UTC 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL APPLICATION * Low frequency power amplifier 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VALUE UNIT VCBO VCEO VEBO Ic Ic(peak) Pc Tj Tstg -120 -80 -5 -1 -2 0.9 150 -55 ~ +150 V V V A A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO Emitter-Base Breakdown Voltage Collector Cut-Off Current DC Current Transfer Ratio V(BR)EBO ICBO hFE1 hFE2 VCE(sat) VBE fT Cob Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain Bandwidth Product Collector Output Capacitance Note: Pulse test UTC TEST CONDITIONS Ic= -10µA,IE =0 Ic= -1mA,RBE =∞ IE= -10µA,IC=0 VCB= -100V,IE=0 VCE= -5V, Ic= -150mA(note) VCE= -5V, Ic= -500mA(note) Ic= -500mA,IB= -50 mA(note) VCE= -5V,Ic= -150mA(note) VCE= -5V,Ic= -150mA VCB= -10V,IE=0,f=1MHz UNISONIC TECHNOLOGIES MIN -120 -80 -5 TYP MAX UNIT V V V 60 30 -10 320 µA -1 -1.5 V V MHz pF 140 20 CO. LTD 1 QW-R211-010,A UTC 2SB647 PNP EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE1 RANK RANGE B 60-120 C 100-200 D 160-320 TYPICAL PERFORMANCE CHARACTERISTICS Maximum Collector Dissipation Curve Typical Output Characteristics 1.2 -1.0 IB =0 -120 -0.8 Collector Current Ic (A) Collector Power Dissipation Pc (W) -100 0.8 0.4 -80 -60 -40 -0.6 -30 -20 -10 -5 -0.4 -2 Pc =0.9W -1 -0.2 0 50 100 150 -0.5m A 0 -2 Ambient Temperature Ta (℃) -8 -6 -10 DC Current Transfer Ratio vs.Collector Current Typical Transfer Characteristics 600 -500 VCE =-5V PULSE VCE =-5V PULSE 500 -200 DC Current Transfer Ratio hFE -100 Collector Current Ic (mA) -4 Collector to Emitter Voltage VCE (V) Ta=75 ℃ -50 Ta=25 ℃ -20 -10 -5 Ta= -25 ℃ 400 Ta=75 ℃ 300 Ta=25 ℃ 200 100 Ta=-25 ℃ -2 0 -1 0 -0.2 -0.4 -0.6 Base to Emitter Voltage VBE (V) UTC -0.8 -1.0 -1 -3 -10 -30 -100 -300 -1000 Collector Current Ic (mA) UNISONIC TECHNOLOGIES CO. LTD 2 QW-R211-010,A UTC 2SB647 PNP EPITAXIAL SILICON TRANSISTOR Saturation Voltage vs.Collector Current -1.2 Ic =10 IB PULSE -0.5 -0.4 -0.3 -0.2 -0.1 Base to emitter saturation voltage VBE (sat) (V) Collector to emitter saturation voltage VCE (sat) (V) -0.6 -1.0 Ta=-25 ℃ -0.8 VBE(sat) -0.6 Ta=25 ℃ Ta=75 ℃ -0.4 Ta=75 ℃ -0.2 VCE(sat) 0 0 Ta=25 ℃ -1 -3 -10 -30 Ta=-25 ℃ -100 -300 -1000 Collector Current Ic (mA) Gain Bandwidth Product vs.Colllector Current Collector Output Capacitance vs.Collector to Base Voltage 200 240 VCE =-5V 100 Collector Output Capacitance Cob (pF) Gain Bandwidth Product fT (MHz) 200 160 120 80 40 0 -10 f= 1 MHz IE =0 50 20 10 5 2 -30 -100 Collector Current Ic (mA) -300 -1000 -1 -2 -5 -10 -50 -20 -100 Collector to Base Voltage VCB (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R211-010,A