AO6603 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS (V) = 20V ID = 1.7 (VGS = 4.5V) -2.5A RDS(ON) < 225mΩ (VGS = 4.5V) < 135mΩ (VGS = -10V) The AO6603 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications). AO6603L is a Green Product ordering option. AO6603 and AO6603L are electrically identical. < 290mΩ (VGS = 2.5V) < 185mΩ (VGS = 2.5V) < 425mΩ (VGS = 1.8V) < 265mΩ (VGS = 1.8V) D2 D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 G1 D1 S1 D2 G2 S1 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source Voltage 20 DS VGS Gate-Source Voltage ±8 Continuous Drain Current A Pulsed Drain Current TA=70°C TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range -2.3 1.4 -1.8 15 -30 1.15 1.15 0.73 0.73 -55 to 150 -55 to 150 ID IDM PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA C Steady-State Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. ±12 1.7 TA=25°C B Max p-channel -30 Symbol RθJA RθJL Typ 78 106 64 Max 110 150 80 Units V V A W °C Units °C/W °C/W °C/W AO6603 N-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, V DS=5V 5 VGS=4.5V, I D=1.7A TJ=125°C VGS=2.5V, I D=1A Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 0.55 0.8 V 186 225 262 315 241 290 mΩ 425 mΩ A 2.8 DYNAMIC PARAMETERS Ciss Input Capacitance Coss nA 326 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VGS=0V, VDS=0V, f=1MHz VGS=4.5V, V DS=10V, I D=1.7A VGS=5V, VDS=10V, RL=3Ω, RGEN=3Ω 1 V 0.4 A 125 pF 17 pF 14 pF 3 4 Ω 1.57 8.1 nC 0.13 nC 0.36 nC 3.2 ns 4 ns 15.5 ns 2.4 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=1A, dI/dt=100A/µs 6.7 Body Diode Reverse Recovery Charge IF=1A, dI/dt=100A/µs 1.6 Qrr mΩ S 0.69 101 VGS=0V, VDS=10V, f=1MHz µA 25 VGS=1.8V, I D=0.7A VSD Crss 5 VDS=5V, ID=1.7A Forward Transconductance IS V 1 TJ=55°C gFS Units 20 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max VDS=16V, VGS=0V IDSS RDS(ON) Typ 16 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 2: Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6603 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 10 5.0V 8.0V 8 VDS=5V 3 6 ID(A) ID (A) 4.0V 3.0V 4 2 2.5V 125°C 1 2 25°C VGS=2.0V 0 0 0 1 2 3 4 5 0 0.5 500 Normalized On-Resistance VGS=1.8V 400 RDS(ON) (mΩ) 1.5 1.8 450 350 300 VGS=2.5V 250 VGS=4.5V 200 150 100 0 1 2 3 1.6 VGS=1.8V ID=1.7A 2 2.5 3 VGS=2.5V ID=1.7A 1.4 VGS=4.5V ID=1.7A 1.2 1 0.8 4 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 600 1E+01 ID=1.7A 500 1E+00 125°C 1E-01 400 IS (A) RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 300 25°C 1E-02 1E-03 200 25°C 100 1E-04 1E-05 0 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.5 1.0 1.5 VSD (Volts) Figure 6: Body-Diode Characteristics 2.0 AO6603 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 5 VGS (Volts) Capacitance (pF) VDS=10V ID=1.7A 4 3 2 150 Ciss 100 1 Coss 50 0 0 0 2 4 6 0 8 10.0 15 RDS(ON) limited 1.0 10µs 1ms 10ms 10s DC 10 0 0.001 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 20 5 1s 0.1 15 TJ(Max)=150°C TA=25°C 100µs 0.1s ZθJA Normalized Transient Thermal Resistance 10 20 TJ(Max)=150°C TA=25°C Power (W) 100.0 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO6603 P-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS ID=-250µA ID(ON) On state drain current VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2.3A RDS(ON) gFS VSD IS Typ V µA ±100 nA -1 -1.4 V 107 135 135 185 mΩ 195 8 -0.85 265 mΩ -1 S V -1.35 A -10 A TJ=125°C Static Drain-Source On-Resistance Units -1 -5 TJ=55°C -0.6 Max VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-2.3A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current mΩ DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz 409 55 42 pF pF pF VGS=0V, VDS=0V, f=1MHz 12 Ω SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime VGS=-4.5V, VDS=-15V, ID=-2.5A 0.72 1.34 4.8 nC nC nC 8.5 10 55 25.5 26 15.6 ns ns ns ns tr tD(off) tf trr Qrr VGS=-10V, VDS=-15V, RL=6Ω, RGEN=6Ω Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time IF=-2.5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given n application application depends depends on the on user's the user's specific specific board board design. design. The The current current rating rating is based is based on the on tthe ≤ 10s t ≤ 10s thermal thermal resistance resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. rating.R5 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. Rev2: August 2005 AO6603 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -5V -10V 15 8 25°C -4V 6 VGS=-3.5V -ID(A) -ID (A) VDS=-5V -4.5V 10 -3V 125°C 4 -2.5V 5 2 -2V 0 0 0 1 2 3 4 5 0 0.5 250 1.5 2 2.5 3 3.5 4 1.6 225 Normalized On-Resistance VGS=-2.5V 200 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 175 150 VGS=-4.5V 125 100 VGS=-10V 75 VGS=-4.5V, VGS=-10V 1.4 VGS=-2.5V 1.2 ID=-2.5A 1 50 0 1 2 3 4 5 0.8 6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 300 1.0E+00 ID=-2.5A 1.0E-01 -IS (A) RDS(ON) (mΩ) 200 125°C 150 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 350 250 25 125°C 1.0E-02 1.0E-03 25°C 100 1.0E-04 25°C 1.0E-05 50 1.0E-06 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6603 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=-15V ID=-2.5A 500 Capacitance (pF) -VGS (Volts) 4 3 2 1 400 Ciss 300 200 Coss 100 0 0 0 1 2 3 4 5 6 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 20 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 10µs 10.0 15 Power (W) 100µs RDS(ON) limited 1ms 0.1s 10ms 1.0 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 5 1s Z θJA Normalized Transient Thermal Resistance 5 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000