UNISONIC TECHNOLOGIES CO., LTD UTT100N75H Preliminary POWER MOSFET 100A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N75H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide excellent RDS(On) with low gate charge, etc. The UTC UTT100N75H is suitable for DC motor control, UPS and load switching, etc. FEATURES * RDS(ON) < 8.0 mΩ @ VGS=10V, ID=50A * High power and current handling capability * High speed switching * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT100N75HL-TA3-T UTT100N75HG-TA3-T UTT100N75HL-TN3-R UTT100N75HG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-107.b UTT100N75H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATING (TA =25°С, unless otherwise specified) PARAMETER SYMBOL VDSS VGSS RATINGS UNIT 75 V ±20 V TC=25°C 100 A Continuous ID Drain Current TC=100°C 48 A 400 A Pulsed (Note 2) IDM Peak diode recovery voltage dv/dt 3.86 V/ns Avalanche Energy (Note 3) EAS 162 mJ TO-220 83 W TC=25°C TO-252 140 W Power Dissipation PD TO-220 0.664 W/°C Derate above 25°C TO-252 0.95 W/°C Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=0.5mH, IAS=25.2A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤30A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C Drain-Source Voltage Gate-Source Voltage THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient steady state Junction to Case steady state SYMBOL TO-220 TO-252 TO-220 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 110 1.5 1.05 UNIT °C/W °C/W °C/W °C/W 2 of 6 QW-R205-107.b UTT100N75H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=75V, VGS=0V,TC=25°C VDS=75V, VGS=0V,TC=125°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=50A Forward Transconductance gFS VDD=5V, ID=30A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A Gate to Source Charge QGS ID=100µA Gate to Drain Charge QGD Turn-on Delay Time tD(ON) VDD=30V, VGS=10V, RL=60Ω, Rise Time tR RG=2.5Ω, ID=0.5A Turn-off Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Drain-Source Diode Forward IS Current Pulsed Drain-Source Diode Forward Current ISD Drain-Source Diode Forward Voltage VSD IS=100A, VGS=0V (Note 1) Body Diode Reverse Recovery Time tRR (Note 1) IS=30A, dIS/dt=100A/µs Body Diode Reverse Recovery Charge QRR (Note 1) Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 75 1 10 +100 -100 2.0 4.0 8.0 V µA µA nA nA 60 V mΩ S 414 270 132 pF pF pF 105 18 21 160 125 328 127 nC nC nC ns ns ns ns 100 A 400 A 1.2 V 47 ns 42 nC 3 of 6 QW-R205-107.b UTT100N75H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R205-107.b UTT100N75H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R205-107.b UTT100N75H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R205-107.b