UNISONIC TECHNOLOGIES CO., LTD Advance UPD02R1200L Power MOSFET -1.8A, 20V P-CHANNEL POWER MOSFE DESCRIPTION The UTC UPD02R1200L is a P-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and low gate charge, etc. The UTC UPD02R1200L is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) <120 mΩ @ VGS=-4.5V, ID=-1.8A RDS(ON) < 150 mΩ @ VGS=-2.5V, ID=-1.6A RDS(ON) < 200 mΩ @ VGS=-1.8V, ID=-1.0A * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UPD02R1200LG-AL3-R Pin Assignment: G: Gate D: Drain Package SOT-323 1 S Pin Assignment 2 3 G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R210-020.a UPD02R1200L Advance Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -20 V ±8 V TA=25°C -1.8 A ID Continuous Drain Current TA=70°C -1.5 A Pulsed Drain Current (Note 3) IDM -10 A TA=25°C 0.63 W Power Dissipation (Note 2) PD TA=70°C 0.4 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C. SYMBOL VDSS VGSS THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient (Note 1) t≤10s 160 200 °C/W θJA 180 220 °C/W Junction to Ambient (Note 1) Steady State Note: The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R210-020 .a UPD02R1200L Advance Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage SYMBOL Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current IGSS Static Drain-Source On-State Resistance BVDSS VGS(TH) ID(ON) RDS(ON) TEST CONDITIONS www.unisonic.com.tw TYP MAX UNIT ID=-250µA, VGS=0V VDS=-20V, VGS=0V VDS=-20V, VGS=0V, TJ=55°C VGS=±8V, VDS=0V -20 VDS=VGS, ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-1.8A VGS=-4.5V, ID=-1.8A, TJ=125°C VGS=-2.5V, ID=-1.6A, VGS=-1.8V, ID=-1.0A -0.4 -0.65 -10 65 90 80 100 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-10V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=-4.5V, VDS=-10V, ID=-1.8A Gate to Source Charge QGS IG=-100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=-4.5V, VDS=-10V, RL=5.55Ω, RG=3Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=-1A,VGS=0V Maximum Body-Diode Continuous IS Current Notes: 1. Pulse test; pulse width ≤ 300μs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD MIN -1 -5 ±100 -1 120 160 150 200 V µA µA nA V A mΩ mΩ mΩ mΩ 560 80 70 745 pF pF pF 8.5 1.2 2.1 7.2 36 53 56 11 nC nC nC ns ns ns ns -0.7 -1 V -1 A 3 of 6 QW-R210-020 .a UPD02R1200L Advance Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R210-020 .a UPD02R1200L Advance Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS -10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R210-020 .a UPD02R1200L Advance Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R210-020 .a