Analog Power AM3520C N & P-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 58 @ VGS = 4.5V 82 @ VGS = 2.5V 20 160 @ VGS = 1.8V 112 @ VGS = -4.5V 172 @ VGS = -2.5V -20 210 @ VGS = -1.8V ID (A) 3.6 3.1 2.2 -2.6 -2.1 -1.9 Typical Applications: • Load Switches • DC/DC Conversion • Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±12 ±12 TA=25°C 3.6 -2.6 ID Continuous Drain Current a TA=70°C 2.8 -2 b IDM Pulsed Drain Current 10 -10 a I 1.6 -1.5 Continuous Source Current (Diode Conduction) S T =25°C 1.15 1.15 A PD Power Dissipation a TA=70°C 0.7 0.7 TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Maximum Junction-to-Ambient a Symbol Maximum 110 RθJA 150 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM3520C_1A Analog Power AM3520C Electrical Characteristics Parameter Gate-Source Threshold Voltage Symbol VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs Diode Forward Voltage a VSD Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±12 V VDS = 16 V, VGS = 0 V (N-ch) VDS = -16 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 4.5 V (N-ch) VDS = -5 V, VGS = -4.5 V (P-ch) VGS = 4.5 V, ID = 2.9 A (N-ch) VGS = 2.5 V, ID = 2.3 A (N-ch) VGS = 1.8 V, ID = 1.9 A (N-ch) VGS = -4.5V, ID = -2.1 A (P-ch) VGS = -2.5V, ID = -1.7 A (P-ch) VGS = -1.8 V, ID = -1.3 A (P-ch) VDS = 10 V, ID = 5.3 A (N-ch) VDS = -10 V, ID = -5.3 A (P-ch) IS = 0.8 A, VGS = 0 V (N-ch) IS = -0.75A, VGS = 0 V (P-ch) Min Typ Max 0.4 -0.4 ±100 1 -1 8 -8 Unit V V nA uA A A 58 82 160 112 172 210 5 4 0.68 -0.71 mΩ mΩ S S V V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss N - Channel VDS = 10 V, VGS = 4.5 V, ID = 2.9 A N - Channel VDD = 10 V, RL = 2.9 Ω, ID = 3.4 A, VGEN = 4.5 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P - Channel VDS = -10 V, VGS = -4.5 V, ID = -2.1 A P - Channel VDD = -10 V, RL = 4.7 Ω, ID = -2.1 A, VGEN = -4.5 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz 2 6.9 1.1 2.3 10 23 36 16 439 78 68 10 1.5 3.1 10 45 39 25 666 88 80 nC ns pF nC ns pF Publication Order Number: DS_AM3520C_1A Analog Power AM3520C Typical Electrical Characteristics - N-channel 5 0.1 4 0.08 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 1.8V 0.06 2V 2.5V 0.04 3V,3.5V,4V,4.5V,6V 0.02 3 2 1 0 0 0 1 2 3 4 0 5 1 ID-Drain Current (A) 1. On-Resistance vs. Drain Current 3 2. Transfer Characteristics 10 0.2 TJ = 25°C ID = 2.9A TJ = 25°C 0.15 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 VGS - Gate-to-Source Voltage (V) 0.1 0.05 0 1 0.1 0.01 0 2 4 6 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5 800 F = 1MHz 6V,4.5V,4V,3.5V,3V 700 600 2.5V 2V 3 Capacitance (pf) ID - Drain Current (A) 4 1.8V 2 1 0 Ciss 500 400 300 200 Coss 100 Crss 0 0 0.1 0.2 0.3 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM3520C_1A Analog Power AM3520C Typical Electrical Characteristics - N-channel 2 VDS = 10V ID = 2.9A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 8 6 4 2 0 1.5 1 0.5 0 5 10 15 -50 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 30 PEAK TRANSIENT POWER (W) 100 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit 25 20 15 10 5 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 0.1 0.05 RθJA = 150 °C /W 0.02 P(pk) Single Pulse t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM3520C_1A Analog Power AM3520C Typical Electrical Characteristics - P-channel 5 TJ = 25°C 4 1.8V 0.1 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 0.15 2V 2.5V 0.05 3V,3.5V,4V,4.5V,6V 3 2 1 0 0 0 1 2 3 4 ID-Drain Current (A) 0 5 1 1. On-Resistance vs. Drain Current 10 TJ = 25°C ID = -2A TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 3 2. Transfer Characteristics 0.3 0.2 0.1 0 1 0.1 0.01 0 2 4 6 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 1400 5 F = 1MHz 6V,4.5V,4V, 3.5V,3V 4 1200 2.5V 2V 3 Capacitance (pf) ID - Drain Current (A) 2 VGS - Gate-to-Source Voltage (V) 1.8V 2 1000 Ciss 800 600 400 1 Coss 200 Crss 0 0 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 1000 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 6. Capacitance 5 Publication Order Number: DS_AM3520C_1A Analog Power AM3520C Typical Electrical Characteristics - P-channel 2 VDS = -10V ID = -2A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 8 6 4 2 1.5 1 0.5 0 0 5 10 15 -50 20 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 30 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit Limited by RDS 25 20 15 10 0 0.001 0.01 0.1 1 10 100 5 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA 0.1 0.05 RθJA = 150 °C /W 0.02 Single Pulse P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AM3520C_1A Analog Power AM3520C Package Information Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 7 Publication Order Number: DS_AM3520C_1A