Analog Power AM9433P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 44 @ VGS = -4.5V -20 ID (A) -8.3 68 @ VGS = -2.5V -6.7 150 @ VGS = -1.8V -4.5 Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SO-8 Surface Mount Package Saves Board Space High power and current handling capability 1 8 2 7 3 6 4 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter -20 VDS Drain-Source Voltage V VGS ±12 Gate-Source Voltage TA=25oC Continuous Drain Currenta Pulsed Drain Current o TA=70 C b a Continuous Source Current (Diode Conduction) -8.3 ID IDM ±50 IS -2.1 o TA=25 C Power Dissipationa o TA=70 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t <= 10 sec Steady-State RθJA A 3.1 PD W 2.0 TJ, Tstg Operating Junction and Storage Temperature Range A -6.7 o C -55 to 150 Maximum 40 70 Units o C/W C/W o Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 March, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM9433_D Analog Power AM9433P SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = -250 uA Min Limits Unit Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A IDSS ID(on) A Drain-Source On-Resistance A Forward Tranconductance Diode Forward Voltage rDS(on) gfs VSD -0.7 VDS = 0 V, VGS = ±12 V ±100 nA VDS = -16 V, VGS = 0 V -1 -5 uA o VDS = -16 V, VGS = 0 V, TJ = 55 C VDS = -4.5 V, VGS = -10 V VGS = -4.5 V, ID = -8.3 A VGS = -2.5 V, ID = -6.7 A VGS = -2.5 V, ID = -4.5 A -50 A 44 68 150 VDS = -15 V, ID = -8.3 A IS = 2.5 A, VGS = 0 V mΩ 70 -0.6 S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd td(on) tr td(off) tf VDS = -10 V, VGS = -4.5 V, ID = -8.3 A VDD = -10 V, RL = 6 Ω , ID = -1 A, VGEN = -4.5 V 8 1.8 1.9 20 23 289 134 nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 March, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM9433_D Analog Power AM9433P Typical Electrical Characteristics (P-Channel) 20 15 VGS = -4.5V T A = -55oC -2.5V 25oC 15 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) -3.0V -2.0V 10 5 0 0 1 2 3 10 125oC 5 0 4 0.5 1 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. Output Characteristics 2.5 1500 CISS 1200 1.4 CAPACITANCE (pF) RDS(ON), NORMALIZED 2 Figure 2. Transfer Characteristics 1.6 DRAIN-SOURCE ON-RESISTANCE 1.5 -V GS, GATE TO SOURCE VOLTAGE (V) VGS = -2.5V 1.2 -4.5V 1 900 600 COSS 300 CRSS 0 0.8 0 0 5 10 -ID, DIRAIN CURRENT (A) 15 5 20 10 15 20 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 4. Capacitance Figure 3. On-Resistance vs. Drain Current -10 RDS(ON), NORMALIZED Vgs Voltage ( V ) -8 -6 -4 -2 DRAIN-SOURCE ON-RESISTANCE 1.6 VGS = -4.5V 1.4 1.2 1 0.8 0.6 0 0 4 8 12 16 -50 20 0 25 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE ( C) Qg, Charge (nC) Figure 5. Gate Charge Figure 6. On-Resistance vs. Junction Temperature 3 March, 2004 - Rev. A PRELIMINARY -25 Publication Order Number: DS-AM9433_D Analog Power AM9433P Typical Electrical Characteristics (N-Channel) RDS(ON), ON-RESISTANCE (OHM) 0.15 10 1 o T A = 125 C 0.1 o 25 C 0.01 0.001 0.0001 0.12 0.09 0.06 0.03 0 0 0.2 0.4 0.6 0.8 1 1.2 1 2 -V SD, BODY DIODE FORWARD VOLTAGE (V) 3 P(pk), PEAK TRANSIENT POWER (W) 1.2 ID = -250µA 1 0.8 0.6 0.4 -25 0 25 50 75 100 5 Figure 8. On-Resistance with Gate to Source Voltage 50 -50 4 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 7. Source-Drain Diode Forward Voltage -V th, GATE-SOURCE THRESTHOLD VOLTAGE (V) -IS, REVERSE DRAIN CURRENT (A) 100 125 150 40 30 20 10 0 0.001 o SINGLE PULSE RqJA = 125oC/W TA = 25oC 0.01 TA, AMBIENT TEMPERATURE ( C) Figure 9. Vth Gate to Source Voltage Vs Temperature 0.1 1 t1, TIME (SEC) 10 100 Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 D = 0.5 R qJ A(t) = r(t) + R qJ A R qJ A = 125 癈/W 0.2 0.1 0.1 0.0 P (pk) 0.02 t1 t2 TJ - TA = P * R qJ A(t) Duty C yc le , D = t1 / t2 0.01 0.01 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIM E (s e c ) Figure 11. Transient Thermal Response Curve 4 March, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM9433_D Analog Power AM9433P Package Information SO-8: 8LEAD H x 45° 5 March, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM9433_D