Product Brief Power stage 3x3 Halfbridge handles 12.5 A in 9 mm² Dual FET power stages in a single leadless SMD package integrate the low side and high side MOSFET of a synchronous DC/DC converter into a 3x3mm2 package outline. The new package enables customer to shrink their design by replacing two seperate discrete packages. This offers the designer a shrink potential up to 85%. Both, the small package outline and the interconnection of the two MOSFETs minimize the loop inductance and boosts the efficiency. With the new OptiMOSTM 30V technology the power stage 3x3 achieves a peak efficiency of 93.5 % and can handle an application current of up to 12.5 A. Features Best in class on-state resistance Asymmetric halfbridge in a small package outline 3.0 x 3.0 mm² Low profile (0.8 mm) Internally connected low-side and high-side (lowest loop inductance) Optimized thermal design with a larger exposed die-pad for the low-side Optimized pin-out Multiple sources available RoHS compliant and halogen free Benefits Compact and simplified layout for a DC/DC converter Easy and compact layout Optimized layout with lowest loop inductivity Highest efficiency Improved power loop (connection to Cin) Environmentally friendly Different die pad size for low-side and high-side for optimized power dissipation Partcount reduction Large area for gnd connection (compared to 2 single devices) Applications Vin D1 D1 D1 G1 D2 Cin Vphase S1/D2 S2 S2 S2 G2 gnd Example www.infineon.com/optimos Notebook peripheral Netbook core Motherboard peripheral Server peripheral Telecom Product Brief Power stage 3x3 Halfbridge handles 12.5 A in 9 mm² With the BSZ0907ND the power stage achieves 93.5 % peak efficiency for 300 kHz switching frequency. The max application current is 12.5A with a maximum package temperature of 112°C. 1,00 = BSZ0907 VIN = 12 V, VOUT = 1.5 V LOUT = 1.2 µH, Vdrive = 5 V fswitch = 300 kHz 0,98 0,96 Efficiency [%] 0,94 0,92 0,90 0,88 0,86 IOUT = 12.5 A, Tcase, top max. = 112 °C Tambient = 25°C, no airflow 0,84 0,82 0,80 0 2 4 6 8 10 12 14 Output Current [A] Product Portfolio power stage 3x3 Q1 1) Q2 VDSS [V] ID (TC= 70°C) [A] RDS(on) max. @ 4.5 V [mOhm] RDS(on) max. @ 10 V [mOhm] ID (TC= 70°C) [A] RDS(on) max. @ 4.5 V [mOhm] RDS(on) max. @ 10 V [mOhm] BSZ0907ND1) 30 25 13,5 9,5 30 10,0 7,2 BSZ0908ND1) 30 15 32,0 19,0 30 13,0 9,0 Available Q4/2011 Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2011 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B152-H9578-G1-X-7600-DB2011-0005 Date: 11 / 2012 Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.