UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N08H Power MOSFET 60 Amps, 80 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT60N08H is an N-channel power MOSFET adopting UTC’s advanced planar stripe and DMOS technology to provide designers with perfectly high switching speed and minimum on-state resistance. It also can withstand high energy pulse in the avalanche and commutation modes. The UTC UTT60N08H is applied in low voltage applications such as DC motor control, automotive, and high efficiency switching for DC/DC converters. FEATURES * RDS(ON) < 20mΩ @ VGS=10V, ID=30A * High switching speed * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT60N08HL-TA3-T UTT60N08HG-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-052.b UTT60N08H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 80 V Gate to Source Voltage VGSS ±25 V Continuous ID 60 A Continuous Drain Current Pulsed IDM 176 A Avalanche Energy Single Pulsed (Note 1) EAS 80 mJ Peak Diode Recovery dv/dt (Note 2) dv/dt 6.5 V/ns Power Dissipation PD 100 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL Junction to Ambient θJA Junction to Case θJC Notes : 1. L=0.4mH, IAS=44A, VDD=25V, RG=25Ω, Starting TJ=25°C. 2. ISD ≤60A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ=25°C. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 1.25 UNIT °C/W °C/W 2 of 6 QW-R209-052.b UTT60N08H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL TEST CONDITIONS BVDSS VGS=0V, ID=250µA ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C VDS=80V, VGS=0V IDSS VDS=64V, TC=150°C VDS=0V ,VGS=+25V IGSS VDS=0V ,VGS=-25V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A Forward Transconductance gFS VDS=30V, ID=30A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A Gate-Source Charge QGS RG=100kΩ (Note 4,5) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=30V, ID=0.5A, RG=25Ω (Note 4,5) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =60A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=60A, dIF/dt=100A/μs (Note 4) Body Diode Reverse Recovery Charge QRR Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=0.4mH, IAS=20A, VDD=25V, RG=25Ω, Starting TJ=25°C 3. ISD ≤60A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 80 0.07 1 10 +100 -100 2.0 4.0 20 V V/°C µA µA nA nA 31 V mΩ S 1400 150 40 pF pF pF 120 10 12 90 50 120 35 nC nC nC ns ns ns ns 60 176 1.5 73 185 3 of 6 QW-R209-052.b A A V ns μC UTT60N08H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-052.b UTT60N08H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 5 of 6 VER.a UTT60N08H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 VER.a