UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 5.0Ω @ VGS = 10V * Ultra Low gate charge (typical 45nC) * Low reverse transfer capacitance (CRSS = typical 9 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-370.L 2N65 ORDERING INFORMATION Note: Power MOSFET Ordering Number Lead Free Halogen Free 2N65L-TA3-T 2N65G-TA3-T 2N65L-TF1-T 2N65G-TF1-T 2N65L-TF2-T 2N65G-TF2-T 2N65L-TF3-T 2N65G-TF3-T 2N65L-TF3T-T 2N65G-TF3T-T 2N65L-TM3-T 2N65G-TM3-T 2N65L-TMA-T 2N65G-TMA-T 2N65L-TMS-T 2N65G-TMS-T 2N65L-TN3-R 2N65G-TN3-R 2N65L-TN3-T 2N65G-TN3-T 2N65L-T2Q-T 2N65G-T2Q-T 2N65L-T60-K 2N65G-T60-K 2N65L-T6C-K 2N65G-T6C-K Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-220F3 TO-251 TO-251L TO-251S TO-252 TO-252 TO-262 TO-126 TO-126C Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tube Tube Bulk Bulk MARKING INFORMATION PACKAGE TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 MARKING TO-251 TO-251L TO-251S TO-252 TO-262 TO-126 TO-126C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-370.L 2N65 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A 2.0 A Continuous ID Drain Current Pulsed (Note 2) IDM 8.0 A 140 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262 40 W TO-220F/TO-220F1 21 W TO-220F3 Power Dissipation TO-220F2 PD 23 W TO-251/TO-251L 28 W TO-252/TO-251S TO-126/TO-126C 12.5 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=64mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/ TO-262 TO-220F/TO-220F1 TO-220F2/TO-220F3 Junction to Ambient TO-251/TO-251L TO-252/TO-251S TO-126/TO-126C TO-220/ TO-262 TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251/TO-251L TO-251S/TO-252 TO-126/TO-126C SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS UNIT 62.5 °С/W 110 °С/W 132 3.13 °С/W °С/W 5.95 °С/W 5.43 °С/W 4.53 °С/W 10 °С/W θJA θJC 3 of 7 QW-R502-370.L 2N65 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0V, ID = 250μA 650 V VDS = 650V, VGS = 0V 10 μA 100 nA Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.4 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 3.9 5.0 Ω DYNAMIC CHARACTERISTICS 320 370 pF Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS 40 50 pF f =1MHz Reverse Transfer Capacitance CRSS 9 12 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) 35 50 ns Turn-On Rise Time tR 40 60 ns VDD =325V, ID =2.4A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 130 160 ns Turn-Off Fall Time tF 40 60 ns Total Gate Charge QG 45 55 nC VDS=520V, VGS=10V, Gate-Source Charge QGS 4 nC ID=2.4A (Note 1, 2) Gate-Drain Charge QGD 8.4 nC DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V Continuous Drain-Source Current ISD 2.0 A Pulsed Drain-Source Current ISM 8.0 A 180 ns Reverse Recovery Time trr VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs (Note1) Reverse Recovery Charge QRR 0.72 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-370.L 2N65 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-370.L 2N65 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-370.L 2N65 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) 200 150 100 200 150 100 50 50 0 0 0 0.6 1.8 2.4 3.0 3.6 1.2 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Drain Current, ID (A) 0 150 450 600 750 300 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-370.L