UNISONIC TECHNOLOGIES CO., LTD 2N40 Preliminary Power MOSFET 2.0A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching performance. It also can withstand high energy pulse in the avalanche. The UTC 2N40 is usually used in general purpose switching applications, motor control circuits and switched mode power supply. FEATURES * High switching speed * RDS(ON) < 3.4Ω @ VGS=10V, ID=1.25A * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2N40L-TA3-T 2N40G-TA3-T 2N40L-T92-B 2N40G-T92-B 2N40L-T92-K 2N40G-T92-K Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-92 TO-92 1 G G G Pin Assignment 2 D D D 3 S S S Packing Tube Tape Box Bulk 1 of 6 QW-R502-524.c 2N40 Preliminary Power MOSFET MARKING TO-220 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TO-92 2 of 6 QW-R502-524.c 2N40 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 400 V ±30 V Continuous 2.5 A Drain Current Pulsed 10 A Avalanche Current 2.5 A Single Pulsed Avalanche Energy 100 mJ TO-220 25 W Power Dissipation PD TO-92 3 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ 150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 75mH, IAS = 1.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 1.8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C SYMBOL VDSS VGSS ID IDM IAR EAS THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-92 TO-220 TO-92 θJA θJC RATINGS 62.5 140 5 42 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=400V, VGS=0V Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.25A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG(TOT) VDS=50V, VGS=10V, ID=1.3A , Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, VGS=10V, ID=0.5A, Rise Time tR RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS TC=25°C Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=2.5A, VGS=0V Body Diode Reverse Recovery Time trr IS=2.5A, VGS=0V, dI/dt=100A/µs Body Diode Reverse Recovery Charge Qrr UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 400 2.0 1 +100 -100 V µA nA nA 4.0 3.4 V Ω 240 44 26 pF pF pF 20 2 8 10 25 46 25 nC nC nC ns ns ns ns 2.5 10 1.2 200 2.0 A A V ns µC 3 of 6 QW-R502-524.c 2N40 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 4 of 6 QW-R502-524.c 2N40 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-524.c 2N40 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-524.c