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Analog Power
AM25P03-60D
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
59 @ VGS = -4.5V
-26.5
95 @ VGS = -2.5V
ID (A)
24
19
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature TO-252 Surface Mount Package
Saves Board Space
High power and current handling capability
Extended VGS range (±25) for battery pack
applications
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
Drain-Source Voltage
-26.5
VDS
V
±12
Gate-Source Voltage
VGS
a
o
TA=25 C ID
Continuous Drain Current
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
a
IDM
±40
IS
-30
o
TA=25 C P D
Power Dissipation
THERMAL RESISTANCE RATINGS
Parameter
Symbol
a
RθJA
RθJC
A
A
W
50
TJ, Tstg
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Case
24
o
C
-55 to 175
Maximum
Units
50
o
3.0
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
May, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM25P03-60_D
Analog Power
AM25P03-60D
SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
A
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
rDS(on)
-1
VDS = 0 V, VGS = ±12 V
±100
nA
VDS = -21 V, VGS = 0 V
-1
-5
uA
o
VDS = -21 V, VGS = 0 V, TJ = 55 C
VDS = -5 V, VGS = -10 V
VGS = -4.5 V, ID = -24 A
VGS = -2.5 V, ID = -19 A
-41
A
59
95
mΩ
gfs
VSD
VDS = -15 V, ID = -24 A
IS = -41 A, VGS = 0 V
31
-0.7
S
V
Qg
Qgs
Qgd
VDS = -15 V, VGS = -4.5 V,
ID = -24 A
25.0
2.4
3.9
nC
td(on)
tr
td(off)
tf
VDD = -15 V, RL = 15 Ω , ID = -24
A,
VGEN = -10 V, RG = 6Ω
10
2.8
53.6
46
nS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
May, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM25P03-60_D
Analog Power
AM25P03-60D
Typical Electrical Characteristics
20
15
T A = -55oC
-2.5V
25oC
15
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -4.5V
10
5
10
125oC
5
0
0
1
2
3
0
4
0.5
-V DS, DRAIN TO SOURCE VOLTAGE (V)
1
1.5
2
2.5
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1200
C - Capacitance (pF)
1000
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
VGS = -2.5V
1.2
800
Ciss
600
Coss
Crss
400
200
-4.5V
1
0
0
4
8
12
16
20
24
0.8
0
5
10
-ID, DIRAIN CURRENT (A)
15
VDS - Drain-to-Source Voltage (V)
20
Figure 4. Capacitance
Figure 3. On-Resistance vs. Drain Current
-10
RDS(ON), NORMALIZED
Vgs Voltage ( V )
-8
-6
-4
-2
DRAIN-SOURCE ON-RESISTANCE
1.6
VGS = -4.5V
1.4
1.2
1
0.8
0.6
0
0
4
8
12
16
-50
20
0
25
50
75
100
125
150
o
TJ, JUNCTION TEMPERATURE ( C)
Qg, Charge (nC)
Figure 5. Gate Charge
Figure 6. On-Resistance vs. Junction Temperature
3
May, 2005 - Rev. A
PRELIMINARY
-25
Publication Order Number:
DS-AM25P03-60_D
Analog Power
AM25P03-60D
Typical Electrical Characteristics
RDS(ON), ON-RESISTANCE (OHM)
0.15
10
1
o
T A = 125 C
0.1
o
25 C
0.01
0.001
0.12
0.09
0.06
0.03
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1
2
-V SD, BODY DIODE FORWARD VOLTAGE (V)
3
4
5
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Source-Drain Diode Forward Voltage
Figure 8. On-Resistance with Gate to Source Voltage
1.2
ID = -250µA
50
1
SINGLE PULSE
RθJA = 250°C/W
TA = 25°C
40
Power (W)
-V th, GATE-SOURCE THRESTHOLD
VOLTAGE (V)
0.8
0.6
30
20
10
0
0.4
0.001
-50
-25
0
25
50
75
100
125
0.01
0.1
1
150
10
100
1000
Time (sec)
o
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
1
D =0.5
Normalized Thermal Transient Junction to Ambient
RθJA (t) = r(t) +
0.2
0.1
Impedance
Normalized Effective Transient Thermal
-IS, REVERSE DRAIN CURRENT (A)
100
RθJA
RθJA = 250 °C/W
0.1
0.05
P(pk
0.02
t1
0.01
t2
0.01
TJ - TA = P *
RθJA (t)
Duty Cycle, D = t1
/t
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (se c)
Figure 11. Transient Thermal Response Curve
4
May, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM25P03-60_D
Analog Power
AM25P03-60D
Package Information
5
May, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM25P03-60_D