETs, can address
a broad range of needs from low to high switching frequencies. The tables below provide a
guidance overview for the recommended OptiMOS™ or StrongIRFET™ products for each major
sub-application and voltage class.
Drives
SMPS
Breakdown voltage
Breakdown voltage
20–30
40
60
75–80
40
60
75–80
100
20–30
40
60
75–80
40
60
75–80
100
60
75–80
100
40
60
75–80
100
100
75–80
100
150
200
60
75–80
40
60
20–30
40
60
75–80
40
60
20–30
40
60
75–80
40
60
20–30
40
60
75–80
60
75–80
100
20–30
40
60
75–80
60
75–80
100
20–30
40
60
75–80
40
60
75–80
20–30
40
60
75–80
40
60
75–80
Inverters
Breakdown voltage
60
75–80
100
75–80
100
75–80
100
20–30
40
60
75–80
100
20–30
40
60
75–80
100
150
150
150
60
75–80
100
20–30
40
60
75–80
100
20–30
40
60
75–80
100
40
60
OptiMOS™
Recommended
BVDSS
Available
40
60
StrongIRFET™
Recommended
BVDSS
Available
150
200
250
300
Legend
Family
Breakdown voltage
200
OptiMOS™ and StrongIRFET™
Packages available by voltage class
Packages – Surface Mount Devices Technology
20 V–80 V
100 V–150 V
Packages – Through Hole Devices Technology
200 V–300 V
20 V–80 V
100 V–150 V
200 V–300 V
D²PAK 7pin
D²PAK 7pin
D²PAK 7pin
TO-247
TO-247
TO-247
D²PAK
D²PAK
D²PAK
TO-220
TO-220
TO-220
TO-Leadless
TO-Leadless
TO-Leadless
TO-220 FullPAK
TO-220 FullPAK
TO-220 FullPAK
DPAK
DPAK
DPAK
I²PAK
I²PAK
I²PAK
DirectFET™
DirectFET™
DirectFET™
SuperSO8
SuperSO8
SuperSO8
SO-8
SO-8
SO-8
PQFN 3.3x3.3
PQFN 3.3x3.3
PQFN 3.3x3.3
PQFN 2x2
The combined portfolio covers a broad range of packages. Shown here are the packages
available by voltage class range. Please note, not all packages are available in each
voltage class. For new products, there will be a consolidation of package names.
CanPAK™, S308 and PQFN 5x6 will be named DirectFET™, PQFN 3.3x3.3 and SuperSO8
respectively in the future.