AM3520C Analog Power N & P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • 20 -20 rDS(on) (Ω) ID (A) 0.058 @ VGS = 4.5V 0.082 @ VGS = 2.5V 0.160 @ VGS = 1.8V 0.112 @ VGS = -4.5V 0.172 @ VGS = -2.5V 0.210 @ VGS = -1.8V 3.7 3.1 2.2 -2.7 -2.2 -2.0 TSOP-6 Top View Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology D1 G1 1 6 D1 S2 G2 2 3 5 4 S1 D2 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol N-Channe l P-Channe l Units Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 o TA=25 C a Continuous Drain Current o ID TA=70 C b IDM Pulsed Drain Current a IS Continuous Source Current (Diode Conduction) o TA=25 C a Power Dissipation o -2.7 2.9 -2.1 8 -8 1.05 -1.05 A A 1.15 PD W 0.7 TA=70 C Operating Junction and Storage Temperature Range 3.7 TJ, Tstg o C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol t <= 10 sec Steady State RthJA N-Channel Typ Max P-Channel Typ Max 93 130 93 130 110 150 110 150 Unit o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM3520_F AM3520C Analog Power o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Ch Limits Min Typ Max Unit Static VGS(th) Gate-Threshold Voltage Gate-Body Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current A ID(on) A Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage A A rDS(on) gfs VSD VGS = VDS, ID = 250 uA N 1 VGS = VDS, ID = -250 uA VDS = 0 V, VGS = 12 V VDS = 0 V, VGS = -12 V VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, T J = 55oC VDS = -16 V, VGS = 0 V, TJ = 55oC VDS = 5 V, VGS = 4.5 V VDS = -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 3.7 A VGS = -4.5 V, ID = 3.1 A VGS = 2.5 V, ID = 2.7 A VGS = -2.5 V, ID = -2.2 A VGS = 1.8 V, ID = 2.2 A VGS = -1.8 V, ID = -2.0 A VDS = 5 V, ID = 3.7 A VDS = -5 V, ID = 3.1 A IS = 1.05 A, VGS = 0 V IS = -1.05 A, VGS = 0 V P N P N P N P N P N P N P N P N P N P -1 N-Channel VDS=15V, VGS=4.5V, ID=2.7A P-Channel VDS=-15V, VGS=-4.5V, ID=-3.1A N P N P N 7.5 3.8 0.6 0.6 1.0 P N P N P N P N P 1.5 5 5 12 15 13 20 7 20 V 100 -100 1 -1 10 -10 5 -5 uA uA uA A 0.058 0.112 0.082 0.172 0.160 0.210 10 5 0.80 -0.83 Ω S S b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall-Time tr td(off) tf N-Chaneel VDD=15V, VGS=4.5V, ID=1A , RGEN=15Ω, P-Channel VDD=-15V, VGS=-4.5V, ID=-1A RGEN=15Ω nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM3520_F AM3520C Analog Power Typical Electrical Characteristics (N-Channel) 10 12 VGS = 4.5V 10 8 2.0V 6 4 o 125 C 6 4 2 2 0 0 0 1 2 3 0.5 1 1.5 V DS - Drain-to-Source Voltage (V) 2 2.5 3 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2 450 400 CISS 1.8 350 C - Capacitance (pF) rDS(ON) - Normalized On-Resistance 25oC 8 ID - Drain Current (A) ID - Drain Current (A) T A = -55oC 2.5V 1.6 1.4 2.5V 1.2 300 250 200 150 COSS 100 4.5V 1 50 CRSS 0 0.8 0 2 4 6 8 10 0 12 5 ID - Drain Current (A) 10 On-Resistance vs. Drain Current 20 Capacitance 10 r DS(ON) - On-Resistance (Normalized) 1.6 8 Vgs Voltage ( V ) 15 V DS - Drain-to-Source Voltage (V) 6 4 2 0 0 2 4 6 8 VGS = 4.5V 1.4 1.2 1 0.8 0.6 -50 Q g, Gate C harge ( nC ) 0 25 50 75 100 125 150 o TJ - Junction Tempertaure ( C) Gate Charge On-Resistance vs. Junction Temperature 3 PRELIMINARY -25 Publication Order Number: DS-AM3520_F AM3520C Analog Power Typical Electrical Characteristics (N-Channel) 100 0.22 rDS(ON) - On-Resistance (OHM) IS - Source Current (A) 10 o T A = 125 C 1 25oC 0.1 0.01 0.001 0.18 0.14 0.1 0.06 0.02 0.0001 0 0.2 0.4 0.6 0.8 1 1 1.2 2 3 4 5 V GS - Gate-to-Source Voltage (V) V SD, - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 1.2 10 ID = 250µA 8 1 0.9 Power (W) V GS(th), Variance (V) 1.1 0.8 0.7 6 4 0.6 2 0.5 0.4 0 -50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 o TJ - Temperature ( C) 100 1000 Time (sec) Threshold Voltage Single Pulse Power 1 D = 0.5 Normailized Effective Transient Thermal Impedance R θJA(t) = r(t) + R θJA R θJA = 130oC/W 0.2 0.1 0.1 0.05 P(pk) TJ - TA = P * R θJA(t) Duty Cycle, D = t1 / t2 t1 0.02 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 PRELIMINARY Publication Order Number: DS-AM3520_F AM3520C Analog Power Typical Electrical Characteristics (P-Channel) 6 5 VGS =- 4.5V 4 3 -2.0V 2 -1.8V 4 o 125 C 3 2 1 1 0 0 0 0.5 1 1.5 2 2.5 0.5 1 1.5 VDS - Drain-to-Soruce Voltage (V) 2 2.5 3 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 600 2.75 2.5 500 C - Capacitance (pF) rDS(ON) - Normalized On-Resistance 25 oC TA = -55 oC -2.5V ID - Drain Current (A) ID - Drain Current (A) 5 2.25 2 1.75 -2.5V 1.5 1.25 400 CISS 300 200 COSS 100 -4.5V 1 CRSS 0 0.75 0 1 2 3 4 5 0 6 5 10 15 20 VDS - Drain-to- Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance rDS(ON), - On-Resistance (Normalized) -10 Vgs Voltage ( V ) -8 -6 -4 -2 0 0 3 6 9 12 15 1.6 VGS = -4.5V 1.4 1.2 1 0.8 0.6 -50 0 25 50 75 100 125 TJ - Junction Temperature (oC) Qg, Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 5 PRELIMINARY -25 Publication Order Number: DS-AM3520_F 150 AM3520C Analog Power Typical Electrical Characteristics (P-Channel) 0.4 r DS(ON) - On-Resistance (OHM) 100 TA = 125oC 1 25 oC 0.1 0.01 0.001 0.3 0.25 0.2 0.15 0.1 0.05 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1 1.4 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 10 1.3 8 ID =- 250µA Power (W) 1.2 V GS(th) Variance (V) 1.1 1 0.9 6 4 0.8 2 0.7 0.6 0 -50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 TJ, - Temperature (oC) 100 1000 Time (sec) Threshold Voltage Single Pulse Power 1 D = 0.5 R θJA(t) = r(t) + R θJA Normailized Effective Transient Thermal Impedance IS - Source Current (A) 10 0.35 R θJA = 130oC/W 0.2 0.1 0.1 0.05 P(pk) TJ - TA = P * R θJA(t) Duty Cycle, D = t1 / t2 t1 0.02 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 6 PRELIMINARY Publication Order Number: DS-AM3520_F AM3520C Analog Power Package Information TSOP-6: 6LEAD 7 PRELIMINARY Publication Order Number: DS-AM3520_F