Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UD4840-H
Power MOSFET
6A, 40V DUAL N-CHANNEL
ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR

DESCRIPTION
The UTC UD4840-H is a dual N-Channel enhancement mode
field effect transistor, it uses UTC’s advanced technology to provide
customers with a minimum on-state resistance and low gate charge,
etc.
The UTC UD4840-H is suitable for use as a load switch or in
PWM applications.

FEATURES
* RDS(ON)< 32 mΩ @ VGS=10V, ID=6A
RDS(ON)< 42 mΩ @ VGS=4.5V, ID=5A
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:
UD4840G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
Pin Assignment
1 2 3 4 5 6 7 8
S2 G2 S1 G1 D1 D1 D2 D2
Packing
Tape Reel
UD4840G-S08-R

(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) S08: SOP-8
(3)Green Package
(3) G: Halogen Free and Lead Free
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UD4840-H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TA=25°C
6
A
ID
(Note 1)
TA=70°C
5
A
Pulsed Drain Current (Note 2)
IDM
20
A
TA=25°C
2
W
PD
Power Dissipation
1.28
W
TA=70°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
t≤10s
48
62.5
°C/W
Junction to Ambient (Note 1)
θJA
Steady-State
74
110
°C/W
Junction to Lead (Note 3)
Steady-State
θJC
35
50
°C/W
Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The value in any given application depends on the user's specific board design.
The current rating is based on the t≤10s thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The θJA is the sum of the thermal impedence from junction to lead θJL and lead to ambient.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
VGS(TH)
ID(ON)
Static Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
ID=10mA, VGS=0V
VDS=32V, VGS=0V
VDS=32V, VGS=0V, TJ=55°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
40
VDS=VGS, ID=250µA
VDS=5V, VGS=10V
VGS=10V, ID=6A
VGS=10V, ID=6A, TJ=125°C
VGS=4.5V, ID=5A
VDS=5V, ID=6A
1.5
20
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=20V, ID=1A
Gate to Source Charge
QGS
IG=100µA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VGS=10V, VDS=30V, , ID=0.5A
Rise Time
tR
RG=25Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
IS
Body Diode Reverse Recovery Time
trr
IF=6A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
1
5
+100
-100
2.3
3
V
µA
µA
nA
nA
22
V
A
mΩ
mΩ
mΩ
S
400
50
25
2.7
pF
pF
pF
Ω
30
1.0
2.0
115
190
5
19
nC
nC
nC
ns
ns
ns
ns
32
48
42
0.77
20.5
14.5
1
3
V
A
ns
nC
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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