Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N65L
Power MOSFET
2A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 2N65L is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is
usually used in the high speed switching applications of power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.

FEATURES
* RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL
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Copyright © 2015 Unisonic Technologies Co., Ltd
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2N65L

Power MOSFET
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2N65LL-TA3-T
2N65LG-TA3-T
TO-220
2N65LL-TF1-T
2N65LG-TF1-T
TO-220F1
2N65LL-TF3-T
2N65LG-TF3-T
TO-220F
2N65LL-TM3-T
2N65LG-TM3-T
TO-251
2N65LL-TMA-T
2N65LG-TMA-T
TO-251L
2N65LL-TN3-R
2N65LG-TN3-R
TO-252
2N65LL-TND-R
2N65LG-TND-R
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source
2N65LL-TA3-T
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
(1) T: Tube, R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Green Package

Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
(2) TA3: TO-220, TF1: TO-220F1, TF3: TO-220F
TM3: TO-251, TMA:TO-251L, TN3: TO-252,
TND: TO-252D, T2Q: TO-262
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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2N65L

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
2.0
A
Continuous
ID
2.0
A
Drain Current
8.0
A
Pulsed (Note 2)
IDM
Single Pulsed (Note 3)
EAS
140
mJ
Avalanche Energy
4.5
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
54
W
TO-220F/TO-220F1
23
W
PD
Power Dissipation
TO-251/TO-251L/TO-252
44
W
TO-252D
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220/TO-220F/TO-220F1
TO-251/TO-251L/TO-252
TO-252D
TO-220
TO-220F/TO-220F1
TO-251/TO-251L/TO-252
TO-252D
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJc
RATINGS
62.5
UNIT
°С/W
100
°С/W
2.32
5.5
°С/W
°С/W
2.87
°С/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 650V, VGS = 0V
Forward
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25V, VGS =0V,
Output Capacitance
COSS
f =1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
VDD =325V, ID =2.4A,
Turn-On Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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VDS=520V, VGS=10V,
ID=2.4A (Note 1, 2)
MIN TYP MAX UNIT
650
0.4
V
10
μA
100 nA
-100 nA
V/°С
3.9
4.0
5.0
V
Ω
270
40
5
350
50
7
pF
pF
pF
10
25
20
25
9.0
1.6
4.3
30
60
50
60
11
ns
ns
ns
ns
nC
nC
nC
1.4
2.0
8.0
V
A
A
ns
μC
2.0
VGS = 0 V, ISD = 2.0 A
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/μs (Note1)
180
0.72
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
Drain Current, ID (µA)

1.4
3.5
1.2
3.0
1.0
Continuous Drain-Source
Current, ISD (A)
Drain Current, ID (A)
Drain-Source On-State Resistance
Characteristics
VGS=10V, ID=1.0A
0.8
0.6
0.4
0.2
Continuous Drain-Source Current vs.
Source to Drain Voltage
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
Drain to Source Voltage, VDS (V)
5
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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