UNISONIC TECHNOLOGIES CO., LTD 3N90Z Preliminary Power MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N90Z provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=4.1Ω @VGS=10 V * Ultra Low Gate Charge ( typical 22.7 nC ) * Low Reverse Transfer Capacitance ( CRSS= Typical 13 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N90ZL-TF1-T 3N90ZG-TF1-T Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-913.a 3N90Z Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS V 900 Drain-Gate Voltage (RG=20kΩ) VDGR V 900 Gate-Source Voltage VGSS ±20 V Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30(MIN) V Insulation Withstand Voltage (DC) VISO 2500 V Avalanche Current (Note 2) IAR 3 A Continuous Drain Current ID 3 A Pulsed Drain Current IDM 10 A Single Pulse Avalanche Energy (Note 3) EAS 180 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. starting TJ=25 °C, ID=IAR, VDD=50V 4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX). THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATING 62.5 5 UNIT °C/W °C/W 2 of 6 QW-R502-913.a 3N90Z Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 900 V Drain-Source Leakage Current IDSS VDS=900V, VGS=0V 1 μA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V ±10 μA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 3 3.75 4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A 4.1 4.8 Ω DYNAMIC CHARACTERISTICS 590 pF Input Capacitance CISS Output Capacitance COSS 63 pF VDS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance CRSS 13 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 18 ns VDD=450V, ID=1.5 A, RG=4.7Ω VGS=10V Turn-On Rise Time tR 7 ns Turn-Off Delay Time tD(OFF) 45 ns VDD=720V, ID=1.5 A, RG=4.7Ω VGS=10V Turn-Off Fall Time tF 18 ns Total Gate Charge QG 22.7 nC VDD=720V, ID=3A, VGS=10V Gate-Source Charge QGS 4.2 nC Gate-Drain Charge QDD 12 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note 1) VSD ISD=3A ,VGS=0V 1.6 V Source-Drain Current ISD 3 A Source-Drain Current (Pulsed) ISDM 12 A Reverse Recovery Current IRRM 8.7 A ISD=3A, di/dt=100A/μs, Body Diode Reverse Recovery Time tRR 510 ns VDD=100V, TJ=25°C Body Diode Reverse Recovery Charge QRR 2.2 nC Notes: 1. Pulse width=300μs, Duty cycle≦1.5% 2. COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-913.a 3N90Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-913.a 3N90Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit 12V Same Type as D.U.T. 50kΩ 0.2μF Fig. 2B Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT 3mA VGS Charge Fig. 3A Gate Charge Test Circuit Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig. 3B Gate Charge Waveform Fig. 4B Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-913.a 3N90Z Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-913.a