UNISONIC TECHNOLOGIES CO., LTD
25N40
Preliminary
Power MOSFET
400V, 26A N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 25N40 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 25N40 is generally applied in high efficiency switch
mode power supplies.
FEATURES
* RDS(ON)=0.16Ω @ VGS=10V,ID=13A
* Low Gate Charge (Typical 48nC)
* Low CRSS (Typical 30pF)
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
25N40L-T47-T
25N40G-T47-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-247
1
G
Pin Assignment
2
3
D
S
Packing
Tube
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25N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) (Note 5)
PARAMETER
Drain to Source Voltage
Gate-Source Voltage
RATINGS
UNIT
400
V
±30
V
TC=25°C
26
A
ID
Continuous
Drain Current (Note 5)
TC=100°C
15.6
A
Pulsed (Note 2)
IDM
104
A
Avalanche Current (Note 2)
IAR
26
A
Single Pulsed (Note 3)
EAS
1352
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
26.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TC=25°C)
297
W
PD
Derate above 25°C
2.4
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; Pulse width limited by maximum junction temperature.
3. L=4mH, IAS=26A. VDD=50V, RG=25Ω, Starting TJ=25°C
4. ISD≤26A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature
SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
40
0.42
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V, TJ=150°C
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V,
Forward
VGS=+30V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=13A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=320V, VGS=10V, ID=26A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=200V, ID=26A, RG=25Ω
Rise Time
tR
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=26A, VGS=0V
Body Diode Reverse Recovery Time
trr
ISD=26A, VGS=0V,
dIF/dt=100A/µs (Note 1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2%.
2. Essentially Independent of Operating Temperature Typical Characteristics
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
400
0.5
2.0
V
V/°C
1
µA
+100 nA
-100 nA
4.0
0.11 0.16
V
Ω
2400 3185
390 520
30
45
pF
pF
pF
48
15
20
45
100
115
66
nC
nC
nC
ns
ns
ns
ns
60
100
210
240
140
26
104
1.4
406
5.17
A
A
V
ns
µC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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25N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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