AOSMD AO6603

AO6603
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
p-channel
-30V
VDS (V) = 20V
ID = 1.7 (VGS = 4.5V) -2.5A
RDS(ON)
< 225mΩ (VGS = 4.5V) < 135mΩ (VGS = -10V)
The AO6603 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO6603 is Pb-free (meets ROHS
& Sony 259 specifications). AO6603L is a Green
Product ordering option. AO6603 and AO6603L are
electrically identical.
< 290mΩ (VGS = 2.5V)
< 185mΩ (VGS = 2.5V)
< 425mΩ (VGS = 1.8V)
< 265mΩ (VGS = 1.8V)
D2
D1
TSOP6
Top View
G1
S2
G2
1 6
2 5
3 4
G1
D1
S1
D2
G2
S1
S2
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Max n-channel
V
Drain-Source Voltage
20
DS
VGS
Gate-Source Voltage
±8
Continuous Drain
Current A
Pulsed Drain Current
TA=70°C
TA=25°C
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
-2.3
1.4
-1.8
15
-30
1.15
1.15
0.73
0.73
-55 to 150
-55 to 150
ID
IDM
PD
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-AmbientA
C
Steady-State
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
±12
1.7
TA=25°C
B
Max p-channel
-30
Symbol
RθJA
RθJL
Typ
78
106
64
Max
110
150
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
AO6603
N-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, V DS=5V
5
VGS=4.5V, I D=1.7A
TJ=125°C
VGS=2.5V, I D=1A
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
0.55
0.8
V
186
225
262
315
241
290
mΩ
425
mΩ
A
2.8
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
nA
326
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, V DS=10V, I D=1.7A
VGS=5V, VDS=10V, RL=3Ω,
RGEN=3Ω
1
V
0.4
A
125
pF
17
pF
14
pF
3
4
Ω
1.57
8.1
nC
0.13
nC
0.36
nC
3.2
ns
4
ns
15.5
ns
2.4
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=1A, dI/dt=100A/µs
6.7
Body Diode Reverse Recovery Charge
IF=1A, dI/dt=100A/µs
1.6
Qrr
mΩ
S
0.69
101
VGS=0V, VDS=10V, f=1MHz
µA
25
VGS=1.8V, I D=0.7A
VSD
Crss
5
VDS=5V, ID=1.7A
Forward Transconductance
IS
V
1
TJ=55°C
gFS
Units
20
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
VDS=16V, VGS=0V
IDSS
RDS(ON)
Typ
16
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 2: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6603
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4
10
5.0V
8.0V
8
VDS=5V
3
6
ID(A)
ID (A)
4.0V
3.0V
4
2
2.5V
125°C
1
2
25°C
VGS=2.0V
0
0
0
1
2
3
4
5
0
0.5
500
Normalized On-Resistance
VGS=1.8V
400
RDS(ON) (mΩ)
1.5
1.8
450
350
300
VGS=2.5V
250
VGS=4.5V
200
150
100
0
1
2
3
1.6
VGS=1.8V
ID=1.7A
2
2.5
3
VGS=2.5V
ID=1.7A
1.4
VGS=4.5V
ID=1.7A
1.2
1
0.8
4
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
600
1E+01
ID=1.7A
500
1E+00
125°C
1E-01
400
IS (A)
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
125°C
300
25°C
1E-02
1E-03
200
25°C
100
1E-04
1E-05
0
2
3
4
5
6
7
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.5
1.0
1.5
VSD (Volts)
Figure 6: Body-Diode Characteristics
2.0
AO6603
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
5
VGS (Volts)
Capacitance (pF)
VDS=10V
ID=1.7A
4
3
2
150
Ciss
100
1
Coss
50
0
0
0
2
4
6
0
8
10.0
15
RDS(ON)
limited
1.0
10µs
1ms
10ms
10s
DC
10
0
0.001
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
10
20
5
1s
0.1
15
TJ(Max)=150°C
TA=25°C
100µs
0.1s
ZθJA Normalized Transient
Thermal Resistance
10
20
TJ(Max)=150°C
TA=25°C
Power (W)
100.0
5
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
ID (Amps)
Crss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO6603
P-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
-30
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-2.3A
RDS(ON)
gFS
VSD
IS
Typ
V
µA
±100
nA
-1
-1.4
V
107
135
135
185
mΩ
195
8
-0.85
265
mΩ
-1
S
V
-1.35
A
-10
A
TJ=125°C
Static Drain-Source On-Resistance
Units
-1
-5
TJ=55°C
-0.6
Max
VGS=-4.5V, ID=-2A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-2.3A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
mΩ
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
409
55
42
pF
pF
pF
VGS=0V, VDS=0V, f=1MHz
12
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
VGS=-4.5V, VDS=-15V, ID=-2.5A
0.72
1.34
4.8
nC
nC
nC
8.5
10
55
25.5
26
15.6
ns
ns
ns
ns
tr
tD(off)
tf
trr
Qrr
VGS=-10V, VDS=-15V, RL=6Ω,
RGEN=6Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
IF=-2.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given
n application
application
depends
depends
on the
on user's
the user's
specific
specific
board
board
design.
design.
The The
current
current
rating
rating
is based
is based
on the
on tthe
≤ 10s
t ≤ 10s
thermal
thermal
resistance
resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
rating.R5
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
Rev2: August 2005
AO6603
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
20
-5V
-10V
15
8
25°C
-4V
6
VGS=-3.5V
-ID(A)
-ID (A)
VDS=-5V
-4.5V
10
-3V
125°C
4
-2.5V
5
2
-2V
0
0
0
1
2
3
4
5
0
0.5
250
1.5
2
2.5
3
3.5
4
1.6
225
Normalized On-Resistance
VGS=-2.5V
200
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
175
150
VGS=-4.5V
125
100
VGS=-10V
75
VGS=-4.5V, VGS=-10V
1.4
VGS=-2.5V
1.2
ID=-2.5A
1
50
0
1
2
3
4
5
0.8
6
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+01
300
1.0E+00
ID=-2.5A
1.0E-01
-IS (A)
RDS(ON) (mΩ)
200
125°C
150
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
350
250
25
125°C
1.0E-02
1.0E-03
25°C
100
1.0E-04
25°C
1.0E-05
50
1.0E-06
0
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO6603
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
5
VDS=-15V
ID=-2.5A
500
Capacitance (pF)
-VGS (Volts)
4
3
2
1
400
Ciss
300
200
Coss
100
0
0
0
1
2
3
4
5
6
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
20
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
10.0
15
Power (W)
100µs
RDS(ON)
limited
1ms
0.1s
10ms
1.0
10s
DC
0
0.001
0.1
0.1
1
10
100
-VDS (Volts)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
10
5
1s
Z θJA Normalized Transient
Thermal Resistance
5
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
-ID (Amps)
Crss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000