UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT200N03 is a N-channel MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT200N03 is generally applied in DC to DC convertor or synchronous rectification FEATURES * Fast Switching * 100% Avalanche Tested * High Power and Current Handling Capability * RoHS Compliant SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT200N03L-TA3-T UTT200N03G-TA3-T UTT200N03L-TQ2-T UTT200N03G-TQ2-T UTT200N03L-TQ2-R UTT200N03G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-263 TO-263 1 G G G Pin Assignment 2 D D D 3 S S S Packing Tube Tube Tape Reel MARKING INFORMATION PACKAGE MARKING TO-220 TO-263 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-758.C UTT200N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS [TC=25°C, unless otherwise noted (Note 6)] PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous ID 200 A Drain Current Pulsed (Note 1) IDM 800 A Single Pulsed Avalanche Energy (Note 2) EAS 864 mJ 178 W Power Dissipation TC=25°C PD Power Dissipation Derate above 25°C 1.43 W/°C Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 0.7 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V, TC=25°C Drain-Source Leakage Current IDSS VDS=30V, VGS=0V Forward VGS=+20V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=80A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=25V, ID=100A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, RGEN=4.7Ω, VGS=10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=100A, VGS=0V Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature Note: 2. L = 3mH, IAS = 24A, VDD = 30V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 4. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 30 1.0 10 +100 -100 V µA nA nA 3.0 2.6 V mΩ 5490 7300 1220 1620 155 233 pF pF pF 200 11 40 70 200 1600 700 110 300 2000 1200 nC nC nC ns ns ns ns 200 800 1.3 A A V 350 2 of 5 QW-R502-758.C UTT200N03 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-758.C UTT200N03 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Gate Charge Test Circuit Gate Charge Waveforms VGS RL QG 10V VDS VGS QGS QGD DUT 1mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 4 of 5 QW-R502-758.C UTT200N03 Drain Current, ID (A) Drain Current, ID (µA) Drain Current, ID (µA) TYPICAL CHARACTERISTICS Drain Current, ID (A) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-758.C