Product Brief OptiMOS™ 200V and 250V

Product Brief
OptiMOS™ 200V and 250V
Industry’s Leading High Performance Products
With OptiMOS™ 200V and 250V Infineon continues to deliver Best-in-Class on-state
resistance (RDS(on) ) power MOSFETs with unique performance. The leading RDS(on) and
Figure of Merit (FOM) characteristics reduce power losses, improve overall efficiency
and increase power density. The 200V and 250V product families are optimized for
applications such as Lighting for 110V AC networks, HID lamps, DC-DC converters and
Power over Ethernet (PoE).
OptiMOS™ 200V and 250V feature up to 53% lower RDS(on) than alternative devices 10.7mΩ in 200V and 20mΩ in 250V - and up to 68% lower FOM, which translates into
the lowest power losses and excellent switching behavior.
RDS(on) max. @VGS=10V [mΩ]
40
FOM (RDS(on) max. * Qg typ.) @VGS=10V [mΩ*µC]
OptiMOS™ 200V and 250V, Benchmark in RDS(on) and FOM
Infineon
Next best competitor
-53%
20
-51%
0
200
Voltage Class [V]
www.infineon.com/optimos
250
Features
„„ Industry’s
lowest RDS(on)
Qg and Qgd
„„ World’s lowest FOM
„„ RoHS compliant − halogen free
„„ Lowest
Benefits
„„ Highest efficiency
„„ Highest power density
„„ Lowest board space consumption
„„ Less paralleling required
„„ System cost improvement
„„ Easy-to-design products
„„ Environmentally friendly
Applications
Infineon
Next best competitor
„„ Lighting
for 110V AC networks
„„ Power over Ethernet (PoE)
„„ DC-DC for Telecom and
Industrial application
„„ HID lamps
-61%
-68%
PoE
200
Voltage Class [V]
250
Product Brief
OptiMOS™ 200V and 250V
Industry’s Leading High Performance Products
The outstanding characteristics of OptiMOS™ 200V and 250V products enable the use of a slim SuperSO8 (5x6x1 mm3) package
for applications that previously required devices in a larger D²PAK (9x10x4.5 mm3). Using SuperSO8 instead of D²PAK reduces the
space requirements by more than 90% and enables higher power density systems. Leadless packages such as SuperSO8 provide
optimized switching behavior and high efficiency levels.
Furthermore, the OptiMOS™ 200V and 250V family allows system cost improvement through reduced device paralleling,
smaller heat sinks can be used as a result of the low RDS(on) and due to optimized switching behavior the design process
is simplified.
OptiMOS™ 200V and 250V Product Portfolio
Voltage Class
DPAK
I2PAK
D2PAK
TO-220
SuperSO8
S3O8
Bare Die
(RDS(on) typ.)
200V
IPD320N20N3 G
RDS(on)=32mΩ
IPI110N20N3 G RDS(on)=11mΩ
IPB107N20N3 G
RDS(on)=10.7mΩ
IPP110N20N3 G
RDS(on)=11mΩ
BSC320N20NS3 G
RDS(on)=32mΩ
BSZ900N20NS3 G
RDS(on)=90mΩ
IPC302N20N3
10mΩ<RDS(on)<20mΩ
IPI320N20N3 G RDS(on)=32mΩ
IPB107N20NA*
RDS(on)=11mΩ
IPP110N20NA*
RDS(on)=11mΩ
BSC500N20NS3 G
RDS(on)=50mΩ
BSZ12DN20NS3 G
RDS(on)=125mΩ
IPB320N20N3 G
RDS(on)=32mΩ
IPP320N20N3 G
RDS(on)=32mΩ
BSC900N20NS3 G
RDS(on)=90mΩ
BSZ22DN20NS3 G
RDS(on)=225mΩ
BSC12DN20NS3 G
RDS(on)=125mΩ
BSC22DN20NS3 G
RDS(on)=225mΩ
250V
IPD600N25N3 G
RDS(on)=60mΩ
IPI200N25N3 G RDS(on)=20mΩ
IPB200N25N3 G
RDS(on)=20mΩ
IPP200N25N3 G
RDS(on)=20mΩ
BSC600N25NS3 G
RDS(on)=60mΩ
BSZ16DN25NS3 G
RDS(on)=165mΩ
IPC302N25N3
10mΩ<RDS(on)<20mΩ
IPI600N25N3 G RDS(on)=60mΩ
IPB600N25N3 G
RDS(on)=60mΩ
IPP600N25N3 G
RDS(on)=60mΩ
BSC16DN25NS3 G
RDS(on)=165mΩ
BSZ42DN25NS3 G
RDS(on)=425mΩ
IPC302N25N3A*
10mΩ<RDS(on)<20mΩ
* Part qualified for Automotive
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2013 Infineon Technologies AG.
All Rights Reserved.
Visit us:
www.infineon.com
Order Number: B152-H9392-G4-X-7600-DB2013-0011
Date: 09 / 2013
Attention please!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property
rights of any third party.
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