UNISONIC TECHNOLOGIES CO., LTD 22NP04 Preliminary Power MOSFET N AND P-CHANNEL ENHANCEMENT MODE FIELD DFFECT TRANSISTOR DESCRIPTION 1 The UTC 22NP04 is an N and P-channel enhancement mode field dffect transistor, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low gate charge. TO-252-4 FEATURES * N-channel: 24A, 40V, RDS(on)<33 mΩ @ VGS=7.0V, ID=7A 24A, 40V, RDS(on)<30 mΩ @ VGS=10V, ID=10A * P-channel: -19A, -40V, RDS(on)<40 mΩ @ VGS=7.0V, ID=-5A -19A, -40V, RDS(on)<35 mΩ @ VGS=-10V, ID=-7A * High switching speed * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 22NP04L-TN4-R 22NP04G-TN4-R TO-252-4 Note: Pin Assignment: G: Gate D: Drain S: Source 1 S1 Pin Assignment 2 3 4 G1 D S2 5 G2 Packing Tape Reel 22NP04L-TN4-T (1)Packing Type (1) R: Tape Reel (2)Package Type (2) TN4: TO-252-4 (3)Green Package (3) L: Lead Free, G: Halogen Free and Lead Free www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R211-024.a 22NP04 Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw QW-R211-024.a 22NP04 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RATINGS UNIT N-channel P-channe Drain-Source Voltage VDSS 40 -40 V Gate-Source Voltage VGSS ±20 ±20 V TC=25°C 24 -19 A ID Continuous Drain Current TC=70 19 -15 A Pulsed (Note 1) IDM 60 -60 A TC=25°C 20.8 W Power Dissipation PD TC=70 13.3 W Junction Temperature TJ -55~150 °C Storage Temperature TSTG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. PARAMETER SYMBOL THERMAL CHARACTERISTICS PARAMETER SYMBOL Junction to Case θJC Junction to Ambient θJA Note: Pulse width limited by maximum junction temperature. UNISONIC TECHNOLOGIES CO., LTD RATINGS 6 42 UNIT °C/W °C/W 3 of 7 www.unisonic.com.tw QW-R211-024.a 22NP04 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) N-channel PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS ID=250uA, VGS=0V VDS=32V, VGS=0V VDS=30V, VGS=0V, TJ=55°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V 40 VDS=VGS, ID=250uA VGS=7.0V, ID=7A VGS=10V, ID=10A VDS=10V, ID=10A VGS=10V, VDS=5V 1.6 IDSS Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 1) Forward Transconductance (Note 1) On-State Drain Current (Note 1) DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge (Note 2) Gate to Source Charge Note 2) Gate to Drain Charge Note 2) Turn-ON Delay Time (Note 2) Rise Time (Note 2) Turn-OFF Delay Time (Note 2) Fall-Time (Note 2) SOURCE TO DRAIN DIODE SPECIFICATIONS Drain-Source Diode Forward Voltage (Note 1) Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IGSS VGS(TH) RDS(ON) gFS ID(ON) CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF VSD tRR QRR UNISONIC TECHNOLOGIES CO., LTD VGS=0V, VDS=25V, f=1.0MHz VGS=10V, VDS=30V(BR)DSS, ID=1A, IG=100uA VDS=30V, VGS=10V, ID=0.5A, RG=25Ω IF=10A, VGS=0V IF=10A, dIF/dt=100A/µs MIN TYP MAX UNIT 1 10 +100 -100 2.0 3.0 33 30 25 60 V µA µA nA nA V mΩ mΩ S A 765 90 75 pF pF pF 80 5 7.5 44 65 330 155 nC nC nC ns ns ns ns 1.2 60 43 ns nC 4 of 7 www.unisonic.com.tw QW-R211-024.a 22NP04 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) P-channel PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 1) IGSS VGS(TH) RDS(ON) Forward Transconductance (Note 1) gFS On-State Drain Current (Note 1) ID(ON) DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG Gate to Source Charge Note 2) QGS Gate to Drain Charge Note 2) QGD Turn-ON Delay Time (Note 2) tD(ON) Rise Time (Note 2) tR Turn-OFF Delay Time (Note 2) tD(OFF) Fall-Time (Note 2) tF SOURCE TO DRAIN DIODE SPECIFICATIONS Drain-Source Diode Forward Voltage (Note 1) VSD Body Diode Reverse Recovery Time tRR Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 2. Independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD TEST CONDITIONS MIN TYP MAX UNIT ID=-250uA, VGS=0V -40 VDS=-32V, VGS=0V VDS=-30V, VGS=0V, TJ=55°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V VDS=VGS, ID=-250uA VGS=-7.0V, ID=-5A VGS=-10V, ID=-7A VDS=-10V, ID=-7A VGS=-10V, VDS=-5V VGS=0V, VDS=-25V, f=1.0MHz VGS=-10V, VDS=-30V(BR)DSS, ID=-1A, IG=-100uA VDS=-30V, VGS=-10V, ID=-0.5A, RG=25Ω IF=-7A, VGS=0V IF=-7A, dIF/dt=100A/µs -1 -10 +100 -100 -1.6 -2.0 -3.0 40 35 18 -60 V µA µA nA nA V mΩ mΩ S A 930 155 130 pF pF pF 20 3.2 2.7 60 92 800 400 nC nC nC ns ns ns ns -1.2 80 75 ns nC 5 of 7 www.unisonic.com.tw QW-R211-024.a 22NP04 Preliminary UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 6 of 7 www.unisonic.com.tw QW-R211-024.a 22NP04 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R211-024.a