UNISONIC TECHNOLOGIES CO., LTD Preliminary UNA10R220H Power MOSFET 7A, 100V N-CHANNEL FAST SWITCHING MOSFET DESCRIPTION The UTC UNA10R220H is an N-Channel fast switching MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance and low gate charge, etc. The UTC UNA10R220H is suitable for secondary synchronous rectifier and LED TV back light. SOP-8 FEATURES * RDS(ON) < 22 mΩ @ VGS=10V, ID=7A * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UNA10R220HG-S08-R Pin Assignment: S: Source Package G: Gate SOP-8 D: Drain 1 S 2 S Pin Assignment 3 4 5 6 7 S G D D D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-073.b UNA10R220H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V (Note 5) RATINGS UNIT 100 V ±20 V TA=25°C 7 A ID 5 A TA=70°C Pulsed Drain Current (Note 2) IDM 35 A Single Pulse Avalanche Energy (Note 3) EAS 16 mJ Avalanche Current IAS 13 A Power Dissipation PD 2.5 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=55mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD ≤ 2.4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 5. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper. SYMBOL VDSS VGSS THERMAL DATA PARAMETER SYMBOL RATINGS t≤10s 50 Junction to Ambient (Note) θJA Steady-State 85 Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W 2 of 6 QW-R209-073.b UNA10R220H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Temperature Coefficient SYMBOL TEST CONDITIONS BVDSS ID=250µA, VGS=0V △BVDSS/△TJ Reference to 25°C, ID=1mA VDS=80V, VGS=0V, TJ=25°C Zero Gate Voltage Drain Current IDSS VDS=80V, VGS=0V, TJ=55°C Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA △V VGS(TH) Temperature Coefficient GS(TH) Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7A (Note 2) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=15V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A Gate to Source Charge QGS IG=100µA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=10V, VDD=30V, Rise Time tR RG=25Ω, ID=0.5A Turn-OFF Delay Time tD(OFF) MIN www.unisonic.com.tw MAX UNIT 1 5 +100 -100 V V/°C µA µA nA nA 100 0.089 2.0 Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage (Note 2) VSD IS=1A, VGS=0V, TJ=25°C Continuous Source Current (Note 1, 3) IS VG=VD=0V, Force Current Pulsed Source Current (Note 2, 3) ISM Body Diode Reverse Recovery Time tRR IF=7A, dI/dt=100A/µs, TJ=25°C Body Diode Reverse Recovery Charge QRR Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2% 3. The power dissipation is limited by 150°C junction temperature. UNISONIC TECHNOLOGIES CO., LTD TYP 4.0 V mV/°C 22 mΩ -4.66 1120 240 72 1.9 pF pF pF Ω 160 19 17.5 152 75 245 95 nC nC nC ns ns ns ns 1.2 7 35 44 25 V A A nS nC 3 of 6 QW-R209-073.b UNA10R220H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-073.b UNA10R220H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-073.b UNA10R220H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-073.b