SHENZHENFREESCALE MC6415

Freescale
AO6 41 5/ MC6 41 5
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
90 @ VGS = -4.5V
-20
130 @ VGS = -2.5V
ID (A)
-2.9
-2.5
150 @ VGS = -1.8V
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
-2.3
1
6
2
5
3
4
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
VDS
-20
Drain-Source Voltage
V
±12
VGS
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
-2.9
ID
IDM
±16
IS
-1.0
o
TA=25 C
a
Power Dissipation
o
TA=70 C
Maximum Junction-to-Ambienta
Symbol
t <= 5 sec
A
2.0
PD
W
1.3
o
TJ, Tstg -55 to 150
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
A
-2.4
RθJA
Maximum
62.5
110
C
Units
o
C/W
C/W
o
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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AO6 41 5/ MC6 41 5
SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
A
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
rDS(on)
gfs
VSD
-0.7
VDS = 0 V, VGS = ±12 V
±100
nA
VDS = -16 V, VGS = 0 V
-1
-5
uA
o
VDS = -16 V, VGS = 0 V, TJ = 55 C
VDS = -4.5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -3.3 A
VGS = -2.5 V, ID = -2.9 A
VGS = -1.8 V, ID = -2.3 A
VDS = -10 V, ID = -4.9 A
IS = 1.7 A, VGS = 0 V
-10
A
90
130
150
8.0
-0.8
mΩ
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -10 V, VGS = -4.5 V,
ID = -4.9 A
VDD = -10 V, RL = 6 Ω , ID = -1 A,
VGEN = -4.5 V
8
1.8
1.9
22
35
45
25
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without further notic e to any products herein. Freescale makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor doesfreescale assume any liability arising ou t of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided infreescale data sheet s and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescaleproducts are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
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AO6 41 5/ MC6 41 5
Typical Electrical Characteristics
20
15
VGS = -4.5V
T A = -55oC
-2.5V
25oC
15
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
-3.0V
-2.0V
10
5
0
0
1
2
3
10
125oC
5
0
4
0.5
1
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
2.5
1500
CISS
1200
CAPACITANCE (pF)
1.4
VGS = -2.5V
1.2
-4.5V
1
900
600
COSS
300
CRSS
0
0.8
0
0
5
10
-ID, DIRAIN CURRENT (A)
15
5
20
10
15
20
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
-10
RDS(ON), NORMALIZED
-8
-6
-4
-2
DRAIN-SOURCE ON-RESISTANCE
1.6
ID=-3.6A
Vgs Voltage ( V )
RDS(ON), NORMALIZED
2
Figure 2. Transfer Characteristics
1.6
DRAIN-SOURCE ON-RESISTANCE
1.5
-V GS, GATE TO SOURCE VOLTAGE (V)
VGS = -4.5V
1.4
1.2
1
0.8
0.6
0
-50
0
4
8
12
16
20
-25
0
25
50
75
100
125
150
o
TJ, JUNCTION TEMPERATURE ( C)
Qg, Charge (nC)
Figure 5. Gate Charge
Figure 6. On-Resistance vs. Junction Temperature
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AO6 41 5/ MC6 41 5
Typical Electrical Characteristics
RDS(ON), ON-RESISTANCE (OHM)
0.15
10
1
T A = 125oC
0.1
o
25 C
0.01
0.001
ID=-3.6A
0.12
0.09
0.06
0.03
0
0.0001
1
0
0.2
0.4
0.6
0.8
1
2
1.2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
-V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Source-Drain Diode Forward Voltage
Figure 8. On-Resistance with Gate to Source Voltage
50
P(pk), PEAK TRANSIENT POWER (W)
1.2
-V th, GATE-SOURCE THRESTHOLD
VOLTAGE (V)
-IS, REVERSE DRAIN CURRENT (A)
100
ID = -250µA
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
40
30
20
10
0
0.001
o
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
0.01
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Vth Gate to Source Voltage Vs Temperature
0.1
1
t1, TIME (SEC)
10
100
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
0.01
D = 0.5
R q J A(t) = r(t) + R q J A
R q J A = 125 °C /W
0.2
0.1
0.0
P (pk
0.02
0.01
t1
t2
T J - T A = P * R q J A(t)
Duty C yc le , D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIM E (s e c )
Figure 11. Transient Thermal Response Curve
4
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AO6 41 5/ MC6 41 5
Package Information
TSOP-6: 6LEAD
5
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