Product Brief Features Power stage 5x6 Asymmetric halfbridge handles 30A in a 30mm² footprint Dual FET power stages in a single leadless SMD package integrate the low side and high side MOSFET of a synchronous DC/DC converter into a 5x6mm2 package outline. Customers can shrink their design up to 85% by replacing two seperate discrete packages such as SO-8 or Super SO8 with this new package. Both the small package outline and the interconnection of the two MOSFETs within the package minimize the loop inductance which boosts efficiency. With the new OptiMOS™ technology the power stage 5x6 achieves a peak efficiency of 93.5% and can handle an application current higher than 30A. Standardizing power packages benefits the customer as the number of different package outlines available in the market place is minimized. Easy and compact layout Asymmetric halfbridge in a small package outline 5.0x6.0mm Best in class on-state resistance Low profile (1mm) Internally connected low-side and high-side (lowest loop inductance) Optimized thermal design with a larger exposed die-pad for the low-side MOSFET Optimized pin-out Multiple sources available RoHS compliant and halogen free Benefits Compact and simplified layout for a DC/DC converter Optimized layout with lowest loop inductivity Highest efficiency Environmentally friendly Applications Improved power loop (connection to Cin) Different die-pad size for low-side and high-side (larger die-pad for low-side due to higher power dissipation) Notebook core, peripheral Motherboard core, peripheral Large area for gnd connection Server Telecom 6mm Vin Cin Cin Vin Vin Vin GHS Vin Cin Vsw Gnd Gnd Gnd Gnd GLS Vias to driver on board bottom www.infineon.com/powerstage 5mm Vsw Inductor Product Brief Power stage 5x6 Asymmetric halfbridge handles 30A in a 30mm² footprint 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 120 110 100 BSC0921NDI BSC0911ND VIN=12V VOUT=1.8V FSW=440KHz L=210nH (0.18mOhm) Still Air 0.0 3.0 6.0 9.0 Case top temperature [°C] Efficiency [%] The power stage 5x6 can handle in a very compact footprint up to 54W with a top side temperature lower than 100°C and peak efficiency of 93,5%. 90 80 70 60 50 40 VIN=12V VOUT=1.8V FSW=440KHz L=210nH (0.18mOhm) Still Air 30 20 10 12.0 15.0 18.0 21.0 Output current [A] 24.0 27.0 0 30.0 0 5 10 15 Output current [A] 20 BSC0921NDI BSC0911ND 25 30 Product portfolio power stage 5x6 Qg tot @Vgs=4,5 typ Part Number Schottky Body Diode1 BVDSS (V) RDS(on) @Vgs=4,5 max BSC0910NDI2 Y 25 BSC0911ND N 25 4.8 mOhm 1.7 mOhm 7.7 nC 25.0 nC BSC0921NDI Y 30 7.0 mOhm 2.1 mOhm 5.8 nC 21.0 nC High Side Low Side 5.9 mOhm 1.6 mOhm High Side 7.7 nC Sample Status Low Side 25.0 nC BSC0923NDI Y 30 7.0 mOhm 3.7 mOhm 5.2 nC 12.2 nC BSC0924NDI Y 30 7.0 mOhm 5.2 mOhm 5.2 nC 8.6 nC BSC0925ND N 30 6.4 mOhm 6.4 mOhm 5.2 nC 6.7 nC ES / Q2 2012 available Monolithic integrated Schottky-like diode 2 release in Q2/2012 1 Vin Vin Vin GHS Q2 Vin Vsw Vsw Gnd Gnd Gnd GLS Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2011 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B152-H9655-G1-X-7600-DB2011-0022 Date: 11 / 2012 S2 (Gnd) 5 4 D1(Vin) S2 (Gnd) 6 3 D1(Vin) S2 (Gnd) 7 2 D1(Vin) 1 G1 (GHS) G2 (GLS) 8 Q1 Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.