SUD70N02-03P N-Channel 20 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0033 @ VGS = 10 V 39 0.0053 @ VGS = 4.5 V 31 APPLICATIONS VDS (V) 20 Drain Connected to Tab D D Synchronous Buck Converter - Low-Side - Secondary Synchronous Rectifier D TO-252 G TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High-Efficiency 100% Rg Tested D D D D G S Top View S Ordering Information: SUD70N02-03P N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 TA = 25_C Continuous Drain Currenta TC= 25_C Pulsed Drain Current 70b Maximum Power Dissipation TC = 25_C Operating Junction and Storage Temperature Range A 100 IS TA = 25_C V 39a ID IDM Continuous Source Current (Diode Conduction)a Unit 37 8.3a PD W 100 TJ, Tstg - 55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 1.2 1.5 Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package 1/5 www.freescale.net.cn Unit _C/W C/W SUD70N02-03P N-Channel 20 V (D-S) 175 °C MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 3.0 A 0.0026 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) gfs 0.0033 0.0047 VGS = 4.5 V, ID = 20 A Forward Transconductanceb 0.0042 VDS = 15 V, ID = 20 A nA mA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V W 0.0053 15 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 5100 VGS = 0 V, VDS = 10 V, f = 1 MHz f = 1.0 MHz 0.5 1.1 1.8 40 60 14 VDS = 10 V, VGS = 4.5 V, ID = 50 A W nC 13 VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W td(off) Fall Timec pF p 800 tr Turn-Off Delay Timec 1650 tf 15 25 11 20 45 70 15 25 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 45 90 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 160 160 VGS = 10 thru 5 V 140 4V 140 120 I D - Drain Current (A) I D - Drain Current (A) 120 100 80 60 40 3V 20 100 80 60 TC = 125_C 40 25_C 20 - 55_C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2/5 10 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) www.freescale.net.cn 5 SUD70N02-03P N-Channel 20 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 0.006 200 160 r DS(on)- On-Resistance ( W ) g fs - Transconductance (S) TC = - 55_C 25_C 120 125_C 80 40 0 0.005 VGS = 4.5 V 0.004 0.003 VGS = 10 V 0.002 0.001 0.000 0 10 20 30 40 50 0 60 20 40 ID - Drain Current (A) V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) Ciss 5000 4000 3000 Coss Crss 1000 0 VDS = 10 V ID = 50 A 8 6 4 2 0 0 4 8 12 16 0 20 10 20 VDS - Drain-to-Source Voltage (V) 1.6 30 40 50 60 70 80 Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 20 A I S - Source Current (A) 1.8 r DS(on)- On-Resistance ( W ) (Normalized) 100 Gate Charge 10 6000 2000 80 ID - Drain Current (A) Capacitance 7000 60 1.4 1.2 1.0 TJ = 150_C TJ = 25_C 10 0.8 0.6 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (_C) 3/5 150 175 1 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) www.freescale.net.cn 1.5 SUD70N02-03P N-Channel 20 V (D-S) 175 °C MOSFET THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Limited by rDS(on) 32 10, 100 ms 100 I D - Drain Current (A) I D - Drain Current (A) Safe Operating Area 1000 40 24 16 8 1 ms 10 10 ms TA = 25_C Single Pulse 0.1 0 0 25 50 75 100 125 150 100 ms 1s 10 s 100 s dc 1 0.01 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TA - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 4/5 www.freescale.net.cn 10 SUD70N02-03P N-Channel 20 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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