ETC INFINEON(英飞凌)电源管理选型指南2012

Power Management
Selection Guide 2012
[ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ]
We create Power Management We live Energy Efficiency
Infineon, an innovation leader for Power Semiconductor and
Energy Efficiency technologies is continually developing and
working on the best solutions for your applications and creating
new system architectures using state-of-the-art IC and power
semiconductors.
Driven by our commitment to our customers, we offer
breakthrough innovations such as the highly efficient CoolMOS™
technology or the revolutionary SiC JFET technology together with
Digital Power Control Technologies. Each of which addresses
fundamental design and product requirements such as ease of
use, highest energy efficiency and increased power density.
Our innovative approaches, motivated by continuous improvement, make
your application more efficient, more cost-effective and thus overall, more
successful. We offer you outstanding quality products for Notebook, Notebook
Adapter, Server, Desktop and Graphic Cards, Mainboard, PC Silverbox, Server
Power Supplies, Telecom Power Supplies, E-Mobility, Solar, Industrial Welding,
Induction Heating, Aircon Systems, Lighting and Motor Control.
With dedication and strength we are earnestly working on a better future by
providing you more efficient and nature saving products, shaping the world of
tomorrow. This commitment serves as our foundation and enabler for reaching
international energy standards such as green energy 2020 (in Europe) or NEMS
(National Energy Modeling System) in the US.
We would like to invite you to explore our broad offer of leading energy
efficient products supporting your application needs!
英飛凌的創新效能理論, 秉持著不斷改進的精神,使你的應用系統不只有高效率,
更有效節省成本,因而於市場上更加成功. 我們提供你卓越高品質產品,在筆記電
腦,服務器, 桌上型電腦, 圖型處理器, 主板, 服務器電源, 通信電源, 電動車, 太
陽能, 工業焊機, 電磁爐, 空調系統, 照明系統與動力控制系統.有這樣的專注與
能力, 我們努力專研於給你更環保的產品以及一個更美好的未來. 這個承諾不只
是我們的根基, 更促使我們朝向達到國際能源標準, 像是歐洲的 Green Energy
2020 或美國的 NEMS (National Energy Modeling System) 邁進.
這是我們的榮幸邀請你, 參閱英飛凌廣泛高效能產品目錄, 來找尋最適合你的
應用系統需求的產品.
3
Infineon’s Semiconductor Solutions
for Energy Efficient Consumption
Highly efficient solutions for Consumer and Computing
„ Infineon‘s latest portfolio of SMPS products is consequently optimized along
the requirements of the next generation of highest efficient solutions.
Best choice for Renewable Energy Applications
„ Infineon offers a wide product portfolio with a clear focus on efficiency and
reliability in your Solar Application.
Best solutions for your Lighting Application
„
Infineon offers an innovative product portfolio for general lighting applications,
supporting benchmark efficiency improvements, system miniaturization,
reliability and overall cost savings.
Full range of highly efficient products for your Computing Application
„ Infineon offers superior solutions to fully support the trend towards GreenIT.
Infineon products for highest performance and reliability in your
Motor Control Application
„ With OptiMOS™ 25–250V products we set the benchmark in the industry.
With this broad and comprehensive portfolio Infineon supports your
applications perfectly and offers you the best solution for Motor Control
systems up to 110V DC supply voltage.
4
5
Contents
Applications
8
Notebook
8
Server, Desktop and Graphic Cards
9
Consumer SMPS
11
PC Silverbox
12
Server Power Supply
14
Telecom Power Supply
15
Motor Control
16
E-Mobility
18
Solar
20
Lighting
22
Industrial Welding
24
Induction Heating
25
Aircon
26
Segment Low Voltage
28
Segment High Voltage
52
Segment Silicon Carbide
64
Segment IGBT
72
Segment Power ICS
82
Packages
6
10
Notebook Adapter
We create Power Management We live Energy Efficiency
110
7
Server, Desktop and Graphic Cards
Best Solutions for Small and Cool System Power
Highest Power Density for the Next Generation Voltage Regulation
Standards
Benchmark technologies significantly improve switching losses in power stages and drivers and
thus improve battery lifetime and system reliability. Highest efficiency at all load conditions enables
system designers to overcome thermal challenges to reach a new level of system miniaturization. Our
latest portfolio of notebook products are consequently optimized along the requirements of the next
generation notebook platforms and are easy to design in.
AC Adapter
OptiMOSTM
DC/DC PWM
Controller
}
DC/DC PWM
Controller
Power management system solutions based on OptiMOS™ technology increase Energy Efficiency in
all load conditions, reduce required PCB real estate and are easy to use. Our benchmark solutions
demonstrate dramatically increased efficiency even at high currents and high switching frequencies.
This supports system designers to achieve their efficiency, power and thermal requirements with a
reduced number of phases and thus save overall system cost.
Gate Driver
OptiMOSTM
OptiMOSTM
Chip Set,
DDR, I/O
and other
peripheral
loads
OptiMOSTM
OptiMOSTM
Gate Driver
DC/DC
PWM
Controller
Battery
Charger
DC/DC
PWM
Controller
}
Chip Set,
DDR, I/O
and other
peripheral
loads
}
Chip Set,
DDR, I/O
and other
peripheral
loads
SIP
Gate Driver
OptiMOSTM
}
OptiMOSTM
}
OptiMOSTM
CP U, GPU
CP U, GPU
Gate Driver
DC/DC
PWM
Controller
Clamping,
Level Shifters
& General Purpose
Clamping,
Level Shifters
& General Purpose
Notebook
DC / DC
Topology
buck converter
Voltage Class
30V
Technology
OptiMOS™
Selection
recommendation
Server, Desktop and Graphic Card
DC/ DC
Driver
8
Applications
Notebook
Topology
Voltage Class
Technology
Selection
buck converter
25V
OptiMOS™
recommendation
buck converter
30V
OptiMOS™
reference
buck converter
12V
PX 3517
recommendation
9
Notebook Adapter
Cost-effective Products for Consumer SMPS
Leading-edge Technologies for Notebook Adapters
We offer a wide range of cost-effective products for consumer switch mode power supplies (SMPS). This
includes high voltage MOSFETs, control IC´s and Silicon Carbide diodes for PFC and PWM stages, as well
as low voltage MOSFETs for synchronous rectification. With these products Infineon supports the trends
towards continuously reducing power consumption. Especially versatile is the new CoolMOS™ C6/E6
family which combines good efficiency with attractive pricing, as does our 3rd generation SiC diodes. For
synchronous rectification we recommend our OptiMOS™ series offering extremely low on-state resistance
and low capacitances. New control ICs support topologies such as quasi-resonant flyback and LLC.
We offer a wide range of products for notebook adapters including high voltage MOSFETs and control
ICs for both PFC and PWM stage, as well as low voltage MOSFETs for synchronous rectification. With
these products Infineon supports the trends towards a significantly higher efficiency level, especially
in partial load condition, as well as towards miniaturization of the adapter. Especially versatile is the
CoolMOS™ C6/E6 family which combines good efficieny with ease of use. For synchronous rectification
we recommend our OptiMOS™ series, offering extremely low on-state resistance and low capacitances.
New control ICs support topologies such as quasi-resonant flyback and LLC, which gain market share
within the notebook adapter segment.
Applications
Consumer SMPS
Control ICs
Control ICs
AC
Vin
Vbulk
PFC
Main Stage
Rectification
Vout
DC
AC
Vin
PFC
Vbulk
Main Stage
Rectification
Vout
DC
AUX
Consumer SMPS
Topology
Technology
Selection
AC / DC
600V
600V
600V
CoolMOS™ C6/E6
CoolMOS™ CP
CoolMOS™ C6/E6
ease of use
Efficiency
Recommendation
DC / DC
2 Switch-Forward DC-DC (TTF)
2 Switch-Forward DC-DC (TTF)
2 Switch-Forward DC-DC (TTF)
Fixed Frequency Flyback
Fixed Frequency Flyback
Fixed Frequency Flyback
Single stage
Single stage
LLC HB DC-DC
LLC HB DC-DC
LLC HB DC-DC
Quasi-Resonant Flyback DC-DC
Quasi-Resonant Flyback DC-DC
Quasi-Resonant Flyback DC-DC
Active Clamp Forward
Active Clamp Forward
Active Clamp Forward
ZVS Asym. Half Bridge DC-DC
ZVS Asym. Half Bridge DC-DC
ZVS Asym. Half Bridge DC-DC
ITTF
ITTF
ITTF
600V
600V
600V
650V
650V
650V
650V
600V
650V
600V
650V
900V
900V
900V
800V
800V
800V
650V
600V
650V
600V
500V
600V
CoolMOS™ C6/E6
CoolMOS™ CP
CoolMOS™ CP
CoolMOS™ C6/E6
CoolMOS™ C6/E6
CoolMOS™ C6/E6
CoolMOS™ C6/E6
CoolMOS™ CP
CoolMOS™ CFD2
CoolMOS™ C6/E6
CoolMOS™ CFD2
CoolMOS™ C3
CoolMOS™ C3
CoolMOS™ C3
CoolMOS™ C3
CoolMOS™ C3
CoolMOS™ C3
CoolMOS™ CFD2
CoolMOS™ C6/E6
CoolMOS™ CFD2
CoolMOS™ C6/E6
CoolMOS™ CP
CoolMOS™ C6/E6
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
150-250 V
OptiMOS™
Recommendation
650-800V
CoolSET™
Recommendation
Rectification
Aux
10
Voltage Class
PFC
PFC
PFC
CoolSET™
Notebook Adapter
AC / DC
DC / DC
Topology
DC/DC
Technology
Selection
600V
600V
600V
CoolMOS™ C6/E6
CoolMOS™ CP
CoolMOS™ C6/E6
ease of use
Efficiency
Recommendation
Fixed Frequency Flyback
Fixed Frequency Flyback
Fixed Frequency Flyback
Single stage
Single stage
LLC HB
LLC HB
LLC HB
Quasi-Resonat Flyback
Quasi-Resonat Flyback
Quasi-Resonat Flyback
Active Clamp Flyback
Active Clamp Flyback
650V
650V
650V
650V
600V
650V
600V
650V
900V
900V
900V
800V
800V
CoolMOS™ C6/E6
CoolMOS™ C6/E6
CoolMOS™ C6/E6
CoolMOS™ C6/E6
CoolMOS™ CP
CoolMOS™ CFD2
CoolMOS™ C6/E6
CoolMOS™ CFD2
CoolMOS™ C3
CoolMOS™ C3
CoolMOS™ C3
CoolMOS™ C3
CoolMOS™ C3
ease of use
Efficiency
Recommendation
ease of use
Efficiency
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Active Clamp Flyback
Rectification
Voltage Class
PFC Boost
PFC Boost
PFC Boost
CoolMOS™ C3
Recommendation
Synchronous Rectification
100-120V
800V
OptiMOS™
Recommendation
Fixed Frequency/QR Flyback
650-800V
CoolSET™
Recommendation
11
PC Silverbox
The PC Silverbox has seen a tremendous race towards higher efficiency with peak values in the range
of 92% and above. Special care is dedicated to the 20% load point. We support these trends with our
range of high voltage and low voltage MOSFETs as well as control ICs for power factor correction and
PWM. Especially versatile is the CoolMOS™ C6/E6 family, our latest technology in the superjunction
field, which was pioneered by Infineon Technologies. CoolMOS™ C6/E6 offers easy paralleling and
good efficiency even with less ideal PCB layout. The family is specifically recommended for resonant
topologies such as LLC due to its high body diode ruggedness, for hard switching topologies such as
TTF we recommend the CoolMOS™ C6/E6. New control ICs support continous current mode PFC and the
LLC topology. For the synchronous rectification and the DC/DC we recommend our OptiMOS™ series,
which combine extremely low on-state resistance and low capacitances.
PC Silverbox
AC
Vin
Vbulk
PFC
Rectification
Vout
Technology
Selection
AC / DC
CoolMOS™ C6/E6
CoolMOS™ CP
CoolMOS™ C6/E6
ease of use
Efficiency
Recommendation
DC / DC
2 Switch-Forward (TTF)
2 Switch-Forward (TTF)
2 Switch-Forward (TTF)
LLC HB
LLC HB
LLC HB
Active Clamp Forward
Active Clamp Forward
Active Clamp Forward
ZVS Asym. Half-Bridge
ZVS Asym. Half-Bridge
ZVS Asym. Half-Bridge
600V
600V
600V
650V
600V
650V
800V
800V
800V
650V
600V
650V
CoolMOS™ C6/E6
CoolMOS™ CP
CoolMOS™ CP
CoolMOS™ CFD2
CoolMOS™ C6/E6
CoolMOS™ CFD2
CoolMOS™ C3
CoolMOS™ C3
CoolMOS™ C3
CoolMOS™ CFD2
CoolMOS™ C6/E6
CoolMOS™ CFD2
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
40-80V
OptiMOS™
Recommendation
650-800V
CoolSET™
Recommendation
Aux
Main Stage
Voltage Class
600V
600V
600V
Rectification
Control ICs
Topology
PFC Boost
PFC Boost
PFC Boost
Synchronous Rectification
Fixed Frequency/QR Flyback
Applications
Highest Efficiency with new Topologies for PC Silverbox
12V out +
DC DC/DC for
3.3V and 5V
AUX
12
13
Telecom Power Supply
Technologies for best Efficiency in Servers
Energy Efficiency for Telecom Power Supply
The server market has seen a tremendous shift towards higher efficiency with peak values in the range
of 95% and above.
The Telecom Supply market has grown fast within the last years. High efficiency targets are required
across the entire load range starting at 20% or even at 10% load. We support these trends with our
range of high voltage MOSFETs and SiC Schottky barrier Diodes and Driver ICs as well as our low voltage
MOSFET series for synchronous rectification and Oring.
We specifically recommend our CoolMOS™ C6/E6 series for hard switching applications such as
continous current mode PFC and interleaved two transistor forward. For resonant switching applications
such as phase shift ZVS or LLC, we offer a wide range of products from the CoolMOS™ C6/E6 series, our
latest technology in the superjunction field. For the PFC stage our third generation of SiC Schottky barrier
diode offers best cost-performance ratio in the market. For synchronous rectification we offer various
voltage classes of the OptiMOS™ such as OptiMOS™ 75V series for 12V output. With ultra-low on-state
resistance and very low capacitances the OptiMOS™ series will boost your design to best efficiency.
Furthermore, we offer control ICs for the CCM PFC and isolated drivers such as the 1ED and 2ED series.
AC/DC rectifier
Control ICs
AC
Vin
PFC
Vbulk
Main Stage
Rectification
Applications
Server Power Supply
Isolated DC/DC
Oring
Vout DC
eFuse
Hotswap
Primary
Side PWM
AUX
Analog/Digital Control ICs
Battery Protection
AC
Vin
PFC
Vbulk
Main Stage
Oring,
Hot Swap
Rectification
Vout
Synchronous
Rectification
DC
Load
AUX
Server Power Supply
Voltage Class
Technology
Selection
AC / DC
PFC Boost
PFC Boost
PFC Boost
Bridgless PFC
Bridgless PFC
Bridgless PFC
600V
600V
600V
600V
600V
600V
CoolMOS™ C6/E6
CoolMOS™ CP
CoolMOS™ C6/E6
CoolMOS™ C6/E6
CoolMOS™ CP
CoolMOS™ C6/E6
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
DC/ DC
LLC HB
LLC HB
LLC HB
ZVS Asym. Half-Bridge
ZVS Asym. Half-Bridge
ZVS Asym. Half-Bridge
ZVS Full Bridge Phase Shift
ZVS Full Bridge Phase Shift
ZVS Full Bridge Phase Shift
ITTF
ITTF
ITTF
650V
600V
650V
650V
600V
650V
650V
600V
650V
600V
500V
600V
CoolMOS™ CFD2
CoolMOS™ C6/E6
CoolMOS™ CFD2
CoolMOS™ CFD2
CoolMOS™ C6/E6
CoolMOS™ CFD2
CoolMOS™ CFD2
CoolMOS™ C6/E6
CoolMOS™ CFD2
CoolMOS™ C6/E6
CoolMOS™ CP
CoolMOS™ C6/E6
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
Synchronous Rectification
40-80V
OptiMOS™
Recommendation
Rectification
Oring FET
Aux
14
Topology
Fixed Frequency/QR Flyback
niPoL,
Buck
30V
OptiMOS™
Recommendation
650-800V
CoolSET™
Recommendation
Load
Telecom
AC / DC
DC / DC
Topology
PFC
Bridgeless PFC
LLC HB DC-DC
LLC HB DC-DC
ZVS Full Bridge Phase Shift
ZVS Full Bridge Phase Shift
FRC Full Bridge
ITTF Full Bridge
Voltage Class
600V
600V
600V
650V
600V
650V
600V
600V
Technology
CoolMOS™ C6/E6
CoolMOS™ CP
CoolMOS™ CP
CoolMOS™ CFD2
CoolMOS™ CP
CoolMOS™ CFD2
CollMOS™ CP / ThinQ!™ Diodes
CoolMOS™ C6 / CoolMOS™ CP
Rectification
80V - 200V
OptiMOS™
Oring
60V - 100V
OptiMOS™
Battery Protection
60V - 150V
OptiMOS™
eFuse, Hotswap
60V - 150V
OptiMOS™
Primary Side PWM
75V - 200V
OptiMOS™
Synchronous Rectification
30V - 100V
OptiMOS™
niPoL, Buck
25V / 30V
OptiMOS™
15
Motor Control
Motor Control – a high current application with a wide range of system power from 1W to 50.000W
requires MOSFETs with:
„
„
„
High current capability
Lowest on-state resistance (RDS(on))
Outstanding product performance & quality
Your Application – Our Solution
Application
Packages
4.2V – 18V
OptiMOS™ 25V, 30V
SuperSO8, D²PAK, TO-220
Professional
4.2V – 36V
OptiMOS™ 25V, 30V, 40V, 60V
Light Electric
Vehicles (LEV)
Pedelec
24V – 36V
OptiMOS™ 60V, 75V, 80V
CanPAK™ , SuperSO8, D2PAK,
D2PAK 7pin, TO220
SuperSO8, DPAK
E-scooter
24V – 36V
OptiMOS™ 75V, 80V, 100V
RC-toys
Toy-grade
1.2V – 24V
OptiMOS™ 25V, 30V, 40V, 60V
Hobby-grade
7.2V – 48V
OptiMOS™ 25V, 30V, 40V, 60V, 75V, 80V SuperSO8 and CanPAK™ S & M
Forklift
For each system the right product:
Fans
Small size
Medium size
Big size
< 24V
OptiMOS™ 40V, 60V, 75V, 80V
24V – 60V
OptiMOS™ 60V, 75V, 80V, 100V
> 60V
6V – 48V
SuperSO8, CanPAK™ M,
TO-220, D²PAK 7pin
S3O8, CanPAK™ S, D-PAK
TO-220, TO-220 FB
D²PAK, D²PAK 7pin
OptiMOS™ 120, 150V, 200, 250V
OptiMOS™ 25V -100V
SuperSO8, CanPAK™, S3O8,
D2PAK, DPAK
Features and Benefits of OptiMOS™ 25V – 250V for Motor Control
M
M
Voltage Class
Do-it-yourself (DIY)
Power Tools
With OptiMOS™ 25 – 250V products we set the benchmark in the industry. With this broad and
comprehensive portfolio Infineon supports your application perfectly and offers you the best solution
for Motor Control systems up to 110V DC supply voltage.
M
Nominal
Battery Voltage
Applications
OptiMOS™ for Highest Performance and Reliability in
your Drives Application
Features
High current capability
„ Lowest on-state resistance (RDS(on))
„ Outstanding product performance & quality
„ Highest power density
„ Easy to use
„
Half-bridge
DC brush motors
unidirectional
H-bridge
DC brush motors
bidirectional
B6-bridge
Brushless DC
(BLDC) motors
OptiMOS™ 25V to 250V – a comprehensive portfolio supporting the needs for all Motor Control requirements
250V
20
Voltage Class [V]
200V
20
150V
50
3.6
100V
24
2.5
80
1.9
80V
34
2.3
75V
60V
1.0
40V
1.0
80
6
0.8
25V
6.2
17
0.9
30V
6.5
33
1.0
20V
0
„
220
6.5
120V
Benefits
Highest reliability
„ Highest efficiency
„ Highest power density
„ Lowest board space consumption
„ Minimal device paralleling required
„ System cost improvement
„ Enviromental friendly
„ Easy-to-design-in products
420
1
10
100
1000
RDS(on)
16
17
Best Solutions for Battery Charger
Best Solution for Battery Management
To recharge the battery of an electric car, a charger is needed. In cars with on-board chargers the batteries
can be recharged by plugging them into a standard power outlet at home. Battery charging via the power
grid requires a flexible switching structure in order to handle the different voltage levels and available power
existing in different countries. On-board chargers have to be very efficient so that they are as small and light
as possible. A long-term trend is towards bi-directional charger functions for not only drawing current from the
grid but feeding excess energy back into it. Infineon’s comprehensive portfolio of semiconductors (sensors,
microcontrollers, power semiconductors, power modules, etc.) lends itself perfectly to compact charging
units. The products also function at high switching frequencies for use in small and light charger designs.
Our products in this sector include MOSFETs: CoolMOS™ and the flexible Easy 1B/2B power modules for
overnight low-amp charging, HybridPACK™1 for fast charging with high amps and high-performance 16- and
32-bit microcontroller solutions.
The Battery Management System (BMS) controls battery charge and discharge. An intelligent battery
management system is necessary to lengthen battery life, which reduces the vehicle cost over its
entire lifetime. The system constantly controls the functionality and state of charge of the battery cells.
As they age, the storage capacity of the individual battery cells may lessen at a different speed for
each cell. The challenge is to optimize cell utilization. Circuits to test the cells, and active balancing
of the cells during the charging and discharging process enable the battery life and cruising range
to be effectively lengthened. Our solution for active cell balancing increases usable battery capacity
by over 10 percent. The company’s microcontrollers and sensors monitor functionality, charge and
depth of discharge. These include the 8-bit XC886CM microcontroller family, the 16/32-bit XC22xx
microcontroller family, the OptiMOS™ low-voltage MOSFETs, the TLE 6250/51 CAN transceivers as well
as the TLE 6389-2GV and TLE 42994GM controllers.
AC/DC Battery Charger
Battery Management
IPx65RxxxCFDA
1ED020I12FA
Applications
E-Mobility
Private CAN
L1
RFI
Filter
PFC
DC/DC
Converter
IPx65RxxxCFDA
UCC27322-DGN
IDP 23E60
Battery Block Slave
Battery Master
XC886CM
6x IPG 20N04S4L-08
IPD 70N03S4L
IPD 70N10S3L
TLE 6250G
TLE 6389-2GV
16/32-bit Microcontroller
XC2267-96F66L
TLE 6250G
TLE 42994
Battery Block Slave
Main Switch
XC886CM
6x IPG 20N04S4L-08
IPD 70N03S4L
IPD 70N10S3L
TLE 6250G
TLE 6389-2GV
TLE 4906K
TLE 4998
IKP 20N60T
2x IKW 75N60T
XC27xx
L2
Power
(grid)
RFI
Filter
PFC
DC/DC
Converter
Battery
Management
L3
N
PFC
L1
L2
Isolation
L3
16/32-bit
MCU
XC27xx
DC/DC
Converter
I/V Measurement
RFI
Filter
Control + Display
Ecar (Battery charger)
18
–
CAN
Topology
Voltage
Technology
Selection
Ecar (Battery management)
AC / DC
650V
650V
CoolMOS™ CFDA
CoolMOS™ CFDA
Recommendation
Recommendation
Main Switch
DC / DC
ZVS Phase Shifted Full Bridge
LLC Converter
650V
650V
CoolMOS™ CFDA
CoolMOS™ CFDA
Recommendation
Recommendation
Battery Block Slave
Microcontroller XC27xx
Recommendation
-
150–400V
XC886CM
6x IPG 20N04S4L-08
IPD 70N03S4L
IPD 70N10S3L
TLE 6250G
TLE 6389-2GV
Bridgeless converter
Totem Pole
Control Board
+
Battery Block Slave
Isolation
AC/DC
(15V)
Public CAN
Topology
Voltage
Technology
Selection
high power high current
600V
IGBT Trenchstop™
Recommendation
step up step down
30V
40V
100V
OptiMOS™
OptiMOS™
OptiMOS™
Recommendation
Recommendation
Recommendation
19
Infineon Leading Products for High Efficiency and Reliability
Current Source Microinverter
Applications
Solar
Voltage Source Microinverter
In 2011 solar market again grows 45%, from 17,5Gw to 25Gw globally in terms of installation. Germany
and Italy remain the biggest markets, while US, China, Japan, India are catching up quickly. 2011 is
also a year in which microinverter and DC-DC optimizer really picked up, both grew more than 100%
with rapid market acceptance. Efficiency and reliability remain the most important requirement, where
power semiconductors play a key role.
OptiMOS™
There’re two ways to increase system efficiency: increase inverter efficiency, or in addition, use
distributed power management to perform panel level maximum power point tracking, with either
microinverter or DC-DC optimizer plus string inverter.
Infineon provides a comprehensive portfolio of high-performance products – including CoolMOS™,
OptiMOS™, thinQ!™ (SiC Diode), CoolSiC, IGBTs, IGBT modules, Eice DRIVER™, controller & meter
– to deliver the best efficiency and reliability. Infineon’s leading edge technology like superjunction
MOSFET, Trench+Fieldstop IGBT, Coreless transformer driver, etc, combined with rich experience and
highest quality, ensured our No.1 position in solar application. We’re devoted to grow further with
the industry to bring efficiency beyond 99% and make solar power applicable where ever the sun is
shining.
DC input
CoolMOS™
Rectification
OptiMOS™ 150V-200V SiC Diode
BSC190N15NS3 G IDH05S120
DC/DC Optimizer
OptiMOS™
thinQ!™ CoolMOS™
Unfolding
DC /DC
CoolMOS™ 800V-900V
SPB17N80C3
OptiMOS™ 60V
BSC1028N06NS
Rectification
SiC Diode
IDD04SG60C
DC/AC
CoolMOS™ 600V/650V
IPB65R190CFD
String Inverter
Infineon leading products for Complete Solar System
OptiMOS™
CoolMOS™
thinQ!™
Boost
DC input
CoolMOS™
CoolSiC
IGBT TrenchStop™
IGBT Highspeed3
OptiMOS™
CoolMOS™
thinQ!™
OptiMOS™ 60V-100V
BSC042NE7NS3 G
DC/AC
DC/DC
Boost
CoolMOS™ C6 650V
IPW65R037C6
SiC Diode 600V
IDH16S60C
DC/DC
CoolMOS™ CFD 650V
IPW65R041CFD
SiC Diode 600V
IDH16S60C
DC/AC
IGBT Trenchstop™ 600V
IKW50N60T
CoolMOS™ CFD 650V
IPW65R041CFD
Smart
Meter
String Inverter
UMF11x0
Active
Junction
Box
OptiMOS™
Sensing
PWM
Auxiliary
Power
Supply
CoolSET™
20
MPPT
Controller
& Meter
XE162FL-16F80L
XMC4000
UMF11x0
Driver
EiceDRIVER™
Boost
IGBT Highspeed 3 1200V
IKW40N120H3
SiC JEFT 1200V
IJW120R050T1
Inverter
IGBT Trenchstop 600V
IKW50N60T
SiC JEFT 1200V
IJW120R050T1
Other products
CoolSET™
IGBT Highspeed3
600V/1200V
EiceDriver™
Micro controller
Typical part
ICE2A280Z
IKW50N60H3,
IKW40N120H3
1ED020I12-F2
XE162FL
Function
Auxilary Power Supply
>16kHz switching IGBT
IGBT Driver
MPPT and PWM control
21
Lighting
CoolMOS™ Selection Table
The trend towards energy efficient lighting is apparent and requires both efficient light source
technologies and electronics components. Infineon as global number 1 ranking power semiconductor
market leader for the last 8 consecutive years, offers an innovative product portfolio for general lighting
applications, supporting benchmark efficiency improvements, system miniaturization, realiability and
overall cost savings.
CoolMOS™
Voltage Range
Infineon delivers innovative, high-performance solutions with best-in-class technologies that can be
used in a broad range of applications.
„
„
„
„
„
500V
Fully integrated ballast controllers for fluorescent lamps
Highly efficient offline LED driver ICs for lamp retrofits and low power LED converters
DC/DC switched mode and linear LED drivers for single string LED applications
High performance power management ICs and microcontrollers for intelligent lighting systems
Extensive portfolio of leading edge CoolMOS™ and OptiMOS™ Power MOSFETs
600V
650V
800V
900V
C3
C3
0.085Ω
...
0.12Ω
...
2.7Ω
1.2Ω
Product Family and RDS(on) Range (* not for new designs)
Lighting applications vs. power range and topology
Applications & Topology
Applications
Global concerns over climate changes require using our limited energy resources more efficiently.
Approximately 20% of the global electrical energy is consumed by lighting applications.
High Intensity Discharge (HID)
Full-Bridge/Half-Bridge
Outdoor & Industrial Lighing
CE
C3*
CP
0.19Ω
...
0.07Ω
...
0.14Ω
...
3Ω
3Ω
0.52Ω
CP
C3
C6/E6
CFD
0.045Ω 0.07Ω 0.041Ω 0.08Ω
...
...
...
...
0.6Ω
6Ω
CFD2 C6/E6
C3*
0.041Ω 0.037Ω 0.07Ω
...
...
...
3.3Ω
0.72Ω
1.4Ω
FL
HID
HID
0.6Ω
0.6Ω
Application & Topologies
Linear/Compact Fluorescent (LFL, CFL)
Resonant Half-Bridge
Commercial, Industrial, Residential, Outdoor Lighting
LED High Power
DCM PFC + LLC Half-Bridge + DC/DC
Commercial, Outdoor, Industrial Lighting
PFC / Resonant
Half-Bridge
FL
PFC / Resonant
Full-Bridge
HID
HID
LED
Single Stage PFC /
Flyback
LED Mid Power
DCM PFC + QR Flyback
with PCC*
Commerial & Industrial
Lighting
low power
low power
LED
PFC / QR Flyback
Power Range [W]
PFC / LLC
Half-Bridge
LED
low power
LED
Single Stage PFC /
non-isolated Buck
LED Low Power
Single stage PFC/Flyback, PCC*
Single stage PFC/non-isolated Buck, PCC*
DC/DC Buck, Boost, Linear
Residential & Commercial Lighting
(e.g. Retrofit Lamps, Downlights, Spotlights
LED
low power
LED
mid power
LED
high power
LED
high power
LED
high power
mid power
LED
mid power
LED
high power
* Primary side current control
22
23
Induction Heating
Our IGBTs for Welding – the Power is in Your Hands
Highest Performance, Efficiency and Reliability IGBTs
for Induction Heating Cooktops
In the field of industrial welding, discretes are used for home and small inverterised welders. Infineon’s
high speed devices are used to reduce the size of the active components and transformer (25kHz -->
70kHz). Infineon’s IGBTs offer high speed/high performance to get the best out of your system.
Welding Inverter
Full bridge
Two transistor forward
4x High Speed IGBT
T1
2x High Speed IGBT
T3
D2
VIN
T1
iout
D1
D1
Lout
D3
D4
iout
New Edition IHW40N60RF and 600V HighSpeed 3 family have been added to address high speed
switching topologies where switching losses have been optimized. These devices provide excellent
performance over temperature and ensure up to 20% lower switching losses compared to competitor
devices.
The 1350V 3rd Generation induction heating specific IGBT has recently been added to the portfolio. The
device has been designed to offer a higher voltage breakthrough headroom to offer customer higher
reliability whilst not compromising device performance.
T2
T4
Being the market leader in IGBTs, we offer a comprehensive, high performance portfolio of 600V,
1100V, 1200V, 1350V, 1600V discrete IGBTs for resonant-switching applications like induction heating
cooktops. The portfolio has been developed to provide benchmark performance in terms of switching
and conduction losses, which ensures best-in-class efficiency and fast time to market.
Lout
VIN
T2
Applications
Industrial Welding (MMA < 280A)
D2
Induction Heating Inverter (Current Resonance)
Induction Heating Inverter (Voltage Resonance)
Half bridge
PFC
Single switch
Lres
RC–IGBT
Industrial Welding
DC/AC
PFC AC/DC
Aux
IGBT Driver
24
Topology
Voltage Class
Technology
600V
1200V
600V
1200V
HighSpeed 3
HighSpeed 3
HighSpeed 3
HighSpeed 3
Recommendation
Recommendation
Recommendation
Recommendation
Boost Converter / switch
Boost Converter / switch
600V
1200V
HighSpeed 3
HighSpeed 3
Reference
Reference
Boost Converter
650V
CoolSET F3
Recommendation
EiceDRIVER™ (1ED)
EiceDRIVER™ (2ED)
Efficiency
Recommendation
600V/1200V
600V/1200V
Cres
RC-IGBT
2
Lres
CK2
Cres
VAC
Cbus
2
Selection
Full-Bridge
Full-Bridge
Two Transistor Forward
Two Transistor Forward
Half-Bridge Single Channel
Half-Bridge Dual Channel
Cbus
Lf
Cres
CK1
HV-Driver
VAC
MCU
Lf
Induction Heating
Topology
Voltage Class
DC/AC
Series-Resonant Half-Bridge 20kHz
Series-Resonant Half-Bridge 60kHz
Quasi-Resonant Single Ended
Quasi-Resonant Single Ended
Quasi-Resonant Single Ended
Quasi-Resonant Single Ended
600V
600V
1100V
1200V
1350V
1600V
RC-H
RC-HF
RC-H
RC-H
RC-H
RC-H
Recommendation
Recommendation
Recommendation
Reference
Reference
Recommendation
Flyback
Flyback
Boost Converter
650V
800V
800V
CoolSET QR
CoolSET QR
CoolSET F3
Efficiency
Recommendation
Reference
Aux
Technology
Selection
25
Aircon
Applications
Infineon’s Innovative Approach for Aircon Reference Board
We offer a wide portfolio of energy saving chips for the whole system chain of power electronic devices
for air-conditioning systems. To enable engineers a fast entry in the usage of our devices an aircon
reference board has been developed.
Features
1 kW compressor inverter stage using 15 A RC-Drives IGBT in DPAK (TO-252)
„ 200 W outdoor fan inverter stage using 4 A RC-Drives IGBT in DPAK (TO-252)
„ 1.5 kW CCM-PFC using 20 A HighSpeed 3 IGBT
„ 10 A SiC-Diode
„
RC
RST
BSL
Motor 0
CAN
5 kV Isolation
OCDS
JTAG
HEATSINK
SSC
&
ASC
HALL
We are the Leader in
Energy Efficiency Technologies
XC878
RC
RC
RC
RC
SiC
Diode
Being the Leader in Energy Efficiency Technologies, Infineon’s products are enormously
important for future energy supplies in terms of both exploiting renewables and using
energy efficiently. Explore our wide offer of high-end products for your application:
Rectifier
RC
Driver
CAN
OP AMP
motor 0
Gain 23
6ED003
L06-F
ICE3PCS02G
10mΩ
20mΩ
15V
DC/CD
CoolSet
F3
BSL
ASC
CAN
5 kV Isolation
OCDS
JTAG
HALL
2
HS3
IGBT
shunt
motor O
5V
LDO
OP AMP
motor 1
Gain 16
shunt
PFC
C
h
o
k
e
Relais
OP AMP PFC
Gain 16
offset 2.5V
20mΩ
XE164
RC
RC
RC
RC
RC
RC
270µF
400V
shunt
motor 1
EMC Filter
ENCODER
RST
HALL
0
6ED003
L06-F
270uF
400V
SSC
CAN
Motor1
Aircon
PFC AC / DC
DC / AC
Aux
IGBT Driver
Topology
Voltage Class
230V
AC
DC
Technology
Selection
PFC CCM (low frequency)
PFC CCM (high frequency)
PFC CCM
PFC CCM
600V
600V
600V
600V
TRENCHSTOP™
HighSpeed 3
CoolMOS™ C6
SiC Diode
Recommendation
Recommendation
Reference
Recommendation
B6-VSI
B6-VSI
600V
600V
RC-Drives IGBT
TRENCHSTOP™
Recommendation
Efficiency
Boost Converter
650V
CoolSET™ F3
Reference
Driver for B6 Bridge
600V
EiceDRIVER™ (6ED)
Recommendation
Infineon’s 650V CoolMOS™ CFD2
– market leading technology with integrated fast body diode
 World’s lowest area specific on-state resistance (Ron * A)
 Softer commutation behavior and therefore better EMI behavior
 Best fit for applications such as telecom, server, battery charging, solar,
HID lamp ballast, LED lighting
Infineon’s PowerStage 5x6 and 3x3 – save space, minimize losses, boost efficiency
 Shrink your design up to 85%
 Peak efficiency of 93.5%
 Best fit for applications such as notebook, motherboard, server and telecom
Infineon’s RC-Drives Fast IGBTs – drive high-frequency inverter for comfortable quietness
Smooth switching performance leading to low EMI levels
 Optimized Eon, Eoff and Qrr for low switching losses
 Best fit for applications in domestic and industrial drives like compressors,
pumps and fans

Infineon’s New OptiMOS™ 40V/60V
Industry’s first 1mW 40V product in SuperSO8
 35% lower RDS(on) than alternative devices
 Highest system efficiency and power density
 Best fit for applications such as sychronous rectification, solar micro inverter,
isolated DC/DC converters, motor control for 12-48V systems and Or-ing switches

For further information please visit our website:
26
[ www.infineon.com/power_management_new_products ]
27
OptiMOS™
Available in innovative space saving packages like CanPAK™, SuperSO8 or S3O8, these products
reduce the volume consumption up to more than 90%. In addition, they improve switching noise and
EMI for SMPS, as well as other industrial applications.
Efficiency of OptiMOS™ 25V in a six-phase server VRD
96
94
92
90
88
86
84
82
80
78
76
74
72
70
Outstanding performance of the
new OptiMOS™ 25V and 30V
products is exemplified on a
six-phase Server Vcore VRD. 93%
peak efficiency and >90% full load
efficiency is demonstrated with the
new OptiMOS™ 25V products in
SuperSO8 package.
(HighSide: BSC050NE2LS;
LowSide: BSC010NE2LS)
Vin = 12V, Vout = 1.2V
Lout = 210nH, Vdrive = 5V
fswitch = 350kHz
fswitch = 500kHz
0
20
40
60
80
100
120
140
160
180
4
Infineon
Next Best Competitor
3
2
1
0
25
30
40
Voltage Class [V]
60
75
Infineon
80
17.5
Next Best Competitor
Vin = 12V
Vdrive = 5V
Iout = 20A
15.0
60
12.5
40
20
0
IGBT
5
Clean waveforms for optimized EMI bahaviour make new OptiMOS™ 25V/30V products easy to use
100
80
100
120
150
Voltage Class [V]
200
250
10.5
7.5
5.0
2.5
0
-2.5
-5.0
0
100
200
300
400
500
600
700
800
900
1000
Packages
Time [ns]
With the new OptiMOS™ 25V/30V
products short switching times
(rise and fall times <5ns) go in
hand with excellent EMI behaviour.
An integrated damping network
guarantees low over- and
undershoot and minimizes ringing
without sacrifycing efficiency
Power ICs
6
120
Voltage across SyncFet [V]
RDS(on) @ 10V [mΩ] in SuperSO8
RDS(on) @ 10V [mΩ] in SuperSO8
Output Current [A]
7
Applications
With the new OptiMOS™ products, we have the best solution to
Save overall system costs by reducing the number of phases in multiphase converters
„ Reduce power losses and increase Efficiency for all load conditions
„ Save space with smallest packages like CanPAK™ or S308
„ Minimize EMI in the system making external snubber networks obsolete and the products easy to
design-in
„
Efficiency [%]
OptiMOS™ products are suitable for a wide range of applications:
„ VR-modules for server
„ Synchronous rectification for AC/DC SMPS
„ DC/DC converters
„ Motor control 12V-110V system
„ Solar micro inverter and Maximum Power Point Tracker (MPPT)
„ LED lighting
„ Notebook and desktop
Low Voltage
The solution can be found in the low voltage Power MOSFET family, OptiMOS™ 20V up to 250V, which
consistently sets the benchmark in key specifications for power system design, including leading onstate resistance and Figure of Merit characteristics which lead to reduced power losses and improved
overall efficiency.
Lower power losses enable system cost improvement by reducing the need for device paralleling and
allowing smaller heatsinks. OptiMOS™ family also contributes to customers’ goals of providing more
compact power supply designs.
With the new OptiMOS™ 25V and 30V product family, Infineon sets new standards in power density
and Energy Efficiency for discrete power MOSFETs. Ultra low gate and output charge, together with
lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the
demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.
OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI
behavior, as well as increased battery life.
High Voltage
Infineon’s innovative products serve the market needs throughout the whole energy supply chain.
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro
inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). In all
these areas, our customers face the challenge of growing power demand, higher efficiency and lower
cost. At the same time, the available space is constantly shrinking, leading to higher power density
requirements.
Demonstrating > 93% Efficiency in Voltage Regulation for
Power Applications
Silicon Carbide
Leading-Edge Solutions for a Better Future
28
29
SuperSO8 / S3O8 – the Intelligent Way to Highest
Efficiency and Power Density
With OptiMOS™ 40V – 250V products, we set the benchmark in industry. The leading on-state
resistance RDS(ON) and switching behaviour reduce power losses and enable overall efficiency levels
exceeding 95%. With these products Infineon supports the market trend towards Energy Efficiency
targets such as Energy Star Diamond.
CanPAK™ – Best Thermal Behaviour in a Tiny Footprint
150
90
145
88
86
BSB028N06NN3 G
Competitor
84
82
50
100
150
200
250
300
350 400 450 500
Output Power [W]
140
135
130
Competitor
IPP110N20N
IPB065N15N3
120
550
120
10
15
20
25
30
output current [A]
PowerStage3x3 and PowerStage 5x6 – Save Space,
Minimize Losses, Boost Efficiency
PowerStage 3x3 and Powerstage 5x6 are leadless SMD packages, which integrate the low-side and
high-side MOSFETs of a synchronous DC/DC converter into a 3.0x3.0mm² or 5.0x6.0mm² package outline.
Designers are able to shrink their designs up to 85% by replacing two seperate discrete packages such as
SO-8 or SuperSO8 with this new package.
Both, the small outline and the interconnection of the two MOSFETs within the package minimize the loop
inductance which boosts efficiency. With the new OptiMOS™ technology PowerStage 3x3 and Powerstage
5x6 achieve a peak efficiency of 93,5%. PowerStage 3x3 can handle an application current up to 12,5A and
PowerStage 5x6 up to 30A.
Packages
Power ICs
IGBT
More than 1% higher peak efficiency can be reached by using Infineon products in synchronous
rectification of a 600W Server power supply with 12V output.
35
Silicon Carbide
overshoot [V]
Efficiency [%]
155
High Voltage
CanPAK™ portfolio is the best fit for a broad number of industrial applications like voltage regulator for
servers, DC/DC converters, solar micro inverters and Maximum Power Point Trackers (MPPT), low voltage
drives and synchronous rectification. With only 31mm² footprint, CanPAK™ M allows 65% space reduction in
power components on the board compared to traditional D2PAK. In addition, the metal ‘Can’ enables doublesided cooling along with almost no package parasitic inductances, leading to higher systems efficiency.
Efficiency
92
Low Voltage
In applications like synchronous rectification in SMPS, motor drives and DC/DC converters, high power
density and high efficiency are the major driving factors. Moving from TO-220 to SuperSO8 reduces the
volume consumption drastically. With three times lower parasitics compared to TO-220, SuperSO8 offers
highest efficiency and lowest design efforts due to reduced spikes.
OptiMOS™ technology enables for the first time very low RDS(ON) values needed for high current
applications in space saving packages such as SuperSO8, S3O8 and CanPAK™, which were
previously only possible in bulky packages.
94
Applications
Always a Step Ahead with Infineon
30
31
TO-252
DPAK
CanPAK™
M-Can
CanPAK™
S-Can
TO-263
7 Pin
TO-220
TO-220
FullPAK
Part Number
Monolithic
integrated Schottky
like diode
BVDSS (V)
High Side
Low Side
High Side
Low Side
RDS(ON)= 1.9mΩ
BSC0910NDI

25
5.9
1.6
7.7
25.0
BSC026N02KS G
BSC0911ND
–
25
4.8
1.7
7.7
25.0
RDS(ON)=2.6mΩ
BSC0921NDI

30
7.0
2.1
5.8
21.0
SuperSO8
SO-8
BSC019N02KS G
<2
2-4
4-10
RDS(on) [mΩ] @ VGS=4,5V max
Qg [nC] @ VGS=4,5V typ.
BSC046N02KS G
BSC0923NDI

30
7.0
3.7
5.2
12.2
RDS(ON)=4.6mΩ
BSC0924NDI

30
7.0
5.2
5.2
8.6
BSO330N02K G
BSC0925ND
–
30
6.4
6.4
5.2
6.7
RDS(ON)=33.0mΩ
BSZ0907ND
–
30
13.0
10.0
4.3
5.3
BSZ0908ND
–
30
25.0
13.0
2.0
4.3
30-40
Low Voltage
RDS(on) @VGS=10V TO-251 /
TO-251 SL
[mΩ]
Applications
OptiMOS™ 25/30V Normal Level in PowerStage 3x3 and 5x6
OptiMOS™ 20V Super Logic Level
<1.0
TO-252
DPAK
CanPAK™
M-Can
CanPAK™
S-Can
TO-263
7 Pin
TO-220
TO-220
FullPAK
SuperSO8
BSB008NE2LX
BSC009NE2LS
RDS(ON)= 0.8mΩ
RDS(ON)=0.9mΩ
BSB012NE2LX
BSC010NE2LS
RDS(ON)=1.2mΩ
RDS(ON)=1.0mΩ
BSB013NE2LXI
BSC010NE2LSI
RDS(ON)=1.3mΩ
RDS(ON)=1.05mΩ
S308
Silicon Carbide
RDS(on) @VGS=10V TO-251 /
TO-251 SL
[mΩ]
High Voltage
OptiMOS™ 25V Logic Level
BSC014NE2LSI
1-2
RDS(ON)=1.4mΩ
BSC018NE2LS
BSZ18NE2LS
RDS(ON)=1.8mΩ
RDS(ON)=1.8mΩ
BSC018NE2LSI
BSZ018NE2LSI
RDS(ON)=1.8mΩ
RDS(ON)=1.8mΩ
BSC024NE2LS
RDS(ON)=2.4mΩ
BSC032NE2LS
2-4
RDS(ON)=3.2mΩ
BSF030NE2LQ
RDS(ON)=3.0mΩ
4-6
IGBT
BSZ036NE2LS
RDS(ON)=3.6mΩ
BSC050NE2LS
RDS(ON)=5.0mΩ
Packages
Power ICs
BSZ060NE2LS
RDS(ON)=6.0mΩ
32
33
CanPAK™
S-Can
TO-263
D2PAK
TO-263
7 Pin
BSB012N03LX3 G
IPB009N03L G
RDS(ON)=1.2mΩ
RDS(ON)=0.95mΩ
TO-220
Super
SO8
S308
Bare Die
(RDS(on) typ.)
BSC011N03LS
RDS(on) @VGS=10V TO-251 /
TO-251 SL
[mΩ]
IPC218N03L3
RDS(on)=1.1mΩ
BSC011N03LSI
TO-252
DPAK
CanPAK™
M-Can
CanPAK™
S-Can
TO-263
D2PAK
TO-263
7 Pin
TO-220
IPB096N03L G
IPP096N03L G
BSC080N03LS G
BSZ088N03LS G
RDS(ON)=9.0mΩ
RDS(ON)=9.0mΩ
RDS(ON)=9.6mΩ
RDS(ON)=9.6mΩ
RDS(ON)=8.0mΩ
RDS(ON)=8.8mΩ
BSC090N03LS G
RDS(ON)=9.0mΩ
BSC0909NS
RDS(ON)=1.4mΩ
RDS(on)=9.2mΩ
BSB017N03LX3 G
BSC016N03LS G BSZ019N03LS
RDS(ON)=1.7mΩ
RDS(ON)=1.6mΩ
IPC055N03L3
RDS(on)=1.9mΩ
BSC0901NS
BSC0901NSI
RDS(on)=2.0mΩ
BSF024N03LT3 G
BSC020N03LS G BSZ0901NSI
RDS(ON)=2.4mΩ
RDS(ON)=2.0mΩ
IPC042N03L3
RDS(on)=2.1mΩ
BSC0902NS
BSZ0902NS
RDS(on)=2.6mΩ
RDS(on)=2.6mΩ
IPD105N03L G
IPB114N03L G
IPP114N03L G
BSC100N03LS G
BSZ100N03LS G
RDS(ON)=10.5mΩ
RDS(ON)=10.5mΩ
RDS(ON)=11.4mΩ
RDS(ON)=11.4mΩ
RDS(ON)=10.0mΩ
RDS(ON)=10.0mΩ
BSC120N03LS G
BSZ0909NS
BSC0902NSI
2 x 15
RDS(on)=2.8mΩ
IPD031N03L G
IPB034N03L G
IPP034N03L G
BSC030N03LS G BSZ035N03LS G
RDS(ON)=3.1mΩ
RDS(ON)=3.1mΩ
RDS(ON)=3.4mΩ
RDS(ON)=3.4mΩ
RDS(ON)=3.0mΩ
RDS(on)=12.0mΩ
IPS135N03L G
IPD135N03L G
IPB147N03L G
IPP147N03L G
BSZ130N03LS G
RDS(ON)=13.5mΩ
RDS(ON)=13.5mΩ
RDS(ON)=14.7mΩ
RDS(ON)=14.7mΩ
RDS(ON)=13.0mΩ
7+9
2 x 7.2
RDS(on)=2.8mΩ
IPS031N03L G
RDS(on)=12.0mΩ
IPC014N03L3
9 + 19
BSC025N03LS G BSZ0902NSI
2-4
IPS105N03L G
10-15
RDS(on)=1.9mΩ
RDS(ON)=2.5mΩ
Bare Die
(RDS(on) typ.)
IPD090N03L G
BSC014N03LS G
1-2
S308
IPS090N03L G
8-10
RDS(on)=1.1mΩ
Super
SO8
Low Voltage
CanPAK™
M-Can
High Voltage
TO-252
DPAK
BSC072N03LD G
RDS(ON)=7.2mΩ
BSC150N03LD G
RDS(ON)=15.0mΩ
RDS(ON)=3.5mΩ
Silicon Carbide
RDS(on) @VGS=10V TO-251 /
TO-251 SL
[mΩ]
OptiMOS™ 30V Logic Level / Normal Level
BSC034N03LS G BSZ0904NSI
RDS(ON)=3.4mΩ
Applications
OptiMOS™ 30V Logic Level
RDS(on)=4.0mΩ
BSC0904NSI
RDS(on)=3.7mΩ
IPS040N03L G
IPD040N03L G
BSF050N03LQ3 G IPB042N03L G
IPP042N03L G
BSC042N03LS G BSZ050N03LS G IPC028N03L3
RDS(ON)=4.0mΩ
RDS(ON)=4.0mΩ
RDS(ON)=5.0mΩ
RDS(ON)=4.2mΩ
RDS(ON)=4.2mΩ
RDS(ON)=4.2mΩ
RDS(ON)=5.0mΩ
IPS050N03L G
IPD050N03L G
IPB055N03L G
IPP055N03L G
BSC0906NS
BSZ058N03LS G
RDS(ON)=5.0mΩ
RDS(ON)=5.0mΩ
RDS(ON)=5.5mΩ
RDS(ON)=5.5mΩ
RDS(on)=4.5mΩ
RDS(ON)=5.8mΩ
IPC022N03L3
BSC050N03LS G
4-6
RDS(ON)=5.0mΩ
IGBT
BSC052N03LS
RDS(on)=5.2mΩ
BSC057N03LS G
RDS(ON)=5.7mΩ
IPD060N03L G
IPB065N03L G
IPP065N03L G
BSZ065N03LS
RDS(ON)=6.0mΩ
RDS(ON)=6.0mΩ
RDS(ON)=6.5mΩ
RDS(ON)=6.5mΩ
RDS(on)=6.5mΩ
IPS075N03L G
IPD075N03L G
IPB080N03L G
IPP080N03L G
BSC0908NS
RDS(ON)=7.5mΩ
RDS(ON)=7.5mΩ
RDS(ON)=8.0mΩ
RDS(ON)=8.0mΩ
RDS(on)=8.0mΩ
Packages
Power ICs
6-8
IPS060N03L G
34
35
BSZ035N03MS G
RDS(ON)=3.5mΩ
2-6
TO-263
7 Pin
TO-220
TO-220
FullPAK
SuperSO8
S08
CanPAK™
M
TO-263
D2PAK
TO-263
7 Pin
TO-220
TO-220
FullPAK
Super
SO8
BSC010N04LS
BSC016N03MS G
RDS(ON)=1.6mΩ
BSC010N04LSI**
BSC020N03MS G BSO033N03MS G
RDS(ON)=2.0mΩ
RDS(ON)=3.3mΩ
BSC014N04LS
BSC025N03MS G BSO040N03MS G
RDS(ON)=2.5mΩ
RDS(ON)=4.0mΩ
BSC014N04LSI**
Bare Die
(RDS(on) typ.)
RDS(ON)=1.05mΩ
BSC030N03MS G
RDS(ON)=3.0mΩ
RDS(ON)=1.4mΩ
RDS(ON)=1.45mΩ
<2
BSB014N04LX3 G IPB015N04N G
RDS(ON)=1.4mΩ
RDS(ON)=1.5mΩ
IPB011N04L G
RDS(ON)=1.1mΩ
BSB015N04NX3 G IPB015N04L G
RDS(ON)=1.5mΩ
RDS(ON)=1.5mΩ
IPB011N04N G
RDS(ON)=1.1mΩ
IPP015N04N G
RDS(ON)=1.5mΩ
BSC016N04LS G
RDS(ON)=1.6mΩ
BSZ050N03MS G
RDS(ON)=5.0mΩ
BSC042N03MS G BSO051N03MS G
RDS(ON)=4.2mΩ
RDS(ON)=5.1mΩ
BSZ058N03MS G
RDS(ON)=5.8mΩ
BSC050N03MS G
RDS(ON)=5.0mΩ
BSC018N04LS G
RDS(ON)=1.8mΩ
BSC057N03MS G
RDS(ON)=5.7mΩ
BSC019N04NS G
RDS(ON)=1.9mΩ
BSZ088N03MS G
RDS(ON)=8.8mΩ
S308
RDS(ON)=1.0mΩ
BSC080N03MS G BSO083N03MS G
RDS(ON)=8.0mΩ
RDS(ON)=8.3mΩ
BSC090N03MS G
RDS(ON)=9.0mΩ
10-20
TO-252
DPAK
BSC014N03MS G
RDS(ON)=1.4mΩ
BSO065N03MS G
RDS(ON)=6.5mΩ
6-10
RDS(on) @VGS=10V
[mΩ]
BSZ100N03MS G
RDS(ON)=10.0mΩ
BSC100N03MS G BSO110N03MS G
RDS(ON)=10.0mΩ
RDS(ON)=11.0mΩ
BSZ130N03MS G
RDS(ON)=13.0mΩ
BSC120N03MS G BSO130N03MS G
RDS(ON)=12.0mΩ
RDS(ON)=13.0mΩ
>20
BSO220N03MS G
RDS(ON)=22.0mΩ
2 x 15
BSO150N03MD G
RDS(ON)=15.0mΩ
2 x 22
BSO220N03MD G
RDS(ON)=22.0mΩ
Low Voltage
<2
TO-263
D2PAK
IPB022N04L G
RDS(ON)=2.2mΩ
2-3
3-4
IPB020N04N G
RDS(ON)=2.0mΩ
BSC017N04NS G
RDS(ON)=1.7mΩ
IPP023N04N G
RDS(ON)=2.3mΩ
IPB023N04N G
RDS(ON)=2.3mΩ
IPD036N04L G
RDS(ON)=3.6mΩ
IPC218N04N3
IPC171N04N
BSC027N04LS G
RDS(ON)=2.7mΩ
BSZ023N04LS
RDS(ON)=2.3mΩ
BSC030N04NS G
RDS(ON)=3.0mΩ
IPB039N04L G
RDS(ON)=3.9mΩ
IPP039N04L G
RDS(ON)=3.9mΩ
BSC035N04LS G
RDS(ON)=3.5mΩ
BSZ040N04LS G
RDS(ON)=4.0mΩ
IPB041N04N G
RDS(ON)=4.1mΩ
IPP041N04N G
RDS(ON)=4.1mΩ
BSC050N04LS G
RDS(ON)=5.0mΩ
BSZ042N04NS G
RDS(ON)=4.2mΩ
IPB052N04N G
RDS(ON)=5.2mΩ
IPP048N04N G
RDS(ON)=4.8mΩ
BSC054N04NS G
RDS(ON)=5.4mΩ
IPP065N04N G
RDS(ON)=6.5mΩ
BSC059N04LS G
RDS(ON)=5.9mΩ
IPD038N04N G
RDS(ON)=3.8mΩ
4-7
IPB075N04L G
RDS(ON)=7.5mΩ
7-8
8-10
IPD088N04L G
RDS(ON)=8.8mΩ
10-11
IPD105N04L G
RDS(ON)=10.5mΩ
BSZ105N04NS G
RDS(ON)=10.5mΩ
IPD160N04L G
RDS(ON)=16.0mΩ
BSZ165N04NS G
RDS(ON)=16.5mΩ
IPB093N04L G
RDS(ON)=9.3mΩ
BSC093N04LS G
RDS(ON)=9.3mΩ
BSZ097N04LS G
RDS(ON)=9.7mΩ
IPD170N04N G
RDS(ON)=17.0mΩ
Power ICs
13-17
High Voltage
S308
Silicon Carbide
TO-252
DPAK
IGBT
RDS(on) @VGS=10V TO-251 /
TO-251 SL
[mΩ]
OptiMOS™ 40V Logic Level / Normal Level
Applications
OptiMOS™ 30V Logic Level 5V optimized
Packages
** Monolithically Integrated Schottky Like Diode
36
37
CanPAK™ CanPAK™
M
S
TO-262
I2PAK
TO-263
D2PAK
TO-263
7 Pin
TO-220
TO-220
FullPAK
Super
SO8
IPD025N06N
BSB028N06NN3 G
IPI020N06N
IPB019N06L3 G
IPB010N06N
IPP020N06N
BSC016N06NS
RDS(ON)=2.5mΩ
RDS(ON)=2.8mΩ
RDS(ON)=2.0mΩ
RDS(ON)=1.9mΩ
RDS(ON)=1.0mΩ
RDS(ON)=2.0mΩ
RDS(ON)=1.6mΩ
IPI024N06N3 G
IPB021N06N3 G IPB014N06N
IPP024N06N3 G
BSC028N06NS
RDS(ON)=2.4mΩ
RDS(ON)=2.1mΩ
RDS(ON)=1.4mΩ
RDS(ON)=2.4mΩ
RDS(ON)=2.8mΩ
IPI029N06N
IPB026N06N
IPB016N06L3 G
IPP029N06N
BSC028N06LS3 G
RDS(ON)=2.9mΩ
RDS(ON)=2.6mΩ
RDS(ON)=1.6mΩ
RDS(ON)=2.9mΩ
RDS(ON)=2.8mΩ
<3
S308
(RDS(on) typ.)
IPC218N06L3
IPC218N06N3
IPB029N06N3 G IPB017N06N3 G
RDS(ON)=2.9mΩ
Bare Die
RDS(on) @VGS=10V
[mΩ]
TO-252
DPAK
2-4
4-6
TO-262
I2PAK
TO-263
D2PAK
TO-263
7 Pin
IPI023NE7N3 G
RDS(ON)=2.3mΩ
IPB020NE7N3 G
RDS(ON)=2.0mΩ
IPP023NE7N3 G
RDS(ON)=2.3mΩ
IPI034NE7N3 G
RDS(ON)=3.4mΩ
IPB031NE7N3 G
RDS(ON)=3.1mΩ
IPP034NE7N3 G
RDS(ON)=3.4mΩ
IPI052NE7N3 G
RDS(ON)=5.2mΩ
IPB049NE7N3 G
RDS(ON)=4.9mΩ
IPP052NE7N3 G
RDS(ON)=5.2mΩ
TO-220
FullPAK
Super SO8
S308
Bare Die
(RDS(on) typ.)
BSC036NE7NS3 G
RDS(ON)=3.6mΩ
IPC302NE7N3
BSC042NE7NS3 G
RDS(ON)=4.2mΩ
IPP062NE7N3 G
RDS(ON)=6.2mΩ
6-12
RDS(ON)=1.7mΩ
TO-220
Low Voltage
TO-252
DPAK
RDS(on) @VGS=10V
[mΩ]
Applications
OptiMOS™ 75V Normal Level
OptiMOS™ 60V Logic Level / Normal Level
IPB023N06N3 G
RDS(ON)=2.3mΩ
IPB034N06L3 G
IPB034N06N3 G IPP032N06N3 G IPA032N06N3 G BSC031N06NS3 G BSZ042N06NS
RDS(ON)=3.4mΩ
RDS(ON)=3.4mΩ
IPD034N06N3 G
IPI037N06L3 G
IPB037N06N3 G
RDS(ON)=3.4mΩ
RDS(ON)=3.7mΩ
IPD035N06L3 G
IPI040N06N3 G
RDS(ON)=3.5mΩ
RDS(ON)=4.0mΩ
RDS(ON)=4.9mΩ
RDS(ON)=4.0mΩ
RDS(ON)=3.2mΩ
RDS(ON)=3.1mΩ
BSC039N06NS
RDS(ON)=3.7mΩ
RDS(ON)=3.7mΩ
RDS(ON)=3.9mΩ
IPB049N06L3 G
IPP040N06N
IPD038N06N3 G
IPP040N06N3 G
RDS(ON)=3.8mΩ
RDS(ON)=4.0mΩ
RDS(ON)=4.2mΩ
RDS(on) @VGS=10V TO-251 /
TO-251 SL
[mΩ]
TO-252
DPAK
CanPAK™
M-Can
TO-262
I2PAK
TO-263
D2PAK
TO-263
7 Pin
TO-220
TO-220
FullPAK
IPI028N08N3 G
IPB025N08N3 G
IPP028N08N3 G
RDS(ON)=4.8mΩ
RDS(ON)=2.8mΩ
RDS(ON)=2.5mΩ
RDS(ON)=2.8mΩ
RDS(ON)=2.8mΩ
IPD053N06N
IPI060N06N
IPB054N06N3 G
IPP052N06L3 G
IPA057N06N3 G
IPI037N08N3 G
IPB035N08N3 G
IPB030N08N3 G
IPP037N08N3 G
IPA037N08N3 G
RDS(ON)=5.3mΩ
RDS(ON)=6.0mΩ
RDS(ON)=5.4mΩ
RDS(ON)=5.2mΩ
RDS(ON)=5.7mΩ
RDS(ON)=3.5mΩ
RDS(ON)=3.0mΩ
3-4
RDS(ON)=3.7mΩ
IPD053N06N3 G
IPB057N06N
IPP057N06N3 G
BSC067N06LS3 G BSZ067N06LS3 G
IPD053N08N3 G
RDS(ON)=5.3mΩ
RDS(ON)=5.7mΩ
RDS(ON)=5.7mΩ
RDS(ON)=6.7mΩ
RDS(ON)=5.3mΩ
RDS(ON)=6.7mΩ
BSF077N06NT3 G
IPB081N06L3 G
IPP084N06L3 G
IPA093N06N3 G BSC076N06NS3 G BSZ076N06NS3 G
RDS(ON)=7.9mΩ
RDS(ON)=7.7mΩ
RDS(ON)=8.1mΩ
RDS(ON)=8.4mΩ
RDS(ON)=9.3mΩ
RDS(ON)=7.6mΩ
RDS(ON)=7.6mΩ
IPD088N06N3 G
IPB090N06N3 G
IPP093N06N3 G
BSC100N06LS3 G BSZ100N06LS3 G
RDS(ON)=8.8mΩ
RDS(ON)=9.0mΩ
RDS(ON)=9.3mΩ
RDS(ON)=10.0mΩ
IPD220N06L3 G
IPB230N06L3 G
IPP230N06L3 G
BSC110N06NS3 G BSZ110N06NS3 G
RDS(ON)=22.0mΩ
RDS(ON)=23.0mΩ
RDS(ON)=23.0mΩ
RDS(ON)=11.0mΩ
IPB260N06N3 G
IPP260N06N3 G
RDS(ON)=25.0mΩ
RDS(ON)=26.0mΩ
RDS(ON)=26.0mΩ
(RDS(on) typ.)
4-6
IPA028N08N3 G
RDS(ON)=3.7mΩ
RDS(ON)=3.7mΩ
BSB044N08NN3 G IPI057N08N3 G
IPB054N08N3 G
IPP057N08N3 G
IPA057N08N3 G
BSC047N08NS3 G
RDS(ON)=4.4mΩ
RDS(ON)=5.4mΩ
RDS(ON)=5.7mΩ
RDS(ON)=5.7mΩ
RDS(ON)=4.7mΩ
RDS(ON)=5.7mΩ
BSC057N08NS3 G
RDS(ON)=5.7mΩ
IPD079N06L3 G
IPD250N06N3 G
Bare Die
IPC302N08N3
RDS(ON)=6.0mΩ
11-30
S308
RDS(ON)=1.9mΩ
1-3
IPP060N06N
7-10
Super
SO8
IPB019N08N3 G
IPD048N06L3 G
5-7
OptiMOS™ 80V Normal Level 1)
Silicon Carbide
RDS(ON)=3.2mΩ
IPP037N06L3 G
RDS(ON)=10.0mΩ
RDS(ON)=11.0mΩ
IPI070N08N3 G
6-7
30-40
IPP070N08N3 G
RDS(ON)=7.0mΩ
RDS(ON)=6.7mΩ
RDS(ON)=7.0mΩ
IPD096N08N3 G
IPI100N08N3 G
IPB097N08N3 G
IPP100N08N3 G
IPA100N08N3 G
RDS(ON)=9.6mΩ
RDS(ON)=10.0mΩ
RDS(ON)=9.7mΩ
RDS(ON)=9.7mΩ
RDS(ON)=10.0mΩ
IPU135N08N3 G
IPD135N08N3 G
IPI139N08N3 G
IPB136N08N3 G
IPP139N08N3 G
BSC123N08NS3 G BSZ123N08NS3 G
RDS(ON)=13.5mΩ
RDS(ON)=13.5mΩ
RDS(ON)=13.9mΩ
RDS(ON)=13.6mΩ
RDS(ON)=13.9mΩ
RDS(ON)=12.3mΩ
7-11
11-20
IPB067N08N3 G
High Voltage
IPI032N06N3 G
RDS(ON)=3.2mΩ
RDS(ON)=12.3mΩ
BSC340N08NS3 G BSZ340N08NS3 G
RDS(ON)=34.0mΩ
IGBT
3-5
IPD031N06L3 G
RDS(ON)=3.1mΩ
RDS(ON)=34.0mΩ
IPD350N06L G
RDS(ON)=35.0mΩ
30-50
IPD400N06N G
RDS(ON)=40.0mΩ
IPD640N06L G
RDS(ON = 64.0mΩ
IPD800N06N G
Power ICs
50-80
RDS(ON) = 80.0mΩ
6V rated (RDS(on) also specified @ VGS=6V)
Packages
1)
38
39
TO-263
D2PAK
TO-263
7 Pin
TO-220
TO-220
FullPAK
Super
SO8
S308
(RDS(on) typ.)
IPI030N10N3 G IPB027N10N3 G IPB025N10N3 G IPP030N10N3 G IPA030N10N3 G
RDS(ON)=3.0mΩ RDS(ON)=2.7mΩ RDS(ON)=2.5mΩ RDS(ON)=3.0mΩ RDS(ON)=3.0mΩ
<3
IPC302N10N3
IPC26N10NR
IPB039N10N3 G
3-4
6-8
RDS(on) @VGS=10V TO-251 / TO-252 CanPAK™ CanPAK™ TO-262
TO-251 SL DPAK
M-Can
S-Can
I2PAK
[mΩ]
TO-263
7 Pin
TO-220
TO-220
FullPAK
Super
SO8
4-6
IPI045N10N3 G IPB042N10N3 G
IPP045N10N3 G IPA045N10N3 G BSC046N10NS3 G
IPP08CN10L G
BSC082N10LS G
RDS(ON)=4.5mΩ
RDS(ON)=8.0mΩ
RDS(ON)=8.2mΩ
RDS(ON)=4.6mΩ
IPD068N10N3 G
IPI072N10N3 G
BSC060N10NS3 G
RDS(ON)=6.8mΩ
RDS(ON)=7.2mΩ
RDS(ON)=6.0mΩ
8-12
BSC105N10LSF G
RDS(ON)=10.5mΩ
IPP072N10N3 G
BSC070N10NS3 G
IPP12CN10L G
RDS(ON)=7.0mΩ
RDS(ON)=12.0mΩ
IPI086N10N3 G IPB083N10N3 G
IPA086N10N3 G
RDS(ON)=8.6mΩ
RDS(ON)=8.6mΩ
RDS(ON)=8.3mΩ
BSC123N10LS G
12-18
IPP086N10N3 G
8-12
IPS12CN10L G
RDS(ON)=11.8mΩ
RDS(ON)=7.2mΩ
RDS(ON)=11.8mΩ RDS(ON)=8.2mΩ
(RDS(on) typ.)
RDS(ON)=6.2mΩ
RDS(ON)=4.5mΩ
RDS(ON)=4.5mΩ
Bare Die
IPP06CN10L G
RDS(ON)=5.6mΩ
RDS(ON)=4.2mΩ
S308
RDS(ON)=5.1mΩ
BSB056N10NN3 G
IPS118N10N G IPD082N10N3 G
RDS(ON)=8.6mΩ
BSC109N10NS3 G
RDS(ON)=12.3mΩ
IPP16CN10L G
BSC159N10LSF G
RDS(ON)=15.7mΩ
RDS(ON)=15.9mΩ
BSC205N10LS
RDS(ON)=10.9mΩ
12-18
TO-263
D2PAK
IPP05CN10L G
6-8
RDS(ON)=3.9mΩ
4-6
Bare Die
High Voltage
RDS(on) @VGS=10V TO-251 / TO-252 CanPAK™ CanPAK™ TO-262
TO-251 SL DPAK
M-Can
S-Can
I2PAK
[mΩ]
Applications
OptiMOS™ 100V Logic Level
Low Voltage
OptiMOS™ 100V Normal Level
IPD122N10N3 G
BSF134N10NJ3 G IPI126N10N3 G IPB123N10N3 G
IPP126N10N3 G IPA126N10N3 G
BSZ160N10NS3 G
RDS(ON)=12.2mΩ
RDS(ON)=13.4mΩ RDS(ON)=12.6mΩ RDS(ON)=12.3mΩ
RDS(ON)=12.6mΩ RDS(ON)=12.6mΩ
RDS(ON)=16.0mΩ
20-40
RDS(ON)=20.5mΩ
BSC265N10LSF G
RDS(ON)=26.5mΩ
BSC160N10NS3 G
18-20
IPI180N10N3 G
IPP180N10N3 G IPA180N10N3 G
RDS(ON)=18.0mΩ
RDS(ON)=18.0mΩ
RDS(ON)=18.0mΩ RDS(ON)=18.0mΩ
Silicon Carbide
RDS(ON)=16.0mΩ
IPD180N10N3 G
IPD25CN10N G**
RDS(ON)=25.0mΩ
20-40
IPD33CN10N G**
RDS(ON)=33.0mΩ
BSC440N10NS3 G BSZ440N10NS3 G
RDS(ON)=44.0mΩ RDS(ON)=44.0mΩ
40-80
IPD78CN10N G**
RDS(ON)=78.0mΩ
BSC750N10ND G
2 x 75
Power ICs
IGBT
RDS(ON)=75.0mΩ
Packages
** not 6V rated
40
41
IPB038N12N3 G
RDS(ON)=3.8mΩ
<4
4-5
7-8
10-13
TO-263
D2PAK
IPS110N12N3 G
RDS(ON)=11.0mΩ
TO-263
7 Pin
Super SO8
S308
Bare Die
(RDS(on) typ.)
IPB036N12N3 G
RDS(ON)=3.6mΩ
IPP041N12N3 G
RDS(ON)=4.1mΩ
IPI048N12N3 G
RDS(ON=4.8mΩ
IPP048N12N3 G
RDS(ON)=4.8mΩ
IPI076N12N3 G
RDS(ON)=7.6mΩ
IPP076N12N3 G
RDS(ON)=7.6mΩ
IPB144N12N3 G
RDS(ON)=14.4mΩ
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-263
7 Pin
TO-220
TO-220
FullPAK
Super SO8
S308
BSC077N12NS3 G
RDS(ON)=7.7mΩ
IPP147N12N3 G
RDS(ON)=14.7mΩ
30-40
BSC240N12NS3 G BSZ240N12NS3 G
RDS(ON)=24.0mΩ
RDS(ON)=24.0mΩ
20-25
IPI110N20N3 G
RDS(ON)=11.0mΩ
IPD320N20N3 G
RDS(ON)=32.0mΩ
IPI320N20N3 G
RDS(ON)=32.0mΩ
IPB107N20N3 G
RDS(ON)=10.7mΩ
IPP110N20N3 G
RDS(ON)=11.0mΩ
(RDS(on) typ.)
IPB107N20NA ***
RDS(ON)=10.7mΩ
IPP110N20NA ***
IPB320N20N3 G
RDS(ON)=32.0mΩ
IPP320N20N3 G
RDS(ON)=32.0mΩ
IPC302N20N3
RDS(ON)=11.0mΩ
BSC320N20NS3 G
RDS(ON)=32.0mΩ
BSC500N20NS3G
40-50
BSC190N12NS3 G
RDS(ON)=19.0mΩ
Bare Die
IPC300N20N3
10-20
IPP114N12N3 G
RDS(ON)=11.4mΩ
IPI147N12N3 G
RDS(ON)=14.7mΩ
RDS(on) @VGS=10V
[mΩ]
IPC302N12N3
IPC26N12N
IPI041N12N3 G
RDS(ON)=4.1mΩ
IPD110N12N3 G
RDS(ON)=11.0mΩ
13-20
TO-220
80-100
BSC900N20NS3 G BSZ900N20NS3 G
RDS(ON)=90.0mΩ
RDS(ON)=90.0mΩ
100-200
BSC12DN20NS3 G BSZ12DN20NS3 G
RDS(ON)=125.0mΩ RDS(ON)=125.0mΩ
200-300
BSC22DN20NS3 G BSZ22DN20NS3 G
RDS(ON)=225.0mΩ RDS(ON)=225.0mΩ
OptiMOS™ 150V Normal Level 1)
CanPAK™
M-Can
TO-262
I2PAK
TO-263
D2PAK
7-12
30-60
TO-220
TO-220
FullPAK
Super SO8
S308
IPC302N15N3
IPI075N15N3 G IPB072N15N3 G
RDS(ON)=7.5mΩ RDS(ON)=7.2mΩ
IPP075N15N3 G IPA075N15N3 G
RDS(ON)=7.5mΩ RDS(ON)=6.5mΩ
IPI111N15N3 G IPB108N15N3 G
RDS(ON)=11.1mΩ RDS(ON)=10.8mΩ
IPP111N15N3 G IPA105N15N3 G
RDS(ON)=11.1mΩ RDS(ON)=10.5mΩ
IPD200N15N3 G BSB165N15NZ3 G IPI200N15N3 G IPB200N15N3 G
RDS(ON)=20.0mΩ RDS(ON)=16.5mΩ RDS(ON)=20.0mΩ RDS(ON)=20.0mΩ
IPP200N15N3 G
RDS(ON)=20.0mΩ
IPI530N15N3 G IPB530N15N3 G
RDS(ON)=53.0mΩ RDS(ON)=53.0mΩ
IPP530N15N3 G
RDS(ON)=53.0mΩ
RDS(on) @VGS=10V
[mΩ]
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-263
7 Pin
TO-220
TO-220
FullPAK
Super SO8
S308
BSC190N15NS3 G
RDS(ON)=19.0mΩ
60-70
Bare Die
(RDS(on) typ.)
IPC302N25N3A ***
20-30
BSC360N15NS3 G
RDS(ON)=36.0mΩ
RDS(ON)=53.0mΩ
OptiMOS™ 250V Normal Level
10-20
BSB280N15NZ3 G
RDS(ON)=28.0mΩ
IPD530N15N3 G
Bare Die
(RDS(on) typ.)
IPB065N15N3 G
RDS(ON)=6.5mΩ
4-7
16-30
TO-263
7 Pin
IPD600N25N3 G
RDS(ON)=60.0mΩ
IPI200N25N3 G
RDS(ON)=20.0mΩ
IPB200N25N3 G
RDS(ON)=20.0mΩ
IPP200N25N3 G
RDS(ON)=20.0mΩ
IPI600N25N3 G
RDS(ON)=60.0mΩ
IPB600N25N3 G
RDS(ON)=60.0mΩ
IPP600N25N3 G
RDS(ON)=60.0mΩ
BSC600N25NS3 G
RDS(ON)=60.0mΩ
100-200
BSC16DN25NS3 G BSZ16DN25NS3 G
RDS(ON)=165.0mΩ RDS(ON)=165.0mΩ
400-500
BSZ42DN25NS3 G
RDS(ON)=425.0mΩ
IGBT
TO-252
DPAK
RDS(on) @VGS=10V
[mΩ]
Applications
TO-262
I2PAK
Low Voltage
TO-252
DPAK
Silicon Carbide
RDS(on) @VGS=10V TO-251 /
TO-251 SL
[mΩ]
OptiMOS™ 200V Normal Level
High Voltage
OptiMOS™ 120V Normal Level
BSC520N15NS3 G BSZ520N15NS3 G
RDS(ON)=52.0mΩ RDS(ON)=52.0mΩ
BSZ900N15NS3 G
80-90
Power ICs
RDS(ON)=90.0mΩ
8V rated (RDS(on) also specified @ VGS=8V)
*** part qualified for Automotive
Packages
1)
42
43
TSOP6
SOT-89
SC-59
SOT-23
SOT-323
SOT-363
Voltage
BSP317P
- 250
-20 / 20
4.0Ω, -0.43A, LL
BSP92P
12.0Ω, -0.26A, LL
BSS192P
12.0Ω, -0.19A, LL
BSR92P
11.0Ω, -0.14A, LL
SOT-89
SC-59
SOT-23
SOT-323
SOT-363
BSL215C
BSD235C
N: 140.0mΩ, 1.5A, SLL
N: 0.35Ω, 0.95A, SLL
P: 150.0mΩ, -1.5A, SLL
P: 1.2Ω, -0.53A, SLL
BSR316P
1.8Ω, -0.36A, LL
BSS83P
2.0Ω, -0.33A, LL
BSP170P
300.0mΩ, -1.9A, NL
BSS84P
8.0Ω, -0.17A, LL
-30 / 30
P: 150.0mΩ, -1.5A, LL
BSL308C
BSD356PC *
N:57.0mΩ, A, LL
N:350.0mΩ, 0.95A, LL
P:80.0mΩ, A, LL,
P:~560.0mΩ, ~0.73A, LL
-60 / 60
BSS84PW
8.0Ω, -0.15, LL
High Voltage
BSP613P
130.0mΩ, 2.9A, NL
N: 160.0mΩ, 1.4A, LL
BSP171P
300.0mΩ, -1.9A, LL
BSP315P
800.0mΩ, -1.17A, LL
BSR315P
800.0mΩ, -0.62A, LL
BSL303SPE *
~30.0mΩ, ~-6.6A, LL
BSR303PE *
~30.0mΩ, ~-3.3A, LL
BSP304PE *
~40.0mΩ, ~-5.5A, LL
BSL305SPE *
~50.0mΩ, ~-5.3A, LL
BSR305PE *
~50.0mΩ, ~-2.7A, LL
BSP306PE *
~60.0mΩ, ~-4.5A, LL
BSL307SP
43.0mΩ, -5.5A, LL
BSS308PE
80.0mΩ, -2.1A, LL, ESD
BSL308PE
80.0mΩ, -2.1A, LL,
dual, ESD
BSS314PE
140.0mΩ, -1.5A, LL,
ESD
BSL314PE
140.0mΩ, -1.5A, LL,
ESD, dual
BSS315P
150.0mΩ, -1.5A, LL
- 30
- 20
Silicon Carbide
P-Channel MOSFETs
- 60
Complementary
BSP322P
800.0mΩ, -1.0A, LL
BSP316P
1.8Ω, -0.68A, LL
TSOP6
BSL316C
BSP321P
900.0mΩ, -0.98A, NL
- 100
SOT-223
BSD314SPE
140.0mΩ, -1.5A, LL, ESD
BSL315P
150.0mΩ, -1.5A, LL, dual
BSS356PWE *
BSD356PE *
~560.0mΩ, ~0.73A, LL ~560.0mΩ, ~0.73A, LL
BSL207SP
41.0mΩ, -6A, SLL
BSS209PW
BSV236SP
550.0mΩ, -0.58A, SLL 175.0mΩ, -1.5A, SLL
BSL211SP
67.0mΩ, -4.7A, SLL
BSS223PW
1.2Ω, -0.39A, SLL
BSD223P
1.2Ω, -0.39A, SLL, dual
BSS215P
150.0mΩ, -1.5A, SLL
Power ICs
BSL215P
150.0mΩ, -1.5A, SLL,
dual
Low Voltage
SOT-223
IGBT
Voltage
Small Signal
Applications
Small Signal
Packages
* in developement
44
45
SOT-323
SOT-363
TSOP6
SOT-89
SC-59
SOT-23
BSR802N
BSP373
BSL373SN*
BSS169
22.0mΩ, 7.5A, ULL
23.0mΩ, 3.7A, ULL
300.0mΩ, 1.7A, NL
230.0mΩ, 2.0A, NL
12.0Ω, 0.09A, depl.
BSL202SN
BSR202N
BSP373N*
BSL372SN*
22.0mΩ, 7.5A, SLL
21.0mΩ, 3.8A, SLL
230.0mΩ, 2.0A, NL
220.0mΩ, 2.0A, LL
BSP372
310.0mΩ, 1.7A, LL
BSL296SN*
460.0mΩ, 1.4A, LL
BSL806N
BSS806N
BSD816SN
57.0mΩ, 2.3A, ULL
57.0mΩ, 2.3A, ULL
160.0mΩ, 1.4A, ULL
BSL205N
BSS205N
BSD214SN
50.0mΩ, 2.5A, SLL, dual
50.0mΩ, 2.5A, SLL
140.0mΩ, 1.5A, SLL
BSL207N
BSS816NW
BSD840N
70.0mΩ, 2.1A, SLL, dual
160.0mΩ, 1.4A, ULL
400.0mΩ, 0.88A, ULL, dual
BSL214N
BSS214N
BSS214NW
BSD235N
140.0mΩ, 1.5A, SLL, dual
140.0mΩ, 1.5A, SLL
140.0mΩ, 1.5A, SLL
350.0mΩ, 0.95A, SLL, dual
BSL302SN
BSR302N
25.0mΩ, 7.1A, LL
23.0mΩ, 3.7A, LL
100
6.0Ω, 0.19A, LL
BSP296
BSP123
BSS123
BSP123N
57.0mΩ, 2.3A, LL, dual
160.0mΩ, 1.4A, LL
160.0mΩ, 1.4A, LL
BSS670S2L
650.0mΩ, 0.54A, LL
BSP318S
BSL606SN*
BSS606N
BSR606N *
BSS138N
BSS138W
90.0mΩ, 2.6A, LL
60.0mΩ, 4.5A, LL
60.0mΩ, 2.3A, LL
60.0mΩ, 2.3A, LL
3.5Ω, 0.23A, LL
3.5Ω, 0.28A, LL
BSP320S
BSS7728N
120.0mΩ, 2.9A, NL
5.0Ω, 0.2A, LL
BSP295
SN7002N
SN7002W
300.0mΩ, 1.8A, LL
5.0Ω, 0.2A, LL
5.0Ω, 0.23A, LL
BSS123N
6.0Ω, 0.19A, LL
BSP297
200
1.8Ω, 0.66A, LL
BSP149
3.5Ω,0.14 A, depl.
240
BSP88
BSS87
BSS131
6.0Ω, 0.35A, 2.8V rated
6.0Ω, 0.26A, LL
14.0Ω, 0.1A, LL
BSP89
6.0Ω, 0.35A, LL
BSP129
2N7002
2N7002DW
3.0Ω, 0.3A, LL
3.0Ω, 0.3A, LL, dual
6.0Ω, 0.05A, depl.
BSS139*
250
30.0Ω, 0.03A, depl.
BSP298
8.0Ω, 0.13A, depl.
150.0mΩ, 2.5A, LL
BSS119N
230mΩ, 1.8A, LL
600.0Ω, 1.2A, LL
57.0mΩ, 2.3A, LL
BSD316SN
~160.0mΩ, 2.3A, LL
BSP372N*
6.0Ω, 0.37A, LL
BSS316N
BSL716N *
BSS119
BSP296N*
BSS306N
BSL306N
BSP718N *
SOT-323
700.0mΩ, 1.1A, LL
BSS159N
75
SOT-223
Voltage
BSL802SN
55
60
SOT-23
Applications
SC-59
High Voltage
30
SOT-89
Silicon Carbide
N-Channel MOSFETs
20
TSOP6
400
3.0Ω, 0.5A, NL
BSP324
25.0Ω, 0.17A, LL
500
600
BSP299
BSS127
4.0Ω, 0.4A, NL
500.0Ω, 0.023A, LL
BSP125
BSS225
45.0Ω, 0.12A, LL
45.0Ω, 0.09A, LL
IGBT
SOT-223
N-Channel MOSFETs
Voltage
Small Signal
Low Voltage
Small Signal
BSP135
60.0Ω, 0.02A, depl.
BSP300
20.0Ω, 0.19A, NL
NL = Normal Level
LL = Logic Level
SLL = Super Logic Level
ULL = Ultra Logic Level
to be used from VGS
10V
4.5V
2.5V
1.8V
Power ICs
800
Packages
* in developement
46
47
Naming System
P-Channel MOSFETs
TO-220
RDS(on) @ VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
BSC030P03NS3 G
3
IPD042P03L3 G
4,2
SPD50P03L G **
IPD068P03L3 G
5-7
BSC060P03NS3E G
BSO080P03NS3 G
BSO080P03NS3E G
BSO080P03S
BSO301SP
BSO130P03S
13
03
L
S
X
BSZ180P03NS3 G
BSO200P03S
BSO303SP
BSO303P (dual)
20
21
SPP80P06P
SPB80P06 G
SPD30P06P G
75
SPP18P06P
SPD18P06P G
SPB18P06P G
BSO613SPV G
E
G
SPP08P06P
SPD08P06P G
SPP15P10PL G
SPD15P10PL G
SPP15P10P G
SPD15P10P G
SPB08P06P G
SPD04P10PL G
850
RoHS compliant
Low Voltage
Features
F = fast switching
R = integrated gate
resistor
E = ESD protection
C = clean switching
e.g. IPD04xP03LE G
Technology Generation
I = Monolithic integrated
Schottky like diode
Package Options
SO-8 / SuperSO8 / S3O8
S = Single Chip
only valid for SO-8,
SuperSO8, S3O8
D = Dual Chip
only valid for SO-8,
SuperSO8, S3O8
RDS(ON) [mΩ]
Multiplied by 10, if last digit is
not defined, substitution by C,
e.g. 07C = 7mΩ class.
For chip products chip area
in mm2 multiplied by 10
CanPAK
Q = SQ or MQ footprint
X = SX or MX footprint
T = ST or MT footprint
P = MP footprint
N = N-Channel
P = P-Channel
C = Complementary
Breakdown Voltage divided by 10
E = Extended, +5V, e.g. E2 = 25V
SPD09P06PL G
250
BSC200P03LS G
Package Type
BSB = CanPAK™
(M Can)
BSC = SuperSO8
BSF = CanPAK™
(S Can)
BSO = SO-8
BSZ = S3O8
IPA = FullPAK
IPB = D2PAK
IPC = Chip Product
IPD = DPAK
IPI = I2PAK
IPP = TO-220
IPS = IPAK
Short Leads
BSC130P03LS G
18
- 100V
BSZ086P03NS3 G
BSZ086P03NS3E G
BSZ120P03NS3 G
1,2 Ω
D²PAK
X = xtra drain lead
Level
N = Normal Level
M = Logic Level 5V opt.
L = Logic Level
K = Super Logic Level
J = Ultra Logic Level
(NL) 10.0
(LL) 4.5
(ELL) 4.5
(SLL) 2.5
(ULL) 1.8
SPD04P10P G
1Ω
Complem.
BSC080P03LS G
BSC084P03NS3 G
BSC084P03NS3E G
12
240
N
BS0612CV G
-60/
11-30
60V
Power ICs
P-Channel MOSFETs
~8
210
014
High Voltage
BSO211P (dual)
67
300
BSC
Silicon Carbide
BSO207P (dual)
45
- 60V 130
CanPAK
IGBT
30
23
S3O8
BSO203SP
BSO203P (dual)
BSO204P (dual)
21
- 30V
SuperSO8
BSO201SP
7
- 20V
SO8
Applications
OptiMOSTM
BS0615C G
Packages
** 5-leg
48
49
BSC
N
0901
Applications
New OptiMOSTM 30V
X
Package Type
Consecutively Number
without any correlation
to product specification
Low Voltage
D = Dual
E = ESD
I = Monolithic integrated
Schottky like diode
S = Single
Channels
N = N-Channel
P = P-Channel
Enables 96% Efficiency Level in Server Power Supply
Y
J2
Z
Addional Features
E = ESD protected MOSFET
3 digits product identifier
meaning dependent on
product generation
Only present in following case
W = to distinguish SOT-323 from SOT-23
Only present in following case
S = Single (only for packages which
are also used for multichip products)
Polarity
N = N-channel
P = P-channel
C = Complementary
(N-Ch + P-Ch)
They are also a perfect choice for a broad range of industrial
applications like motor control, solar micro inverter and fast switching
DC/DC converter.
Key features and benefits of new OptiMOS™ 40V/60V
 Industry’s first 1mΩ 40V and 1.6mΩ 60V product in SuperSO8
 35% lower RDS(on) and 45% lower FOM than alternative devices
 Highest system efficiency and power density
 Monolithically integrated Schottky like diode for highest efficiency
Power ICs
“X” indicates the Package
D = SOT-363
P = SOT-223
R = SC59
S = SOT-89, SOT-23, SOT-323
L = TSOP-6
Infineon’s new OptiMOS™ 40V and 60V family is optimized for
synchronous rectification in Switched Mode Power Supplies (SMPS) such
as in servers and desktop PCs. These devices set highest standards in
power density and efficiency and reduce system costs at the same time.
Silicon Carbide
J1
IGBT
Small Signal
BSX
High Voltage
New OptiMOS™ 40V and 60V
Packages
For further information please visit our website:
[ www.infineon.com/newoptimos ]
50
51
CoolMOS™
CoolMOSTM
Gate
On state: Reduction of resistance of epitaxial layer by high doped n-columns
Higher doping level in n-type drift region results in lower RDS(on)
n+
nepi
p+
p
„
Blocking state: Compensation of additional charge by adjacent p-columns
Half of active chip area is covered by p-columns
„ During blocking state the p-column compensates the charge of the adjacent
n-column resulting in high breakdown voltage at an area specific on-resistance
below the silicon limit
Standard MOSFET
„
Source
Gate
n+
p+
nepi
Drain
C3 series:
„ Third series of CoolMOS™, market entry in 2001
„ The "working horse" of the portfolio, fast switching,
symmetrical rise/fall time @10 V Vgs, Vth 3 V, gfs
high, Rg very low
„ Design-in into all CoolMOS™ segments
CFD series:
„ Fourth series of CoolMOS™, market entry in 2004
„ Fast Body Diode, Qrr 1/10th of C3 series, Vth 4 V,
gfs high, Rg low
„ Specific for phase-shift ZVS and DC/AC power
applications
Source
CoolMOS™ technology
n+
Applications
CP series:
„ Fifth series of CoolMOS™, market entry in 2005
„ Ultra low RDS(on), ultra low gate charge, very fast
switching
„ Vth 3 V, gfs very high, internal Rg very low
S5 series:
„ First series of CoolMOS™, market entry in 1998
„ Slow switching, close to converter MOSFET,
Vth 4.5 V, gfs low, Rg high
„ Design-in in high power SMPS only
CE series:
„ Cost optimized platform for price sensitive applications such as PC Silverbox, Consumer and Lighting
„ Applicable in PFC, in LLC topologies in resonant
switching and in TTF topologies in Hard Switching
in PWM stage
Low Voltage
Benefits
„ Improved efficiency
„ More efficient, more compact, lighter and cooler
„ Outstanding reliability with proven CoolMOS™
quality combined with high body diode
ruggedness
Since the development of the innovative CoolMOS™ technology we help applications to meet the standby
power and Energy Efficiency regulations. CoolMOS™ is used for example in lighting applications where
Energy Efficiency is more than ever a pre-condition as well as in solar inverters of market leaders.
C6 / E6 series:
Sixth series of CoolMOS™, market entry 2009
„ Is the successor of C3
„
CFD2 series:
„ Seventh series of CoolMOS™, Market entry 2011
„ First 650V superjunction device, with Fast
Body Diode
„ Is the successor of CFD, suitable for resonant
topologies
High Voltage
Features
„ Offers a significant reduction of conduction and
switching losses
„ Enables high power density and efficiency for
superior power conversion systems
„ Best-in-class price/performance ratio
CoolMOS™ – a history
CFDA series:
„ First automotive qualified CoolMOS™ technology
with integrated Fast Body Diode
„ Optimized for resonant topologies in the automotive
field used e.g. for battery charging and DC/DC
converters
Silicon Carbide
The revolutionary CoolMOS™ power family sets new standards in the field of Energy Efficiency. As
technology leader in high voltage MOSFETs, CoolMOS™ offers a significant reduction of conduction
and switching losses and enables high power density and efficiency for superior power conversion
systems. Especially the latest, state-of-the-art generation of high voltage power MOSFETs made it
possible that AC/DC power supplies are more efficient, more compact, lighter and cooler than ever
before. This success was achieved by offering the lowest on-state resistance per package outline, the
fastest switching speed and the lowest gate driver requirements of high voltage MOSFETs commercially
available.
„
„
„
„
„
„
„
Adapter
PC Silverbox
Server
Telecom
Solar
UPS
HID lighting
Automotive
900V
C3
800V
C3
650V
C3
650V
C7
600V
CFD
600V
C3
600V
CP
500V
C3
2004
2006
650V
CFDA
650V
C6 / E6
500V
CP
2005
650V
CFD2
2007
2008
2009
2010
productive
500V
CE
2011
2012
under
development
Packages
2003
600V
C6 / E6
Power ICs
„
IGBT
Main Applications
52
53
This Fast Body Diode is the key for addressing resonant switching topologies resulting in lower
switching losses due to the low gate charge. The softer commutation behavior and therefore reduced
EMI appearance gives the CoolMOS™ CFDA series a clear advantage in comparison with competitor
parts. Furthermore, limited voltage overshoot during hard commutation of the body diode enables
easier implementation of layout and design.
The broad 650V CoolMOS™ CFDA portfolio provides all benefits of fast switching superjunction
MOSFETs fulfilling the enhanced reliability requirements for automotive applications realized with
special screening measures in Front End and Back End as well as the qualification according to AEC
Q101. Therefore, the new 650V CoolMOS™ CFDA technology is the best choice for resonant switching
topologies in Automotive applications.
TO-252
DPAK
TO-263
D2PAK
TO-220
660*
IPD65R660CFDA
IPB65R660CFDA
IPP65R660CFDA
420*
IPD65R420CFDA
Applications
Benefits
Increased safety margin due to higher
breakdown voltage
„ Reduced EMI appearance and easy to design in
„ Better light load efficiency
„ Lower switching losses
„ Higher switching frequency and/or higher duty
cycle possible
„ High quality and reliability
„
Features
„ First 650V Automotive qualified technology with
integrated Fast Body Diode on the market
„ Limited voltage overshoot during hard
commutation – self limiting di/dt and dv/dt
„ Low gate charge value Qg
„ Low Qrr at repetitive commutation on body diode &
low Qoss
„ Reduced turn on and turn off delay times
„ Compliant to AEC Q101 standard
Low Voltage
With the new 650V CoolMOS™ CFDA, Infineon launches its second generation of market leading
Automotive qualified high voltage CoolMOS™ MOSFET’s. In addition to the well-known attributes
of high quality and reliability required by the automotive industry, the new CoolMOS™ CFDA series
provides now also an integrated Fast Body Diode.
Limited voltage overshoot by CoolMOS™ CFDA during hard commutation of conducted body diode
TO-247
T=25°C; If=20A; Rg, d=5.6Ω; Ugs=13V
800
676V
310*
IPB65R310CFDA
IPP65R310CFDA
190*
IPB65R190CFDA
IPP65R190CFDA
IPW65R190CFDA
150*
IPB65R150CFDA
IPP65R150CFDA
IPW65R150CFDA
110*
IPB65R110CFDA
IPP65R110CFDA
IPW65R110CFDA
80*
IPW65R080CFDA
48*
IPW65R048CFDA
IPW65R080CFDA
Silicon Carbide
600
U[V]
RDS(on) [mΩ]
Applications
Unidirectional and bidirectional DC/DC converter
„ Battery charger
„ HID Lighting
„
High Voltage
650V CoolMOS™ CFDA
Comp2 600V
452V
400
200
Less Voltage Overshoot
0
„
200
t[µs]
300
400
500
Limited voltage overshoot due to soft commutation behavior of CFDA contributes to higher reliability
Significantly less voltage overshoot of CFDA compared to competition enables easier design in
Power ICs
„
100
IGBT
0
Packages
* in development
54
55
3000 9
1400 15
950 22
600 32
380 49
280 66
190 95
110 170
70 290
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
ID RDS(on) Qg
[A] [mΩ] [nC]
SPD02N50C3
SPD03N50C3
SPD04N50C3
SPD08N50C3
SPB04N50C3
SPI08N50C3
SPP04N50C3
SPA04N50C3
SPP08N50C3
SPA08N50C3
SPI12N50C3
SPB12N50C3
SPP12N50C3
SPA12N50C3
SPW12N50C3
SPI16N50C3
SPB16N50C3
SPP16N50C3
SPA16N50C3
SPW16N50C3
SPI21N50C3
SPB21N50C3
SPP21N50C3
SPA21N50C3
SPW21N50C3
6000
3000
1400
950
750
600
380
280
190
160
100
70
3.9
9.5
13
19
24
21
45
63
87
104.9
150
252
TO-252
DPAK
21
45
63
87
255
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
SPI07N65C3
SPP07N65C3
SPA07N65C3
SPI11N65C3
SPP11N65C3
SPA11N65C3
SPI15N65C3
SPP15N65C3
SPA15N65C3
SPI20N65C3
SPP20N65C3
SPA20N65C3
TO-247
SPW47N65C3
TO-251
IPAK
ID RDS(on) Qg
[A] [mΩ] [nC]
TO-251
IPAK SL
short leads
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
SPU01N60C3
SPS01N60C3
SPD01N60C3
SPU02N60C3
SPS02N60C3
SPD02N60C3
SPB02N60C3
SPP02N60C3
SPU03N60C3
SPS03N60C3
SPD03N60C3
SPB03N60C3
SPP03N60C3
SPA03N60C3
SPU04N60C3
SPS04N60C3
SPD04N60C3
SPB04N60C3
SPP04N60C3
SPA04N60C3
SPD06N60C3
SPU07N60C3
CoolMOS™ C3 800V
SPD07N60C3
SPI07N60C3
SPB07N60C3
SPI11N60C3
SPB11N60C3
SPI15N60C3
SPI20N60C3
SPB20N60C3
SPP06N60C3
SPA06N60C3
SPP07N60C3
SPA07N60C3
TO-247
SPP11N60C3
SPA11N60C3
SPW11N60C3
SPP15N60C3
SPA15N60C3
SPW15N60C3
SPP20N60C3
SPA20N60C3
SPW20N60C3
SPP24N60C3
2
2700
4
6
8
11
17
55
1300 20
900 27
650 40
450 50
290 91
85 288
SPW47N60C3
TO-251
IPAK SL
short leads
9
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
SPD02N80C3
SPP02N80C3
SPA02N80C3
SPD04N80C3
SPP04N80C3
SPA04N80C3
SPD06N80C3
SPP06N80C3
SPA06N80C3
SPP08N80C3
SPA08N80C3
SPB11N80C3
SPP11N80C3
SPA11N80C3
SPW11N80C3
SPB17N80C3
SPP17N80C3
SPA17N80C3
SPW17N80C3
SPI08N80C3
SPW55N80C3
CoolMOS™ C3 900V
SPW24N60C3
SPW35N60C3
TO-251
IPAK
High Voltage
SPW52N50C3
Silicon Carbide
0.8
1.8
3.2
4.5
6.2
7.3
11
15
20.7
24.3
34.6
47
600
380
280
190
70
TO-251
IPAK SL
short leads
SPW32N50C3
CoolMOS™ C3 600V
ID RDS(on) Qg
[A] [mΩ] [nC]
7.3
11
15
20.7
47
TO-251
IPAK
Applications
TO-251
IPAK SL
short leads
ID RDS(on) Qg
[A] [mΩ] [nC]
5.1 1200
29
TO-251
IPAK SL
short leads
TO-252
DPAK
IPD90R1K2C3
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
IPI90R1K2C3
IPP90R1K2C3
IPA90R1K2C3
IPW90R1K2C3
IPI90R1K0C3
IPP90R1K0C3
IPA90R1K0C3
IPW90R1K0C3
IPI90R800C3
IPP90R800C3
IPA90R800C3
IPW90R800C3
IPI90R500C3
IPP90R500C3
IPA90R500C3
IPW90R500C3
IPP90R340C3
IPA90R340C3
IPW90R340C3
IPI90R340C3
IPB90R340C3
IPW90R120C3
Packages
5.7 1000 34
6.9 800 42
11 500 68
15 340 93
36 120 260
TO-251
IPAK
IGBT
1.8
3.2
4.5
7.6
11.6
16
21
32
52
TO-251
IPAK
Power ICs
ID RDS(on) Qg
[A] [mΩ] [nC]
CoolMOS™ C3 650V
Low Voltage
CoolMOS™ C3 500V
56
57
IPD50R520CP
IPD50R399CP
TO-220
TO-220
FullPAK
TO-247
ID RDS(on) Qg
[A] [mΩ] [nC]
IPP50R520CP
IPA50R520CP
IPI50R399CP
IPP50R399CP
IPA50R399CP
IPW50R399CP
IPI50R350CP
IPP50R350CP
IPA50R350CP
IPW50R350CP
ID RDS(on) Qg
[A] [mΩ] [nC]
1.5
3
4.3
5
6
7.6
9.8
13
18.5
3000
1400
950
800
650
500
380
280
190
TO-251
IPAK
TO-251
IPAK SL
short leads
IPI50R299CP
IPB50R299CP
IPP50R299CP
IPA50R299CP
IPW50R299CP
IPI50R250CP
IPB50R250CP
IPP50R250CP
IPA50R250CP
IPW50R250CP
IPI50R199CP
IPB50R199CP
IPP50R199CP
IPA50R199CP
IPW50R199CP
IPI50R140CP
IPB50R140CP
IPP50R140CP
IPA50R140CP
IPW50R140CP
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
IPD50R3k0CE
IPD50R1k4CE
IPD50R950CE
IPA50R950CE
IPD50R800CE
IPA50R800CE
IPD50R650CE
2.4
3.2
4.4
7.3
8.1
10.6
13.8
20.2
23.8
30
38
57.7
53.5
77.5
2000
1400
950
600
520
380
280
190
160
125
99
74
70
41
600
520
385
299
250
199
165
125
99
75
45
21
24
17 IPL60R385CP
22 IPL60R299CP
26
32 IPL60R199CP
39
53
60
86
150
TO-251
IPAK
TO-251
IPAK SL
short leads
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
IPU60R2K0C6
IPD60R2K0C6
IPD60R1K4C6
IPP60R1K4C6
IPD60R950C6
IPB60R950C6
IPP60R950C6
IPA60R950C6
IPD60R600C6
IPB60R600C6
IPP60R600C6
IPA60R600C6
IPP60R520C6
IPA60R520C6
IPD60R520C6
IPD60R380C6
IPI60R380C6
IPB60R380C6
IPP60R380C6
IPA60R380C6
IPI60R280C6
IPB60R280C6
IPP60R280C6
IPA60R280C6
IPW60R280C6
IPI60R190C6
IPB60R190C6
IPP60R190C6
IPA60R190C6
IPW60R190C6
IPB60R160C6
IPP60R160C6
IPA60R160C6
IPW60R160C6
IPB60R125C6
IPP60R125C6
IPA60R125C6
IPW60R125C6
IPB60R099C6
IPP60R099C6
IPA60R099C6
IPW60R099C6
IPP60R074C6
IPW60R070C6
IPW60R041C6
IPA50R650CE
IPD50R500CE
IPP50R500CE
IPA50R500CE
IPD50R380CE
IPP50R380CE
IPA50R380CE
IPD50R280CE
IPP50R280CE
IPA50R280CE
IPW50R280CE
IPP50R190CE
IPA50R190CE
IPW50R190CE
TO-252
DPAK
TO-262
I2PAK
CoolMOS™ E6 600V
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
IPD60R600CP
IPI60R600CP
IPB60R600CP
IPP60R600CP
IPA60R600CP
IPD60R520CP
IPI60R520CP
IPB60R520CP
IPP60R520CP
IPA60R520CP
IPD60R385CP
IPI60R385CP
IPB60R385CP
IPP60R385CP
IPA60R385CP
TO-247
IPI60R299CP
IPB60R299CP
IPP60R299CP
IPA60R299CP
IPW60R299CP
IPI60R250CP
IPB60R250CP
IPP60R250CP
IPA60R250CP
IPW60R250CP
IPI60R199CP
IPB60R199CP
IPP60R199CP
IPA60R199CP
IPW60R199CP
IPI60R165CP
IPB60R165CP
IPP60R165CP
IPA60R165CP
IPW60R165CP
IPI60R125CP
IPB60R125CP
IPP60R125CP
IPA60R125CP
IPI60R099CP
IPB60R099CP
IPP60R099CP
ID RDS(on) Qg
[A] [mΩ] [nC]
TO-251
IPAK
TO-251
IPAK SL
short leads
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
5.7
750 17.2
IPD60R750E6
IPP60R750E6
IPA60R750E6
7.3
8.1
9.2
10.6
13.8
20.2
600 20.5
520 23.5
450 28
380 32
280 43
190 63
IPD60R600E6
IPP60R600E6
IPA60R600E6
IPD60R450E6
TO-247
IPP60R520E6
IPA60R520E6
IPP60R450E6
IPA60R450E6
IPP60R380E6
IPA60R380E6
IPP60R280E6
IPA60R280E6
IPW60R280E6
IPP60R190E6
IPA60R190E6
IPW60R190E6
IPW60R125CP
IPW60R099CP
IPW60R075CP
IPW60R045CP
Packages
6.1
6.8
9
11
12
16
21
25
31
39
60
ThinPAK
8x8
TO-252
DPAK
IPD60R3K3C6
6.7
9.4 IPU60R1K4C6
13 IPU60R950C6
20.5 IPU60R660C6
23.4
32
43
58
75
96
119
131
170
290
CoolMOS™ CP 600V
ID RDS(on) Qg
[A] [mΩ] [nC]
TO-251
IPAK SL
short leads
1.7 3300 4.7
CoolMOS™ CE 500V
ThinPAK
8x8
TO-251
IPAK
Low Voltage
IPS50R520CP
TO-263
D2PAK
TO-262
I2PAK
High Voltage
13
17
19
23
27
34
48
TO-252
DPAK
Silicon Carbide
520
399
350
299
250
199
140
TO-251
IPAK SL
short leads
IGBT
7.1
9
10
12
13
17
23
TO-251
IPAK
Power ICs
ID RDS(on) Qg
[A] [mΩ] [nC]
Applications
CoolMOS™ C6 600V
CoolMOS™ CP 500V
58
59
TO-251
IPAK SL
short leads
TO-252
DPAK
TO-263
D2PAK
TO-262
I2PAK
TO-220
TO-220
FullPAK
TO-247
ID RDS(on) Qg
[A] [mΩ] [nC]
7.3
600
23
IPD65R600C6
IPI65R600C6
IPB65R600C6
IPP65R600C6
IPA65R600C6
6.6
700
35
10.6
13.8
16.1
20.7
38
57.7
47
83.2
380
280
250
190
99
74
70
37
39
45
44
87
127
138
255
330
IPD65R380C6
IPI65R380C6
IPB65R380C6
IPP65R380C6
IPA65R380C6
IPI65R280C6
IPB65R280C6
IPP65R280C6
IPA65R280C6
11
13.4
20.7
21.7
34.1
46
440
330
220
185
115
80
48
63
95
110
163
248
IPW65R280C6
IPD650R250C6
IPI65R190C6
IPB65R190C6
IPP65R190C6
IPA65R190C6
IPW65R190C6
IPI65R099C6
IPB65R099C6
IPP65R099C6
IPA65R099C6
IPW65R099C6
IPP65R074C6
TO-251
IPAK SL
short leads
TO-252
DPAK
TO-263
D2PAK
TO-262
I2PAK
TO-220
TO-220
FullPAK
TO-247
SPP07N60CFD
SPA07N60CFD
SPW07N60CFD
SPI11N60CFD
SPP11N60CFD
SPA11N60CFD
SPW11N60CFD
SPI15N60CFD
SPP15N60CFD
SPA15N60CFD
SPW15N60CFD
SPI20N60CFD
SPP20N60CFD
SPA20N60CFD
SPW20N60CFD
SPP24N60CFD
SPW24N60CFD
SPW35N60CFD
SPW47N60CFD
IPW65R070C6
ThinPAK
8x8
CoolMOS™ CFD2 650V
ID RDS(on) Qg
[A] [mΩ] [nC]
TO-251
IPAK
TO-251
IPAK SL
short leads
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
7.3
600
23
IPD65R600E6
IPP65R600E6
IPA65R600E6
10.6
13.8
16.1
20.2
380
280
250
190
39
45
44
73
IPD65R380E6
IPP65R380E6
IPA65R380E6
IPP65R280E6
IPA65R280E6
IPW65R280E6
IPP65R190E6
IPA65R190E6
IPW65R190E6
IPD65R250E6
ThinPAK
8x8
TO-251
IPAK
TO-251
IPAK SL
short leads
tbd 1400 tbd
tbd
6.0
8.7
11.4
17.5
tbd
31.2
43.3
68
950
660
420
310
190
150
110
80
41
tbd
20
32
41
68
tbd
118
162
300
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
High Voltage
IPW65R037C6
CoolMOS™ E6 650V
ID RDS(on) Qg
[A] [mΩ] [nC]
TO-251
IPAK
Applications
TO-251
IPAK
IPD65R1K4CFD*
IPD65R950CFD*
IPL65R660CFD
IPD65R660CFD
IPI65R660CFD
IPB65R660CFD
IPP65R660CFD
IPA65R660CFD
IPW65R660CFD
IPL65R420CFD
IPD65R420CFD
IPI65R420CFD
IPB65R420CFD
IPP65R420CFD
IPA65R420CFD
IPW65R420CFD
IPL65R310CFD
IPI65R310CFD
IPB65R310CFD
IPP65R310CFD
IPA65R310CFD
IPW65R310CFD
IPL65R190CFD
IPI65R190CFD
IPB65R190CFD
IPP65R190CFD
IPA65R190CFD
IPW65R190CFD
IPI65R150CFD
IPB65R150CFD
IPP65R150CFD
IPA65R150CFD
IPW65R150CFD
IPI65R110CFD
IPB65R110CFD
IPP65R110CFD
IPA65R110CFD
IPW65R110CFD
IPW65R080CFD
Silicon Carbide
ID RDS(on) Qg
[A] [mΩ] [nC]
CoolMOS™ CFD 600V
Low Voltage
CoolMOS™ C6 650V
IPW65R041CFD
CoolMOS™ CFDA 650V
TO-251
IPAK SL
short leads
TO-252
DPAK
660*
IPD65R660CFDA
420*
310*
190*
150*
110*
80*
48*
IPD65R420CFDA
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
IGBT
TO-251
IPAK
IPB65R660CFDA
IPP65R660CFDA
IPB65R310CFDA
IPP65R310CFDA
IPB65R190CFDA
IPP65R190CFDA
IPW65R190CFDA
IPB65R150CFDA
IPP65R150CFDA
IPW65R150CFDA
IPB65R110CFDA
IPP65R110CFDA
IPW65R110CFDA
IPW65R080CFDA
Power ICs
ID RDS(on) Qg
[A] [mΩ] [nC]
IPW65R048CFDA
Packages
* in development
60
61
Naming System
C
3
Company
S = Formerly Siemens
Specifications
C3 = CoolMOSTMC3
S5 = CoolMOSTMS5
Device
P = Power MOSFET
Breakdown Voltage
Divided by 10 (60 x 10 = 600V)
Package Type
A = TO-220 FullPAK
B = TO-263 (D2PAK)
D = TO-252 (DPAK)
I = TO-262 (I2PAK)
N = SOT-223
P = TO-220
U = TO-252 (IPAK)
W = TO-247
Technology
N = N-Channel Transistors
Continuous Drain Current
(@ TC = 25°C) [A]
Power MOSFETs (naming system from 2005 onwards)
I
P
P
60
R
099
C
P
Company
I = Infineon
Series Name
in this case CoolMOSTMCP for
PFC and PWM applications
Device
P = Power MOSFET
RDS(on) [mΩ]
Package Type
A = TO-220 FullPAK
B = TO-263 (D2PAK)
D = TO-252 (DPAK)
I = TO-262 (I2PAK)
L = ThinPAK 8x8
N = SO-T223
P = TO-220
U = TO-252 (IPAK)
W = TO-247
R = RDS(on)
Breakdown Voltage
Divided by 10 (60 x 10 = 600V)
Low Voltage
60
500V CoolMOS™ CE
High Voltage
N
The new Market Leading Generation of Superjunction MOSFETs
As technology leader in high voltage MOSFETs, Infineon now launches a new
generation of high voltage MOSFETs, reaching price driven markets such as
PC Silverbox, Consumer and Lighting.
Silicon Carbide
20
500V CoolMOS™ CE is a price-performance optimized platform enabling to
target cost sensitive applications in Consumer and Lighting markets by still
meeting highest efficiency standards. The new series provides all benefits of
a fast switching Superjunction MOSFET while not sacrificing ease of use and
offering the best cost down performance ratio available on the market.
Key features and benefits of 500V CoolMOS™ CE
Easy control of switching behaviour
 High body diode ruggedness
 Improved light load efficiency
 Outstanding reliability with proven CoolMOS™ quality
 Reduced reverse recovery charge (Qrr) and gate charge (Qg)
 Price-Performance optimized 500V design
IGBT
P

Power ICs
P
Packages
S
Applications
Power MOSFETs (naming system until 2005)
For further information please visit our website:
[ www.infineon.com/ce ]
62
63
Silicon Carbide
Features
„ Benchmark switching behavior
„ No reverse recovery charge
„ Temperature independent switching behavior
„ High operating temperature (Tj max 175°C)
Applications
Server
„ Telecom
„ Solar
„ UPS
„ PC Silverbox
„ Motor Drives
„ Lighting
„
2
0
-2
-4
-6
T=125°C, VDC=400V, IF=6A, di/dt=200 A/µs
-8
0.1
0.13
0.16
0.19
0.22
Improved system efficiency (PFC in CCM Mode operation,
full load, lovw line)
The fast switching characteristics of the SiC diodes
provide clear efficiency improvements at system level.
The performance gap between SiC and high-end silicon
devices increases with the operating frequency.
Efficiency [%]
94.5
94.0
93.5
93.0
92.5
IFX SiC 6A
Comp. 1 6A
Comp. 2 6A
91.5
60
20
15
Applications
rre
nt
cu
rg e
su
Combined
characteristics
Bipolar pn diode
forward characteristic
10
5
0
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
VF (V)
wire bond
AI
Merged pn-structure and improved surge capability
In standard operation the device behaves like a pure
SBD, but at high current levels a bipolar component is
activated: the much lower voltage drop dramatically
reduces the power dissipation at high current peaks
and accordingly the risks for thermal runaway.
Schottky diode
forward characteristic
p+
passivation
Ti
p+
p+
p+
p+
p+
termination
epi layer
field stop layer
SiC substrate
backside metalization
120
180
Switchting Frequency [kHz]
240
Silicon Carbide
The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance
for any given current rating, which further enhances overall system efficiency, especially at higher
switching frequencies and under low load conditions. The Generation 3 is based on the same technology
platform as Generation 2 with the introduction, at package level, of the so called diffusion soldering.
Diffusion soldering and improved thermal performance
Diffusion soldering is a proprietary Infineon process
reducing dramatically the thickness of the solder
between chip and lead frame with respect to standard
soft soldering. It results into ~40% lower Rthjc per
same unit Area.
thinQ!™ 1200V
The 1200V is the highest voltage family of Infineon SiC Schottky discrete diodes and is now being
extended with the TO-247 package. The very good thermal characteristics of the TO-247 in combination
with the low Vf of the 1200V diodes make it particularly suitable in power applications where relatively
high currents are demanded and utmost efficiency is required. With the introduction of this package,
Infineon now offers a current capability of up to 30A in the 1200V range.
Packages
91.0
Reverse recovery charge of SiC versus Silicon devices
The majority carrier characteristics of the device imply
no reverse recovery charge and the only contribution to
the switching losses comes from the tiny displacement
charge of capacitive nature. In the same voltage range,
Silicon devices show a bipolar component resulting in
much higher switching losses. Here the comparison for
600V devices.
0.25
95.0
92.0
25
IGBT
4
-10
0.07
30
Power ICs
SiC Schottky diode: SDB06S60
Si pin double diode (2*300V)
Ultrafast Si pin diode
6
35
thinQ!™ Generation 3 600V
10
8
Benefits
„ System efficiency improvement compared to Si
diodes
„ Reduced cooling requirements
„ Enabling higher frequency/increased power
density
„ Higher system reliability due to lower operating
temperature
„ Reduced EMI
40
Low Voltage
The differences in material properties between SiC and silicon limit the fabrication of practical silicon
unipolar diodes (Schottky diodes) to a range up to 100V – 150V, with relatively high on-state resistance
and leakage current. On the other hand, SiC Schottky barrier diodes (SBD) can reach a much higher
breakdown voltage; Infineon offers products up to 1200V as discrete and up to 1700V in modules.
The second generation of Infineon SiC Schottky
diodes has emerged over the years as the industry
standard. The low Vf values characterizing this
family of products, make it particularly suitable
for applications requiring high load efficiency.
With the Generation 2 Infineon introduced a new
design concept consisting in regularly distributed
p-doped areas, in conjunction with the pure
Schottky ones: the so-called “merged
pn-structure” (MPS).
High Voltage
Silicon Carbide Schottky Diodes
thinQ!™ Generation2 600V
IF (A)
Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which
offers a number of attractive characteristics for high voltage power semiconductors when compared
to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal
conductivity of SiC allow creating devices which outperform by far the corresponding Si ones, and
enable reaching otherwise unattainable efficiency levels.
64
65
Benefits
„ Reduced cooling effort due to reduced losses
„ Increase of the operating frequency with
consequent shrink of passive components and
savings at system level
„ Increased power density
„ Increase of output power and reduction of
specific system cost
+5V to SGND
VCC1
JFDrv
CVCC
VCC2
SGND
Controller
GND1
MDrv
IN
VReg
EN
CLJFG
CVReg
CVEE2
VEE2
-25V to VCC2
BSEN
Source cascode
1EDI30J12CL/CP
1600
1400
SiC Schottky barrier diode
1200
Body diode SiC JFET
1000
800
600
400
200
0
0
5
10
15
20
25
30
Silicon Carbide
1)
The monolithically integrated body diode has been explicitly
optimized to provide a benchmarking switching performance.
This decision accounts for the possibility of exploiting the
ohmic characteristics of the SiC JFET also in reverse operation
with the adoption of a synchronous rectification driving
scheme: the relatively high voltage drop of the body diode
can be in fact significantly reduced by turning-on the
JFET channel in parallel. With such a driving scheme the
conduction losses of the diode are negligible, as they play
a role only within a very short dead time between turn-off of
the channel and commutation of the body diode.
High Voltage
CoolSiC JFET Monolithically Integrated Body Diode and Synchronous Rectification
Applications
„ Solar
„ UPS
„ Industrial Drives
Direct measurements in a Three-phase string Inverter (Sunny Tripower by SMA) Pout max 17kW fsw=16kHz
Drain cascode
Turn on switching energy [uJ]
Features
„ Extremely low and temperature independent
switching losses
„ Reduced conduction losses at light load with
respect to IGBT technologies
„ Monolithically integrated body diode
„ Dedicated driver for direct JFET control
„ High reliability due to missing gate oxide
„ Structural elements similar to SiC diodes, with
10 year IFX proved experience in manufacturing
Applications
The Infineon approach to SiC switches consists of a simple
and safe driver circuit design based on a dedicated driver IC
that directly drives both the CoolSiC JFET and the LV p-channel
MOSFET, as indicated in the picture on the right. The main
features of the unique SiC direct drive approach are:
„ A low-voltage Si MOSFET is used to insure safe off-state
during start up or system failure. During normal operation,
the LV MOSFET is turned-on and acts like a small resistance
„ A dedicated driver IC operating both normally-on JFET
and p-MOS --> enabling a normally-off behavior and best
controllability of the JFET
Low Voltage
The new CoolSiC 1200V SiC JFET family, in combination with the proposed Direct Drive Technology,
represents Infineon’s leading edge solution to bring actual designs towards new and so far
unattainable efficiency borders. In fact the SiC JFET consistently reduces the switching losses with
respect to the available IGBT based Silicon devices and even the conduction losses when its ohmic
characteristics are fully exploited. Utmost efficiency at highest power density levels can be reached
also thanks to Infineon CoolSiC monolithically integrated body diode, showing a switching performance
comparable with that of an external SiC Schottky barrier diode. The Infineon SiC JFET, with its ultrafast
body diode and dedicated driver, represents the best solution in solar, UPS and industrial drives
applications by combining best performance, reliability, safety and ease of use.
SiC JFET
Infineon Direct Drive Technology
LV MOSFET
CoolSiC 1200V SiC JFET & Direct Drive Technology
35
Load current [A]
0,990
0,985
CoolSiC 1200V JFET portfolio and recommended driver / LV MOS for Direct Drive Topology
0,975
0,970
0,960
Si IGBT
SiC JFET
0,955
0,950
0,945
0,940
0,05
RDS(on)
Voltage
0,965
0,15
0,25
0,35
0,45
0,55
0,65
0,75
0,85
0,95
Measured system efficiencies at
optimum operation point
P / nP
1200
1200
35
50
70
100
70
100
Sales name
IJW120R035T1
IJW120R050T1
IJW120R070T1
IJW120R100T1
IJC120R070T1
IJC120R100T1
JFET Package
Driver
Driver Package
LV MOS
TO247
TO247
TO247
TO247
Bare die
Bare die
1EDI30J12CL/CP
1EDI30J12CL/CP
1EDI30J12CL/CP
1EDI30J12CL/CP
1EDI30J12CL/CP
1EDI30J12CL/CP
DSO-16-20/19-4
DSO-16-20/19-4
DSO-16-20/19-4
DSO-16-20/19-4
DSO-16-20/19-4
DSO-16-20/19-4
BSC030P03NS3 G
BSC030P03NS3 G
BSC030P03NS3 G
BSC030P03NS3 G
IPC099P03N
IPC099P03N
LV MOS Package
SuperSO8
SuperSO8
SuperSO8
SuperSO8
Bare die
Bare die
IGBT
Efficiency
0,980
Power ICs
Further information on the JFET driver available on page 107
Measured system efficiencies at several DC
link voltages (400V up to 800V)
G. Deboy, H. Ludwig, R. Mallwitz, R. Rupp, „New SiC JFET with Integrated Body Diode Boosts Performance of Photovoltaic Systems” Proc. PCIM, May 2011
Packages
1)
66
67
Qc IF SM
[nC] [A]
2
3
4
5
6
8
10
12
16
3.2
5
8
12
15
19
24
30
38
TO-252
DPAK
11.5
16
32 IDD04S60C
42
49
59
84
98
118
TO-263
D2PAK
TO-220
real2pin
TO-220
FullPAK
IDV03S60C
IDB06S60C
IDV04S60C
IDH05S60C
IDV05S60C
IDH06S60C
IDV06S60C
IDH08S60C
IDB10S60C
TO-252
DPAK
TO-263
D2PAK
2
5
8
10
15
20
30
IDV02S60C
IDH04S60C
IF
[A]
IDH10S60C
TO-220
real2pin
TO-247
IDH02SG120
IDH05S120
IDH08S120
IDH10S120
IDW10S120
IDH15S120
IDW15S120
Low Voltage
IF
[A]
Applications
1200V Silicon Carbide High Voltage Schottky Diodes thinQ!™
600V Silicon Carbide High Voltage Schottky Diodes thinQ!TM G2
IDW20S120
IDW30S120
IDH12S60C
IDH16S60C
IF
[A]
3.2
4.5
6
8
12
15
16
19
11.5 IDD03SG60C
18
26
32
42
49
51
59
TO-263
D2PAK
TO-220
real2pin
IDH03SG60C
IDD04SG60C
IDH04SG60C
IDD05SG60C
IDH05SG60C
IDD06SG60C
IDH06SG60C
IDD08SG60C
IDH08SG60C
IDD09SG60C
IDH09SG60C
IDD10SG60C
IDH10SG60C
IDD12SG60C
IDH12SG60C
TO-220
FullPAK
35
50
70
100
TO-252
DPAK
TO-263
D2PAK
TO-220
real2pin
TO-247
IJW120R035T1
IJW120R050T1
IJW120R070T1
IJW120R100T1
Packages
Power ICs
IGBT
3
4
5
6
8
9
10
12
TO-252
DPAK
Qc IF SM
[nC] [A]
RDS(on)
Silicon Carbide
600V Silicon Carbide High Voltage Schottky Diodes thinQ!TM G3
High Voltage
1200V CoolSiC JFET
68
69
Naming System
Naming System
I
D
H
X
S
G
X
Applications
thinQ!™ Silicon Carbide Schottky diodes
C
Specifications
C = Surge current stable
Package Type
D = DPAK
H = TO-220 real 2 pin
B = D2PAK
D = DPAKH = TO-220
V = TO-220FP
W = TO-247
G= low thermal resistance
Technology
S = SiC Diode
Continuous Drain Current
(@ TC = 25°C) [A]
120
R
XXX
T1
Series name
RDS(on) [mΩ]
Device
J = JFET
R = RDS(on)
Package Type
W = TO-247
Breakdown Voltage
120 = 1200V
Infineon’s 650V CoolMOS™ CFD2
– market leading technology with integrated fast body diode
 World’s lowest area specific on-state resistance (Ron * A)
 Softer commutation behavior and therefore better EMI behavior
 Best fit for applications such as telecom, server, battery charging, solar,
HID lamp ballast, LED lighting
Silicon Carbide
W
Infineon’s OptiMOS™ 60-150V in CanPAK™
You CanPAK™ more performance in your design
 Top-side cooling - best thermal behaviour
 Highest efficiency and power density
 Best fit for applications like DC-DC conversters for telecom,
voltage regulation, solar micro inverters and synchronous rectification
IGBT
Company
I = Infineon
J
We are the Leader in
Energy Efficiency Technologies
Being the Leader in Energy Efficiency Technologies, Infineon’s products are enormously
important for future energy supplies in terms of both exploiting renewables and using
energy efficiently. Explore our wide offer of high-end products for your application:
CoolSiC Silicon Carbide JFET
I
Low Voltage
Breakdown Voltage
60 = 600V
120 = 1200V
High Voltage
Device
D = Diode
Infineon’s RC-Drives Fast IGBTs – drive high-frequency inverter for comfortable quietness
 Smooth switching performance leading to low EMI levels
 Optimized Eon, Eoff and Qrr for low switching losses
 Best fit for applications in domestic and industrial drives like compressors,
pumps and fans
Power ICs
Company
I = Infineon
Packages
CoolSiC 1200V SiC JFET & Direct Drive Technology
 Leading edge technology for utmost efficiency
 Best solution combining performance, reliability, safety and ease of use.
 Best fit for applications like solar, UPS and Industrial Drives
For further information please visit our website:
70
[ www.infineon.com/power_management_new_products ]
71
IGBT
Benefits
IGBTs offer much higher current density than MOSFET power switches due to bipolar action
„ Insulated gate allows bipolar performance with MOSFET gate drive performance
„ High efficiency = smaller heat sink which leads to lower overall system cost
„ 175°C Tj(max) leading to higher reliability
Soft Switching/Resonant and Hard Topologies are Comprehensively Supported
Applications
We are famous for IGBT technology leadership and offer a comprehensive portfolio for the general
purpose inverters, solar inverters, UPS, Induction heating, Microwave Oven, Rice cookers, Welding and
SMPS segments.
Infineon has a huge portfolio addressing the following two switching techniques:
Soft Switching/resonant
The world famous IHW series IGBTs – #1 best selling family worldwide
„ Available in 600V, 1100V, 1200V, 1350V and 1600V voltage classes
„ Best in class efficiency and robustness
„
Low Voltage
„
Hard Switching
600V RC-D IGBTs
„ 600V RC-Drives Fast
„ 600V TRENCHSTOP™ DuoPack IGBTs
„ 600V/1200V HighSpeed 3
„ 1200V TRENCHSTOP™2
For IGBT usage, applications are divided into two switching techniques
Switching frequency is the main selection criteria of IGBT
DC Current
(max)
MOSFETS
IGBTs
high
Low
Frequency
Applications
Medium
Frequency
Applications
High
Frequency
Applications
(eg. drives,
induction
cooking)
(eg. UPS)
(eg. SMPS,
lamp ballast)
Applications using
soft switching/resonant technique
Applications using
hard switching technique
Inverterised Microwave Oven
Inverterised major home appliances:
Washing machines, dishwashers, fridges, air conditioning
Induction heating cook top
General purpose inverters
Induction heating rice cooker
Solar inverters
Office printers with induction heating used for ink
and band-feed
Partial PFC stages
Silicon Carbide
IGBT versus MOSFET
High Voltage
„
Break IGBT
UPS / Welding
Bipolar Transistor
low
Discrete IGBT
high
< 150 kHz
ultra high
( > 150 kHz)
„
„
Number 1 worldwide supplier
1 in every 4 Discrete IGBTs sold comes from Infineon
Features
Low Vce(sat) due to thin wafer technology
„ Low switching losses
„ High efficiency (cooler packages)
„ Huge portfolio (current, voltage and package types)
„ Excellent EMI behaviour
„ Technical support for customers
„ Solid logistic support
„ Highest quality standards
„ Leaders in IGBT Innovation
Benefits
Operating range up to 100kHZ
„ High efficiency devices optimised for
lowest switching and conduction losses
„ Cooler devices = smaller heat sinks
„ Excellent EMI behaviour meaning smaller
EMI filters
„ Comprehensive portfolio
„ Design support available on request
„
Packages
„
IGBT
medium
< 40 kHz
Power ICs
Frequency
low
< 12 kHz
72
73
IGBT Selection Tree
IGBT
NO
Single
IGBT
IGBT +
Anti-Parallel
Diode
Soft
Applications
YES
Hard
Diode
Commutation
20 – 100 kHz
HighSpeed
2 – 20 kHz
TRENCHSTOP™ (Duopack)
8 – 60 kHz
RC series (monolythic)
2 – 20 kHz
TRENCHSTOP™
RC-Drives
(monolythic)
20 – 100 kHz
HighSpeed
DuoPack
(discrete)
High Voltage
2 – 20 kHz
TRENCHSTOP™
Low Voltage
Frequency Range
Voltage Range
600V
1200V
600V
1200V
600V
1200V
600V 1100V 1200V 1350V 1600V
600V
600V
1200V
600V
1200V
Part Number
IGpccT120…
IGpccN120T2
IGpccN60H3
IGpccN120H2
IGpccN120H3
IHpccN60T
IHpccT60…
IHpccT120…
IHpccNvvvR2
IHpccNvvvR3
IHpccN60R
IHpccN60RF
IKpccN60R
IKpccN60RF
IKpccN60T
IKpccT120…
IKpccN120T2
IKpccN60H3
IKpccN120H2
IKpccN120H3
Silicon Carbide
IGpccN60T…
CCM-PFC
Welding
AirCon
Washing machine
Half Bridge Resonant
(Current resonance –
600V parts)
Half Bridge Resonant
(Current resonance –
600V parts)
Single Switch
Single Switch
(Voltage resonance
> 600V parts)
(Voltage resonance
> 600V parts)
Welding Inverter
Full bridge inverter
Two Transistor Forward
Packages
topologies
without
anti-parallel diode
Induction Heating
Microwave
Multifunction Printers
Power ICs
Hard switching
Welding Inverter
Full Bridge
Two Transitor Forward
Induction Heating
Microwave
Multifunction Printers
Solar Inverter
Asymmetrical Bridge
Symmetrical full bridge
Three level type I or
Three level type II converter
Motor Control
Three phase inverter
Full bridge inverter
UPS Bridge
Uninterruptable Power Supply
Three level type II converter
Major Home Appliances
Symmetrical full bridge
IGBT
Application
74
75
RC-Drives Fast IGBTs
Drive high-frequency inverter for comfortable quietness . The RC-Drives IGBT technology was released
by Infineon at the end of 2009 as a cost-optimized solution to address the price-sensitive consumerdrives market. This basic technology provides outstanding performance for permanent magnet
synchronous and brushless DC motor drives. To meet the rising demand of the IGBTs for the low power
motor drives consumer market, a new version of the RC-Drives IGBT was developed: the IGBT and diode
losses are optimized to reduce the inverter losses at switching frequencies of 4~30kHz.This new family
of Infineon’s reverse conducting IGBT is called RC-Drives Fast. For consumer drives this series enables
high efficient designs of inverters that feature operations above 16kHz to reduce the audible noise
to an absolutely silent level. Furthermore highly precise vector control technologies can be used to
provide more torque in operation at low speed and high performance dynamics in the control at high
speed. The small footprint needed by the components enable high power density designs with less
system cost.
Preview
„
„
Rapid Diode - Emitter controlled silicon diode family expansion targeting applications with switching
speeds up to 50 kHz. Target application is >100W PFC.*
Automotive Discrete IGBT portfolio qualified to AEC-Q101. Target application is EV-aircon, PTC heater,
and inverter drive; HID lighting and Piezo-injection for diesel/gasoline vehicles.*
TO-263
D2PAK
TO-220
TO-262
TO-220
FullPAK
6
10
15
20
30
30
40
50
75
3
4
IKU04N60R
IKD04N60RF
IKD04N60R
6
IKU06N60R
IKD06N60RF
IKD06N60R
IKB06N60T
IKP06N60T
IKA06N60T
10
IKU10N60R
IKD10N60RF
IKD10N60R
IKB10N60T
IKP10N60T
IKA10N60T
15
IKU15N60R
IKD15N60RF
IKD15N60R
IKB15N60T
IKP15N60T
IKA15N60T
IKB20N60T
IKP20N60T
TO-247
IGP06N60T
IGB10N60T
IGP10N60T
IGB15N60T
IGP15N60T
IGB30N60T
IGP30N60T
IGW30N60T
IGB50N60T
IGP50N60T
IGW50N60T
Low Voltage
Single IGBT
TO-252
DPAK
IGW75N60T
IKD03N60RF
20
30
50
75
IKP04N60T
IKI04N60T
High Voltage
For further information visit www.infineon.com/aircon
DuoPack
High efficiency - the CCM PFC stage uses the latest generation HighSpeed 3 IGBT and SiC diode to
achieve a PFC efficiency of > 97%. SMD mounting and high current density high speed IGBT allow for
improved PCB area optimisation.
IKW20N60T
IKW30N60T
IKW50N60T
IKW75N60T
TRENCHSTOPTM IGBT and DuoPack
1200V Product Family
TO-251
IC (max.)
[A]
TO-252
DPAK
TO-263
D2PAK
TO-220
TO-262
TO-220
FullPAK
TO-247
TRENCHSTOPTM
Single IGBT
„
DuoPack
„
Thermal behaviour - The inverter stages are driven with best in class current versus package size
IGBTs, 15A DuoPacks in a DPAK (TO-252) package are used for driving a 1kW compressor.
Application tests show the case temperature staying below 110°C with an ambient temperature of
65°C. This provides more design freedom and a cost effective opportunity to replace IPMs in the
inverter stage of the compressor and fan.
TO-251
Silicon Carbide
IC (max.)
[A]
Features
„ Assembly - Full power electronic SMD assembly example for high capacity production.
„
Applications
600V Product Family
8
15
25
40
60
8
15
25
40
TRENCHSTOPTM 2
IGW08T120
IGW15T120
IGBT
Infineon is renowned for offering best in class discrete devices and ICs – now with the inverterised
air conditioning reference board, Infineon can present system expertise in the fast growing
inverterised air conditioning market.
TRENCHSTOPTM IGBT and DuoPack
IGW25T120
IGW40T120
IGW60T120
IKW08T120
IKW15T120
IKW15N120T2
IKW25T120
IKW25N120T2
IKW40T120
IKW40N120T2
Power ICs
IGBT for Air Conditioning
Packages
* in development
76
77
HighSpeed 3 IGBT and DuoPack
Portfolio for 600V, 1100V, 1200V, 1350V & 1600V
1200V Product Family
IGBT & Diode
15
20
25
30
IHW30N60T
IHW40T60
IHW40N60R
IHW40N60RF
40
1100V
1200V
1350
1600V
IHW15T120
IHW15N120R3
IHW20N120R3 IHW20N135R3
IHW25N120R2
IHW30N110R3 IHW30N120R2
IHW30N160R2
IHW40T120
TO-251
TO-252
DPAK
3
TO-262
TO-220
FullPAK
IKW15N120H3
IKW25N120H3
IKW40N120H3
TO-251
TO-247
IC (max.)
[A]
IGP01N120H2
IGB03N120H2
IGP03N120H2
IGA03N120H2
IGW03N120H2
IKB03N120H2
IKP03N120H2
IKA03N120H2
IKW03N120H2
3
HighSpeed 3 IGBT and DuoPack
600V Product Family
TO-263
D2PAK
TO-220
IGB20N60H3
IGB30N60H3
IGP20N60H3
IGP30N60H3
IKB20N60H3
IKB30N60H3
IKP20N60H3
IKP30N60H3
TO-262
TO-220
FullPAK
IGA30N60H3
TO-247
IGW20N60H3
IGW30N60H3
IGW40N60H3
IGW50N60H3
IGW60N60H3
IGW75N60H3
IGW100N60H3
IKW20N60H3
IKW30N60H3
IKW40N60H3
IKW50N60H3
IKW60N60H3
IKW75N60H3
1200V
20
30
40
50
60
75
100
20
30
40
50
60
75
TO-252
DPAK
TO-263
D2PAK
TO-220
Real 2pin
TO-220 FullPAK
Real 2pin
TO-247
3
6
9
15
23
30
45
50
75
100
4
9
12
18
30
IDD03E60
IDD06E60
IDD09E60
IDD15E60
IDP06E60
IDB09E60
IDB15E60
IDP15E60
IDB23E60
IDP23E60
IDB30E60
IDP30E60
IDB45E60
IDP45E60
IDV30E60C
IDW30E60
IDW50E60
IDW75E60
IDW100E60
IDP04E120
IDP09E120
IDB12E120
IDP12E120
IDB18E120
IDP18E120
IDB30E120
IDP30E120
Packages
DuoPack
IGBT
IC (max.)
[A]
TO-251
TO-252
DPAK
600V
IGB01N120H2
600V / 650V
IGBT
DuoPack
IGD01N120H2
1
TO-220
TO-247
IGW40N120H3
600V and 1200V
TO-263
D2PAK
TO-220
FullPAK
IGW25N120H3
Discrete Emitter Controlled Diodes
TO-252
DPAK
TO-262
IGW15N120H3
1200V Product Family
TO-251
TO-220
15
25
40
15
25
40
HighSpeed2 IGBT and DuoPack
IC (max.)
[A]
TO-263
D2PAK
Silicon Carbide
600V
IC (max.)
[A]
Low Voltage
TO-247 (IHW...)
High Voltage
TO-262
IGBT
TO-220
Power ICs
TO-263
D2PAK
IGBT
TO-252
DPAK
DuoPack
TO-251
IC (max.)
[A]
Applications
TRENCHSTOPTM RC-H series
78
79
Naming System
I
K
W
40
N
120
H
Applications
Discretes IGBT and Emitter Controlled Diodes
3
Company
I = Infineon
S = Formerly Siemens
High Voltage
Technology
N = N-Channel
T = TRENCHSTOPTM
E = Emitter Controlled Diodes (for diode only)
Nominal Voltage
Divided by 10 (120 x 10 = 1200V)
– = Fast IGBT (~20kHz)
Hχ = HighSpeed Generation (600 - 1200V)
Tχ = TRENCHSTOP™ Generation (600V IGBT3) (1200V IGBT4)
Rχ = Reverse Conducting
RF = Reverse Conducting Fast
A = Automotive
Our High Performance Solution
Inverterised Air-conditioning Reference Board
Infineon is renowned for offering best in class discrete devices and ICs – now with
the inverterised air conditioning reference board, Infineon can present system
expertise in the fast growing inverterised air conditioning market.
Key features and benefits of Infineon’s Air-conditioning reference board
Size and thermally optimised reference platform for inverterised air-conditioner
Innovative cooling for high power SMD IGBTs
Full power electronic SMD assembly for high capacity production
Packages
Generation
For further information please visit our website:
80
Silicon Carbide
Nominal Current
(@ 100°C) [A]
IGBT
diodes only
Power ICs
Package Type
A = TO-220 FullPAK
B = TO-263 (D2PAK)
D = TO-252 (DPAK)
P = TO-220
U = TO-251 (IPAK)
W = TO-247
I = I2PAK
V = Real 2pin TO-220 FP
P = Real 2Pin TO-220
Low Voltage
Device
K = IGBT + Diode (normal drives)
H = optimised for soft
switching applications
(e.g. induction heating)
G = Single IGBT
D = Diode
[ www.infineon.com/aircon ]
81
Power Factor Correction and Combo Controller
Continuous Conduction Mode PFC ICs
Applications
Discontinuous Conduction Mode PFC ICs
TDA486x
Low Voltage
zero crossing
detector
ICE2PCSxx
„
„
„
„
„
„
„
„
„
„
Fulfills Class D Requirements of IEC 61000-3-2
Lowest count of external components
Adjustable and fixed sw frequencies
Frequency range from 20kHz to 285kHZ
Versions with brown-out protection available
Wide input range supported
Enanched Dynamic Response during Load Jumps
Cycle by Cycle Peak Current Limiting
Integrated protections OVP, OCP
DIP8 and DSO8
Leadfree, RoHS compliant
High Voltage
„
Silicon Carbide
Power Factor Controller IC for high-power
factor and low THD additional features to TDA4862
„ Reduced tolerance of signal levels
„ Improved light load behavior
„ Open loop protection
„ Current sense input with leading edge blanking LEB
„ Undervoltage protection
2nd Generation Continuous Conduction Mode (CCM) Power Factor Correction IC Product Portfolio
Product
ICE2PCS01
ICE2PCS02
ICE2PCS03
ICE2PCS04
ICE2PCS05
ICE2PCS01G
ICE2PCS02G
ICE2PCS03G
ICE2PCS04G
ICE2PCS05G
Frequency(SW) Current Drives Package
50kHz - 285kHz
2.0A
65kHz
2.0A
100kHz
2.0A
DIP-8
133kHz
2.0A
20kHz - 250kHz
2.0A
50kHz - 250kHz
2.0A
65kHz
2.0A
100kHz
2.0A
DSO-8
133kHz
2.0A
20kHz - 250kHz
2.0A
IGBT
Power Factor Controller (PFC) IC for high-power factor
and active harmonic filter
„ IC for sinusoidal line-current consumption
„ Power factor approaching 1
„ Controls boost converter as an active harmonics
filter
„ Internal start-up with low current consumption
„ Zero current detector for discontinuous operation
mode
„ High current totem pole gate driver
„ Trimmed ±1.4% internal reference
„ Undervoltage lock out with hysteresis
„ Very low start-up current consumption
„ Pin compatible with world standard
„ Output overvoltage protection
„ Current sense input with internal low pass filter
„ Totem pole output with active shutdown during
UVLO
„ Junction temperature range -40 to +150°C
„ Available in DIP-8 and SO-8 packages
2nd Generation Continuous Conduction Mode (CCM) Power Factor
Correction IC Features
Power ICs
TDA4863 / TDA4863-2
Packages
TDA4862
82
83
„
„
„
„
„
„
„
Fixed Frequency PWM IC and CoolSET™ Product Portfolio
Product
ICE3PCS01G
ICE3PCS02G
ICE3PCS03G
Frequency(SW) Current Drives
Features
Package
0.75A
OVP+Brown-out DSO-14
0.75A
OVP
Adjustable
DSO-8
0.75A
Brown-out
DSO-8
Applications
Low Voltage
„
Fulfills Class D Requirements of IEC 61000-3-2
Integrated digital voltage loop compensation
Boost follower function
Bulk voltage monitoring signals, brown-out
Multi protections such as Double OVP
Fast output dynamic response during load jump
External synchronization
Extra low peak current limitation threshold
SO8 and SO14
Leadfree, RoHS compliant
ICE1CS0x/G
„
„
„
High Voltage
„
Pre-short Protection
Trimmed Reference Voltage ±2.5% (±2% at 25°C)
BiCMOS technology for wider VCC Range
Power Factor Correction Block
„ Fulfills Class D Requirements of IEC 61000-3-2
„ Fixed switching frequency (sync to half PWM freq.)
„ AC brown-out protection
„ Average Current Control
„ Max Duty Cycle of 95%
„ Enhanced Dynamic Response for fast load response
„ Unique Soft-Start to Limit Start Up Current
„ Over-Voltage Protection
Frequency(SW)
PFC=65kHz
PWM=130kHz
Current Drives Package
2.0A
DIP-16
2.0A
DSO-16
Packages
Power ICs
Product
ICE1CS02
ICE1CS02G
Pulse-Width-Modulation Block
„ Fixed Switching Frequency
„ Option for external control synchronization
„ Built in Soft Start for higher reliability
„ Max Duty Cycle 47% or 60%
„ Overall Tolerance of Current Limiting <±5%
„ Internal Leading Edge Blanking
„ Slope Compensation
„ Fast, soft switching totem pole gate drive (2A)
„ SO16 and DIP16
„ Pb-free lead plating and RoHS compilant
„ All protection features available
Silicon Carbide
„
Combination of Continuous Conduction Mode PFC
with Two-Transistor Forward PWM IC
IGBT
3rd Generation Continuous Conduction Mode (CCM)
Power Factor Correction IC Features
84
85
LLC Resonant (No SR)
LLC Resonant + SR
Applications
Resonant LLC Half-Bridge Controller IC
with Integrated Sychronised Rectifier control
Low Voltage
Resonant LLC Half-Bridge Controller IC
„
„
„
„
„
„
„
„
„
„
„
„
„
„
„
„
„
Frequency(SW)
Dead Time(ns) Current Drives Package
30kHZ~600kHz
380
1.5A
DSO-8
Product
ICE2HS01G
Frequency(SW)
30kHz~1MHz
Dead Time(ns) Current Drives Package
125ns~2us
0.3A
DSO-20
Packages
Power ICs
Product
ICE1HS01G
Novel LLC/SR operation mode and controlled by
primary side controller
Multiple protections for SR operation
Tight tolerance control
Accurate setting of switching frequency and dead
time
Simple system design
Optimized system efficiency
Multiple converter protections: OTP, OLP, OCP,
Latch-off Enable
External disable for either SR switching or HB
switching
Lead Free, RoHS compliant package
DSO-20 package
Silicon Carbide
„
Novel and simple design (12 components + HB
driver)
Minimum operating frequency is adjustable
externally
Burst mode operation for output voltage regulation
during no load and/or bus over-voltage
Multiple protections in case fault
Input voltage sense for brown-out protection
Open loop/over load fault detection by FB pin with
auto-restart and adjustable blanking/restart time
Frequency shift for over-current protection
Lead Free, RoHS compliant package
DSO-8 package
IGBT
„
High Voltage
ICE2HSO1G
ICE1HSO1G
86
87
Climate Saver Gold
Climate Saver 80 PLUS® Platinum
Applications
Climate Saver Standard and Bronze
certification for Infineon's Silverbox reference design
12 V
DC/DC
5V
DC/DC
5V
3V3
Low Voltage
12V
3V 3
PFC / PWM
5V
Standard and Bronze
PWM
CoolSETTM
ICE1CS02/G
5V
High Voltage
PFC Block
PWM Block
PFC
ICE3AR10080JZ/CJZ
ICE3AR4780JZ
ICE3AR2280JZ/CJZ
CoolSETTM
Gold
Climate Saver Silver
ICE3PCS01G
PFC Block
DC/DC
5V
ICE3PCS02G
ICE3PCS03G
PWM Block
ICE2HS01G
ICE3AR10080JZ/CJZ
DC/DC
3V3
12V
PFC
PWM
5V
Silver
PFC Block
PWM Block
ICE2PCS01G
ICE3AR4780JZ
Standby Block
CoolSET™
80 PLUS® Platinum
certification for Infineon's Silverbox reference design
ICE3AR2280JZ/CJZ
ICE3AR0680JZ
ICE3BR2280JZ
Silicon Carbide
ICE3AR0680JZ
ICE3PCS01G
PFC Block
ICE3PCS02G
ICE3PCS03G
PWM Block
ICE2HS01G
ICE2QR4780Z
Standby Block
CoolSET™
ICE3BR0680JZ
ICE2QR2280Z
ICE2QR0680Z
ICE2QR2280G
For further information visit www.infineon.com/silverbox
IGBT
Standby Block
CoolSET™
CoolSETTM
ICE2PCS02/G
ICE1HS01G-I
ICE3AR10080JZ/CJZ
ICE3AR4780JZ
ICE3AR2280JZ/CJZ
Power ICs
Standby Block
CoolSET™
ICE3AR0680JZ
ICE2QR4765
ICE2QR1765
Packages
ICE2QR0665
88
89
Isolated AC/DC
Fixed Frequency PWM IC and CoolSET™ Features
Applications
Quasi-resonant PWM IC and CoolSET™ Features
zero crossing
detector
„
„
„
„
„
„
„
„
„
„
Quasi-resonant PWM IC and CoolSET™ Product Portfolio
VDS (breakdown)
650V
650V
650V
650V
650V
650V
650V
650V
800V
800V
800V
800V
R(DS)on
4.7Ω
4.7Ω
4.7Ω
1.7Ω
1.7Ω
1.7Ω
0.6Ω
1.0Ω
4.7Ω
2.2Ω
2.2Ω
0.6Ω
Power (Universal)
Package
19W
19W
19W
33W
33W
33W
50W
41W
22W
31W
31W
57W
DIP-8
DSO-8
DIP-8
DSO-8
DIP-7
DIP-8
DSO-12
DIP-7
DIP-8
DSO-12
DIP-8/DIP-7/DSO-12
DIP-7
DIP-7
DIP-7
DSO-12
DIP-7
„
„
„
„
Active Burst Mode to achieve the lowest Standby
Power Requirements < 50 mW
Optional Latched Off Mode (L) to increase
robustness and safety of the system
Adjustable Blanking window for high load jumps to
increase reliability
Startup Cell switched off after Start Up
65kHz/10kHz/130kHz internally fixed Switching
Frequency
„
„
„
„
„
„
„
Over-temperature, over-voltage, short-winding,
overload and open-loop, VCC Under-voltage, (Brownout) protections
Fixed softstart time
Overall Tolerance of Current Limiting < ±5%
Internal Leading Edge Blanking Time
Max duty cycle 72%
PB-free Plating and RoHS compliance
DIP, DSO and FullPAK packages
Fixed Frequency PWM IC and CoolSET™ Product Portfolio
Product
ICE3AS03LJG
ICE3BS03LJG
ICE3GS03LJG
ICE3BR4765J
ICE3BR1765J
ICE3RR1065J
ICE3BR0665J
ICE3BR4765JZ
ICE3BR1765JZ
ICE3BR0665JZ
ICE3BR4765JG
ICE3A1065ELJ
ICE3A2065ELJ
ICE3AR10080JZ
ICE3AR10080CJZ
ICE3AR4780JZ
ICE3AR2280JZ
ICE3AR2280CJZ
ICE3AR0680JZ
ICE3BR2280JZ
ICE3BR0680JZ
Frequency(SW)
100kHz
65kHz
130kHz
65kHz
65kHz
65kHz
65kHz
65kHz
65kHz
65kHz
65kHz
100kHz
100kHz
100kHz
100kHz
100kHz
100kHz
100kHz
100kHz
65kHz
65kHz
VDS (breakdown)
R(DS)on
Power (Universal)
650V
650V
650V
650V
650V
650V
650V
650V
650V
650V
800V
800V
800V
800V
800V
800V
800V
800V
4.7Ω
1.7Ω
1.0Ω
0.6Ω
4.7Ω
1.7Ω
0.6Ω
4.7Ω
3.0Ω
1.0Ω
10.0Ω
10.0Ω
4.7Ω
2.2Ω
2.2Ω
0.6Ω
2.2Ω
0.6Ω
18W
31W
28W
49W
18W
30W
47W
17W
16W
28W
10W
10W
20W
28W
28W
52W
28W
52W
Package
DSO-8
DSO-8
DSO-8
DIP-8
DIP-8
DIP-8
DIP-8
DIP-7
DIP-7
DIP-7
DSO-12
DIP-8
DIP-8
DIP-7
DIP-7
DIP-7
DIP-7
DIP-7
DIP-7
DIP-7
DIP-7
Packages
Product
ICE2QS01
ICE2QS02G
ICE2QS03
ICE2QS03G
ICE2QR4765Z
ICE2QR4765
ICE2QR4765G
ICE2QR1765Z
ICE2QR1765
ICE2QR1765G
ICE2QR0665/Z/G
ICE2QR1065Z
ICE2QR4780Z
ICE2QR2280Z
ICE2QR2280G
ICE2QR0680Z
„
Low Voltage
Auto restart mode for over-temperature
protection
Latch-off mode for output over-voltage, shortwinding
BiCMOS Technology (controller) for wide Vcc
operation and low IC power consumption
Peak power limitation with input voltage
compensation
Minimum switching frequency limitation
(no audible noise on Power Units On/Off)
DIP & DSO Package (for controllers and
CoolSET™)
PB-free Plating and RoHS compliance
Silicon Carbide
„
„
IGBT
„
Integrated 650V CoolMOS™ or HV start-up cell
for IC self-power supply
Quasi-Resonant operation with Digital
Frequency Reduction
High average efficiency over wide load range
Stable operation without jittering/audible noise
problem
Active burst mode operation for very low stby
losses (to achieve standby power <100mW)
Auto restart mode for VCC under-voltage/overvoltage protection
Auto restart mode for open-loop and output
overload protection
Power ICs
„
CoolSETTM
High Voltage
CoolSETTM
90
91
MOSFET Gate Driver IC
6 x 6 IQFN High-Performance DrMOS (Driver+MOS)
PX3516
TDA21211 / TDA21220 / TDA21222 / TDA21223
Features
„ Dual MOSFET driver for synchronous
rectified bridge converters
„ Adjustable high-side and low-side MOSFET
gate drive voltages for optimal efficiency
„ Integrated bootstrap diode for
reduced part count
„ Adaptive gate drive control prevents
cross-conduction
„ Fast rise and fall times supports switching
rates of up to 2MHz
Features
„ Intel compliant DrMOS, Power MOSFET and Driver
in one package
„ For Synchronous Buck - step down voltage
applications
„ Wide input voltage range 5V ... 25V
„ High efficiency
„ Extremely fast switching technology for improved
performance at high switching frequencies
„ Remote Driver Disable function
„ SMOD−Switching Modulation of low side MOS
„ Extremely Robust Switch Node -20V … 30V
for added reliability in noisy applications
PX3516
TDSON10
Y
1
0°C to 125°C
+4.5V to 6,5V
30
1.15, 2.10
410uA
VCC
BOOT
HS
Driver
UVLO
PWM
Control
Logic
„
„
„
„
„
Low Voltage
„
High Voltage
„
„
Includes active PMOS structure as integrated
bootstrap circuit for reduced part count
Adaptive Gate Drive for shoot through protection
5V High and Low Side Driving voltage
Compatible to standard PWM controller ICs
with 3.3V and 5V logic
Three-State functionality
Thermal warming and shutdown (TDA21222)
Small Package: IQFN-40 (6 x 6 x 0.8 mm3)
RoHS Compliant (Pb Free)
For further information visit www.infineon.com/drmos
Input Voltage
SMOD function
Thermal warning/shutdown
Max average load current
MOSFET Voltage
Schottky Diode
PWM levels
Shoot through protection
TDA21211
TDA21220
TDA21222
TDA21223
30V
Low Side
–
35A
30V
Included
compatible
+3.3V / +5V
(tolerant)
Included
16V
Low Side
–
50A
25V
Included
compatible
+3.3V / +5V
(tolerant)
Included
16V
Low Side

50A
25V
Included
compatible
+3.3V / +5V
(tolerant)
Included
16V
Low Side

50A
25V
Included
compatible +5V
incl. High-Z state
Silicon Carbide
„
„
Included
UGATE
IGBT
„
Capable of sinking more than 4A peak
current for low switching losses
Three-state PWM input for output
stage shutdown
VCC under-voltage protection
Lead-free (RoHS compliant)
SOIC and DFN packages
PHASE
ShootThrough
Protection
PVCC
LS
Driver
LGATE
Power ICs
Gate Driver
Package
RoHS-compliant
Number of channels
Maximum junction temperature
Supply voltage, Vcc
BOOT to GND
PWM Inputs
Quiescent current Iq
„
Applications
Non-Isolated DC/DC
GND
Packages
PAD
92
93
As microprocessors and ASICs have grown in power and complexity, their voltage regulation
requirements have become increasingly demanding. This growing complexity has led to the
introduction of Primarion Digital Power Management (DPM) solutions with increased accuracy, realtime monitoring and control capabilities via digital communications bus. The simplified system design
the DPM solution provides leads to lower cost and higher performance implementations.
HS Driver
DISB
VSW/PHASE
HS
Logic
VCIN
Shoot Through
Protection Unit
LS
Logic
SMOD
LS Driver
IC Driver
CGND
Primarion’s Core Power ICs are designed into voltage regulator modules (VRMs) and motherboards for
leading server original equipment manufacturers (OEMs) and are currently shipping into major server
OEM systems to power CPU and GPU.
Primarion’s digital power system-level solutions enable improved digital control features: better
accuracy and use of lower cost passive components through adaptive digital calibration, improved
ability to respond to fast changes in power requirements (transients) using fewer external capacitors
with proprietary Active Transient Response (ATR), and easier design-in with a graphical user interface.
Primarion’s overall solution requires substantially fewer components and associated costs as
compared to current analog power solutions.
Input
Logic
3-State
PWM
Low Voltage
Level
Shifter
GH
GL
PGND
High Voltage
BOOT
VIN
Infineon/Primarion PowerCode™ is a software tool which greatly simplifies the configuration and
performance optimization of Infineon digital controllers. It provides an intuitive Graphical User
Interface (GUI) that runs on Microsoft Windows. The program comes with an automated design wizard
that guides design engineers through the process of configuring single or multi-chip systems. Factory
default configurations are supplied which can be easily modified through a variety of dialogs. Range
checking and error detection ensure proper configuration.
Additional features included are:
Chip detection
„ Real-time telemetry and temperature information
„ Fault detection and clearing
„ System file editing
„ Bode plots and load models
„
„
„
„
Current Sense network design
Phase and Frequency adjustment
Input and Output settings
Access to PMBus programming
Packages
Power ICs
„
Silicon Carbide
UVLO
VDR
IGBT
VCIN
Applications
Digital Controllers for Core and Memory Power
DrMOS application diagram
94
95
Lighting ICs
TDA21801
Smart FL Ballast Controller
With the fan speed controller TDA21801, essential system monitoring features of switched mode power
supplies (SMPS) such as adjustable minimum fan speed, fan ON/OF and overtemperature protection
(OTP) can be easily implemented. Only few external components added to the IC are necessary for it.
Smart Ballast Control ICs from Infineon integrate all functions required to operate FL lamps such
as preheat-, ignition- and run- mode and protection features. Digital mixed-signal power control
is employed enabling speedy, cost effective and stable ballast designs with a minimum number
of external components. Reliable and robust high voltage isolation is achieved using Infineon’s
proprietary Coreless Transformer Technology (CLT).
Benefits
„ Full control over fan speed due to precision
reference
„ Low system cost when replacing 4-wire fans
„ Reduced noise level
„ Increased safety of power supplies
Features
„ In combination with 2-wire fans same
functionality as 4-wire fan solution
„ Overtemperature protection feature to protect
system and power supply
„ Adjustable minimum fan speed (750 to
4000rpm)
„ Fan speed can be increased by external PWM
or analogue signal
„ SO-8 Package/RoHS compliant
„
„
„
„
Integrated High Performance PFC Stage
Intelligent Digital/Mixed Signal Power Control
Integrated High Voltage Half Bridge Driver
All Parameters set using only resistors
Highly accurate timing and frequency
control over a wide temperature range
Low Voltage
„
High Voltage
The TDA21801 is designed for applications using 3- or 4-wire fan solutions like PC silver boxes,
Server silver box AC/DC converter and industrial/medical power supplies.
Applications
Fan Speed Controller
Packages
Power ICs
IGBT
Silicon Carbide
PFC Controller
Ballast Controller
HV-Driver
96
97
Features
„ Able to handle lamp chokes with higher
saturation behavior
„ Special in-circuit test mode for faster test time
„
„
„
max.
170μA
120kHz
150kHz
2500ms
2.75μs
1.50μs
+900V
1.7V
0.85V
+40μA
–
–
18μs
–
–
2.47V
2.68V
1.835V
0.237V
-25°C
–
–
22.7μs
1.0V
1.0V
2.5V
2.73V
1.88V
0.31V
–
–
–
26μs
–
–
2.53V
2.78V
1.915V
0.387V
+125°C
–
17.5V
„
„
„
„
„
No high voltage capacitor required for detection
of lamp removal (capacitive mode operation)
Automatically restarts by surge and inverter
overcurrent events
Skipped preheating when line interruption
< 500ms
Self adapting dead time adjustment of the half
bridge driver
One single restart at fault mode
„
„
„
„
„
„
Enables ballast compatibility with a wider range
of lamp types
Flexible support of both current and voltage
mode preheating
Reduced BOM costs
Intelligent discrimination between surge & half
bridge overcurrent events
Meets standards for emergency lighting
(according to DIN VDE 0108)
Eases design of multi-power ballasts and
reduces EMI
Enhanced reliability of ballasts
ICB2FL02 G
The ICB2FL02 G is functionality identical to the ICB2FL01 G with adjustments to certain timings and
parameters to further optimize performance in dimming ballasts.
Function
Cap load 1 protection
Suitable for Dimming
Max adjustable run frequency
Adjustable dead time
Dead time detector level
Capacitive mode 2 detector level 3
ICB2FL02 G
Deactivated
Optimized
max. 140kHz
1.05μs
-50mV
-50mV
IGBT
10V
–
–
20kHz
FRFRUN
0ms
2.25μs
1.00μs
-900V
1.5V
0.75V
-40μA
–
typ.
SO-19
–
14V
110μA
–
–
–
2.50μs
1.25μs
–
1.6V
0.80V
–
–
„
ICB2FL01 G
Activated
yes
max. 120kHz
1.05μs to 2.5μs
-100mV
-100mV
Power ICs
PFC preconverter control with critical and discontinuous CM
Maximum controlled on-time
Hysteresis of zero current detector
PFC Current limitation threshold
Reference voltage for control of bus voltage
Overvoltage detection threshold
Undervoltage detection threshold
Open loop detection
Junction operating temperature range
Pb-free lead plating RoHS compliant
min.
Benefits
Optimized lamp choke size and reduced BOM
costs
„ Dramatically reduced time for key tests such as
end of life detection, preheat/ignition timeout
and pre run operation modes
„ Suitable for dimming and multi-power ballasts
„
Packages
Short Form Data
Package
Operating voltage range
Turn-on threshold
Supply current during UVLO and fault mode
Operating frequency of inverter during RUN mode
Operating frequency of inverter during preheating mode
Preheating time
Adjustable self-adapting dead time max between LS and HS gate drive
Adjustable self-adapting dead time min between LS and HS gate drive
Operating voltage range of floating HS gate drive
LS Current limitation threshold: Ignition/start up/soft start/pre run
LS Current protection threshold during RUN mode and preheating
End-of-life detection threshold
Detection of non-ZVS operation CapMode 1 & 2
Excellent dynamic PFC performance enables very
low THD across wide load ranges
Separate adjustable levels of lamp overload and
rectifier effect detection
Adjustment of the preheat time
Applications
ICB2FL01 G
Low Voltage
Infineon’s 2nd Generation Smart Ballast Controller
ICB2FL01 G is designed to control a fluorescent
lamp ballast including
„ Power Factor Correction (PFC)
„ Lamp Inverter Control and
„ High voltage level-shift half bridge driver
with Coreless Transformer Technology
High Voltage
Smart Ballast Controller
Silicon Carbide
ICB2FL01 G
98
99
LED Driver for General Lighting
Infineons’s latest Smart Ballast Controller ICB2FL03 G in SO-16 offers very similar performance and
feature set compared to the well established SO-19 product ICB2FL01 G
LED based lighting sources are the best suited candidates to replace inefficient lighting solutions
such as incandescent or halogen lamps that are still widely used today. Current LED driver design
and system cost are still a challenge to gain major consumer acceptance. Infineon offers benchmark
solutions and represent an outstanding choice to overcome this hurdle.
ICB2FL03 G
SO-16 small body
650V
single and series
ICB1FL01 G
SO-19 wide body
900V
Single, series and parallel
ICL8001G / ICL8002G / ICLS8082G for Dimming Applications
Low Voltage
Package
Driver capability
Lamp connection
Applications
ICB2FL03 G
are designed for off-line LED lighting applications with high efficiency requirements such as
replacement lamps (40/60/100W), LED tubes, luminaires and downlights. Infineon provides a single
stage flyback solution with PFC and dimming functionality. Innovative primary control techniques
combined with accurate PWM generation for phase cut dimming enable solutions with significant
reduced component count on a single sided driver PCB for smallest form factor.
Benefits
ICL8001G simplifies LED driver implementation
„ ICL8002G is optimized for best possible dimming performance
„ ICLS8082G integrates CoolMOS™ switch
High Voltage
„
C11
VIN
VR
ZCV
VCC
ICL 8001G
Continuous Mode
DIM Control
PFC
N.C.
PWM-Control
Protection
Gate Driver
GND
HV
Start-Up
Cell
R19
Q1
R17
L1
VIN
R5
C1
L2
C12
C17
R6
R3
CS
N1 N3
D5
VLED
D6
R2
N2
BR1
VR
ZCV
Continuous Mode
DIM Control
PFC
C5
GND
Drain
VCC
Start-Up
Cell
PWM-Control
Protection
Gate Driver
GND
C25
R6
C15
C18
ICLS8082G
GD
D21
T1
R1
VIN Detection
IGBT
ICLS8082G
VLED
Gate
Power ICs
ICL8001G
Silicon Carbide
Features
„ Primary side flyback or buck control with integrated PFC and phase angle dimming
„ Optimized for trailing- and leading-edge dimmers
„ Integrated HV startup cell for short time to light
„ Best in class BOM for dimmable LED bulbs
„ High and stable efficiency over wide dimming range
– Good line regulation capabilities based on digital foldback correction
– Low external part count for simplified designs and short-time to market
– Cycle-by-cycle peak current limitation
„ Built-in digital soft-start
„ Auto restart mode for short circuit protection
„ Adjustable latch-off mode for output overvoltage protection
CS
R4
Packages
GND
100
101
Linear Current Regulators
deploys fixed frequency operation mode with integrated power factor control for off-line LED lighting
applications. Applied innovative primary control techniques result in excellent system efficiencies
with significant reduced external component count. The integrated CoolMOS™ simplifies designs and
enables compact applications for integration in standard screw-in sockets and LED luminaires.
BCR401W / BCR402W / BCR401U / BCR402U / BCR405U
Nominal Power (± 15%)
230V VAC in
90V VAC in
12W
5W
17W
9W
17W
9W
26W
15W
24W
12W
T1
R2
C7
R6
VAC in
C1
BR1
C3
C2
BCR 401U
BCR 401W
BCR 402U
BCR 402W
BCR 405U
7
VCC
Vs (min)
Vs (max)
Iout (typ)
Iout (max)
Package
Ptot (max)
∆(Iout)/ Iout
1.4V+UfLED
1.2V+UfLED
1.4V+UfLED
1.4V+UfLED
1.4V+UfLED
40V
18V
40V
18V
18V
10mA
10mA
20mA
20mA
50mA
65mA
60mA
60mA
65mA
65mA
SC74
SOT343
SC74
SC343
SC343
750mW
500mW
750mW
500mW
750mW
1.0%/V
2.0%/V
1.0%/V
2.0%/V
1.0%/V
High Voltage
Supply voltage 12 VDC
VLED
LED driver BCR 401/402
D4
C6
L1
PG-DIP-8
PG-DIP-8
PG-DSO-12
PG-DIP-8
PG-DIP-7
D6
C8 +
D5
Package
Features and benefits
„ Output current from 10mA to 65mA (adjustable by external resistor)
„ Supply voltage up to 24V (BCR401W, BCR402W) and up to 40V (BCR401U, BCR402U, BCR405U)
„ Reduction of output current at high temperature, contributing to long lifetime LED systems
„ Easy to use
„ Very small form factor packages with up to 750mW max. power handling capability
Silicon Carbide
ICLS6021J
ICLS6022J
ICLS6022G
ICLS6023J
ICLS8023Z
RDS(on)
[Ω]
6.45
4.70
4.70
1.70
2.26
The advantage versus discrete semiconductors is:
„ Reduced part count and assembly effort
„ Pretested output current
„ Defined negative temperature co-efficient protection
IGBT
VGS
[V]
650
650
650
650
800
The advantage versus resistor biasing is:
Long lifetime of LEDs due to constant current in each LED string
„ Homogenous LED light output independent of LED forward voltage binning,
temperature increase and supply voltage variations
„ See application Note AN182 for details on replacing resistors
„
Features
„ Single stage flyback or buck, primary control with PFC, flyback, fixed frequency operation
„ Highly efficient - system efficiency up to 84%, power factor > 70%
„ Dimmer safe operation
„ Outperforms worldwide regulatory requirements
„ Minimized external component count for smallest form factor and maximum reliability
„ Isolated driver output for efficient thermal management
„ Multiple safety functions for full system protection in failure situations
Partnumber
The BCR40x family is the smallest size and lowest cost series of LED drivers. These products are
perfectly suited for driving low power LEDs in General Lighting applications. Thanks to AEC-Q101
qualification, it may also be used in Automotive applications such as brake lights or interior.
Low Voltage
Benefits
„ Fast and simple designs at lowest BOM cost, also meeting future more stringent
performance requirements
„ Integrated CoolMOS™ switch
Applications
ICLSx-Series for Non-Dimming Applications
Control circuit
Rint
4 5
D D
RSENSE
(optional)
Sense
L2
ICLSx-Series
1 SS
Control
PWM-Control
R3
C4 C5
GND
8
CS
3
Power ICs
Q1
2 FB
R7
LEDs
Packages
ON/OFF
102
103
DC/DC Switch Mode LED Drivers
The BCR32x and BCR42x LED drivers are dedicated linear regulators for 0.5W LEDs with a maximum
output current of 250mA. They are optimized in terms of cost, size and feature set for medium power
LEDs in General Lighting applications. Thanks to AEC-Q101 qualification, it may also be used in
Automotive applications such as brake lights or interior.
ILD1151 / ILD2035 / ILD4001 / ILD4035 / ILD4120 / ILD4180
+
–
Vs (min)
Vs (max)
Iout (typ)
Iout (max)
Package
Ptot (max)
∆(Iout)/ Iout
1.4V+UfLED
1.4V+UfLED
1.4V+UfLED
1.4V+UfLED
24V+UfLED
24V+UfLED
40V+UfLED
40V+UfLED
250mA
250mA
150mA
150mA
300mA
300mA
200mA
200mA
SC74
SC74
SC74
SC74
1.000mW
1.000mW
1.000mW
1.000mW
1.0%/V
1.0%/V
1.0%/V
1.0%/V
VS
Iout (typ)
„
„
„
Low Voltage
Features and benefits
Wide input voltage range
„ Scalability in output current from 150mA up to
multiple amperes
„ Alternative dimming concepts: Digital or analog
„
Over voltage and over current protection
Smart thermal protection for ILD2035, ILD4035 and
ILD4120 contributing to longer LED lifetime
ILD1151 supports boost, buck-boost and SEPIC topologies
Vs (min)
Vs (max)
Iout (max) Package Dimming Topology fsw
ILD 1151
4.5V
45V
90.0mA
3.000mA SSOP-14 analog/
digital
ILD 4001
4.5V
42V
10.0mA
ILD 2035
8.0V
22V
350mA
3.000mA DSO-8-27 analog/
digital
400mA SC74
-
ILD 4035
4.5V
40V
350mA
400mA
ILD 4120
4.5V
40V
ILD 4180
4.75V
45V
SC74
analog/
digital
1.200mA 1.200mA DSO-8-27 analog/
digital
1.800mA 1.800mA DSO-8-27 digital
High Voltage
BCR 320U
BCR 321U
BCR 420U
BCR 421U
The ILD series are switch-mode LED drivers for high power LEDs. They combine protection features that
contribute to the lifetime of LEDs with the flexibility in output current range from 150mA up to multiple
amperes. The new ILD series include LED driver ICs with integrated power stage as well as with external
MOSFET achieving up to 98% driver efficiency across a wide range of general lighting applications.
ILD2035, ILD4035, ILD4120 and ILD4180 are buck LED regulators. ILD4001 is a buck LED controller and
ILD1151 is a multi-topology LED controller.
Features
boost,
adjustable Multi topology controller,
buckboost 100constant current or constant
SEPIC
500kHz voltage mode, over voltage, over
current, short on GND protection
hysteretic < 500kHz thermal protection
buck
hysteretic < 500kHz smart thermal protection
buck
hysteretic < 500kHz smart thermal protection, over
buck
voltage, over current protection
hysteretic < 500kHz smart thermal protection, over
buck
voltage, over current protection
fixed
370kHz over voltage, over current
frequency
protection, constant current or
buck
constant voltage mode
Silicon Carbide
Features and benefits
„ Output current from 10mA up to 300mA for BCR32x (200mA for BCR42xU), adjustable
by external resistor
„ Supply voltage up to 40V for BCR42x (24V for BCR32x)
„ Direct microcontroller interface for PWM dimming with BCR321U/BCR421U
„ Reduction of output current at high temperature, contributing to long lifetime LED systems
„ Easy to use
„ Very small form factor packages with up to 1.000mW max. power handling capability
Applications
BCR420U / BCR321U / BCR420U / BCR421U
RSENSE
(optional)
Von:
Supply
Voltage
C
IGBT
BCR 320
BCR 420
Von:
BCR 321
BCR 421
µC
Analog
Voltage
VSupply
Enable
Schottky diode
e.g. BAS 3020B
RSENSE
Digital PWM
Signal
ISupply
PWM
GND
IOUT
GND
IOUT
Power ICs
ILD 4120
Packages
L
104
105
1EDI30J12CL and 1EDI30J12CP
Single channel isolated gate driver
Same functions and features as 1ED020I12-B2
„ Basic isolation according to EN60747-5-2,
recognized under UL1577
„ Adjustable two level turn-off function
„ Desaturation detection with 500μA
Infineon has developed the Direct Drive JFET concept to enable normally-on SiC JFETs to be driven at
best possible efficiency and as safe as normally-off switches. This isolated EiceDRIVER™ dedicated for
normally-on SiC JFETs comes with special features and benefits:
„
„
„
1ED020I12-FT
Single channel isolated gate driver
„ Same functions and features as 1ED020I12-BT
„ Functional isolation of 1200V
2ED020I12-F2
„
„
Single channel driver IC with Coreless Transformer
(CT) technology
Galvanic isolation, ±1200V
UVLO 16 - 18V, optimized for Infineon’s SiC JFET
discretes and power modules
Bootstrap mode (UVLO 8 - 10V, logic, MOS driver
capability, indicator output)
„
„
„
„
„
Safe turn off during start up and power
supply failures
3A rail-to-rail output
Extremely low propagation delay of typ. 80ns
Max.Tj=150°C
Green Packages DSO-16-20 (150mil) and
DSO-19-4 (300mil)
Low Voltage
Single channel isolated gate driver
Basic isolation according to EN60747-5-2,
recognized under UL1577
„ Fully functional at transient +/- 1420V and
static voltages of +/-1200V
„ High voltage side status feedback
„ 2A sink and source rail-to-rail output
„ Max. Tj = 150°C
„ Package SO16 300mil
„ Protection functions:
– Enchanced desaturation detection
– Active Miller clamp
– Under voltage lockout
– Shut
do wn
– Watchdog timer
„
1ED020I12-BT
Typical application 1EDI30J12CL/CP
High Voltage
1ED020I12-B2
Applications
Driver ICs
+5V to SGND
VCC1
CVCC
JFDrv
VCC2
SGND
Controller
GND1
MDrv
IN
VReg
EN
CLJFG
CVReg
CVEE2
Silicon Carbide
Single channel isolated gate driver
„ Same functions and features as 1ED020I12-B2
„ Functional isolation of 1200V
LV MOSFET
1ED020I12-F2
SiC JFET
Drain cascode
Dual channel isolated gate driver
„ Same functions and features as two times
1ED020I12-F2
„ Package SO36 300mil
VEE2
BSEN
1EDI30J12CL/CP
-25V to VCC2
Source cascode
Typical application 1ED020I12-F2
+5V
+15V
VCC2
/FLT
CDESAT
RST
+5V
CVCC2
DDESAT
Voltage
RDS(on)
Sales
name
JFET
Package
Driver
Driver Package
LV MOS
LV MOS
Package
GATE
VCC
GND
IN-
RG
1200
CLAMP
1ED020I12-F2
1200
35
50
70
100
70
100
IJW120R035T1
IJW120R050T1
IJW120R070T1
IJW120R100T1
IJC120R070T1
IJC120R100T1
TO247
TO247
TO247
TO247
Bare die
Bare die
1EDI30J12CL/CP
1EDI30J12CL/CP
1EDI30J12CL/CP
1EDI30J12CL/CP
1EDI30J12CL/CP
1EDI30J12CL/CP
DSO-16-20/19-4
DSO-16-20/19-4
DSO-16-20/19-4
DSO-16-20/19-4
DSO-16-20/19-4
DSO-16-20/19-4
BSC030P03NS3 G
BSC030P03NS3 G
BSC030P03NS3 G
BSC030P03NS3 G
IPC099P03N
IPC099P03N
SuperSO8
SuperSO8
SuperSO8
SuperSO8
Bare die
Bare die
Packages
IN+
DProt
GND2
VEE2
Power ICs
To control
logic
CoolSiC 1200V JFET portfolio and recommended driver / LV MOS for Direct Drive Topology
RDESAT
DESAT
IGBT
CVCC2
RDY
106
107
200V and 600V 3-phase gate driver
Ultra fast integrated bootstrap diode
„ Fully functional at neg. transient voltages down to -50V (500ns)
„ Programmable restart after over current protection
„ Shut down of all outputs in case of UVLO, OCP
„ Package SO28 300mil (600V) and
„ package TSSOP28 (200V)
„ Protection functions:
– Over current protection (OCP)
– Hard ware input interlocking
– Under voltage lockout (UVLO)
– Fixed hard ware dead time of
Typical application 6EDL04I06PT
high side and low side
– Enable function
VCC
– Pin compatible variants
HIN1,2,3
of first generation available
Applications
650V isolated high side half bridge gate driver
Galvanic isolation of high side driver
„ 2A sink current, 1 A source current
„ Fully functional at transient and static voltages
of +/-650V
„ Matched delay times of high side and low side
„ Max. Tj = 150°C
„ Package SO18 300mil
„ Protection function:
– Hardware input interlocking
– Under voltage lockout
„
„
LIN1,2,3
FAULT
EN
RRCIN
CRCIN
Low Voltage
1200V Isolated high side half bridge gate driver
Galvanic isolation of high side driver
„ 2A sink current, 1 A source current
„ Fully functional at transient and static voltages
of +/-1200V
„ Integrated operational amplifier and comparator
„ Matched delay times of high side and low side
„ Max. Tj = 150°C
„ Package SO18 300mil
„ Protection function:
– Hardware input interlocking
– Under voltage lockout
– Shut down function
„
6ED family – 2nd Generation
DC-Bus
VCC
HIN1,2,3
LIN1,2,3
FAULT
EN
VCC
HIN1,2,3
VB1,2,3
High Voltage
2ED020I06-FI
LIN1,2,3
HO1,2,3
FAULT
To Load
VS1,2,3
EN
LO1,2,3
RCIN
COM
ITRIP
VSS 6EDL04I06PT
Silicon Carbide
2ED020I12-FI
R Sh
VSS
1200 V
600 V
200 V
1ED020I12-F2
1ED020I12-B2
1ED020I12-FT
1ED020I12-BT
2ED020I12-F2
2ED020I12-FI
2ED020I06-FI
6ED003L06-F2
6EDL04I06NT
6EDL04I06PT
6EDL04N06PT
6ED003L02-F2
6EDL04N02PR
Packages
Topology
Io+/-
PG-DSO-16
PG-DSO-16
PG-DSO-16
PG-DSO-16
PG-DSO-36
PG-DSO-18
PG-DSO-18
PG-DSO-28
PG-DSO-28
PG-DSO-28
PG-DSO-28
PG-TSSOP-28
PG-TSSOP-28
Single
Single
Single
Single
Dual
Half Bridge
Half Bridge
3-Phase
3-Phase
3-Phase
3-Phase
3-Phase
3-Phase
2.0 - 2.0 A
2.0 - 2.0 A
2.0 - 2.0 A
2.0 - 2.0 A
2.0 - 2.0 A
1.0 - 2.0 A
1.0 - 2.0 A
180 - 380 mA
180 - 380 mA
180 - 380 mA
180 - 380 mA
180 - 380 mA
180 - 380 mA
Turn On
Propagation Delay
(max)
195.0 ns
195.0 ns
2,000.0 ns
2,000.0 ns
195.0 ns
105.0 ns
105.0 ns
800.0 ns
800.0 ns
800.0 ns
800.0 ns
800.0 ns
800.0 ns
Tj (max)
150.0 degC
150.0 degC
150.0 degC
150.0 degC
150.0 degC
150.0 degC
150.0 degC
125.0 degC
125.0 degC
125.0 degC
125.0 degC
125.0 degC
125.0 degC
Safety
UVLO_ON_max Fault Reporting
Isolation Typ*
Basic
Basic
-
12.6 V
12.6 V
12.6 V
12.6 V
12.6 V
13.5 V
13.5 V
12.5 V
12.5 V
12.5 V
9.8 V
12.5 V
9.8 V
DESAT
DESAT
DESAT
DESAT
DESAT
OCP
ITRIP
ITRIP
ITRIP
ITRIP
ITRIP
ITRIP
Shutdown /
Enable
Input Logic
Type
Interlock
Two Level Turn
Off
/RST
/RST
/RST
/RST
/RST
/SD
/SD
EN
EN
EN
EN
EN
EN
pos/neg
pos/neg
pos/neg
pos/neg
pos/neg
pos
pos
neg
neg
pos
pos
neg
pos
–
–
–
–
–








–
–


–
–
–
–
–
–
–
–
–
Power ICs
Products
IGBT
HV Gate Driver ICs Product Type
Packages
* Certified according to DIN EN 60747-5-2
108
109
Top and bottom side cooling of SMD devices
ThinPAK new leadless SMD package for high voltage MOSFETs
For LV MOSFETs different SMD packages like SuperSO8 and CanPAK™ are available. If the cooling system
is designed for main heatflow to the PCB both packages will show similar thermal performance. If the
main heat flow is to the top side the CanPAK™ is the better choice since the thermal resistance to the
top side is lower (Rth_top_CanPAK ~ 1 K/W, Rth_top_SuperSO8 ~ 20 K/W).
„
Bottom side cooling
Top side cooling
top
Heatsink
top
60% footprint reduction – 80% height reduction
Package
D2PAK
bottom
Thermal performance
CanPAK™ ~ SuperSO8
PPCB < Pheatsink
bottom
Thermal performance
CanPAK™ > SuperSO8
10 x 15 x 4.4mm³
Example: High performance Server
(PCB: 8 layer, 70 μm)
ThinPAK
High Voltage
PPCB > Pheatsink
8 x 8 x 1mm³
Example: Motherboard (PCB 4 layer, 35 μm)
with high performance heatsink
Silicon Carbide
PCB
The new package features a very small footprint of only 64 mm2 (vs. 150 mm2 for the D2PAK) and a
very low profile with only 1 mm height (vs. 4.4 mm for the D2PAK). This significantly smaller package
size with ist benchmark low parasitic inductances can be used as a new and effective way to
decrease system solution size in power-density driven systems.
A well designed thermal system is required to achieve high power handling capability.
The recommended design is a thin PCB with may vias and a heatsink attached to the backside of the
PCB. A high number of thermal vias is needed to reduce the thermal conduction resistance through
the board.
Low Voltage
„
Applications
Packages
Thermal cooling system for ThinPAK 8x8
ThinPAK 8x8
PCB
with
thermal
vias
Packages
Power ICs
IGBT
Thermal Interface material
heatsink
110
111
Applications
PowerStage 3x3 and PowerStage 5x6
Save space, minimize losses, boost efficiency
PowerStage 3x3 and PowerStage 5x6 are leadless SMD packages, which integrate the low-side and
high-side MOSFETs of a synchronous DC/DC converter into a 3.0x3.0 mm2 or 5.0x6.0 mm2 package
outline.Designers are able to shrink their designs up to 85% by replacing two separate discrete
packages such as SO-8 or SuperSO8 with this new package.
High Voltage
Low Voltage
Both, the small outline and the interconnection of the two MOSFETs within the package minimize the
loop inductance which boosts efficiency. With the new OptiMOS™ technology PowerStage 3x3 and
PowerStage 5x6 achieve a peak efficiency of 93.5%. PowerStage 3x3 can handle an application current
up to 12.5A and PowerStage 5x6 up to 30A.
Silicon Carbide
CoolMOS™ in ThinPAK 8 x 8
The new leadless SMD package for CoolMOS™
The new IGBT RCD technology in combination with an efficient cooling system allows to use small SMD
packages which enable to build compact systems with increased power density.
In order to improve the heat dissipation, thermal vias are integrated in the PCB under the device case
which results in a low thermal resistance to the opposite side of the PCB. A heatsink complements the
cooling system. Isolation to the heatsink is realized with a thermal foil. With this cooling system power
dissipation up to 7 to 10 W / IGBT is achievable which corresponds to ~ 2 kW application systems.
Infineon Technologies introduces the ThinPAK 8 x 8, a new leadless SMD
package for HV MOSFETs. The new package has a very small footprint of only 64 mm²
(vs. 150 mm² for the D2PAK) and a very low profile with only 1 mm height (vs. 4.4mm
for the D2PAK). This significantly smaller package size in combination with its
benchmark low parasitic inductances can be used as a new and effective way to
decrease system solution size in power-density driven designs.
■
■
Power ICs
Key features and benefits of Infineon’s ThinPAK:
■ Extremely small footprint (8 x 8 mm²) and very low profile (1 mm)
■ 60 % reduced board space consumption and highly increased power density
■ Very easy to use and short commutation loop
■ Separate driver source pin and lowest parasitic inductance
IGBT
New IGBT technology RCD allows highest power density with
small SMD packages
Very smooth switching waveform
Halogen free mold compound and RoHS compliant
112
[ www.infineon.com/coolmos ]
Packages
For further information please visit our website:
113
Package (JEITA-code)
X
LxWxH
PIN-Count
15.5 x 6.5 x 2.3
IPAK SL (TO-251 SL)
3
10.7 x 6.5 x 2.3
I2PAK (TO-262)
3
25.1 x 10 x 4.4
TO-220 real 2pin
2
29.15 x 10.0 x 4.4
TO-220 2pin
2
29.1 x 9.9 x 4.4
TO-220 3pin
3
29.15 x 10.0 x 4.4
TO-251
Package Outline
6.5 +0.23
-0.15
A
21.7 x 9.9 x 4.4
6
26.1 x 9.9 x 4.4
3
40.15 x 15.9 x 5.0
DPAK (TO-252)
3
9.9 x 6.5 x 2.3
Reverse DPAK (Rev. TO-252)
3
9.7 x 6.6 x 2.34
4.96 ±0.26
5.41±0.37
6
TO-247
2.3 +0.11
-0.14
B
0.9 -0.44
0.1
9.3 +0.35
-0.41
29.6 x 10.5 x 4.7
TO-220-6-47
6.22 -0.25
3
TO-220-6-46
1 +0.37
-0.11
5.4 +0.1
-0.45
TO-220 FullPAK
Applications
IPAK (TO-251)
3
All Dimensions in mm
Low Voltage
Packages
DPAK 5pin (TO-252 5pin)
5
9.9 x 6.5 x 2.3
D2PAK (TO-263)
3
15.0 x 10.0 x 4.4
D2PAK 7pin (TO-263 7pin)
7
15.0 x 10.0 x 4.4
SO-8/SO-8 dual
8
5.0 x 6.0 x 1.75
SO-16/12
12
10.0 x 6.0 x 1.75
SO-14
14
0.5 +0.1
0.9 ±0.25
8.75 x 6.0 x 1.75
0.25 M A B
3 x 0.75 +0.14
-0.11
2.29
1.0 +0.14
-0.10
4.57
SO-16
16
10.0 x 6.0 x 1.75
SO-18
18
12.8 x 10.3 x 2.65
SO-19
19
12.8 x 10.3 x 2.65
SO-20
20
12.8 x 10.3 x 2.65
SC59
3
3.0 x 2.8 x 1.1
High Voltage
All metal surfaces tin plated, except area of cut.
SOT-23
3
2.9 x 2.4 x 1.0
Marking Layout
4.5 x 4.0 x 1.5
SOT-223
4
6.5 x 7.0 x 1.6
SOT-323
3
2.0 x 2.1 x 0.9
SOT-363
6
2.0 x 2.1 x 0.9
TSOP-6
6
2.9 x 2.5 x 1.1
S3O8
8
3.3 x 3.3 x 1.0
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
Manufacturer
TISON (PowerStage 5x6)
8
5.0 x 6.0 x 1.0
WISON (PowerStage 3x3)
8
3.0 x 3.0 x 0.8
SuperSO8
8
5.15 x 6.15 x 1.0
SuperSO8 dual
8
5.15 x 6.15 x 1.0
VSON (ThinPAK)
4
8.0 x 8.0 x 1.0
Production lot code
Pin 1
CanPAK™ S-Size
6
Type code
Date code (YWW)
1234567
AA
R
Silicon Carbide
SOT-89
3
4.8 x 3.8 x 0.65
Packing
6.3 x 4.9 x 0.65
TDSON-10
10
3.0 x 3.0 x 0.9
DIP-7
7
9.52 x 8.9 x 4.37
DIP-8
8
9.52 x 8.9 x 4.37
DIP-14
14
19.5 x 8.9 x 4.37
DIP-20
20
Pieces/Tube: 75
IGBT
CanPAK™ M-Size
7
24.6 x 9.9 x 4.2
(7)
Window
33.5 -0.5
TSSOP-48
12.5 x 6.1 x 1.1
36
15.9 x 11.0 x 3.5
IQFN-40
40
6.0 x 6.0 x 0.8
TSSOP-28
28
9.7 x 6.4 x 1.2
DSO-28
28
18.1 x 10.3 x 2.65
VQFN-68
68
10.0 x 10.0 x 0.9
Power ICs
48
DSO-36
114
All dimensions in mm
Packages
All products are available in green
(RoHS compliant).
115
TO-251-3
DPAK
0.1
0.25
M
A B
0.1
0.9 ±0.25
0.5 +0.08
-0.04
0.9 ±0.25
0...0.15
0.75 +0.14
-0.11
0.25 M A B
0.9 +0.24
-0.1
3 x 0.75 +0.14
-0.11
0.9 +0.08
-0.44
Low Voltage
3.5 ±0.1
0.5 +0.39
-0.04
B
4.96 ±0.26
6.22 -0.25
B
5 ±0.1
2.3 +0.11
-0.14
+0.1
5.4 -0.4
1 +0.25
-0.10
2.3 +0.09
-0.12
A
9.9 +0.58
-0.50
5.4 +0.1
-0.45
1 ±0.1
6.22 -0.25
5.24 ±0.2
1±0.1
6.5 +0.23
-0.15
6.5 +0.23
-0.10
1.44 ±0.26
A
Applications
Package Outline
5.43 ±0.41
0.8 +0.2
-0.29
Package Outline
0.5 +0.1
-0.04
2.29
4.57
2.29
4.57
Foot Print
High Voltage
All metal surfaces tin plated, except area of cut.
5.8
1.2
5.76
Production lot code
Pin 1
Silicon Carbide
Type code
Date code (YWW)
1234567
AA
R
Marking Layout
Packing
Type code
Date code (YWW)
1234567
AA
M
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
Manufacturer
Pieces/Tube: 75
Production lot code
Pin 1
IGBT
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
Manufacturer
2.2
10.6
6.4
Marking Layout
Packing
(7)
Window
Reel ø330mm = 2.500 Pieces/Reel
0.3
8
6.9
Power ICs
10.5
16 ±0.3
33.5 -0.5
2.5
2.7
All dimensions in mm
Packages
All dimensions in mm
116
117
Reverse DPAK
DPAK 5pin
0.51 MIN.
4.56
0.1
0.25
A B
6.4
2.2
2.2
10.6
6.4
0.8
Marking Layout
1234567
AA
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
Manufacturer
Pin 1
Type code
Date code (YWW)
Pin 1
Production lot code
Packing
Type code
Date code (YWW)
1234567
AA
M
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
Manufacturer
IGBT
Marking Layout
Silicon Carbide
5.36
Production lot code
Packing
Reel ø330mm = 2.500 Pieces/Reel
0.3
0.3
8
6.9
10.5
16 ±0.3
10.5
16 ±0.3
8
6.9
2.5
2.7
Power ICs
10.6
5.8
1.2
5.76
2.5
2.7
All dimensions in mm
Packages
All dimensions in mm
M
Foot Print
5.8
Reel ø330mm = 2.500 Pieces/Reel
0.5 +0.08
-0.04
5 x 0.6 ±0.1
High Voltage
Foot Print
5
1.14
0.51 +0.07
-0.05
2 x 2.29
1 ±0.1
0...0.15
0.8 ±0.15
0.6 ±0.09
1
0.5
A
6
0.15 MAX.
per side
0.0...0.15
0.8 +0.09
-0.17
0.25 M A B
1 ±0.1
0.89 +0.09
-0.43
B
5.4 ±0.1
(4.24)
2.34 +0.07
-0.18
5.03 ±0.18
9.98 ±0.5
6.22 -0.2
5.25 ±0.25
9.7 +0.78
-0.3
0.9 ±0.25
2.3 +0.05
-0.10
6.5 +0.15
-0.10
5.43 ±0.41
+0.14
6.1 +0.12
-0.13 1 -0.10
6.6 +0.13
-0.20
Applications
Package Outline
Low Voltage
Package Outline
118
119
TO-220 2pin
TO-220 3pin
Package Outline
+0.36
4.4 ±0.1
2x
0.75 ±0.1
5.08
0.9 ±0.25
0.25 M A B C
M
A B
Low Voltage
9.25 -0.74
2.4 +0.32
-0.25
High Voltage
2 x 2.54
+0.11
0.75 -0.10 3x
0.25
1.05 ±0.1
Marking Layout
Pin 1
12345678
Date code (YWW)
Production lot code
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
Mold chassis
Identification code
Manufacturer
A 39
Pin 1
Packing
Packing
Pieces/Tube: 50
Pieces/Tube: 50
Type code
Date code (YWW)
Production lot code
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
Mold chassis
Identification code
Silicon Carbide
A 39
AA
Manufacturer
Type code
IGBT
12345678
AA
Marking Layout
+0.10
0.5 -0.17
1.18 ±0.23
2.4
+0.20
0.1
4.8 MAX.
0.5 ±0.1
0...0.15
+0.17
4.4 -0.10
+0.13
1.27 -0.10
+0.15
17±0.3
15.65 -0.84
±
3.5 ±0.2
+0.30
0.36 M A B
+0.19
3.7 -0.1
2.8 ±0.2
1.27 ±0.1
0.05
2.4 ±0.1
B
+0.1
8.5 -2
12.95 -0.76
2.8 ±0.2
B
0...0.3
C
A
+0.36
9.9 -0.30
13.5 ±0.5
12.95
17 ±0.3
3.7 -0.15
15.65 ±0.3
10 -0.30
A
13.5 ±0.5
10 ±0.2
9.9 ±0.2
8.5
1.29 ±0.1
Applications
Package Outline
Window
(7)
(7)
Window
33.5 -0.5
Power ICs
33.5 -0.5
All dimensions in mm
Packages
All dimensions in mm
120
121
TO-220 FullPAK
TO-220-6-46
2.7 ±0.15
B
8.6 ±0.3
1)
7.62
0...0.15
0.25
M
0.5 ±0.1
A B
6 x 0.6 ±0.1
2.4
5.3 ±0.3
4 x 1.27
1.08 ±0.43
2.54
0.381
1) Shear and punch direction no burrs this surface
Back side, heatsink contour
All metal surfaces tin plated, except area of cut.
A B
M
8.4 ±0.3
Marking Layout
Type code
Date code (YWW)
Production lot code
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
1234567890
AA
Manufacturer
Pin 1
a 39
AA
Manufacturer
Type code
Date code (YWW)
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
12345678
Pin 1
Mold chassis Identification code
Packing
Pieces/Tube: 25
Pieces/Tube: 50
IGBT
Fab code
Packing
Silicon Carbide
Marking Layout
High Voltage
3x
0.7 +0.15
-0.05
Low Voltage
2.57 ±0.15
1.3 +0.1
-0.02
0.05
3.3 ±0.15
-0.152
1.14 ±0.19
4.4
A
8
12.1±0.3
45°
9.681 +0.149
-0.151
0.36
M
B A
+0.2
13.6 ±0.15
1.23 ±0.28
0.5 +0.13
-0.10
0.99 ±0.34
10.2 ±0.3
6.6
3 +0.2
-0.05
A
3.3 -0.15
15.99 -0.14
+0.16
10.5 ±0.15
9.9
7.5
4.7 ±0.15
(0.8)
B
Applications
Package Outline
9.2 ±0.2
Package Outline
Window
35 ±0.2
Power ICs
33 ±0.4
5.6 ±0.4
13 ±0.2
Window
All dimensions in mm
Packages
All dimensions in mm
122
123
TO-220-6-47
TO-247
Package Outline
+0.23
0.25
6 x 0.6 ±0.1
M
+0.06
5.94 -0.45
4.39 ±0.71
0.5 ±0.1
A B
2.4
5.3 ±0.3
4 x 1.27
+0.15
ø3.60 ±0.1
0.61 M B A
4.32 -0.22
7.62
0...0.15
0.25 M A B
8.4 ±0.3
+0.41
0.62 ±
2.03 ±0.13
3 ±0.13
2.4 ±0.14
+0.46
2.92 -0.05
High Voltage
5.44
Marking Layout
Type code
Date code (YWW)
Production lot code
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
1234567890
a 39
AA
Manufacturer
Pin 1
Type code
Manufacturer
Mold chassis Identification code
G = Green Product / RoHS compliant
H = Halogen-free + RoHS compliant
Date code (YWW)
123456789
AA
Pin 1
Packing
Pieces/Tube: 50
Pieces/Tube: 25
Fab code
IGBT
Packing
Silicon Carbide
Marking Layout
1.2 ±0.13
2 -0.10
1) Shear and punch direction no burrs this surface
Back side, heatsink contour
All metal surfaces tin plated, except area of cut.
5.02 ±0.19
+0.13
2.03 -0.18
Low Voltage
8.6 ±0.3
1)
20.9
0.05
9.2 ±0.2
3.7 -0.15
B
B
A
1.8 ± 0.8
20.06 ±0.26
2.8 ±0.2
1.3 +0.1
-0.02
15.9 -0.20
13.63 ±0.53
6.17 ±0.13
1.2 -0.25
+0.15
4.4
16.95 ±0.7
A
13
15.6 ±0.3
17.5 ±0.3
9.9 ±0.2
9.5 ±0.2
7.5
6.6
Applications
Package Outline
7
13 ±0.2
Window
39
Power ICs
35 ±0.2
All dimensions in mm
Packages
All dimensions in mm
124
125
I2PAK
D2PAK
Package Outline
Applications
Package Outline
+0.17
10 -0.2
A
+0.1
+0.13
+0.15
0.1 -0.1
1.05 ±0.1
3 x 0.75 +0.114
-0.100
0.884 ±0.234
0.254
M
A B
M
A B
1.5˚ ±6.5˚
5.08
+0.318
2.4 -0.250
2 x 2.54
0.25
2.54
0.5 +0.10
-0.17
+0.15
0.5 -0.17
0.75 ±0.1
1.05 +0.043
-0.100
Low Voltage
1.175 ±0.225
13.5 ±0.5
4.55 +0.25
+0.3
2.7 -0.41
+0.48
1.3 -0.3
+0.35
1.27 -0.1
7.55 -0.45
15 -0.39
+0.88
9.25 +0.20
-0.741
B
8.5 -2
+0.2
1.27 +0.13
-0.10
1 +0.727
4.4 -0.1
+0.31
4.4 +0.172
-0.100
7.55 -0.65
+0.1
8.5 -2
B
A
9.25 -0.74 1 +0.6
-0.3
10 +0.363
-0.300
Foot Print
High Voltage
All metal surfaces tin plated, except area of cut.
10.8
4.6
16.15
9.4
Marking Layout
1.35
Type code
Pin 1
Silicon Carbide
Date code (YWW)
Production lot code
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
Mold chassis Identification code
A 39
AA
Manufacturer
3.75
Marking Layout
12345678
Manufacturer
AA
A 39
Packing
Pieces/Tube: 50
Pin 1
Type code
Date code (YWW)
Production lot code
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
Mold chassis
Identification code
IGBT
12345678
Packing
(7)
Window
Reel ø330mm = 1.000 Pieces/Reel
0.3
12
10.3
Power ICs
4.75
4.9
All dimensions in mm
Packages
All dimensions in mm
24 ±0.3
16.1
33.5 -0.5
126
127
D2PAK 7pin
SO-8
Package Outline
Applications
Package Outline
6 x 0.6 ±0.1
0.25
6 x 1.27
M
A B
+0.15
0.5 -0.17
1.5˚ ±6.5˚
5
Index
Marking 1
4
5 -0.21)
8˚ MAX.
.03
C
0.64 ±0.25
0.25 M D C 8x
8
0.2 +0.05
-0
1.75 MAX.
4 -0.2
19˚ MAX.
6 ±0.2
Low Voltage
0.75 ±0.25
0.1 8x
0.41 +0.1
-0.06
+0.3
2.7 -0.41
+0.2
1.27
+0.15
0.1 -0.1
+0.48
7.55 -0.65
+0.35
B
0.1
1.3 -0.3
1 -0.3
+0.6
8.5 -2
9.25 -0.74
+0.88
15 -0.39
+0.13
1.27 -0.1
A
+0.1
0.1 MIN.
+0.31
10 -0.2
1.5 +0.15
-0.25
0.33 +0.17
-0.10 x 45˚
+0.17
4.4 -0.1
D
Index Marking (Chamfer)
Foot Print
High Voltage
Foot Print
10.8
1.31 ±0.1
4.6
5.69 ±0.1
16.15
9.4
0.65 ±0.1
1.27
0.47
Marking Layout
Silicon Carbide
0.8
Marking Layout
Type code
Date code (YWW)
Production lot code
A 39
1234567
Pin 1 Marking
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
Packing
Reel ø330mm = 2.500 Pieces/Reel
Pieces/Tube: 100
0.3
5.2
16.1
6.4
12 ±0.3
24 ±0.3
8
1.75
Power ICs
0.3
12
4.1
Packing
Type code
Date code (YYWW)
Mold chassis
Identification code
Pin 1
Reel ø330mm = 1.000 Pieces/Reel
123456
IGBT
Manufacturer
AA
12345678
7.7
2.1
10.3
4.9
All dimensions in mm
Packages
All dimensions in mm
4.75
128
129
SO-16/12
SO-14
1
M
10 -0.2
6 ±0.2
14
Applications
x 45˚
.01
8˚
C
0.1
0.2 M A C 14x
0.41 +0.1
-0.08
0.64 ±0.25
6 ±0.2
8
D C 12x
7
1
8.75 -0.2 1)
6
A
Index Marking
D
Foot Print
5.69
5.69
1.31
0.65
1.31
0.65
High Voltage
Foot Print
1.27
Silicon Carbide
1.27
Marking Layout
Marking Layout
Date code (YYWW)
Date code (YYWW)
Type code
Mold compound code
Manufacturer
1234567890123
1234
LMC
XXXXXXXXXXX
Mold compound code
12345678901
LMC
12
XXXXXXXXXXX
Manufacturer
Lot number
Assembly site code (L for AIT)
Pin 1 Marking
Lot number
Assembly site code
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
Packing
Reel ø330mm = 2.500 Pieces/Reel
0.3
8
9.5
4.1
10.3
16 ±0.3
6.5
Pieces/Tube: 50
7.7
Power ICs
Pieces/Tube: 50
0.3
8
16 ±0.3
Reel ø330mm = 2.500 Pieces/Reel
4.1
Packing
G = Green Product / RoHS compliant
H = RoHS compliant + Halogen-free
Pin 1 Marking
IGBT
Type code
7.7
1.8
2.3
6.5
1.8
2.3
All dimensions in mm
Packages
All dimensions in mm
+0.08
-0.17
0.2 +0.05
-0
0.1 MIN.
1.75 MAX.
.01
8˚ MAX.
0.64 ±0.25
7
12
Index
Marking
0.1 2x
8.89
0.2
1.27
C
3.81
0.41 +0.1
-0.05
4 -0.2
0.33
4 -0.2
Low Voltage
1.27
0.33 x 45˚
0.2 +0.05
-0
(1.5)
1.75 MAX.
Package Outline
0.1 MIN.
STAND OFF
Package Outline
130
131
SO-16/12
SO-18
8˚
8˚
1.27
±0.25
1)
Seating Plane
18x
0.4 ±0.1
6 ±0.2
9 x 1.27 = 11.43
9
16
18
1
11
0.4 +0.87
10.3 ±0.3
Ejector Mark
Depth 0.2 MAX.
8
1)
10 +0.06
-0.2
A
Index Marking
Index
Marking
1
12.8 -0.2
10
1) Does not include plastic or metal protrusion of 0.15 mm max.
Foot Print
5.69
9.73
1.31
1.67
0.65
0.65
High Voltage
Foot Print
1.27
Silicon Carbide
1.27
Marking Layout
Marking Layout
Date code (YYWW)
Type code
Mold compound code
Manufacturer
1234567890123
1234
LMC
XXXXXXXXXXX
Manufacturer
Assembly site code (L for AIT)
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
Pin 1 Marking
1234567890
1234567890
XXXXXXXXXXX
Lot number
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
Lot number
Packing
Pieces/Tube: 50
Reel ø330mm = 1.000 Pieces/Reel
13.3
24 ±0.3
4.1
16 ±0.3
10.3
6.5
0.3
12
0.3
8
7.7
Pieces/Tube: 39
Power ICs
Reel ø330mm = 2.500 Pieces/Reel
6.5 -0.2
Packing
Pin 1 Marking
Date code (YYWW)
IGBT
Type code
15.4
1.8
2.3
10.9
2.7
3.2
All dimensions in mm
Packages
All dimensions in mm
Applications
+0.05
-0.03
0.64
Low Voltage
C
0.2 M A C 16x
0.35 x 45˚
7.6 -0.2
0.25
Gauge Plane
0.1
4 -0.2
1)
0.2
0.1 MIN.
1.75 MAX.
1.27
0.40 +0.11
-0.05
0.33 +0.17
-0.08 x 45˚
2.65 MAX.
Package Outline
0.2 -0.1
STAND OFF
2.45 -0.2
Package Outline
132
133
SO-19
SO-20
Index
Marking
1
11
8˚
20
Index
Marking
1
11
12.8 -0.2
10
0.4 +0.87
10.3 ±0.3
1) Does not include plastic or metal protrusion of 0.15 max. per side
Foot Print
9.73
9.73
1.27
Marking Layout
Silicon Carbide
1.27
Marking Layout
Type code
Infineon
1234567890
1234567890
XXXXXXXXXXX
Manufacturer
1234567890
1234567890
XXXXXXXXXXX
Pin 1 Marking
Type code
Date code (YYWW)
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
Lot number
Packing
10.9
Pieces/Tube: 39
Reel ø330mm = 1.000 Pieces/Reel
12
0.3
13.3
24 ±0.3
15.4
10.9
2.7
3.2
Pieces/Tube: 39
Power ICs
0.3
13.3
24 ±0.3
12
6.5 -0.2
Reel ø330mm = 1.000 Pieces/Reel
6.5 -0.2
Packing
Pin 1 Marking
Date code (YYWW)
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
Lot number
IGBT
Manufacturer
15.4
2.7
3.2
All dimensions in mm
Packages
All dimensions in mm
1.67
0.65
1.67
0.65
High Voltage
Foot Print
Applications
2.65 MAX.
0.2 -0.1
STAND OFF
2.45 -0.2
Seating Plane
20x
9 x 1.27 = 11.43
10
12.8 -0.2
1.27
1)
0.35+0.15
Low Voltage
19
0.4 +0.87
10.3 ±0.3
0.35 x 45˚
7.6 -0.2
0.25
Gauge Plane
9 x 1.27 = 11.43
Seating Plane
19x
0.23 +0.09
1.27
0.4 ±0.1
0.25
Gauge Plane
2.65 MAX.
0.35 x 45˚
7.6 -0.2
8˚ MAX.
Package Outline
0.2 -0.1
STAND OFF
2.45 -0.2
Package Outline
134
135
SC59
SOT-23
Package Outline
0.4 +0.1
-0.05
1)
2
C
0.95
2
0.95
+0.1
0.15 -0.0
5
0.1 M
0.95
(0.55)
5
A
0...8˚
1.9
0.2
0.25 M B C
A
M
1) Lead width can be 0.6 max. in dambar area
SC59-PO V05
Foot Print
0.08...0.1
1.3 ±0.1
1
+0.2
acc. to
DIN 6784
Low Voltage
2.8 +0.2
-0.1
0.45 ±0.15
3
3
+0.1
0.1 MAX.
10˚ MAX.
0.2
1.6 +0.15
-0.3
0.1
M
B
10˚ MAX.
0.1
3x0.4 +0.05
-0.1
1
0.15 MAX.
1 ±0.1
0.15 MIN.
3 ±0.1
2.9 ±0.1
2.4 ±0.15
1.1 ±0.1
Applications
Package Outline
High Voltage
Foot Print
0.8
0.8
1.2
0.9
0.9
1.3
1.3
0.9
0.9
0.8
1.2
Marking Layout
Silicon Carbide
SC59-FPR V05
Marking Layout
Manufacturer
Type code
123
Date code (MY)
12 S
Type code
Date code (MY)
IGBT
Pin 1
SC59-MK V01
Packing
Reel ø180mm = 3.000 Pieces/Reel
Reel ø330mm = 10.000 Pieces/Reel
Reel ø180mm = 3.000 Pieces/Reel
Reel ø330mm = 10.000 Pieces/Reel
0.2
4
0.2
0.9
Pin 1
3.18
1.32
Pin 1
3.15
8
2.65
8
3.28
2.13
4
Power ICs
Packing
1.15
SC59-TP V04
All dimensions in mm
Packages
All dimensions in mm
136
137
SOT-89
SOT-223
Package Outline
1)
3.5 ±0.2
7 ±0.3
2.75 +0.1
-0.15
10˚ MAX.
3
1.5
1
0.35 ±0.1
0.45 +0.2
-0.1
3
B
0.15
M
3
2
2.3
0.7 ±0.1
B x3
4.6
0.2 B
0.25 M A
1) Ejector pin markings possible
Foot Print
Low Voltage
2
4
1 ±0.2
1
0.15
4 ±0.25
1 ±0.1
1)
2.5 ±0.1
+0.2
acc. to
DIN 6784
0.1 MAX.
3 ±0.1
1.6 ±0.2
0.2 MAX.
0.25 ±0.05
1.6±0.1
6.5 ±0.2
A
1.5 ±0.1
15˚ MAX.
B
0.5 MIN.
4.5 ±0.1
45˚
Applications
Package Outline
0.28 ±0.04
0...10˚
0.25 M B
Foot Print
2.0
0.8
0.8
Silicon Carbide
1.4
1.2
1.0
4.8
2.5
1.4
High Voltage
3.5
1.2 1.1
0.7
Marking Layout
Marking Layout
Pin 1
Manufacturer
S
12
123456
Type code
Pin 1
Date code (MY)
Packing
Packing
Reel ø180mm = 1.000 Pieces/Reel
Reel ø330mm = 4.000 Pieces/Reel
Reel ø180mm = 1.000 Pieces/Reel
Reel ø330mm = 4.000 Pieces/Reel
0.2
0.3 MAX.
8
4.6
7.55
12
8
Date code (YYWW)
IGBT
S
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
Pin 1
1.6
Pin 1
6.8
1.75
All dimensions in mm
Packages
All dimensions in mm
4.3
Power ICs
Type code
12
Manufacturer
123
138
139
Package Outline
Package Outline
0.1
M
A
2
Pin 1
marking
0.15 +0.1
-0.05
0.65 0.65
0.2
6
5
4
1
2
3
0.1 MAX.
M
0.1
1.25 ±0.1
0.1 MIN.
2.1 ±0.1
3
0.1
M
0.15 +0.1
-0.05
0.65 0.65
A
0.2
M
A
Foot Print
High Voltage
Foot Print
A
1.25 ±0.1
0.1
6x
0.2 -0.05
0.1 MIN.
3x
0.9 ±0.1
+0.1
0.1 MAX.
2.1 ±0.1
0.3 +0.1
-0.05
1
2 ±0.2
0.9 ±0.1
2 ±0.2
Applications
SOT-363
Low Voltage
SOT-323
0.3
1.6
0.8
1.6
0.9 0.7
0.6
0.65
Marking Layout
Manufacturer
12 S
12
Date code (MY)
Pin 1 marking
Type code
Pin 1
Packing
Packing
Reel ø180mm = 3.000 Pieces/Reel
Reel ø330mm = 10.000 Pieces/Reel
Reel ø180mm = 3.000 Pieces/Reel
Reel ø330mm = 10.000 Pieces/Reel
Type code
Pin 1
marking
1.1
2.15
1.1
All dimensions in mm
Packages
All dimensions in mm
2.15
0.2
2.3
8
8
2.3
Pin 1
Date code (MY)
4
0.2
4
S
IGBT
Manufacturer
Power ICs
Marking Layout
Silicon Carbide
0.65
0.65
140
141
TSOP-6
S3O8
0.95
0.2
M
B 6x
0.15 +0.1
-0.06
0.2
1.9
M
A
0.25
A
M
0.65
0.5
High Voltage
Foot Print
Foot Print
Remark: Wave soldering possible dep.
on customers process conditions
0.8
3.8
0.65
0.34
2.36
2.9
1.9
2.29
0.95
Silicon Carbide
0.31
Marking Layout
Marking Layout
12
Date code (MY)
1234567
Date code (YWW)
AA
Manufacturer
Pin 1 Marking
Packing
Packing
Reel ø180mm = 3.000 Pieces/Reel
Reel ø330mm = 10.000 Pieces/Reel
Reel ø330mm = 5.000 Pieces/Reel
IGBT
Production lot code
Type code
8
0.3
0.2
3.6
4
Index
Marking
2.7
8
Pin 1
marking
Type code
1.2
1.15
All dimensions in mm
Packages
3.15
3.6
Power ICs
Pin 1 Marking
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
12
S
Manufacturer
All dimensions in mm
0.34 ±0.1
A B
Low Voltage
0.35 +0.1
-0.05
2.3 ±0.15
0.43 ±0.13
3
3.3 ±0.1
0.725 ±0.135
2
0.32 ±0.12
3.3 ±0.1
1
A
1.6 ±0.1
4
10˚ MAX.
5
0.25 ±0.1 10˚ MAX.
6
2.5 ±0.1
(0.35)
0.465 ±0.135
1.705 ±0.105
0.1 MAX.
1±0.1
1.1 MAX.
B
0.2 ±0.1
2.9 ±0.2
(2.25)
Applications
Package Outline
Package Outline
142
143
S3O8 fused leads
PowerStage 5x6
2.15 ±0.1
6.0 ±0.1
4.0 ±0.1
Low Voltage
0.60 0.1
0.55 ±0.15
2.11 ±0.1
3.3 ±0.1
0.405 0.105
2.29 ± 0.1
3.3 ±0.1
2.9 ±0.1
0.2 ±0.1
1.22 ±
B
0.92 ±0.1
A
0.48 ±0.1
0.2 ±0.1
1 ±0.1
5.0 ±0.1
0.65
A
Applications
Package Outline
1±0.1
Package Outline
0.41 ±0.1
1.64 ± 0.1
1.27 (BSC)
0.34 ±0.1
0.25 M A B
Foot Print
High Voltage
Foot Print
2.29
0.80
0.34
3.9
1.0
2.51
Drawing available on request
0.50
0.31
Marking Layout
Marking Layout
1234567
12345678
Type code
AA
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
(YWW)
Manufacturer
Pin 1 Marking
AA
Date code (YWW)
Mold chassis
Identification code
A
Pin 1 Marking
Production lot code
Type code
Production lot code
Manufacturer
Packing
Reel ø330mm = 5.000 Pieces/Reel
Index
Marking
0.3
1.2
1.2
6.3
All dimensions in mm
Packages
3.6
8
Index
Marking
12
3.6
0.3
5.3
8
Power ICs
Reel ø330mm = 5.000 Pieces/Reel
12 ±0.3
Packing
IGBT
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
All dimensions in mm
Silicon Carbide
1.64
144
145
PowerStage 3x3
SuperSO8
+0.2
3.6 ±0.2
0.25 M A B
Foot Print
High Voltage
4.7
0.7
0.64
0.63
0.62
4.46
0.65
6.85
Marking Layout
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
1234567
Type code
AA
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
(YWW)
Manufacturer
Pin 1 Marking
12345678
Date code (YWW)
AA
Pin 1 Marking
Production lot code
A
Mold chassis
Identification code
Manufacturer
Production lot code
Packing
Type code
IGBT
Marking Layout
Silicon Carbide
0.35 ± 0.1
0.7
0.5
0.33 0.1
0.95 0.1
0.49 0.1
0.65 0.1
2.45 ± 0.1
3.0 ±0.1
3.0 ±0.1
A
5
1.2
0.32 0.1
0.65
0.05 - 0.05
0.2 ±0.1
0.8 ±0.1
Foot Print
Low Voltage
0.32 0.1
3 x 1.27
0.44 ±0.1
0.55 ±0.1
10˚±1.5˚
5.9 ±0.2
6.15 ±0.2
0.65 0.1
0.33 0.1
0.95 0.1
0.49 0.1
3.0 ±0.1
4.2
0.25 ±0.1
2.45 ± 0.1
0.35 ± 0.1
Packing
Reel ø330mm = 5.000 Pieces/Reel
Index
Marking
5.4
0.3
1.7
1.2
1.3
6.6
1.3
All dimensions in mm
Packages
3.6
8
12
3.6
0.3
Power ICs
8
5.8
12 ±0.3
Reel ø330mm = 5.000 Pieces/Reel
All dimensions in mm
B
0.12 ±0.1
3.0 ±0.1
A
1 ±0.1
A
±
5.15 ±0.2
0.05 - 0.05
0.2 ±0.1
0.65
Applications
Package Outline
0.8 ±0.1
Package Outline
146
147
VSON
SuperSO8 dual
0.2 ±0.1
0.06
1.27
B
M
1
0.05
4
0.44 ±0.1
PG-VSON-4-1-PO V01
3.6 ±0.2
5.9 ±0.2
1 ±0.01
2
0.6 ±0.1
5
0.25
M
Low Voltage
0.12 ±0.1
8
2.75 ±0.1
0.5 ±0.1
8 ±0.1
4.75 ±0.1
0.02
B
4.3 ±0.1
B
0.25 ±0.1
10˚±1.5˚
A
A
0.4 ±0.1
7.2 ±0.1
0.55 ±0.1
1 ±0.1
8 ±0.1
0.55 ±0.1
1±0.1
5.15 ±0.2
6.15 ±0.2
0...0.05
Applications
Package Outline
Package Outline
A B
Foot Print
Foot Print
0.7
0.63
4.7
0.65
Silicon Carbide
6.85
1
0.7
1
3
0.635
1
4.46
0.5
0.62
4.75
4.2 1.43
5
1.2
High Voltage
7.2
PG-VSON-4-1-FP V01
Marking Layout
12345678
Manufacturer
12345678
Type code
XX
Pin 1 Marking
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
(YWW)
AA
Date code (YWW)
A
Pin 1 Marking
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
Production lot code
Production lot code
Type code
Mold chassis
Identification code
IGBT
Marking Layout
Manufacturer
Packing
8
0.3 ±0.05
5.4
Index
Marking
Reel ø330mm = 5.000 Pieces/Reel
16
8.35
0.3
1.4
1.3
1.3
8.35
Power ICs
12
5.8
12 ±0.3
Packing
1.7
6.6
All dimensions in mm
Packages
All dimensions in mm
148
149
CanPAK™ SJ
CanPAK™ SQ
Package Outline
3.83 ±0.13
0.8 ±0.02
4.8 ±0.08
0.8 ±0.02
0.13 ±0.05
0.65 ±0.05
0.13 ±0.05
Foot Print
Marking Layout
High Voltage
0.68
0.45
0.7
0.7
1.2
0.8
5.6
0.95
1.25
0.4
Copper
Solder mask
1.2
Silicon Carbide
1.25
1.08
0.55
0.55
0.9
Solder mask
1.03
5.8
Copper
Stencil apertures
0.4
0.93
0.9
0.99
0.65
0.5
1.25
0.75
0.9
1.25
0.99
5.8
0.65
1.2
2.9
0.75
0.65
0.9
0.55
0.75
1.13
1.13
0.7
5.6
1.2
2.9
0.85
2.9
0.65
0.7
2.9
0.58
1.2
Foot Print
Low Voltage
0.65 ±0.05
0.05 ±0.05
0.4 ±0.05
0.7 ±0.02
2.8 ±0.05
0.9 ±0.02
0.25 ±0.02
0.4 ±0.05
4.8 ±0.08
0.05 ±0.05
0.5 ±0.02
2.45 ±0.1
0.6 ±0.02
1.35 ±0.1
0.6 ±0.02
2.8 ±0.05
0.9 ±0.02
2.65 ±0.05
1.35 ±0.05
3.83 ±0.13
Applications
Package Outline
Stencil apertures
0.5
Marking Layout
Gate Marking
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234
G = Green Product / RoHS compliant
H = Halogen-free + RoHS compliant
IGBT
G = Green Product / RoHS compliant
H = Halogen-free + RoHS compliant
Gate Marking
Packing
Packing
Reel ø177mm = 1.000 Pieces/Reel
Reel ø177mm = 1.000 Pieces/Reel
0.3
Gate
Marking
0.9
4.1
Power ICs
0.75
0.75
0.9
All dimensions in mm
Packages
All dimensions in mm
4.1
5.1
12
3.7
5.1
12
Gate
Marking
0.3
8
3.7
8
150
151
CanPAK™ ST
CanPAK™ MN
Package Outline
4.93 ±0.13
3.9 ±0.05
0.9 ±0.02
0.55 ±0.02
0.5 ±0.02
0.13 ±0.05
0.65 ± 0.05
0.9 ±0.02
0.13 ±0.05
Foot Print
High Voltage
0.7
3.2
1.1
3.2
0.75
1.45
0.675
2x 0.8
Copper
Solder mask
Stencil apertures
0.675
Silicon Carbide
Stencil apertures
Marking Layout
0.85
0.9
0.95
0.7
4x 0.7
0.85
4x 1.8
1.175
1.125
0.7
Solder mask
0.5
1.2
1.2
0.9
Copper
0.5
1.2
1.85
3.2
0.695
0.75
3.2
0.7
0.4
1.11
0.7
0.5
0.33
1.2
0.6
1.25
1.175
0.55
0.7
1.09
1.85
5.6
0.66
0.82
0.97
0.9
5.8
0.6
0.23
1.25
0.85
0.65
2.9
0.6
0.91
0.9
2.9
0.65
2x 1.3
Foot Print
Low Voltage
0.65 ± 0.05
6.3 ±0.05
1.4 ±0.02
0.28 ±0.02
0.05 ±0.05
0.4 ±0.05
0.8 ±0.02
1.63 ±0.1
3.23 ±0.1
4.8 ±0.08
0.05 ±0.05
0.4 ±0.05
0.6 ±0.02
2.8 ±0.05
0.6 ±0.02
0.77 ±0.02
2.63 ±0.1
3.83 ±0.13
1.33 ±0.1
Applications
Package Outline
0.95
Marking Layout
Gate Marking
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234
G = Green Product / RoHS compliant
H = Halogen-free + RoHS compliant
IGBT
G = Green Product / RoHS compliant
H = Halogen-free + RoHS compliant
Gate Marking
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234
Packing
Reel ø177mm = 1.000 Pieces/Reel
0.3
0.3
8
Gate
Marking
0.75
Gate
Marking
0.9
5.2
0.95
1.2
All dimensions in mm
Packages
All dimensions in mm
4.1
5.1
5.1
12
3.7
8
Power ICs
Reel ø177mm = 1.000 Pieces/Reel
6.6
12
Packing
152
153
CanPAK™ MX
CanPAK™ MP
0.4 ±0.02
0.65 ± 0.05
0.55 ±0.02
0.65 ± 0.05
0.82 ±0.02
0.13 ±0.05
Low Voltage
0.28 ±0.02
6.3 ±0.05
0.05 ±0.05
0.4 ±0.05
0.7 ±0.02
0.7 ±0.02
1.4 ±0.02
6.3 ±0.05
0.4 ±0.05
3.9 ±0.05
1.35 ±0.1
0.05 ±0.05
0.6 ±0.02
2.06 ±0.1
2.75 ±0.1
4.93 ±0.13
3.9 ±0.05
0.6 ±0.02
0.77 ±0.02
3.36 ±0.1
4.93 ±0.13
Applications
Package Outline
Package Outline
0.13 ±0.05
Foot Print
High Voltage
0.75
0.65
0.7
1.35
Copper
Solder mask
0.47
Silicon Carbide
0.35
Stencil apertures
0.75
1.88
1.45
0.75
0.7
0.87
7.1
0.65
0.65
1.73
0.9
0.87
Solder mask
1.8
1.08
0.75
0.9
7.3
Copper
4.2
0.6
1.8
0.55
0.76
0.73
0.23
0.5
0.33
1.9
0.5
0.7
1.75
0.9
0.6
0.6
4.2
0.5
1.85
0.75
1.78
7.1
0.66
0.55
0.83
7.3
1.85
1.8
0.7
0.65
0.9
4.15
0.55
1.8
1.63
4.2
0.5
1.85
0.65
1.85
0.93
Foot Print
Stencil apertures
Marking Layout
Marking Layout
Gate Marking
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234
G = Green Product / RoHS compliant
H = Halogen-free + RoHS compliant
IGBT
G = Green Product / RoHS compliant
H = Halogen-free + RoHS compliant
Gate Marking
Packing
Gate
Marking
0.95
1.2
5.2
0.95
1.2
All dimensions in mm
Packages
All dimensions in mm
5.2
0.3
8
6.6
12
5.1
Gate
Marking
Reel ø177mm = 1.000 Pieces/Reel
Power ICs
0.3
8
5.1
Reel ø177mm = 1.000 Pieces/Reel
6.6
12
Packing
154
155
CanPAK™ MZ
TDSON-10
Package Outline
Applications
Package Outline
0.42
2
0.23
0.5
Low Voltage
0.65 ±
PG-TDSON-10-2-PO V01
0.13 ±0.05
0.25
Copper
Solder mask
Stencil apertures
Wettable surface
0.6
High Voltage
0.7
1.65
0.5
0.6
0.5
2.5
2x 0.9
0.9
3.2
0.325
0.475
2.9
1.45
0.7
0.65
3.2
1.2
0.75
0.9
0.475
3.5
2.8
1.6
1
1.2
0.475
2x 0.6
3.5
0.25
0.65
4x 1.8
1.175
Stencil apertures
Silicon Carbide
1.2
1.2
3.2
0.7
0.35
1.6
4x 0.7
1.85
3.2
0.325
0.475
0.7
Index Marking
Foot Print
0.75
1.85
0.2
0.5
3 ±0.1
6.3 ±0.05
0.4 ±0.05
0.30 ±0.02
1.175
4 x 0.5 = 2
1.6 ±0.1
0.7 ±0.02
0.05 MAX.
Index Marking
2.3
0.35 ±0.1
0.05 ±0.05
0.65 ±0.02
Foot Print
0.9 ±0.05
3 ±0.1
3.9 ±0.05
0.7 ±0.02
0.95 ±0.02
3.0 ±0.1
4.93 ±0.13
PG-TDSON-10-2-FP V01
0.7
Marking Layout
Marking Layout
Gate Marking
Pin 1 marking
1234
XXXX
Type code
Lot code
IGBT
G = Green Product / RoHS compliant
H = Halogen-free + RoHS compliant
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234
Packing
Packing
0.3
Gate
Marking
Drawing available on request
0.95
1.2
All dimensions in mm
Packages
All dimensions in mm
5.2
Reel ø330mm = 5.000 Pieces/Reel
6.6
12
5.1
8
Power ICs
Reel ø177mm = 1.000 Pieces/Reel
156
157
DIP-7
DIP-8
7
0.46 ±0.1
0.35 8x
8.9 ±1
5
8
4
1
9.52 ±0.25 1)
4.37 MAX.
0.38 MIN.
2.54
0.25 +0.1
6.35 ±0.25 1)
7.87 ±0.38
0.25 +0.1
6.35 ±0.25 1)
Low Voltage
0.35 7x
1.7 MAX.
3.25 MIN.
2.54
0.46 ±0.1
7.87 ±0.38
3.25 MIN.
0.38 MIN.
1.7 MAX.
Applications
Package Outline
4.37 MAX.
Package Outline
8.9 ±1
5
1
4
9.52 ±0.25 1)
Index Marking
1) Does not include plastic or metal protrusion of 0.25 max. per side
1) Does not include plastic or metal protrusion of 0.25 max. per side
Marking Layout
High Voltage
Index Marking
Marking Layout
Date code (YYWW)
Manufacturer
LMC
XXXXXXXXXXX
12345678901
Type code
Manufacturer
e
LMC
XXXXXXXXXXX
Lot code
G = Green Product / RoHS compliant
H = Halogen-free + RoHS compliant
Mold compound code
Lot code
Pieces/Tube: 20
Pieces/Tube: 20
12.2 ±0.5
Packing
IGBT
G = Green Product / RoHS compliant
H = RoHS compliant + halogen-free
Packing
9 ±0.5
Type code
9 ±0.5
15 ±0.3
Power ICs
15 ±0.3
12.2 ±0.5
12345678901
Silicon Carbide
Date code (YYWW)
All dimensions in mm
Packages
All dimensions in mm
158
159
DIP-14
DIP-20
Package Outline
14
1
1.5 MAX.
0.5 +0.1
2.54
1
Applications
0.25 +0.1
9.9 MAX.
0.25 20x
11
20
7
0.87
4.2 MAX.
0.51 MIN.
8.9 ±1
8
19.05 ±0.25 1)
7.62 ±0.1
7.3 ±0.1
Low Voltage
0.35 14x
6.35 ±0.25 1)
0.25 +0.1
3.175 MIN.
1.7 MAX.
2.54
0.46 ±0.1
7.87 ±0.38
3.35 ±0.15
0.38 MIN.
4.37 MAX.
Package Outline
24.6 ±0.1
10 0.1 MAX.
Index Marking
Marking Layout
Pieces/Tube: 20
Pieces/Tube: 20
9 ±0.5
9 ±0.5
15 ±0.3
Silicon Carbide
Date code (YYWW)
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
Lot number
IGBT
Packing
12.2 ±0.5
Packing
123456789012345678
MC XXXXXXXXXXX
12.2 ±0.5
L
Date code (YYWW)
H = RoHS compliant + halogen-free
G = Green Product / RoHS compliant
Lot number
1234567890 MC
XXXXXXXXXXX
Manufacturer
Type code
Mold compound code
L
Marking Layout
Mold compound code
Manufacturer
Type code
High Voltage
Index Marking
1) Does not include plastic or metal protrusion of 0.25 max. per side
Power ICs
15 ±0.3
All dimensions in mm
Packages
All dimensions in mm
160
161
TSSOP-48
DSO-36
11 ±0.15 1)
6.3
5˚ ±3˚
0.25
2.8
Heatslug
0.1 C 36x
0.95 ±0.15
+0.13
0.25
M
ABC
14.2 ±0.3
17 x 0.65 = 11.05
0.25 B
36
19
5.9 ±0.1
Bottom View
19
3.2 ±0.1
36
B
+0.07
-0.02
3.5 MAX.
2)
15.74 ±0.1
(Heatslug)
0.25
25
3.25 ±0.1
0 +0.1
8° MAX.
0.65
8.1(BSC)
0.2 48x
48
-0.04
0.6 +0.15
-0.1
0.1
2)
0.2 +0.07
-0.03
1.1 ±0.1
1.3
0.5
±0.1
0.13 +0.03
+0.05
-0.2
1.0
1.10 MAX.
0.15 -0.1
6.1
Applications
Package Outline
Package Outline
1 x 45˚
1
18
18
15.9 ±0.1 1)
1
Index Marking
12.5 ±0.1
Heatslug
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Stand off
Does not include plastic or metal protrusion of 0.15 max. per side
2)
Does not include dambar protrusion of 0.05 max. per side
1)
1
A
24
1)
13.7 -0.2
Low Voltage
Index Marking
PG-DSO-36-10, -12, -15, -16, -21, -23, -26, -27 V01
Foot Print
High Voltage
0.45
1.83
Foot Print
0.29
13.48
1.3
0.65
7.1
Silicon Carbide
17 x 0.65 = 11.05
HLG09551
Pin 1 Marking
123456789012
123456789012
XXXXXXXXXXX
Infineon
Manufacturer
1234567890
G = Green Product / RoHS compliant
H = RoHS compliant + halogen free
G = Green Product / RoHS compliant
H = RoHS compliant + halogen free
XXXXX
Manufacturer
Type code
Pin 1 Marking
Type code
Lot number
IGBT
Lot number
XXXXXX
Marking Layout
Marking Layout
Packing
0.3
20
Power ICs
16.4
Drawing available on request
7 ±0.1
Pin 1
24 ±0.3
Packing
18 ±0.1
3.4
14.7
4
CPSG5808
All dimensions in mm
Packages
All dimensions in mm
162
163
DSO-28
Package Outline
Foot Print
Foot Print
High Voltage
Low Voltage
Package Outline
Applications
TSSOP-28
L
B
B
e
e
L
A
A
HLG05506
Marking Layout
Silicon Carbide
HLG05506
Marking Layout
Type code
Pin 1 Marking
Infineon
123456789001234
123456789001234
Manufacturer
123456789
123456789012
123456789012
Type code
Pin 1 Marking
G = Green Product / RoHS compliant
H = RoHS compliant/ halogen free
XXXXXXXXXXX
XXXXXXXXXXX
Lot number
G = Green Product / RoHS compliant
H = RoHS compliant + halogen free
IGBT
Manufacturer
Production lot code
Packing
18.3
6.5 -0.2
15.4
1.2
1.6
2.6
10.9
CPSG5872
3
All dimensions in mm
Packages
All dimensions in mm
Power ICs
6.8
16 ±0.3
10.2
Pin 1
0.3
12
0.3
8
24 ±0.3
Packing
164
165
Packaging Information
VQFN-68
(DIN IEC 60 286-3)
Please consult your nearest Infineon sales offices (www.infineon.com/sales) if you have any queries
relating to additional dimensions, dimensional tolerances or variations.
0.9 MAX.
A
C
M
8.1±0.1
Index Marking
8.1±0.1
Tape and Reel made of Plastic
ø Reel 180mm and 330mm
Carrier tape width: 8, 12mm
Removable transparency foil
Low Voltage
Index Marking
68x
0.1
SEATING PLANE
9.75
A B C
68x
0.05
ø330
12
11
10
(0.2)
Direction of unreeling
0.05 MAX.
STANDOFF
9
8
7
6
5
Foot Print
4
ø180
3
Upper side
Sd
10
4.3±0.1
0.6 +0.15
-0.1
3.55 ±0.1
9.75
B
(0.65)
0.5
10
Applications
Tape and Reel
Package Outline
2
1
Removable transparency foil
High Voltage
93
07
Sd
Drawing available on request
Infi
neo
8
Optional:
additional customer label
n
Infi
neo
n
Silicon Carbide
Barcode label
(readable in this position and removable)
Marking Layout
Manufacturer
12345678901
12345678901
12345678901
XXXXXXXXXXX
Fixing on the Tape
Type code
Carrier tape width: ≤ 12mm
Lot code
30 ±10
G = Green Product / RoHS compliant
H = RoHS compliant / halogen free
IGBT
Pin 1 marking
Packing
on
Power ICs
Index Marking
24
10.35
13 ±0.2
16
10.35
1.05
Packages
All dimensions in mm
166
167
1.5 +0.1
(DIN IEC60 286-4)
Please consult your nearest Infineon sales offices (www.infineon.com/sales) if you have any queries
relating to additional dimensions, dimensional tolerances or variations.
4 ±0.1
Trailer (empty)
Leader (empty)
(1 x Circumference / Hub)
min. 160mm
(1 x Circumference / Reel)
min. 400mm
Tube and Packing
Standard Length: 528-2mm;
coated (unless stated to the contrary)
Low Voltage
Direction of unreeling
Applications
Tube (DIN IEC60 286-4)
Direction of Unreeling
There shall be a leader of 400mm minimum of cover tape, which includes at least 100mm of carrier tape with empty
High Voltage
compartments. All the leader may consist of the carrier tape with empty compartments, sealed by cover tape.
Labels and Boxes
Silicon Carbide
For 1 Tape (resembling a pizza box)
S
d
ine
on
O
V RIG
E
PA R IN
C PA AL
K C
IN K
G T
Inf
Up to 10 Tapes
pro
x.
56
5
Infineon packing label
IGBT
Ap
x.
pro
Ap m a x .
85
App
S
d
ine
130
on
O
V RIG
E
PA R IN
C PA AL
K C
IN K
G T
Inf
rox.
Infi
ne
on
Infi
ne
on
Power ICs
Infineon packing label
Packages
Barcode label
168
169
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Our global connection service goes way beyond standard operating and
switchboard services by offering qualified support on the phone. Call us!
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Infineon Technologies – innovative semiconductor solutions for Energy Efficiency, mobility and security.
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2012 Infineon Technologies AG.
All Rights Reserved.
Visit us:
www.infineon.com
Order Number: B152-H9571-G2-X-7600
Date: 05 / 2012
ATTENTION PLEASE!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property
rights of any third party.
INFORMATION
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
WARNINGS
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office. Infineon Technologies Components may only be
used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause
the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons
may be endangered.