UNISONIC TECHNOLOGIES CO., LTD
UTM3052-H
Preliminary
POWER MOSFET
62A, 30V N-CHANNEL FAST
SWITCHING MOSFET
DESCRIPTION
1
The UTC UTM3052-H is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with a
minimum on-state resistance and low gate charge.
The UTC UTM3052-H is suitable for load switch and networking
DC-DC power system, etc.
DFN-8(5x6)
FEATURES
* RDS(ON) < 8.0mΩ @ VGS=10V, ID=30A
* Super low gate charge
SYMBOL
ORDERING INFORMATION
Ordering Number
Note:
UTM3052G-K08-5060-R
Pin Assignment: G: Gate
D: Drain
Package
DFN-8(5×6)
S: Source
1
S
2
S
Pin Assignment
3 4 5 6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R209-060.a
UTM3052-H
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
RATINGS
UNIT
30
V
±20
V
VGS=10V, TC=25°C (Note 2, 6)
62
A
VGS=10V, TC=100°C (Note 2)
40
A
ID
Continuous
Drain Current
VGS=10V, TA=25°C (Note 2)
13.1
A
VGS=10V, TA=70°C (Note 2)
10.5
A
Pulsed (Note 3)
IDM
150
A
Avalanche Energy Single Pulse (Note 4)
EAS
69
mJ
Avalanche Current
IAS
37
A
Total Power Dissipation
TC=25°C
46.3
W
PD
(Note 5)
2
W
TA=25°C
Operating Junction Temperature Range
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper
3. The data tested by pulsed, pulse width ≤ 300 µs; duty cycle ≤ 2%
4. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=37A
5. The power dissipation is limited by 150°C junction temperature
6. Package limitation current is 85A
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
VDSS
VGSS
THERMAL RESISTANCE (Note 2)
PARAMETER
Junction to Ambient
Junction to Case
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SYMBOL
θJA
θJC
RATINGS
62
2.7
UNIT
°C/W
°C/W
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UTM3052-H
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
ON CHARACTERISTICS
Static Drain-Source On-State Resistance
(Note 2)
ID=250µA, VGS=0V
∆BVDSS/∆TJ Reference to 25°C, ID=1mA
IDSS
Forward
Reverse
TEST CONDITIONS
IGSS
RDS(ON)
MIN
TYP
30
V
0.01
VDS=24V, VGS=0V, TJ=25°C
VDS=24V, VGS=0V, TJ=55°C
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VGS=10V, ID=30A
VGS=4.5V, ID=15A
MAX UNIT
6.4
10
1.5
-3.1
41
V/°C
1
5
100
-100
µA
µA
nA
nA
8.0
12.5
2.5
mΩ
mΩ
V
mV/°C
S
Gate Threshold Voltage
VGS(TH)
1.2
VDS= VGS, ID=250µA
VGS(TH) Temperature Coefficient
∆ VGS(TH)
Forward Transconductance
gFS
VDS=5V, ID=30A
DYNAMIC PARAMETERS
Input Capacitance
CISS
600
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
120
Reverse Transfer Capacitance
CRSS
70
Gate Resistance
RG
VGS=0V, VDS=0V, f=1.0MHz
3.9
5.8
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
20
VDD=30V, ID=0.5A, RG=25Ω
Rise Time
tR
48
VGS=10V
Turn-OFF Delay Time
tD(OFF)
165
Fall Time
tF
170
Total Gate Charge
QG
60
ID=1A, VDS=30V, VGS=10V
Gate to Source Charge
QGS
1.0
IG=100µA
5.5
Gate to Drain ("Miller") Charge
QGD
GUARANTEED AVALANCHE CHARACTERISTICS
Single Pulse Avalanche Energy (Note 3)
EAS
VDD=25V, L=0.1mH, IAS=30A
45
DIODE CHARACTERISTICS
Continuous Source Current (Note 1, 4)
IS
62
VG=VD=0V, Force Current
150
Pulsed Source Current (Note 2, 4)
ISM
Diode Forward Voltage (Note 2)
VSD
TJ=25°C, IS=1A, VGS=0V
1
Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper
2. The data tested by pulsed, pulse width ≤ 300µs; duty cycle ≤ 2%
3. The Min. value is 100% EAS tested guarantee
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total
dissipation
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
pF
pF
Pf
Ω
ns
ns
ns
ns
nC
nC
nC
mJ
A
A
V
power
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UTM3052-H
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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